Rohm BD2270HFV Mosfet controller ic for load switching Datasheet

Power Management Switch IC Series for PCs and Digital Consumer Product
MOSFET Controller IC
for Load Switching
No.09029EAT01
BD2270HFV
●Description
The BD2270HFV is an IC with a single built-in external N-channel MOSFET driver circuit. This IC has a built-in charge
pump circuit for gate drive and output discharge circuit, enabling configuration of a high side load switch for N-channel
MOSFET drive without using any external parts.
In addition, the control input terminal has a built-in comparator with hysteresis function, facilitating control of the power up
sequence. The space saving type of HVSOF5 package is used.
●Features
1) Built-in charge pump
2) Built-in discharge circuit for output charge
3) Soft start circuit
4) Built-in comparator with hysteresis function at control input terminal
5) Compact HVSOF5 package
6) Operating current 50μA
7) Standby current 5μA
8) Possible to drive N-channel power MOSFET
●Applications
PCs, PC peripheral devices, digital consumer electronics, etc.
●Absolute Maximum Ratings
Parameter
Symbol
Limits
Unit
Supply voltage
VCC
-0.3 ~ 6.0
V
AEN voltage
VAEN
-0.3 ~ 6.0
V
DISC voltage
VDISC
-0.3 ~ 6.0
V
GATE voltage
VGATE
-0.3 ~ 15.0
V
Storage temperature range
TSTG
-55 ~ 150
°C
Power dissipation
*1
Pd
669
mW
*1 When mounted on a 70 mm70 mm1.6 mm glass epoxy PCB, derated at 5.352 mW/C above Ta25C
*2 This IC is not designed to be radiation-proof.
●Operating Conditions
Parameter
Symbol
Limits
Unit
Operating voltage range
VCC
2.7 ~ 5.5
V
Operating temperature range
TOPR
-25 ~ 85
°C
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1/12
2009.04 - Rev.A
Technical Note
BD2270HFV
●Electrical Characteristics
(Vcc =3.0V, Ta=25°C unless otherwise specified)
Limits
Parameter
Symbol
Unit
Min.
Typ.
Max.
Condition
Operating current
ICC
-
50
75
μA
VAEN = 2.5V
Standby current
ISTB
-
5
10
μA
VAEN = 0V
VAENH
1.55
2
2.45
V
High level input
VAENL
1.35
1.9
2.35
V
Low level input
IAEN
-
3
5
μA
VAEN = 3V
10
13.5
15
V
VCC=5V
6.6
9.5
9.9
V
VCC=3.3V
6
8.5
9
V
VCC=3V
AEN input voltage
AEN input current
GATE output voltage
VGATE
GATE rise time
TON
-
130
750
μs
GATE fall time
TOFF
-
18
60
μs
DISC discharge resistance
RDISC
-
200
300
Ω
CGATE=500pF VCC=3V
VGATE > 4V
CGATE = 500pF VCC=3V
VGATE < 0.5V
VAEN=0V
●Measurement Circuit
VCC
GATE
AEN
C GATE
DISC
GND
ON/OFF
BD2270HFV
Fig.1 Measurement Circuit
●Timing Diagram
VAEN
VAENH
TON2
VAENL
TON1
TOFF
VCC+2V
VGATE
VCC+1V
0.5V
Fig.2 Timing Diagram
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2/12
2009.04 - Rev.A
Technical Note
BD2270HFV
●Reference Data
140
140
14
Ta=25°C
120
100
12
