Microchip LPS4414 High voltage input integrated switch step-down regulator Datasheet

MCP16301
High Voltage Input Integrated Switch Step-Down Regulator
Features
General Description
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The MCP16301 is a highly integrated, high-efficiency,
fixed frequency, step-down DC-DC converter in a
popular 6-pin SOT-23 package that operates from input
voltage sources up to 30V. Integrated features include
a high side switch, fixed frequency Peak Current Mode
Control, internal compensation, peak current limit and
overtemperature
protection.
Minimal
external
components are necessary to develop a complete
step-down DC-DC converter power supply.
Up to 96% Typical Efficiency
Input Voltage Range: 4.0V to 30V
Output Voltage Range: 2.0V to 15V
2% Output Voltage Accuracy
Integrated N-Channel Buck Switch: 460 mΩ
600 mA Output Current
500 kHz Fixed Frequency
Adjustable Output Voltage
Low Device Shutdown Current
Peak Current Mode Control
Internal Compensation
Stable with Ceramic Capacitors
Internal Soft-Start
Cycle by Cycle Peak Current Limit
Under Voltage Lockout (UVLO): 3.5V
Overtemperature Protection
Available Package: SOT-23-6
Applications
PIC®/dsPIC Microcontroller Bias Supply
24V Industrial Input DC-DC Conversion
Set-Top Boxes
DSL Cable Modems
Automotive
Wall Cube Regulation
SLA Battery Powered Devices
AC-DC Digital Control Power Source
Power Meters
D2 Package Linear Regulator Replacement
- See Figure 5-2
• Consumer
• Medical and Health Care
• Distributed Power Supplies
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© 2011 Microchip Technology Inc.
High converter efficiency is achieved by integrating the
current limited, low resistance, high-speed N-Channel
MOSFET and associated drive circuitry. High
switching frequency minimizes the size of external
filtering components resulting in a small solution size.
The MCP16301 can supply 600 mA of continuous
current while regulating the output voltage from 2.0V to
15V. An integrated, high-performance peak current
mode architecture keeps the output voltage tightly
regulated, even during input voltage steps and output
current transient conditions that are common in power
systems.
The EN input is used to turn the device on and off.
While turned off, only a few micro amps of current are
consumed from the input for power shedding and load
distribution applications.
Output voltage is set with an external resistor divider.
The MCP16301 is offered in a space saving SOT-23-6
surface mount package.
Package Type
MCP16301
6-Lead SOT-23
1
6 SW
GND 2
5 VIN
VFB 3
4 EN
BOOST
DS25004A-page 1
MCP16301
Typical Applications
1N4148
VIN
4.5V To 30V
CBOOST L1
100 nF 15 µH
BOOST
VOUT
3.3V @ 600 mA
SW
VIN
CIN
10 µF
COUT
2 X10 µF
40V
Schottky
Diode
31.2 KΩ
EN
VFB
GND
10 KΩ
1N4148
VIN
6.0V To 30V
CBOOST L1
100 nF 22 µH
BOOST
VOUT
5.0V @ 600 mA
SW
VIN
CIN
10 µF
40V
Schottky
Diode
EN
COUT
2 X10 µF
52.3 KΩ
VFB
GND
10 KΩ
100
VOUT = 5.0V
90
Efficiency (%)
80
70
VOUT = 3.3V
60
50
VIN = 12V
40
30
20
10
0
10
100
1000
IOUT (mA)
DS25004A-page 2
© 2011 Microchip Technology Inc.
MCP16301
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VIN, SW ............................................................... -0.5V to 40V
BOOST – GND ................................................... -0.5V to 46V
BOOST – SW Voltage........................................ -0.5V to 6.0V
VFB Voltage ........................................................ -0.5V to 6.0V
EN Voltage ............................................. -0.5V to (VIN + 0.3V)
Output Short Circuit Current ................................. Continuous
Power Dissipation ....................................... Internally Limited
Storage Temperature ................................... -65°C to +150°C
Ambient Temperature with Power Applied ..... -40°C to +85°C
Operating Junction Temperature.................. -40°C to +125°C
ESD Protection On All Pins:
HBM ................................................................. 3 kV
MM .................................................................200 V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VIN = VEN = 12V, VBOOST - VSW = 3.3V,
VOUT = 3.3V, IOUT = 100 mA, L = 15 µH, COUT = CIN = 2 X 10 µF X7R Ceramic Capacitors
Boldface specifications apply over the TA range of -40oC to +85oC.
