LED - Chip ELС-910-11 Preliminary 10.04.2007 rev. 01/06 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs P (anode) up typ. dimensions (µm) 1000 typ. thickness 150 (±25) µm 1000 cathode gold alloy, 0.5 µm anode gold alloy, 1.5 µm PoC-05 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit Forward voltage IF = 20 mA VF 1.15 V Forward voltage2 IF = 350 mA VF 1.35 V Reverse voltage IR = 10 µA VR Radiant power1 IF = 20 mA Φe 1.5 mW Radiant power2 IF = 350 mA Φe 22.5 mW Radiant intensity1 IF = 20 mA Ιe 0.45 mW/sr Radiant intensity2 IF = 350 mA Ιe 7.3 mW/sr Peak wavelength IF = 20 mA λP Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 60 nm Switching time IF = 20 mA tr, tf 20 ns 5 900 V 910 920 nm 1 Measured on bare chip on TO-18 header 2 Measured on bare chip glued on a Ø 8 x 1mm Cu header (10 s after switched on) (for information only) Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELС-910-11 Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out on EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1