NTE NTE7011 Integrated circuit 20w audio power amplifier circuit Datasheet

NTE7011
Integrated Circuit
20W Audio Power Amplifier Circuit
Description:
The NTE7011 is an integrated circuit in a 12−Lead SIP type package designed for use as a BTL power
amplifier with built−in headphone amp for portable stereo applications. Typical applications include
portable component stereos, car stereo, radio cassette recorders, and TV sound multiplex output.
Features:
D Low Quiescent Current, Low Distortion, Low Noise, High Output Power
D Wide Supply Voltage range: VCC = 6 to 26V
D Built−In Muting Circuit
D Built−In Protection Circuits:
Temperature, Surge, Overcurrent
D Built−In Headphone Amplifier Circuit
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26V
Peak Supply Voltage, VCC(surge) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Supply Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35.7W
Operating Ambient Temperature, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30°to +75°C
Storage Temperature, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Electrical Characteristics: (VCC = 15V, f = 1kHz, TA = +25°C unless otherwise specified)
Parameter
Quiescent Circuit Current
Symbol
Test Conditions
Min
Typ
Max
Unit
ICQ
Vi = 0, RL = 4Ω
−
45
75
mA
Output Noise Voltage
Vno
Rg = 10kΩ, f = 15Hz, to 30kHz,
12dB/OCT, RL = 4Ω
−
0.6
1.0
mV
Voltage Gain
GV
Vi = 5mV, RL = 4Ω
48.5
50.5
52.5
dB
THD
Vi = 5mV, RL = 4Ω
−
0.15
0.5
%
Power Amplifier
Total Harmonic Distortion
Electrical Characteristics (Cont’d): (VCC = 15V, f = 1kHz, TA = +25°C)
Parameter
Symbol
Maximum Output Power
Output Offset Voltage
PO
Test Conditions
THD = 10%, RL = 4Ω
VO(offset) Rg = 0Ω
Min
Typ
Max
Unit
20
23
−
W
−
−
150
mV
−
0.1
1.0
mV
Headphone Amp
Output Noise Voltage
Vno−H
Rg = 10Ω, f = 15Hz, to 30kHz,
12dB/OCT, RL = 33Ω
Voltage Gain
GV−H
Vi = 10mV, RL = 33Ω
17.5
19.5
21.5
dB
Maximum Output Power
PO−H
THD = 1%, RL = 33Ω
10
−
−
mW
Block Diagram
7
12
Headphone Amp.
Output Circuit
Input
Circuit
Ripple Rejection
Muting Circuit
Headphone Amp.
Output Circuit
10
2
11
Protection Circuit
(Temperature, Surge, Over Current)
Input
Circuit
9
SEPP
Output
Circuit
Driver
Circuit
SEPP
Output
Circuit
Driver
Circuit
8
4
GND (Input)
3
1
VCC
5
6
GND (Output)
Pin Connection Diagram
12 Output (Headphone Amp)
11 Ch 1 N.F.B.
10 GND (Input)
Front View
9
Input
8
Ch 1 N.F.B.
7
Ripple Filter
6
Ch 1 Bootstrap
5
Ch 1 Output
4
GND (Output)
3
Ch 2 Output
2
Ch 2 Bootstrap
1 VCC
1.181 (30.0)
.185
(4.7)
.945 (24.0)
.591
(15.0)
.140 (3.56)
.310
(7.87)
1
12
.295
(7.5)
Min
.100 (2.54) Typ
1.200 (30.5)
.106 (2.7)
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