Parameters
Sym
Min
Typ
Max
Units
Input Voltage
VIN
—
4.0
30
V
Feedback Voltage
VFB
0.784
0.800
0.816
V
VOUT
2.0
—
15.0
V
(ΔVFB/VFB)/ΔVIN
—
0.01
0.1
%/V
Output Voltage Adjust Range
Feedback Voltage
Line Regulation
Feedback Input Bias Current
Conditions
Note 1
Note 2
VIN = 12V to 30V;
IFB
-250
±10
+250
nA
Undervoltage Lockout Start
UVLOSTRT
—
3.5
4.0
V
VIN Rising
Undervoltage Lockout Stop
UVLOSTOP
2.4
3.0
—
V
VIN Falling
Undervoltage Lockout
Hysteresis
UVLOHYS
—
0.4
—
V
Switching Frequency
fSW
425
500
550
kHz
Maximum Duty Cycle
DCMAX
90
95
—
%
Minimum Duty Cycle
DCMIN
—
1
—
%
NMOS Switch On Resistance
RDS(ON)
—
0.46
—
Ω
VBOOST - VSW = 3.3V
NMOS Switch Current Limit
IN(MAX)
—
1.3
—
A
VBOOST - VSW = 3.3V
Quiescent Current
IQ
—
2
7.5
mA
VBOOST= 3.3V; Note 3
Quiescent Current - Shutdown
IQ
—
7
10
µA
VOUT = EN = 0V
Maximum Output Current
IOUT
600
—
—
mA
Note 1
EN Input Logic High
VIH
1.4
—
—
V
EN Input Logic Low
EN Input Leakage Current
Soft-Start Time
Note 1:
2:
3:
IOUT = 200 mA
VIN = 5V; VFB = 0.7V;
IOUT = 100 mA
VIL
—
—
0.4
V
IENLK
—
0.05
1.0
µA
VEN = 12V
tSS
—
150
—
µS
EN Low to High,
90% of VOUT
The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage
necessary for regulation. See characterization graphs for typical input to output operating voltage range.
For VIN < VOUT, VOUT will not remain in regulation.
VBOOST supply is derived from VOUT.
© 2011 Microchip Technology Inc.
DS25004A-page 3
MCP16301
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VIN = VEN = 12V, VBOOST - VSW = 3.3V,
VOUT = 3.3V, IOUT = 100 mA, L = 15 µH, COUT = CIN = 2 X 10 µF X7R Ceramic Capacitors
Boldface specifications apply over the TA range of -40oC to +85oC.
Parameters
Thermal Shutdown Die
Temperature
Die Temperature Hysteresis
Note 1:
2:
3:
Sym
Min
Typ
Max
Units
TSD
—
150
—
°C
TSDHYS
—
30
—
°C
Conditions
The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage
necessary for regulation. See characterization graphs for typical input to output operating voltage range.
For VIN < VOUT, VOUT will not remain in regulation.
VBOOST supply is derived from VOUT.
TEMPERATURE SPECIFICATIONS
Electrical Specifications:
Parameters
Sym
Min
Typ
Max
Units
Operating Junction Temperature Range
TJ
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Maximum Junction Temperature
TJ
—
—
+150
°C
θJA
—
190.5
—
°C/W
Conditions
Temperature Ranges
Steady State
Transient
Package Thermal Resistances
Thermal Resistance, 6L-SOT-23
DS25004A-page 4
EIA/JESD51-3 Standard
© 2011 Microchip Technology Inc.
MCP16301
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 200 mA,
TA = +25°C.
90
100
VIN = 6V
VIN = 12V
60
VIN = 30V
VOUT = 2.0V
50
70
VOUT = 12.0V
60
50
40
40
30
30
0
100
200
300
400
500
600
0
100
200
IOUT(mA)
FIGURE 2-1:
IOUT.
2.0V VOUT Efficiency vs.
FIGURE 2-4:
IOUT.
400
VIN = 12V
70
VIN = 30V
60
600
VIN = 16V
90
VOUT = 3.3V
50
VIN = 30V
VIN = 24V
80
Efficiency (%)
80
500
12V VOUT Efficiency vs.
