ON NRVB2H100SFT3G Surface mount schottky power rectifier Datasheet

MBR2H100SFT3G,
NRVB2H100SFT3G
Surface Mount
Schottky Power Rectifier
Plastic SOD−123FL Package
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This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. Because of its small size, it is ideal for use in
portable and battery powered products such as cellular and cordless
phones, chargers, notebook computers, printers, PDAs and PCMCIA
cards. Typical applications are AC−DC and DC−DC converters,
reverse battery protection, and “Oring” of multiple supply voltages
and any other application where performance and size are critical.
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES
100 VOLTS
Features
•
•
•
•
•
•
•
•
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0
Package Designed for Optimal Automated Board Assembly
ESD Ratings: Machine Model, C
Human Body Model, 3B
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
Mechanical Characteristics
•
•
•
•
•
•
•
•
Reel Options: MBR2H100SFT3G = 10,000 per 13 in reel/8 mm tape
Device Marking: L2H
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
SOD−123FL
CASE 498
PLASTIC
MARKING DIAGRAM
L2HMG
G
L2H
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MBR2H100SFT3G
SOD−123
(Pb−Free)
10000 / Tape &
Reel
NRVB2H100SFT3G
SOD−123
(Pb−Free)
10000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
April, 2012 − Rev. 1
1
Publication Order Number:
MBR2H100SF/D
MBR2H100SFT3G, NRVB2H100SFT3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 146°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage and Operating Junction Temperature Range (Note 1)
Symbol
Value
Unit
VRRM
VRWM
VR
100
V
IO
2.0
A
IFSM
50
A
Tstg, TJ
−65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
YJCL
23
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
85
°C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
RqJA
330
°C/W
Symbol
Value
Unit
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 1.0 A, TJ = 25°C)
(IF = 2.0 A, TJ = 25°C)
(IF = 1.0 A, TJ = 125°C)
(IF = 2.0 A, TJ = 125°C)
VF
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
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2
0.76
0.84
0.61
0.68
40
0.5
V
mA
mA
MBR2H100SFT3G, NRVB2H100SFT3G
TYPICAL CHARACTERISTICS
100
IF, FORWARD CURRENT (A)
IF, FORWARD CURRENT (A)
100
150°C 125°C 25°C
10
1
0.1
0
0.2
0.4
0.6
1.0
0.8
1.2
150°C 125°C 25°C
10
1
0.1
1.4
0.8
1.0
1.2
1.4
Figure 2. Maximum Forward Voltage
1.6
IR, REVERSE CURRENT (mA)
10
150°C
125°C
0.01
0.001
0.0001
10
20
30
40
50
60
0.1
125°C
0.01
25°C
0.001
0.0001
25°C
0
150°C
1
70
80
90
0.00001
0
100
10
20
30
40
50
60
70
80
90 100
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
4.0
RqJL = 23°C/W
dc
3.0
Square Wave
2.0
1.5
1.0
0.5
0
120 125 130 135 140 145 150 155 160 165 170 175
PFO, AVERAGE POWER DISSIPATION (W)
IR, REVERSE CURRENT (mA)
IF(AV), AVERAGE FORWARD CURRENT (A)
0.6
Figure 1. Typical Forward Voltage
0.1
2.5
0.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1
3.5
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
10
0.00001
0
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
TJ = 175°C
Square Wave
dc
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
MBR2H100SFT3G, NRVB2H100SFT3G
TYPICAL CHARACTERISTICS
140
TJ = 25°C
C, CAPACITANCE (pF)
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
90
100
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance
1000
R(t) (C/W)
100
10
50% (DUTY CYCLE)
25%
10%
5.0%
2.0%
1.0%
1.0
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
10
100
1000
PULSE TIME (s)
Figure 8. Thermal Response, Junction−to−Ambient (20 mm2 pad)
100
50% (DUTY CYCLE)
25%
R(t) (C/W)
10
10%
5.0%
2.0%
1.0
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
PULSE TIME (s)
Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad)
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4
MBR2H100SFT3G, NRVB2H100SFT3G
PACKAGE DIMENSIONS
SOD−123FL
CASE 498−01
ISSUE B
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT
SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM
FROM THE LEAD TIP.
q
D
DIM
A
A1
b
c
D
E
L
HE
q
A1
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
L
b
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0°
MILLIMETERS
NOM
MAX
0.95
1.00
0.05
0.10
0.90
1.10
0.15
0.20
1.65
1.80
2.70
2.90
0.75
0.95
3.60
3.80
8°
−
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0°
INCHES
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8°
SOLDERING FOOTPRINT*
HE
q
c
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
1.22
0.048
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MBR2H100SF/D
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