DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS (Unit: mm) The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO 2.0 ± 0.2 and another commercial systems. FEATURES • 2. 0 1 ± 0. 2 Super Low Noise Figure & High Associated Gain Gate Width: Wg = 280 mm 2 C ORDERING INFORMATION PART NUMBER SUPPLYING FORM 0.5 TYP. • 4 2.0 ± 0.2 NF = 0.25 dB TYP., Ga = 16.0 dB TYP. at f = 4 GHz MARKING NE334S01-T1 Tape & reel 1000 pcs./reel NE334S01-T1B Tape & reel 4000 pcs./reel 1. 2. 3. 4. C 3 0.65 TYP. Source Drain Source Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) VDS 4.0 Gate to Source Voltage VGS –3.0 V ID IDSS mA Total Power Dissipation Ptot 300 mW Channel Temperature Tch 125 °C Storage Temperature Tstg –65 to +125 °C Drain Current 1.9 ± 0.2 1.6 V 1.5 MAX. Drain to Source Voltage 0.125 ± 0.05 0.4 MAX. 4.0 ± 0.2 RECOMMENDED OPERATING CONDITION (TA = 25 °C) CHARACTERISTIC TYP. MAX. Unit VDS 2 2.5 V Drain Current ID 15 20 mA Input Power Pin 0 dBm Drain to Source Voltage Document No. P11139EJ3V0DS00 (3rd edition) Date Published October 1996 P Printed in Japan SYMBOL MIN. © 1996 NE334S01 ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER MIN. TYP. MAX. UNIT TEST CONDITIONS 0.5 10 mA VGS = -3 V VDS = 2 V, VGS = 0 V Gate to Source Leak Current IGSO Saturated Drain Current IDSS 20 80 150 mA VGS(off) -0.2 -0.9 -2.5 V VDS = 2 V, ID = 100 mA Transconductance gm 70 85 mS VDS = 2 V, ID = 14 mA Noise Figure NF dB VDS = 2 V, ID = 15 mA, Associated Gain Ga dB f = 4 GHz Gate to Source Cutoff Voltage 2 SYMBOL 0.25 15.0 16.0 0.35 NE334S01 TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 500 VGS = 0 V 400 ID - Drain Current - mA Ptot - Total Power Dissipation - mW 100 300 200 –0.2 V 60 –0.4 V 40 –0.6 V 20 100 0 80 50 100 150 200 0 250 1 3 4 5 VDS - Drain to Source Voltage - V TA - Ambient Temperature - ˚C DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY 100 24 MSG. - Maximum Stable Gain - dB MAG. - Maximum Available Gain - dB |S21S|2 - Forward Insertion Gain - dB VDS = 2 V 80 ID - Drain Current - mA 2 60 40 20 0 –2.0 –1.0 VDS = 2 V ID = 15 mA 20 16 VGS - Gate to Source Voltage - V |S21S|2 MAG. 12 8 4 0 MSG. 1 2 4 6 8 10 14 20 30 f - Frequency - GHz Gain Calculations MSG. = MAG. = ½S21½ ½S12½ ½S21½ 2 (K ±ÖK -1) ½S12½ 1 + ½D½ - ½S11½ - ½S22½ 2 K= 2 2 2½S12½½S21½ D = S11×S22 - S21×S12 3 NE334S01 S-PARAMETERS VDS = 2 V, ID = 15 mA START 2 Ghz, STOP 18 Ghz, STEP 500 Mhz Marker 1: 4 GHz 2: 8 GHz 3: 12 GHz 4: 16 GHz 5: 18 GHz S11 S12 1.0 +90˚ 0.5 5 2.0 +135˚ +45˚ 4 3 ∞ 0 1 2 ±180˚ 0 3 5 2 4 –0.5 –135˚ –2.0 –45˚ 1 –1.0 –90˚ Rmax. = 1 S21 S22 +90˚ 1.0 Rmax. = 0.25 0.5 +135˚ 2.0 +45˚ 5 1 4 2 ±180˚ 0 5 0 ∞ 3 3 4 2 1 –135˚ –45˚ –90˚ 4 Rmax. = 1.0 –0.5 –2.0 –1.0 Rmax. = 1 NE334S01 S-PARAMETERS MAG. AND ANG. VDS = 2 V, ID = 15 mA FREQUENCY MHz S11 MAG. S21 ANG. MAG. (deg.) S12 ANG. MAG. (deg.) S22 ANG. MAG. (deg.) ANG. (deg.) 2000 .998 –41.7 7.162 140.1 .042 68.4 .415 –27.5 2500 .927 –47.5 6.856 133.6 .050 65.9 .479 –35.8 3000 .860 –61.3 6.603 122.0 .057 57.5 .423 –43.0 3500 .829 –69.9 6.305 114.4 .064 54.1 .429 –47.9 4000 .802 –79.2 6.033 106.8 .071 49.6 .426 –51.7 4500 .716 –87.5 5.687 98.5 .075 45.8 .406 –56.2 5000 .659 –93.9 5.415 91.6 .081 41.1 .394 –59.7 5500 .601 –99.7 5.184 84.7 .085 38.9 .374 –63.3 6000 .592 –108.5 5.050 77.6 .091 35.2 .340 –68.1 6500 .550 –118.5 4.912 70.5 .096 30.8 .311 –73.0 7000 .514 –130.2 4.774 63.0 .102 27.3 .279 –79.1 7500 .488 –144.5 4.600 55.4 .107 22.0 .232 –87.5 8000 .464 –158.9 4.401 47.9 .109 18.6 .189 –97.7 8500 .463 –171.7 4.187 41.0 .113 14.9 .155 –109.3 9000 .468 176.6 3.997 34.1 .114 11.5 .134 –126.9 9500 .472 166.4 3.812 27.7 .118 7.7 .121 –142.8 10000 .472 156.2 3.628 21.5 .119 4.7 .111 –156.2 10500 .476 147.0 3.477 15.6 .122 1.0 .103 –170.1 11000 .476 137.8 3.351 9.6 .124 –2.5 .098 174.4 11500 .488 127.7 3.251 3.5 .125 –5.8 .093 157.9 12000 .518 118.1 3.150 –2.9 .128 –9.2 .105 137.6 12500 .552 109.6 3.036 –9.7 .130 –12.9 .131 121.0 13000 .593 101.9 2.875 –16.4 .131 –16.7 .177 107.0 13500 .635 95.2 2.714 –22.7 .129 –21.2 .223 97.8 14000 .661 90.1 2.546 –28.1 .126 –22.5 .259 91.0 14500 .688 86.1 2.418 –32.6 .124 –24.9 .284 87.0 15000 .707 82.2 2.327 –37.0 .127 –27.4 .316 86.0 15500 .719 79.7 2.240 –41.8 .126 –28.8 .332 83.3 16000 .730 76.1 2.168 –46.8 .129 –31.6 .352 81.7 16500 .752 71.3 2.100 –52.7 .131 –33.2 .380 77.4 17000 .771 65.5 2.021 –58.4 .130 –38.5 .398 72.4 17500 .803 60.4 1.930 –65.1 .134 –42.2 .422 66.5 18000 .817 55.7 1.814 –70.5 .128 –44.3 .445 62.9 5 NE334S01 AMP. PARAMETERS VDS = 2 V, ID = 15 mA FREQUENCY 6 |S21| 2 GUmax GAmax MHz dB dB dB dB 2000 41.82 17.10 2500 26.36 3000 23.09 3500 4000 |S12| 2 K Delay Mason’s U G1 G2 ns dB –27.61 .10 .036 23.90 dB dB .82 16.72 –26.05 .23 .036 8.50 1.13 16.39 –24.82 .39 .064 5.83 .86 21.91 15.99 –23.94 .42 .042 5.04 .88 20.95 15.61 –22.95 .45 .042 4.47 .87 4500 19.00 15.10 –22.49 .60 .046 3.12 .78 5000 17.88 14.67 –21.87 .69 .038 27.689 2.47 .73 5500 16.89 14.29 –21.41 .78 .038 25.567 1.94 .65 6000 16.47 14.07 –20.78 .79 .039 27.520 1.87 .54 6500 15.83 13.83 –20.36 .84 .040 25.660 1.56 .44 7000 15.26 13.58 –19.85 .87 .041 25.850 1.33 .35 7500 14.68 13.25 –19.40 .91 .043 24.669 