100
VIN = 6V
90
Efficiency (%)
300
IOUT (mA)
100
70
VOUT = 15.0V
60
50
40
40
30
30
0
100
200
300
400
500
600
0
100
200
IOUT (mA)
FIGURE 2-2:
IOUT.
100
3.3V VOUT Efficiency vs.
FIGURE 2-5:
IOUT.
500
600
15V VOUT Efficiency vs.
VIN = 6V
5
V IN = 12V
VOUT = 3.3V
4
70
400
6
VIN = 6V
80
300
IOUT (mA)
90
V IN = 30V
60
IQ (mA)
Efficiency (%)
VIN = 30V
VIN = 24V
80
Efficiency (%)
Efficiency (%)
80
70
VIN = 16V
90
VOUT = 5.0V
IOUT = 0 mA
3
VIN = 12V
2
50
VIN = 30V
1
40
30
0
0
100
200
300
400
500
600
-40
-25
IOUT (mA)
FIGURE 2-3:
IOUT.
5.0V VOUT Efficiency vs.
© 2011 Microchip Technology Inc.
-10
5
20
35
50
65
80
Ambient Temperature (°C)
FIGURE 2-6:
Temperature.
Input Quiescent Current vs.
DS25004A-page 5
MCP16301
505
510
VIN = 12V
500
495
TA = +25°C
500
VOUT = 3.3V
VDS = 100 mV
490
IOUT = 200 mA
490
RDSON (mΩ)
Switching Frequency (kHz)
Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 200 mA,
TA = +25°C.
485
480
475
480
470
460
450
470
440
465
430
460
420
-40
-25
-10
5
20
35
50
65
80
3
3.5
4
Ambient Temperature (°C)
FIGURE 2-7:
Switching Frequency vs.
Temperature; VOUT = 3.3V.
FIGURE 2-10:
VIN = 12V
VOUT = 3.3V
0.801
95.75
95.7
95.65
95.6
95.55
IOUT = 100 mA
0.800
0.799
0.798
0.797
95.5
95.45
0.796
-40
-25
-10
5
20
35
50
65
80
-40
-25
Ambient Temperature (°C)
1600
FIGURE 2-11:
VOUT = 3.3V.
VIN = 30V
1400
Voltage (V)
VIN = 12V
1200
VIN = 6V
1000
VOUT = 3.3V
800
600
-40
-25
-10
5
20
35
50
65
80
3.60
3.55
3.50
3.45
3.40
3.35
3.30
3.25
3.20
3.15
3.10
5
20
35
50
65
80
FIGURE 2-9:
Peak Current Limit vs.
Temperature; VOUT = 3.3V.
VFB vs. Temperature;
UVLO Start
UVLO Stop
-40
-25
Ambient Temperature (°C)
DS25004A-page 6
-10
Ambient Temperature (°C)
FIGURE 2-8:
Maximum Duty Cycle vs.
Ambient Temperature; VOUT = 5.0V.
Peak Current Limit (mA)
5
Switch RDSON vs. VBOOST.
0.802
VIN = 5V
IOUT = 200 mA
95.8
VFB Voltage (V)
Maximum Duty Cycle (%)
95.85
4.5
Boost Voltage (V)
-10
5
20
35
50
65
80
Ambient Temperature (°C)
FIGURE 2-12:
Temperature.
Under Voltage Lockout vs.
© 2011 Microchip Technology Inc.
MCP16301
0.75
5.00
VIN = 12V
0.70
Minimum Input Voltage (V)
Enable Threshold Voltage (V)
Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 200 mA,
TA = +25°C.
VOUT = 3.3V
IOUT = 100 mA
0.65
0.60
0.55
0.50
0.45
0.40
-40
-25
-10
5
20
35
50
65
4.70
To Start
4.40
4.10
3.80
To Run
3.50
3.20
1
80
FIGURE 2-13:
Temperature.
VOUT
20 mV/DIV
AC coupled
EN Threshold Voltage vs.
10
100
1000
IOUT (mA)
Ambient Temperature (°C)
FIGURE 2-16:
Typical Minimum Input
Voltage vs. Output Current.
