Diodes DMN601VK-7 Dual n-channel enhancement mode field effect transistor Datasheet

DMN601VK
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
NEW PRODUCT
Lead-free Green
Features
•
•
•
•
•
•
•
•
•
•
Dual N-Channel MOSFET
Low On-Resistance
SOT-563
Low Gate Threshold Voltage
A
Low Input Capacitance
Min
Max
Typ
A
0.15
0.30
0.25
B
1.10
1.25
1.20
C
1.55
1.70
1.60
Fast Switching Speed
Low Input/Output Leakage
B C
Ultra-Small Surface Mount Package
D
Lead Free By Design/RoHS Compliant (Note 2)
D
ESD Protected Up To 2kV
G
"Green" Device (Note 4)
M
K
Mechanical Data
•
•
Case: SOT-563
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
•
•
Dim
H
Terminals Connections: See Diagram
G
0.90
1.10
1.00
H
1.50
1.70
1.60
K
0.56
0.60
0.60
L
0.10
0.30
0.20
M
0.10
0.18
0.11
All Dimensions in mm
L
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
0.50
Drain
D2
G1
S1
Body
Diode
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Gate
Marking: See Page 2
Ordering & Date Code Information: See Page 2
S2
G2
D1
Weight: 0.006 grams (approximate)
Gate
Protection
Diode
ESD protected up to 2kV
Source
EQUIVALENT CIRCUIT PER ELEMENT
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Continuous
Pulsed (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Note:
Symbol
Value
Units
VDSS
60
V
VGSS
±20
V
ID
305
800
mA
Pd
250
mW
RθJA
500
°C/W
Tj, TSTG
-65 to +150
°C
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10µS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30655 Rev. 2 - 2
1 of 4
www.diodes.com
DMN601VK
© Diodes Incorporated
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
60
⎯
⎯
V
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
250
nA
VDS = 50V, VGS = 0V
Gate-Source Leakage
IGSS
OFF CHARACTERISTICS (Note 5)
⎯
⎯
±200
⎯
⎯
±50
1.0
1.6
2.5
RDS (ON)
⎯
⎯
⎯
Forward Transfer Admittance
|Yfs|
⎯
Diode Forward Voltage (Note 5)
VSD
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Crss
VGS = ±10V, VDS = 0V
nA
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 5)
VGS(th)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
VDS = VGS, ID = 250µA
2.0
3.0
Ω
VGS = 10V, ID = 0.5A
VGS = 4.5V, ID = 200mA
284
⎯
ms
VDS =10V, ID = 0.2A
0.5
⎯
1.4
V
Ciss
⎯
⎯
50
pF
Coss
⎯
⎯
25
pF
⎯
⎯
5.0
pF
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
Notes:
1.00
VGS = 10V
8V
6V
5V
4V
3V
1.2
10V
VDS = 10V
Pulsed
8V
6V
1.0
5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VDS = 25V, VGS = 0V
f = 1.0MHz
5. Short duration test pulse used to minimize self-heating effect.
1.4
0.8
4V
0.6
0.4
0.2
TA = 125°C
0.10
TA = 75°C
TA = 25°C
3V
TA = -25°C
0.01
0
0
1
2
5
4
3
1
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
1.5
2
2.5
3
3.5
4.5
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2
VGS(th), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
Electrical Characteristics
10
VDS = 10V
VGS = 10V
Pulsed
ID = 1mA
Pulsed
TA = 125°C
1.5
TA = 85°C
TA = 150°C
1
1
TA = -55°C
0.5
0
-50
TA = 25°C
-25
0
25
50
75
100
125
150
Tch, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
DS30655 Rev. 2 - 2
2 of 4
www.diodes.com
0.1
0.001
TA = 0°C
TA = -25°C
0.1
0.01
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
1
DMN601VK
7
10
NEW PRODUCT
VGS = 5V
Pulsed
TA = 85°C
TA = 125°C
TA = 25°C
Pulsed
6
ID = 300mA
TA = 150°C
5
4
1
TA = -55°C
TA = 25°C
TA = 0°C
3
TA = -25°C
2
ID = 150mA
1
0.1
0
VGS = 10V
Pulsed
4
8
6
10
12
14
16
18
20
VGS, GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
1
VGS = 0V
Pulsed
ID = 300mA
IDR, REVERSE DRAIN CURRENT (A)
2.5
2
0
1
0.1
0.01
0.001
2
ID = 150mA
1.5
1
0.5
TA = 125°C
TA = 150°C
0.1
TA = 85°C
TA = 25°C
TA = 0°C
0.01
TA = -25°C
TA = -55°C
0
0.001
-75 -50
-25
0
25
50
75
100 125 150
0.5
0
Tch, CHANNEL TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Channel Temperature
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
IDR, REVERSE DRAIN CURRENT (A)
1
VGS = 10V
TA= 25°C
Pulsed
0.1
0.01
VGS = 0V
0.001
0.5
0
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Reverse Drain Current
vs. Source-Drain Voltage
1
VGS = 10V
Pulsed
TA = 25°C
TA = 150°C
0.1
TA = -55°C
TA = 85°C
0.01
0.001
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Reverse Drain Current
vs. Source-Drain Voltage
DS30655 Rev. 2 - 2
1
3 of 4
www.diodes.com
0.001
0.01
1
0.1
ID, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
DMN601VK
NEW PRODUCT
Ordering Information
Notes:
(Note 6)
Device
Packaging
Shipping
DMN601VK-7
SOT-563
3000/Tape & Reel
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
D2
G1
S1
K7K = Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
K7K YM
S2
G2
D1
Date Code Key
Year
2005
2006
2007
2008
2009
Code
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30655 Rev. 2 - 2
4 of 4
www.diodes.com
DMN601VK
Similar pages