30V、11.6A N-Channel MOSFET EC733612 Description The EC733612 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Features and Benefits: ◆ VDS = 30V,ID =11.6A RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=10V ◆ High Power and current handing capability ◆ Lead free product is acquired ◆ Surface Mount Package Application ◆ PWM applications ◆ Load switch ◆ Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ID(25℃) 11.6 A ID(70℃) 9 A IDM 50 A PD 3.1 W TJ,TSTG -55 To 150 ℃ Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 6 4J01N-Rev.F002 EC733612 30V、11.6A N-Channel MOSFET Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=10m A 2 3 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=10A 13 17 mΩ VGS=10V, ID=11.6A 9 12 mΩ VDS=5V,ID=11.6A 18 S 1302 PF 211 PF Crss 159 PF Turn-on Delay Time td(on) 6.52 nS Turn-on Rise Time tr VDS=15V,VGS=10V,RGEN=3Ω 4.16 nS td(off) ID=1A 20.08 nS OFF CHARACTERISTICS V ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 1.5 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss Output Capacitance VDS=15V,VGS=0V, Coss Reverse Transfer Capacitance F=1.0MHz SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf 5.68 nS Total Gate Charge Qg 24.88 nC Gate-Source Charge Qgs 4.19 nC Gate-Drain Charge Qgd 4.95 nC Body Diode Reverse Recovery Time Trr 9.41 nS 3.2 nC Body Diode Reverse Recovery Charge VDS=15V,ID=11.6A,VGS=10V Qrr IF=11.6A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1A 0.75 1.2 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2 2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. E-CMOS Corp. (www.ecmos.com.tw) Page 2 of 6 4J01N-Rev.F002 V 30V、11.6A N-Channel MOSFET EC733612 Typical electrical and thermal characteristics E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 6 4J01N-Rev.F002 30V、11.6A N-Channel MOSFET EC733612 Typical electrical and thermal characteristics E-CMOS Corp. (www.ecmos.com.tw) Page 4 of 6 4J01N-Rev.F002 EC733612 30V、11.6A N-Channel MOSFET Ordering and Marking Information EC733612 XX X R：Tape & Reel M1＝SOP 8L E-CMOS Corp. (www.ecmos.com.tw) Part Number Package Marking EC733612M1R SOP 8L SSF3612 Page 5 of 6 4J01N-Rev.F002 30V、11.6A N-Channel MOSFET EC733612 SOP 8L Package Outline Dimension E-CMOS Corp. (www.ecmos.com.tw) Page 6 of 6 4J01N-Rev.F002