VOUT = 3.3V
IOUT = 100 mA
VIN = 12V
VOUT = 3.3V
IOUT = 50 mA
VIN = 12V
VOUT
2V/DIV
VSW
5V/DIV
VEN
2V/DIV
IL
100 mA/DIV
1 µs/DIV
FIGURE 2-14:
Waveforms.
VOUT =
20 mV/DIV
AC coupled
Light Load Switching
100 µs/DIV
µs/
FIGURE 2-17:
VOUT = 3.3V
IOUT = 600 mA
VIN = 12V
VOUT = 3.3V
IOUT = 100 mA
VIN = 12V
VOUT
1V/DIV
VSW =
5V/DIV
VIN
5V/DIV
IL =
20 mA/DIV
1 µs/DIV
FIGURE 2-15:
Waveforms.
Startup From Enable.
Heavy Load Switching
© 2011 Microchip Technology Inc.
100 µs/DIV
FIGURE 2-18:
Startup From VIN.
DS25004A-page 7
MCP16301
Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 200 mA,
TA = +25°C.
VOUT = 3.3V
IOUT = 100 mA to 600 mA
VIN = 12V
VOUT
AC coupled
100 mV/DIV
IOUT
200 mA/DIV
100 µs/DIV
FIGURE 2-19:
Load Transient Response.
VOUT = 3.3V
IOUT = 100 mA
VIN = 8V to 12V Step
VOUT
AC coupled
100 mV/DIV
VIN
1V/DIV
10 µs/DIV
FIGURE 2-20:
DS25004A-page 8
Line Transient Response.
© 2011 Microchip Technology Inc.
MCP16301
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
MCP16301
SOT-23
Symbol
Description
1
BOOST
2
GND
Boost voltage that drives the internal NMOS control switch. A bootstrap capacitor is
connected between the BOOST and SW pins.
Ground Pin
3
VFB
Output voltage feedback pin. Connect VFB to an external resistor divider to set the
output voltage.
4
EN
Enable pin. Logic high enables the operation. Do not allow this pin to float.
5
VIN
Input supply voltage pin for power and internal biasing.
6
SW
Output switch node, connects to the inductor, freewheeling diode and the bootstrap
capacitor.
3.1
Boost Pin (BOOST)
The high side of the floating supply used to turn the
integrated N-Channel MOSFET on and off is
connected to the boost pin.
3.2
Ground Pin (GND)
The ground or return pin is used for circuit ground
connection. The length of the trace from the input cap
return, output cap return and GND pin should be made
as short as possible to minimize the noise on the GND
pin.
3.3
Feedback Voltage Pin (VFB)
The VFB pin is used to provide output voltage regulation
by using a resistor divider. The VFB voltage will be
0.800V typical with the output voltage in regulation.
3.4
Enable Pin (EN)
3.5
Power Supply Input Voltage Pin
(VIN)
Connect the input voltage source to VIN. The input
source should be decoupled to GND with a
4.7 µF - 20 µF capacitor, depending on the impedance
of the source and output current. The input capacitor
provides AC current for the power switch and a stable
voltage source for the internal device power. This
capacitor should be connected as close as possible to
the VIN and GND pins. For lighter load applications, a
1 µF X7R or X5R ceramic capacitor can be used.
3.6
Switch Pin (SW)
The switch node pin is connected internally to the
N-channel switch, and externally to the SW node
consisting of the inductor and Schottky diode. The SW
node can rise very fast as a result of the internal switch
turning on. The external Schottky diode should be
connected close to the SW node and GND.
The EN pin is a logic-level input used to enable or
disable the device switching, and lower the quiescent
current while disabled. A logic high (> 1.4V) will enable
the regulator output. A logic low (<0.4V) will ensure that
the regulator is disabled.
© 2011 Microchip Technology Inc.
DS25004A-page 9
MCP16301
NOTES:
DS25004A-page 10
© 2011 Microchip Technology Inc.
MCP16301
4.0
DETAILED DESCRIPTION
4.1
Device Overview
The MCP16301 is a high input voltage step-down
regulator, capable of supplying 600 mA to a regulated
output voltage from 2.0V to 15V. Internally, the trimmed
500 kHz oscillator provides a fixed frequency, while the
Peak Current Mode Control architecture varies the duty
cycle for output voltage regulation. An internal floating
driver is used to turn the high side integrated
N-Channel MOSFET on and off. The power for this
driver is derived from an external boost capacitor
whose energy is supplied from a fixed voltage ranging
between 3.0V and 5.5V, typically the input or output
voltage of the converter. For applications with an output
voltage outside of this range, 12V for example, the
boost capacitor bias can be derived from the output
using a simple Zener diode regulator.
