Pb Free Product NCE75H21T http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. GENERAL FEATURES ● VDSS =75V,ID =210A Schematic diagram RDS(ON) < 4mΩ @ VGS=10V ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Excellent package for good heat dissipation Application ● Automotive applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-247 top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE75H21T NCE75H21T TO-247 - - - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGS Limit Unit 75 V ±20 V ID 210 A ID (100℃) 150 A Pulsed Drain Current IDM 850 A Maximum Power Dissipation PD 480 W 3.2 W/℃ Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.1 Pb Free Product NCE75H21T http://www.ncepower.com Single pulse avalanche energy (Note 3) Peak Diode Recovery dv/dt (Note 4) Operating Junction and Storage Temperature Range EAS 2200 mJ dv/dt 5 V/ns TJ,TSTG -55 To 175 ℃ RθJC 0.31 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 1) Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 75 - - V Zero Gate Voltage Drain Current IDSS VDS=75V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±200 nA VGS(th) VDS=VGS,ID=250μA 2 3 4 V RDS(ON) VGS=10V, ID=40A - 2.9 4 mΩ - 4.7 6.5 mΩ gFS VDS=25V,ID=40A 100 165 - S - 12100 - PF - 2000 - PF - 480 - PF - 20 - nS - 190 - nS - 130 - nS - 120 - nS - 410 620 nC - 90 140 nC - 140 210 nC On Characteristics Gate Threshold Voltage Drain-Source On-State Resistance 25℃ 125℃ Forward Transconductance Dynamic Characteristics Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, F=1.0MHz Switching Characteristics Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-Off Delay Time VDD=38V,ID=40A VGS=10V,RGEN=1.2Ω td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd (Note2) VDS=60V,ID=40A, VGS=10V(Note2) Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V,IS=40A - - 1.2 V trr TJ = 25°C, IF = 40A - 120 210 nS Reverse Recovery Charge Qrr di/dt = 100A/μs(Note2) - 860 1300 nC Forward Turn-On Time ton Reverse Recovery Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Surface Mounted on FR4 Board, t ≤ 10 sec. 2. Pulse Test: Pulse Width ≤ 400μs, Duty Cycle ≤ 2%. 3. EAS condition：Tj=25℃,VDD=37.5V,VG=10V,L=2mH,Rg=25Ω,IAS=37A 4. ISD≤125A, di/dt≤260A/μs, VDD≤V(BR)DSS，TJ ≤175°C Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.1 Pb Free Product http://www.ncepower.com NCE75H21T Test circuit 1）EAS test Circuits 2）Gate charge test Circuit: 3）Switch Time Test Circuit： Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.1 Pb Free Product NCE75H21T http://www.ncepower.com ID- Drain Current (A) Normalized On-Resistance TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Rdson On-Resistance(Ω) Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Wuxi NCE Power Semiconductor Co., Ltd Figure 6 Source- Drain Diode Forward Page 4 v1.1 Pb Free Product NCE75H21T Normalized BVdss C Capacitance (pF) http://www.ncepower.com TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 9 BVDSS vs Junction Temperature Vth , ( V ) ID- Drain Current (A) Figure 7 Capacitance vs Vds TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Safe Operation Area Figure 10 VGS(th) vs Junction Temperatur r(t),Normalized Effective Transient Thermal Impedance Figure 8 Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.1 Pb Free Product NCE75H21T http://www.ncepower.com TO-247 PACKAGE INFORMATION Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 4.850 5.150 0.191 0.200 A1 2.200 2.600 0.087 0.102 b 1.000 1.400 0.039 0.055 b1 2.800 3.200 0.110 0.126 b2 1.800 2.200 0.071 0.087 c 0.500 0.700 0.020 0.028 c1 1.900 2.100 0.075 0.083 D 15.450 15.750 0.608 0.620 E1 3.500REF 0.138REF E2 3.600REF 0.142REF L 40.900 41.300 1.610 1.626 L1 24.800 25.100 0.976 0.988 L2 20.300 20.600 0.799 0.811 Φ 7.100 7.300 0.280 0.287 e 5.450TYP 0.215TYP H 5.980TYP 0.235 REF h 0.000 Wuxi NCE Power Semiconductor Co., Ltd 0.300 Page 6 0.000 0.012 v1.1 Pb Free Product http://www.ncepower.com NCE75H21T ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications. NCE power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein. Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use. This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice. Wuxi NCE Power Semiconductor Co., Ltd Page 7 v1.1