1.18 .24 8000 14.08 12.87 –19.24 .96 .041 23.510 1.05 .16 8500 13.59 12.44 –18.94 .98 .039 23.291 1.05 .11 9000 13.19 15.01 12.03 –18.84 1.00 .038 23.059 1.08 .08 9500 12.78 14.21 11.62 –18.57 1.02 .036 22.736 1.09 .06 10000 12.34 13.37 11.19 –18.48 1.06 .034 21.540 1.09 .05 10500 11.99 12.86 10.82 –18.28 1.08 .033 20.889 1.12 .05 11000 11.66 12.36 10.50 –18.14 1.10 .033 19.984 1.12 .04 11500 11.46 12.06 10.24 –18.05 1.12 .034 19.642 1.18 .04 12000 11.37 11.98 9.97 –17.83 1.10 .035 20.331 1.36 .05 12500 11.30 11.92 9.65 –17.73 1.08 .038 20.980 1.58 .08 13000 11.19 11.79 9.17 –17.63 1.07 .037 21.543 1.88 .14 13500 11.14 11.70 8.67 –17.81 1.06 .035 21.748 2.25 .22 14000 10.92 11.29 8.12 –17.97 1.08 .030 20.156 2.50 .30 14500 10.82 11.17 7.67 –18.12 1.08 .025 19.965 2.79 .37 15000 10.80 11.30 7.33 –17.94 1.05 .025 21.257 3.00 .46 15500 10.67 11.20 7.01 –17.99 1.04 .027 20.523 3.15 .51 16000 10.60 11.55 6.72 –17.76 1.01 .028 21.974 3.30 .58 16500 10.74 6.45 –17.68 .98 .033 22.748 3.62 .68 17000 10.78 6.11 –17.72 .96 .032 25.818 17500 11.05 5.71 –17.46 .89 .037 18000 10.92 5.17 –17.88 .91 .030 27.860 3.92 .75 4.49 .85 4.78 .96 NE334S01 Noise Parameters <TYPICAL CONSTANT NOISE FIGURE CIRCLE> 1.0 2.0 VDS = 2 V ID = 15 mA f = 4 GHz 0.5 Γopt ∗ 0.4 dB 0.6 dB 1.0 0.8 dB 0 ∞ –0.5 –2.0 –1.0 <Noise Parameters> VDS = 2 V, ID = 15 mA Freq (GHz) NFmin (dB) Ga (dB) Gopt. MAG. ANG. (deg.) Rn/50 2.0 0.23 17.0 0.77 15 0.19 4.0 0.25 16.0 0.58 43 0.18 6.0 0.28 14.7 0.43 82 0.13 8.0 0.31 13.6 0.32 127 0.08 10.0 0.38 12.5 0.27 175 0.07 12.0 0.48 11.5 0.27 –139 0.10 14.0 0.60 10.5 0.34 –100 0.17 16.0 0.73 9.6 0.48 –70 0.29 18.0 0.88 8.8 0.69 –56 0.46 7 NE334S01 TYPICAL MOUNT PAD LAYOUT 2.4 mm TYP. 2.4 mm TYP. 8 NE334S01 RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. <TYPES OF SURFACE MOUNT DEVICE> For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535E) Soldering process Soldering conditions Infrared ray reflow Peak package’s surface temperature: 230 °C or below, Reflow time: 30 seconds or below (210 °C or higher), Number of reflow process: 1, Exposure limit*: None Partial heating method Terminal temperature: 230 °C or below, Flow time: 10 seconds or below, Exposure limit*: None *: Symbol IR30-00 Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 °C and relative humidity at 65 % or less. Note: Do not apply more than a single process at once, except for “Partial heating method”. PRECAUTION: Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate. 9 NE334S01 [MEMO] 10 NE334S01 [MEMO] 11 NE334S01 Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5