4.1.1
INTERNAL REFERENCE VOLTAGE
VREF
An integrated precise 0.8V reference combined with an
external resistor divider sets the desired converter output voltage. The resistor divider range can vary without
affecting the control system gain. High-value resistors
consume less current, but are more susceptible to
noise.
4.1.2
4.1.4
ENABLE INPUT
Enable input, (EN), is used to enable and disable the
device. If disabled, the MCP16301 device consumes a
minimal current from the input. Once enabled, the
internal soft start controls the output voltage rate of rise,
preventing high-inrush current and output voltage
overshoot.
4.1.5
SOFT START
The internal reference voltage rate of rise is controlled
during startup, minimizing the output voltage overshoot
and the inrush current.
4.1.6
UNDER VOLTAGE LOCKOUT
An integrated Under Voltage Lockout (UVLO) prevents
the converter from starting until the input voltage is high
enough for normal operation. The converter will typically start at 3.5V and operate down to 3.0V. Hysteresis
is added to prevent starting and stopping during
startup, as a result of loading the input voltage source.
4.1.7
OVERTEMPERATURE
PROTECTION
Overtemperature protection limits the silicon die
temperature to 150°C by turning the converter off. The
normal switching resumes at 120°C.
INTERNAL COMPENSATION
All control system components necessary for stable
operation over the entire device operating range are
integrated, including the error amplifier and inductor
current slope compensation. To add the proper amount
of slope compensation, the inductor value changes
along with the output voltage (see Table 5-1).
4.1.3
EXTERNAL COMPONENTS
External components consist of:
•
•
•
•
•
•
input capacitor
output filter (Inductor and Capacitor)
freewheeling diode
boost capacitor
boost blocking diode
resistor divider.
The selection of the external inductor, output capacitor,
input capacitor and freewheeling diode is dependent
upon the output voltage and the maximum output
current.
© 2011 Microchip Technology Inc.
DS25004A-page 11
MCP16301
VIN
BG
REF
CIN
VOUT
VREG
Boost
Pre
Charge
SS OTEMP
VREF
RTOP
+
Amp
-
FB
RCOMP
-
+
-
HS
Drive
SW
Schottky
Diode
PWM
Latch
R
Precharge
Overtemp
COUT
CS
+
+
CCOMP
VREF
EN
VOUT
S
Comp
Boost Diode
CBOOST
500 kHz OSC
+
RBOT
BOOST
RSENSE
SHDN all blocks
GND
Slope
Comp
GND
FIGURE 4-1:
4.2
4.2.1
MCP16301 Block Diagram.
Functional Description
STEP-DOWN OR BUCK
CONVERTER
The MCP16301 is a non-synchronous, step-down or
buck converter capable of stepping input voltages
ranging from 4V to 30V down to 2.0V to 15V for
VIN > VOUT.
The integrated high-side switch is used to chop or
modulate the input voltage using a controlled duty cycle
for output voltage regulation. High efficiency is
achieved by using a low resistance switch, low forward
drop diode, low equivalent series resistance (ESR),
inductor and capacitor. When the switch is turned on, a
DC voltage is applied to the inductor (VIN - VOUT),
resulting in a positive linear ramp of inductor current.
When the switch turns off, the applied inductor voltage
is equal to -VOUT, resulting in a negative linear ramp of
inductor current (ignoring the forward drop of the
Schottky diode).
For steady-state, continuous inductor current
operation, the positive inductor current ramp must
equal the negative current ramp in magnitude. While
operating in steady state, the switch duty cycle must be
equal to the relationship of VOUT/VIN for constant
output voltage regulation, under the condition that the
inductor current is continuous, or never reaches zero.
For discontinuous inductor current operation, the
steady-state duty cycle will be less than VOUT/VIN to
maintain voltage regulation. The average of the
DS25004A-page 12
chopped input voltage or SW node voltage is equal to
the output voltage, while the average of the inductor
current is equal to the output current.