OPERATING CURRENT :
ISTB[μA]
OPERATING CURRENT :
IDD [μA]
100
80
60
40
20
10
80
60
40
20
0
3
4
5
SUPPLY VOLTAGE : VCC[V]
0
-50
6
0
8
6
4
2
0
Low to High
2.0
Low to High
2.0
High to Low
High to Low
1.5
1.5
1.0
1.0
0.5
0.5
0.0
0.0
2
3
4
5
SUPPLY VOLTAGE : VCC[V]
-50
6
Fig.7 AEN Input Voltage
Fig.6 Standby Current
AEN Disable
14
VCC=3.0V
8.0
6.0
4.0
2.0
8.0
6.0
4.0
2.0
0.0
0.0
Fig.9 AEN Input Current
4
2
0
50
100
AMBIENT TEMPERATURE : Ta[℃]
Fig.12 GATE Output Voltage
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2
3
4
5
SUPPLY VOLTAGE : VCC[V]
6
Fig.11 GATE Output Voltage
300
VCC=3.0V
250
200
150
100
50
0
0
4
2
DISC ON RESISTANCE : RDISC[Ω]
6
6
Ta=25°C
DISC ON RESISTANCE : RDISC[Ω]
8
8
0
50
100
AMBIENT TEMPERATURE : Ta[℃]
300
VCC=3.0V
10
10
Fig.10 AEN Input Current
14
12
Ta=25°C
12
0
-50
6
0
50
100
AMBIENT TEMPERATURE : Ta[℃]
Fig.8 AEN Input Voltage
10.0
Ta=25°C
AEN INPUT CURRENT : IAEN[μA]
AEN INPUT CURRENT : IAEN[μA]
VCC=3.0V
2.5
2.5
0
50
100
AMBIENT TEMPERATURE : Ta[℃]
10.0
6
3.0
ENABLE INPUT VOLTAGE :
VAEN[V]
ENABLE INPUT VOLTAGE :
VAEN[V] 0
OPERATING CURRENT :
ISTB [μA]
10
-50
3
4
5
SUPPLY VOLTAGE : VCC[V]
Fig.5 Standby Current
AEN Disable
Ta=25°C
12
GATE OUTPUT VOLTAGE : VGATE[V]
2
3.0
VCC=3.0V
3
4
5
SUPPLY VOLTAGE : VCC[V]
4
Fig.4 Operating Current
AEN Enable
14
2
6
0
50
100
AMBIENT TEMPERATURE : Ta[℃]
Fig.3 Operating Current
AEN Enable
-50
8
2
GATE OUTPUT VOLTAGE : VGATE [V]
OPERATING CURRENT :
IDD[μA]
120
2
Ta=25°C
VCC=3.0V
2
3
4
5
SUPPLY VOLTEGE : VCC[V]
6
Fig.13 DISC ON Resistance
3/12
250
200
150
100
50
0
-50
0
50
100
AMBIENT TEMPERATURE : Ta[℃]
Fig.14 DISC ON Resistance
2009.04 - Rev.A
Technical Note
BD2270HFV
200
200
350
120
80
40
TURN ON TIME2 : TON2[μs]
160
0
160
120
80
40
3
4
5
SUPPLY VOLTAGE : VCC[V]
6
-50
Fig.15 GATE Rise Time 1
250
200
150
100
50
2
0
50
100
AMBIENT TEMPERATURE : Ta[℃]
3
4
5
SUPPLY VOLTAGE : VCC[V]
Fig.16 GATE Rise Time 1
350
20
TURN OFF TIME : TOFF[μs]
250
200
150
100
50
VCC=3.0V, CGATE=500pF
TURN OFF TIME : TOFF[μs]
Ta=25°C, CGATE=500pF
300
16
12
8
4
2
-50
0
50
100
AMBIENT TEMPERATURE : Ta[℃]
3
4
5
SUPPLY VOLTAGE : VCC[V]
Fig.18 GATE Rise Time 2
12
8
4
-50
6
Fig.19 GATE Fall Time
100.0
16
0
0
0
6
Fig.17 GATE Rise Time 2
20
VCC=3.0V, CGATE=500pF
TURN ON TIME2 : TON2[μs]
300
0
0
2
0
50
100
AMBIENT TEMPERATURE : Ta[℃]
Fig.20 GATE Fall Time
100.0
VCC=3.0V
GATE DRIVE CURRENT : IG[μA]
VCC=5.0V
GATE DRIVE CURRENT : IG[μA]
Ta=25°C, CGATE=500pF
VCC=3.0V, CGATE=500pF
TURN ON TIME1 : TON1[μs]
TURN ON TIME1 : TON1[μs]
Ta=25°C, CGATE=500pF
10.0
1.0
0.1
10.0
1.0
0.1
0
2
4
6
8
GATE VOLTAGE ABOVE SUPPLY : VGATE[V]
Fig.21 GATE Drive Current
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0
