NCE Power NCE75H21T Nce n-channel enhancement mode power mosfet Datasheet

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NCE75H21T
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NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE75H21T uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in Automotive applications and a wide variety of other
applications.
GENERAL FEATURES
● VDSS =75V,ID =210A
Schematic diagram
RDS(ON) < 4mΩ @ VGS=10V
● Good stability and uniformity with high EAS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Excellent package for good heat dissipation
Application
●
Automotive applications
●
Hard Switched and High Frequency Circuits
●
Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-247
top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE75H21T
NCE75H21T
TO-247
-
-
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Limit
Unit
75
V
±20
V
ID
210
A
ID (100℃)
150
A
Pulsed Drain Current
IDM
850
A
Maximum Power Dissipation
PD
480
W
3.2
W/℃
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Derating factor
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Single pulse avalanche energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
Operating Junction and Storage Temperature Range
EAS
2200
mJ
dv/dt
5
V/ns
TJ,TSTG
-55 To 175
℃
RθJC
0.31
℃/W
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 1)
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
75
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=75V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±200
nA
VGS(th)
VDS=VGS,ID=250μA
2
3
4
V
RDS(ON)
VGS=10V, ID=40A
-
2.9
4
mΩ
-
4.7
6.5
mΩ
gFS
VDS=25V,ID=40A
100
165
-
S
-
12100
-
PF
-
2000
-
PF
-
480
-
PF
-
20
-
nS
-
190
-
nS
-
130
-
nS
-
120
-
nS
-
410
620
nC
-
90
140
nC
-
140
210
nC
On Characteristics
Gate Threshold Voltage
Drain-Source On-State Resistance
25℃
125℃
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=25V,VGS=0V,
F=1.0MHz
Switching Characteristics
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-Off Delay Time
VDD=38V,ID=40A
VGS=10V,RGEN=1.2Ω
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
(Note2)
VDS=60V,ID=40A,
VGS=10V(Note2)
Drain-Source Diode Characteristics
Diode Forward Voltage
VSD
VGS=0V,IS=40A
-
-
1.2
V
trr
TJ = 25°C, IF = 40A
-
120
210
nS
Reverse Recovery Charge
Qrr
di/dt = 100A/μs(Note2)
-
860
1300
nC
Forward Turn-On Time
ton
Reverse Recovery Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Surface Mounted on FR4 Board, t ≤ 10 sec.
2. Pulse Test: Pulse Width ≤ 400μs, Duty Cycle ≤ 2%.
3. EAS condition:Tj=25℃,VDD=37.5V,VG=10V,L=2mH,Rg=25Ω,IAS=37A
4. ISD≤125A, di/dt≤260A/μs, VDD≤V(BR)DSS,TJ ≤175°C
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NCE75H21T
Test circuit
1)EAS test Circuits
2)Gate charge test Circuit:
3)Switch Time Test Circuit:
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ID- Drain Current (A)
Normalized On-Resistance
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-JunctionTemperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Rdson On-Resistance(Ω)
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
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Figure 6 Source- Drain Diode Forward
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Normalized BVdss
C Capacitance (pF)
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TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 9
BVDSS vs Junction Temperature
Vth , ( V )
ID- Drain Current (A)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Safe Operation Area
Figure 10
VGS(th) vs Junction Temperatur
r(t),Normalized Effective
Transient Thermal Impedance
Figure 8
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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TO-247 PACKAGE INFORMATION
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
4.850
5.150
0.191
0.200
A1
2.200
2.600
0.087
0.102
b
1.000
1.400
0.039
0.055
b1
2.800
3.200
0.110
0.126
b2
1.800
2.200
0.071
0.087
c
0.500
0.700
0.020
0.028
c1
1.900
2.100
0.075
0.083
D
15.450
15.750
0.608
0.620
E1
3.500REF
0.138REF
E2
3.600REF
0.142REF
L
40.900
41.300
1.610
1.626
L1
24.800
25.100
0.976
0.988
L2
20.300
20.600
0.799
0.811
Φ
7.100
7.300
0.280
0.287
e
5.450TYP
0.215TYP
H
5.980TYP
0.235 REF
h
0.000
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0.300
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0.000
0.012
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NCE75H21T
ATTENTION:
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Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
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that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
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and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
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NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
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