IL
VOUT
SW
VIN
+
-
Schottky
Diode
L
COUT
IL
IOUT
0
VIN
SW
VOUT
on
on
on
off
off
Continuous Inductor Current Mode
IL
0
IOUT
VIN
SW
on
on
off
off
on
Discontinuous Inductor Current Mode
FIGURE 4-2:
Step-Down Converter.
© 2011 Microchip Technology Inc.
MCP16301
4.2.2
PEAK CURRENT MODE CONTROL
The MCP16301 integrates a Peak Current Mode
Control architecture, resulting in superior AC regulation
while minimizing the number of voltage loop
compensation components, and their size, for
integration. Peak Current Mode Control takes a small
portion of the inductor current, replicates it and
compares this replicated current sense signal with the
output of the integrated error voltage. In practice, the
inductor current and the internal switch current are
equal during the switch-on time. By adding this peak
current sense to the system control, the step-down
power train system is reduced from a 2nd order to a 1st
order. This reduces the system complexity and
increases its dynamic performance.
For Pulse-Width Modulation (PWM) duty cycles that
exceed 50%, the control system can become bimodal
where a wide pulse followed by a short pulse repeats
instead of the desired fixed pulse width. To prevent this
mode of operation, an internal compensating ramp is
summed into the current shown in Figure 4-1.
4.2.3
PULSE-WIDTH MODULATION
(PWM)
The internal oscillator periodically starts the switching
period, which in MCP16301’s case occurs every 2 µs
or 500 kHz. With the integrated switch turned on, the
inductor current ramps up until the sum of the current
sense and slope compensation ramp exceeds the integrated error amplifier output. The error amplifier output
slews up or down to increase or decrease the inductor
peak current feeding into the output LC filter. If the regulated output voltage is lower than its target, the inverting error amplifier output rises. This results in an
increase in the inductor current to correct for errors in
the output voltage. The fixed frequency duty cycle is
terminated when the sensed inductor peak current,
summed with the internal slope compensation,
exceeds the output voltage of the error amplifier. The
PWM latch is set by turning off the internal switch and
preventing it from turning on until the beginning of the
next cycle. An overtemperature signal, or boost cap
undervoltage, can also reset the PWM latch to asynchronously terminate the cycle.
4.2.4
HIGH SIDE DRIVE
The MCP16301 features an integrated high-side
N-Channel MOSFET for high efficiency step-down
power conversion. An N-Channel MOSFET is used for
its low resistance and size (instead of a P-Channel
MOSFET). The N-Channel MOSFET gate must be
driven above its source to fully turn on the transistor. A
gate-drive voltage above the input is necessary to turn
on the high side N-Channel. The high side drive voltage
should be between 3.0V and 5.5V. The N-Channel
source is connected to the inductor and Schottky diode,
or switch node. When the switch is off, the inductor current flows through the Schottky diode, providing a path
to recharge the boost cap from the boost voltage
source, typically the output voltage for 3.0V to 5.0V output applications. A boost-blocking diode is used to prevent current flow from the boost cap back into the
output during the internal switch-on time. Prior to
startup, the boost cap has no stored charge to drive the
switch. An internal regulator is used to “pre-charge” the
boost cap. Once pre-charged, the switch is turned on
and the inductor current flows. When the switch turns
off, the inductor current free-wheels through the
Schottky diode, providing a path to recharge the boost
cap. Worst case conditions for recharge occur when
the switch turns on for a very short duty cycle at light
load, limiting the inductor current ramp. In this case,
there is a small amount of time for the boost capacitor
to recharge. For high input voltages there is enough
pre-charge current to replace the boost cap charge. For
input voltages above 5.5V typical, the MCP16301
device will regulate the output voltage with no load.
After starting, the MCP16301 will regulate the output
voltage until the input voltage decreases below 4V. See
Figure 2-16 for device range of operation over input
voltage, output voltage and load.
4.2.5
ALTERNATIVE BOOST BIAS
For 3.0V to 5.0V output voltage applications, the boost
supply is typically the output voltage. For applications
with 3.0V < VOUT < 5.0V, an alternative boost supply
can be used.
Alternative boost supplies can be from the input, input
derived, output derived or an auxiliary system voltage.