2
4
6
GATE VOLTAGE ABOVE SUPPLY :
VGATE[V]
8
Fig.22 GATE Drive Current
4/12
2009.04 - Rev.A
Technical Note
BD2270HFV
●Waveform Data
VAEN
(5V/div)
VAEN
(5V/div)
VAEN
(5V/div)
VCC=3.0V
CGATE=500pF
VGATE
(2V/div)
VCC=3.0V
CGATE=500pF
VGATE
(2V/div)
VCC=3.0V
CGATE=500pF
VGATE
(2V/div)
TIME (1ms/div)
TIME (100μs/div)
TIME (5μs/div)
Fig.23 GATE Rise / Fall Characteristics
Fig.24 GATE Rise Characteristics
Fig.25 GATE Fall Characteristics
VAEN
(5V/div)
VAEN
(5V/div)
VAEN
(5V/div)
VCC=3.0V
RTF025N03
CL = 100μF
VGATE
VGATE
VOUT_SWITCH
(2V/div)
VCC=3.0V
RTF025N03
VCC=3.0V
RTF025N03
VGATE
VOUT_SWITCH
VOUT_SWITCH
(2V/div)
(2V/div)
TIME (100μs/div)
TIME (5μs/div)
TIME (20ms/div)
Fig.26 GATE Switch Rise
Characteristics
Fig.27 GATE Switch Fall
Characteristics
Fig.28 GATE Switch Fall
Characteristics
VAEN
(5V/div)
VAEN
(5V/div)
VCC=3.0V
RSS130N03
VCC=3.0V
RSS130N03
VGATE
VGATE
VOUT_SWITCH
VOUT_SWITCH
(2V/div)
(2V/div)
TIME (100μs/div)
TIME (10μs/div)
Fig.29 GATE Switch Rise
Characteristics
Fig.30 GATE Switch Fall
Characteristics
MOSFET : RTF025N03
RSS130N03
3.3V
V OUT_SWIT CH
V IN_SWIT CH
CL
1uF
VCC
ON/OFF
GATE
DISC
AEN
GND
BD2270HFV
Fig.31 Switch Rise / Fall Characteristics
Measurement Circuit Diagram
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5/12
2009.04 - Rev.A
Technical Note
BD2270HFV
●Block Diagram
GATE
VCC
OSC
Charge
Pump
(x3)
GND
DISC
Control
AEN
Fig.32 Block Diagram
VCC
1
GND
2
AEN
3
5
GATE
4
DISC
Fig.33 Pin Configuration
●Pin description
PIN No.
1
2
PIN name
VCC
GND
I/O
-
3
AEN
I
4
DISC
O
5
GATE
O
Function
Power input terminal
Ground terminal
Control input terminal
Turn ON the external MOSFET switch with high level input.
High level input  2.0V, Low level input  0.8V
Switch output discharge terminal
GATE drive output terminal
Used to connect the gate of the external N-channel MOSFET.
●I/O circuit
Pin name
Pin No.
AEN
3
DISC
4
GATE
5
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Equivalent circuit
6/12
2009.04 - Rev.A
Technical Note
BD2270HFV
●Functional Description
The BD2270HVF is a driver IC to use an N-channel MOSFET as a high side load switch. This IC incorporates the following
functions.
1. GATE drive
A voltage to drive the gate of N-channel MOSFET is generated by a built-in charge pump in the BD2270HFV. The built-in
charge pump in the BD2270HFV generates a voltage three times as high as the power supply voltage at the GATE
terminal. In addition, since this IC has a built-in capacitor for the charge pump, it needs no external parts.
The charge pump operates when the AEN is set to High. When the AEN is set to Low, the GATE terminal voltage is fixed
to the GND level.
2.
