May 1996 NDP6051 / NDB6051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 48 A, 50 V. RDS(ON) = 0.022 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ______________________________________________________________________________ D G S Absolute Maximum Ratings T C = 25°C unless otherwise noted Symbol Parameter NDP6051 VDSS Drain-Source Voltage 50 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) 50 V VGSS Gate-Source Voltage - Continuous ± 20 V - Nonrepetitive (tP < 50 µs) ID Drain Current NDB6051 ± 40 - Continuous 48 - Pulsed 144 PD Total Power Dissipation @ TC = 25°C TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Derate above 25°C © 1997 Fairchild Semiconductor Corporation Units A 100 W 0.67 W/°C -65 to 175 °C 275 °C NDP6051 Rev. C1 Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units 300 mJ 48 A 250 µA DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS Single Pulse Drain-Source Avalanche Energy IAR Maximum Drain-Source Avalanche Current VDD = 25 V, ID = 48 A OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 50 V, VGS = 0 V 50 V 1 mA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA V TJ = 125°C ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA TJ = 125°C RDS(ON) Static Drain-Source On-Resistance 2 2.8 4 1.4 2.2 3.6 0.018 0.022 0.03 0.04 VGS = 10 V, ID = 24 A TJ = 125°C ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 10 V, ID = 24 A 60 Ω A 14 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz 1220 pF 520 pF 190 pF SWITCHING CHARACTERISTICS (Note 1) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) VDD = 30 V, ID = 48 A, VGS = 10 V, RGEN = 7.5 Ω 10 20 nS 132 250 nS Turn - Off Delay Time 28 55 nS tf Turn - Off Fall Time 80 150 nS Qg Total Gate Charge 37 53 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 24 V, ID = 48 A, VGS = 10V 8 22 NDP6051 Rev. C1 Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS IS Maximum Continuos Drain-Source Diode Forward Current 48 A ISM Maximum Pulsed Drain-Source Diode Forward Current 144 A VSD Drain-Source Diode Forward Voltage 0.9 1.3 V 0.8 1.2 VGS = 0 V, IS = 24 A (Note 1) TJ = 125°C trr Reverse Recovery Time Irr Reverse Recovery Current VGS = 0 V, IF = 48 A, dIF/dt = 100 A/µs 35 140 ns 2 8 A THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case 1.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP6051 Rev. C1 Typical Electrical Characteristics VGS = 12V 2.5 10 9.0 80 60 R DS(on) , NORMALIZED 8.0 7.0 40 6.0 20 I D 5.0 0 0 1 V DS 2 3 4 , DRAIN-SOURCE VOLTAGE (V) DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE CURRENT (A) 100 2 7.0 1.5 8.0 10 D 40 60 , DRAIN CURRENT (A) 80 100 2.5 I D = 24A R DS(on) , NORMALIZED V GS = 10V 1.5 1.25 1 0.75 -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (°C) 150 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 2 TJ = 125°C 1.75 1.5 1.25 25°C 1 -55°C 0.75 0.5 175 VGS = 10V 2.25 0 20 40 60 ID , DRAIN CURRENT (A) J 80 100 Figure 4. On-Resistance Variation with Drain Current and Temperature. Figure 3. On-Resistance Variation with Temperature. 1.2 T = -55°C J V DS = 10V 50 25°C V GS(th), NORMALIZED 125°C 40 30 20 10 0 2 4 6 8 V GS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 10 GATE-SOURCE THRESHOLD VOLTAGE 60 I D , DRAIN CURRENT (A) 12 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2 0.5 -50 0 I Figure 1. On-Region Characteristics. 1.75 9.0 1 0.5 5 VGS = 6.0V V DS = V GS I D = 250µA 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (°C) 150 175 J Figure 6. Gate Threshold Variation With Temperature. NDP6051 Rev. C1 Typical Electrical Characteristics (continued) 50 20 I D = 250µA I , REVERSE DRAIN CURRENT (A) 1.1 1.05 1 0.95 V GS = 0V 5 2 1 TJ = 125°C 25°C 0.1 -55°C 0.01 0.001 S BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.15 0.9 -50 -25 0 T J 25 50 75 100 125 , JUNCTION TEMPERATURE (°C) 150 175 0.0001 0.2 0.4 0.6 0.8 1 1.2 V , BODY DIODE FORWARD VOLTAGE (V) 1.4 SD Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 20 CAPACITANCE (pF) 2000 V GS, GATE-SOURCE VOLTAGE (V) 3000 Ciss VDS = 12V 24V 48V I D = 48A 15 1000 Coss 10 500 Crss 300 f = 1 MHz V GS = 0V 200 100 1 2 V DS 3 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 5 0 50 0 20 40 Q g , GATE CHARGE (nC) 60 80 Figure 10. Gate Charge Characteristics. Figure 9. Capacitance Characteristics. VDD t on RL V IN t d(on) VGS R GEN DUT G tr V OUT D t off t d(off) tf 90% 90% VOUT 10% 10% INVERTED 90% S V IN 50% 50% 10% PULSE WIDTH Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDP6051 Rev. C1 Typical Electrical Characteristics (continued) 300 gFS, TRANSCONDUCTANCE (SIEMENS) 30 TJ = -55°C V DS=10V 100 I D , DRAIN CURRENT (A) 24 25°C 18 125°C 12 6 R (O DS N) Lim it 100 50 µs 1ms 20 10m 10 100 VGS = 10V SINGLE PULSE o RθJC = 1.5 C/W T C = 25°C 5 2 DC s ms 1 0 0.5 0 10 20 I D, DRAIN CURRENT (A) 30 40 Figure 13. Transconductance Variation with Drain Current and Temperature. 1 2 3 5 10 20 30 VDS , DRAIN-SOURCE VOLTAGE (V)) 50 70 Figure 14. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.5 0.3 R θJC (t) = r(t) * RθJC R θJC = 1.5 °C/W 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 0.03 t1 0.02 0.01 0.02 0.01 0.01 0.02 0.05 t2 TJ - T C = P * R θ JC (t) Duty Cycle, D = t 1 /t2 Single Pulse 0.1 0.2 0.5 1 2 5 t1 ,TIME (m s) 10 20 50 100 200 500 1000 Figure 15. Transient Thermal Response Curve. NDP6051 Rev. C1