UNISONIC TECHNOLOGIES CO., DTA124E PNP EPITAXIAL SILICON TRANSISTOR PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS) FEATURES *Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). *The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. *Only the on / off conditions need to be set for operation, making device design easy. EQUIVALENT CIRCUIT OUT R1 IN R2 GND(+) IN OUT GND(+) ORDERING INFORMATION Ordering Number Lead Free Halogen Free DTA124EL-AE3-R DTA124EG-AE3-R DTA124EL-AL3-R DTA124EG-AL3-R DTA124EL-AN3-R DTA124EG-AN3-R Note: Pin Assignment: G: GND I: IN O: OUT Package SOT-23 SOT-323 SOT-523 Pin Assignment 1 2 3 G I O G I O G I O Packing Tape Reel Tape Reel Tape Reel MARKING www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., 1 of 3 QW-R206-044,D DTA124E PNP EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (TA = 25℃, unless otherwise specified.) PARAMETER Supply Voltage Input Voltage RATINGS UNIT 50 V -40 ~ +10 V -100 Output Current mA -30 SOT-23/SOT-323 200 Power Dissipation PD mW SOT-523 150 ℃ Junction Temperature TJ 150 ℃ Storage Temperature TSTG -40 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCC VIN IC IO ELECTRICAL CHARACTERISTICS (TA= 25℃) PARAMETER SYMBOL VI(OFF) Input Voltage VI(ON) Output Voltage VO(ON) Input Current II Output Current IO(OFF) DC Current Gain GI Input Resistance R1 Resistance Ratio R2/R1 Transition Frequency fT Note: Transition frequency of the device TEST CONDITIONS VCC= -5V, IOUT= -100μA VOUT= -0.2V, IOUT= -5mA IOUT/IIN= -10mA / -0.5 mA VIN= -5V VCC= -50V , VIN=0V VOUT= -5V, IOUT= -5mA VCE= -10 V, IE = 5mA, f=100MHz (Note) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX -0.5 UNIT -0.1 -0.3 -0.36 -0.5 V mA μA 22 1 250 28.6 1.2 kΩ -3 56 15.4 0.8 V MHz 2 of 3 QW-R206-044,D DTA124E ■ PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-044,D