MBR2H100SFT3G, NRVB2H100SFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123FL Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 100 VOLTS Features • • • • • • • • Guardring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 Package Designed for Optimal Automated Board Assembly ESD Ratings: Machine Model, C Human Body Model, 3B NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices Mechanical Characteristics • • • • • • • • Reel Options: MBR2H100SFT3G = 10,000 per 13 in reel/8 mm tape Device Marking: L2H Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements SOD−123FL CASE 498 PLASTIC MARKING DIAGRAM L2HMG G L2H = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBR2H100SFT3G SOD−123 (Pb−Free) 10000 / Tape & Reel NRVB2H100SFT3G SOD−123 (Pb−Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 April, 2012 − Rev. 1 1 Publication Order Number: MBR2H100SF/D MBR2H100SFT3G, NRVB2H100SFT3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 146°C) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) Symbol Value Unit VRRM VRWM VR 100 V IO 2.0 A IFSM 50 A Tstg, TJ −65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL 23 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 85 °C/W Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 330 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, TJ = 25°C) (IF = 2.0 A, TJ = 25°C) (IF = 1.0 A, TJ = 125°C) (IF = 2.0 A, TJ = 125°C) VF Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR 2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 0.76 0.84 0.61 0.68 40 0.5 V mA mA MBR2H100SFT3G, NRVB2H100SFT3G TYPICAL CHARACTERISTICS 100 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 150°C 125°C 25°C 10 1 0.1 0 0.2 0.4 0.6 1.0 0.8 1.2 150°C 125°C 25°C 10 1 0.1 1.4 0.8 1.0 1.2 1.4 Figure 2. Maximum Forward Voltage 1.6 IR, REVERSE CURRENT (mA) 10 150°C 125°C 0.01 0.001 0.0001 10 20 30 40 50 60 0.1 125°C 0.01 25°C 0.001 0.0001 25°C 0 150°C 1 70 80 90 0.00001 0 100 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 4.0 RqJL = 23°C/W dc 3.0 Square Wave 2.0 1.5 1.0 0.5 0 120 125 130 135 140 145 150 155 160 165 170 175 PFO, AVERAGE POWER DISSIPATION (W) IR, REVERSE CURRENT (mA) IF(AV), AVERAGE FORWARD CURRENT (A) 0.6 Figure 1. Typical Forward Voltage 0.1 2.5 0.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1 3.5 0.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 10 0.00001 0 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 TJ = 175°C Square Wave dc 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 MBR2H100SFT3G, NRVB2H100SFT3G TYPICAL CHARACTERISTICS 140 TJ = 25°C C, CAPACITANCE (pF) 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (V) Figure 7. Capacitance 1000 R(t) (C/W) 100 10 50% (DUTY CYCLE) 25% 10% 5.0% 2.0% 1.0% 1.0 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 PULSE TIME (s) Figure 8. Thermal Response, Junction−to−Ambient (20 mm2 pad) 100 50% (DUTY CYCLE) 25% R(t) (C/W) 10 10% 5.0% 2.0% 1.0 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 PULSE TIME (s) Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad) http://onsemi.com 4 MBR2H100SFT3G, NRVB2H100SFT3G PACKAGE DIMENSIONS SOD−123FL CASE 498−01 ISSUE B E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. q D DIM A A1 b c D E L HE q A1 POLARITY INDICATOR OPTIONAL AS NEEDED A L b MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° MILLIMETERS NOM MAX 0.95 1.00 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° SOLDERING FOOTPRINT* HE q c ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 1.22 0.048 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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