Output discharge circuit
The output discharge circuit is enabled when the AEN is set to Low. When the discharge circuit is activated, the
200Ω(Typ.) MOSFET switch located between the DISC terminal and the GND terminal turns ON. Connecting between the
DISC terminal and the source side (load side) of the N-channel MOSFET makes it possible to immediately discharge
capacitive load.
3.
Soft start function
When the AEN terminal input voltage reaches the High level, the built-in charge pump in the BD2270HFV charges the
gate of the N-channel MOSFET. The turn-on time of the N-channel MOSFET is determined by the GATE capacity. In
addition, connecting a capacitor to the GATE terminal makes it possible to slow the rise of turn-on time of the N-channel
MOSFET, thus achieving reduction of the inrush current to a large capacitive load.
4. Analog control input terminal
The AEN input of the BD2270HFV is connected to the built-in hysteresis comparator. Consequently, even analog signals
can control the BD2270HFV, thus facilitating the control of the switch ON-OFF sequence.
VCC
VIN_SWITCH
VAEN
VGATE
VOUT_SWITCH
放電回路
Discharge circuit
ON
OFF
ON
Fig. 34 Operation Timing
* To turn ON the power supply (VCC, VIN_SWITCH), set the AEN to Low.
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7/12
2009.04 - Rev.A
Technical Note
BD2270HFV
●Application Circuit
1. Configuration of 3.3V load switch
V IN_SWITCH
3.3V
ON/OFF
V OUT_SWITCH
VCC
GATE DISC
AEN
GND
3.3V
Load
BD2270HFV
Fig.35 Configuration of 3.3V Load Switch
2. Configuration of 5V load switch
5V
5V
Load
ON/OFF
VCC
GATE DISC
AEN
GND
BD2270HFV
Fig.36 Configuration of 5V Load Switch
A 5V load switch can be configured like the 3.3V load switch. However, if the external N-channel MOSFET is low VGSS, clamp it
with Zener diode and the like.
3. Configuration of low-voltage load switch
1.2V
1.2V
Load
3.3V
ON/OFF
VCC
GATE DISC
AEN
GND
BD2270HFV
Fig.37 Configuration of Low-voltage Load Switch
Providing BD2270HFV drive power supply enables configuration of a low-voltage load switch.
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8/12
2009.04 - Rev.A
Technical Note
BD2270HFV
4. Soft start configuration
3.3V
ON/OFF
3.3V
Load
VCC
GATE DISC
AEN
GND
BD2270HFV
Fig.38 Soft Start Configuration
Connecting an external capacitor to the GATE terminal of the BD2270HFV makes it possible to slow the rise of the N-channel
MOSFET, thus achieving reduction of the inrush current to the large-capacity capacitor mounted on the load side.
● Application Information
This system connection diagram gives no warranty to the operation as application.
To change the external circuit constant or else and use this IC, determine the application allowing for an adequate margin
with consideration given to variations in external parts and ICs including not only static characteristics but also transient
characteristics.
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9/12
2009.04 - Rev.A
Technical Note
BD2270HFV
●Thermal Derating Characteristics
(HVSOF5)
800
POWER DISSIPATION : Pd (mW)
700
600
500
400
300
200
100
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE : Ta (℃)
Fig. 39 Power dissipation curve (Pd-Ta Curve)
Mounted on a 70 mm70 mm1.6 mm glass epoxy PCB
Cautions on use
(1) Absolute Maximum Ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can
break down devices, thus making impossible to identify breaking mode such as a short circuit or an open circuit. If any
special mode exceeding the absolute maximum ratings is assumed, consideration should be given to take physical safety
measures including the use of fuses, etc.
(2)
Operating conditions
These conditions represent a range within which characteristics can be provided approximately as expected. The electrical
characteristics are guaranteed under the conditions of each parameter.
(3)
Reverse connection of power supply connector
The reverse connection of power supply connector can break down ICs. Take protective measures against the breakdown
due to the reverse connection, such as mounting an external diode between the power supply and the IC’s power supply
terminal.