For low voltage output applications with unregulated
input voltage, a shunt regulator derived from the input
can be used to derive the boost supply. For
applications with high output voltage or regulated high
input voltage, a series regulator can be used to derive
the boost supply.
© 2011 Microchip Technology Inc.
DS25004A-page 13
MCP16301
Boost Diode
C1
VZ = 5.1V
BOOST
RSH
CB
EN
L
MCP16301
VIN
2V
VIN
12V
VOUT
SW
COUT
FW Diode
CIN
RTOP
FB
GND
RBOT
3.0V to 5.5V External Supply
Boost Diode
BOOST
CB
EN
L
MCP16301
VIN
2V
VIN
12V
VOUT
SW
COUT
FW Diode
CIN
RTOP
FB
GND
RBOT
FIGURE 4-3:
Shunt and External Boost Supply.
Shunt Boost Supply Regulation is used for low output
voltage converters operating from a wide ranging input
source. A regulated 3.0V to 5.5V supply is needed to
provide high side-drive bias. The shunt uses a Zener
diode to clamp the voltage within the 3.0V to 5.5V
range using the resistance shown in Figure 4-3.
To calculate the shunt resistance, the boost drive
current can be estimated using Equation 4-1.
DS25004A-page 14
IBOOST_TYP for 3.3V Boost Supply = 0.6 mA
IBOOST_TYP for 5.0V Boost Supply = 0.8 mA.
EQUATION 4-1:
BOOST CURRENT
I BOOST = I BOOST_TYP × 1.5 mA
© 2011 Microchip Technology Inc.
MCP16301
To calculate the shunt resistance, the maximum IBOOST
and IZ current are used at the minimum input voltage
(Equation 4-2).
EQUATION 4-2:
VZ and IZ can be found on the Zener diode
manufacturer’s data sheet. Typical IZ = 1 mA.
SHUNT RESISTANCE
V INMIN – V Z
R SH = -----------------------------I Boost + I Z
Boost Diode VZ = 7.5V
BOOST
CB
EN
L
MCP16301
VIN
12V
VIN
15V to 30V
VOUT
SW
COUT
FW Diode
CIN
RTOP
FB
GND
RBOT
Boost Diode
BOOST
VZ = 7.5V
CB
EN
L
MCP16301
VIN
2V
VIN
12V
VOUT
SW
COUT
FW Diode
CIN
RTOP
FB
GND
RBOT
FIGURE 4-4:
Series Regulator Boost Supply.
Series regulator applications use a Zener diode to drop
the excess voltage. The series regulator bias source
can be input or output voltage derived, as shown in
Figure 4-4. The boost supply must remain between
3.0V and 5.5V at all times for proper circuit operation.
© 2011 Microchip Technology Inc.
DS25004A-page 15
MCP16301
NOTES:
DS25004A-page 16
© 2011 Microchip Technology Inc.
MCP16301
5.0
APPLICATION INFORMATION
5.1
Typical Applications
The MCP16301 step-down converter operates over a
wide input voltage range, up to 30V maximum. Typical
applications include generating a bias or VDD voltage
for the PIC® microcontrollers product line, digital control system bias supply for AC-DC converters, 24V
industrial input and similar applications.
5.2
Adjustable Output Voltage
Calculations
To calculate the resistor divider values for the
MCP16301, Equation 5-1 can be used. RTOP is connected to VOUT, RBOT is connected to GND and both
are connected to the VFB input pin.
EQUATION 5-1:
R TOP
V OUT
= R BOT × ⎛ ------------- – 1⎞
⎝ V FB
⎠
EXAMPLE 5-1:
VOUT
=
3.3V
VFB
=
0.8V
RBOT
=
10 kΩ
RTOP
=
31.25 kΩ (Standard Value = 31.2 kΩ)
VOUT
=
3.3V
EXAMPLE 5-2:
5.3
General Design Equations
The step down converter duty cycle can be estimated
using Equation 5-2, while operating in Continuous
Inductor Current Mode. This equation also counts the
forward drop of the freewheeling diode and internal
N-Channel MOSFET switch voltage drop. As the load
current increases, the switch voltage drop and diode
voltage drop increase, requiring a larger PWM duty
cycle to maintain the output voltage regulation. Switch
voltage drop is estimated by multiplying the switch
current times the switch resistance or RDSON.