(4)
Power supply line
Design PCB pattern to provide low impedance for the wiring between the power supply and the GND lines. In this regard,
for the digital block power supply and the analog block power supply, even though these power supplies has the same level
of potential, separate the power supply pattern for the digital block from that for the analog block, thus suppressing the
diffraction of digital noises to the analog block power supply resulting from impedance common to the wiring patterns. For
the GND line, give consideration to design the patterns in a similar manner.
Furthermore, for all power supply terminals to ICs, mount a capacitor between the power supply and the GND terminal. At
the same time, in order to use an electrolytic capacitor, thoroughly check to be sure the characteristics of the capacitor to be
used present no problem including the occurrence of capacity dropout at a low temperature, thus determining the constant.
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10/12
2009.04 - Rev.A
Technical Note
BD2270HFV
(5)
GND voltage
Make setting of the potential of the GND terminal so that it will be maintained at the minimum in any operating state.
Furthermore, check to be sure no terminals are at a potential lower than the GND voltage including an actual electric
transient.
(6) Short circuit between terminals and erroneous mounting
In order to mount ICs on a set PCB, pay thorough attention to the direction and offset of the ICs. Erroneous mounting can
break down the ICs. Furthermore, if a short circuit occurs due to foreign matters entering between terminals or between
the terminal and the power supply or the GND terminal, the ICs can break down.
(7)
Operation in strong electromagnetic field
Be noted that using ICs in the strong electromagnetic field can malfunction them.
(8)
Inspection with set PCB
On the inspection with the set PCB, if a capacitor is connected to a low-impedance IC terminal, the IC can suffer stress.
Therefore, be sure to discharge from the set PCB by each process. Furthermore, in order to mount or dismount the set
PCB to/from the jig for the inspection process, be sure to turn OFF the power supply and then mount the set PCB to the jig.
After the completion of the inspection, be sure to turn OFF the power supply and then dismount it from the jig. In addition,
for protection against static electricity, establish a ground for the assembly process and pay thorough attention to the
transportation and the storage of the set PCB.
(9)
Input terminals
In terms of the construction of IC, parasitic elements are inevitably formed in relation to potential. The operation of the
parasitic element can cause interference with circuit operation, thus resulting in a malfunction and then breakdown of the
input terminal. Therefore, pay thorough attention not to handle the input terminals, such as to apply to the input terminals a
voltage lower than the GND respectively, so that any parasitic element will operate. Furthermore, do not apply a voltage to
the input terminals when no power supply voltage is applied to the IC. In addition, even if the power supply voltage is
applied, apply to the input terminals a voltage lower than the power supply voltage or within the guaranteed value of
electrical characteristics.
(10) Ground wiring pattern
If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND
pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that
resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of the
small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well.
(11) External capacitor
In order to use a ceramic capacitor as the external capacitor, determine the constant with consideration given to a
degradation in the nominal capacitance due to DC bias and changes in the capacitance due to temperature, etc.
(12) Thermal design Perform thermal design in which there are adequate margins by taking into account the power
dissipation (Pd) in actual states of use.
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11/12
2009.04 - Rev.A
Technical Note
BD2270HFV
Order type name selection
B D
2 2 7 0
ROHM type name
Part number
2270
H F V
-
T R
Package type name
HFV: HVSOF
taping type name
TR: embossed reel tape
HVSOF5
<Dimension>
<Tape and Reel information>
Tape
0.6Max.
1.2±0.05
(0.91)
(MAX 1.28 include BURR)
1 2 3
4
(0.41)
5 4
1.6±0.05
1.0±0.05
0.8
0.3
5
3 2 1
0.2Max.
(0.05)
1.6±0.05
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
TR
(The direction is the 1pin of product is at the upper light when you hold
reel on the left hand and you pull out the tape on the right hand)
0.13±0.05
X X X
X X X
X X X
X X X
X X X
X X X
X X X
X X X
X X X
X X X
0.22±0.05
0.5
1Pin
Direction of feed
Reel
(Unit:mm)
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※When you order , please order in times the amount of package quantity.
12/12
2009.04 - Rev.A
Notice
Notes
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consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
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shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
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The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
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instrument, transportation equipment, aerospace machinery, nuclear-reactor controller,
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