EQUATION 5-2:
CONTINUOUS INDUCTOR
CURRENT DUTY CYCLE
( V OUT + V Diode )
D = ------------------------------------------------------( V IN – ( I SW × R DSON ) )
The MCP16301 device features an integrated slope
compensation to prevent the bimodal operation of the
PWM duty cycle. Internally, half of the inductor current
down slope is summed with the internal current sense
signal. For the proper amount of slope compensation,
it is recommended to keep the inductor down-slope
current constant by varying the inductance with VOUT,
where K = 0.22V/µH.
EQUATION 5-3:
K = V OUT ⁄ L
For VOUT = 3.3V,
recommended.
TABLE 5-1:
an
inductance
of
15 µH
RECOMMENDED INDUCTOR
VALUES
VOUT
=
5.0V
VFB
=
0.8V
RBOT
=
10 kΩ
VOUT
K
LSTANDARD
RTOP
=
52.5 kΩ (Standard Value = 52.3 kΩ)
2.0V
0.20
10 µH
VOUT
=
4.98V
3.3V
0.22
15 µH
5.0V
0.23
22 µH
12V
0.21
56 µH
15V
0.22
68 µH
The transconductance error amplifier gain is controlled
by its internal impedance. The external divider resistors
have no effect on system gain, so a wide range of
values can be used. A 10 kΩ resistor is recommended
as a good trade-off for quiescent current and noise
immunity.
© 2011 Microchip Technology Inc.
is
DS25004A-page 17
MCP16301
5.4
Input Capacitor Selection
5.6
The step-down converter input capacitor must filter the
high input ripple current, as a result of pulsing or
chopping the input voltage. The MCP16301 input
voltage pin is used to supply voltage for the power train
and as a source for internal bias. A low equivalent
series resistance (ESR), preferably a ceramic
capacitor,
is
recommended.
The
necessary
capacitance is dependent upon the maximum load
current and source impedance. Three capacitor
parameters to keep in mind are the voltage rating,
equivalent series resistance and the temperature
rating. For wide temperature range applications, a
multi-layer X7R dielectric is recommended, while for
applications with limited temperature range, a multilayer X5R dielectric is acceptable. Typically, input
capacitance between 4.7 µF and 10 µF is sufficient for
most applications. For applications with 100 mA to
200 mA load, a 1 µF X7R capacitor can be used,
depending on the input source and its impedance.
The input capacitor voltage rating should be a minimum
of VIN plus margin. Table 5-2 contains the
recommended range for the input capacitor value.
5.5
Output Capacitor Selection
The output capacitor helps in providing a stable output
voltage during sudden load transients, and reduces the
output voltage ripple. As with the input capacitor, X5R
and X7R ceramic capacitors are well suited for this
application.
The MCP16301 is internally compensated, so the
output capacitance range is limited. See Table 5-2 for
the recommended output capacitor range.
The amount and type of output capacitance and equivalent series resistance will have a significant effect on
the output ripple voltage and system stability. The
range of the output capacitance is limited due to the
integrated compensation of the MCP16301.
Inductor Selection
The MCP16301 is designed to be used with small surface mount inductors. Several specifications should be
considered prior to selecting an inductor. To optimize
system performance, the inductance value is determined by the output voltage (Table 5-1) so the inductor
ripple current is somewhat constant over the output
voltage range.
EQUATION 5-4:
INDUCTOR RIPPLE
CURRENT
V
L
Δ IL = -----L- × t ON
EXAMPLE 5-3:
VIN = 12V
VOUT = 3.3V
IOUT = 600 mA
EQUATION 5-5:
INDUCTOR PEAK
CURRENT
Δ IL
I LPK = -------- + I OUT
2
Inductor ripple current = 319 mA
Inductor peak current = 760 mA
An inductor saturation rating minimum of 760 mA is
recommended. Low ESR inductors result in higher
system efficiency. A trade-off between size, cost and
efficiency is made to achieve the desired results.
The output voltage capacitor voltage rating should be a
minimum of VOUT, plus margin.
Table 5-2 contains the recommended range for the
input and output capacitor value:
TABLE 5-2:
CAPACITOR VALUE RANGE
Parameter
Min
Max
CIN
2.2 µF
none
COUT
20 µF
none
DS25004A-page 18
© 2011 Microchip Technology Inc.
MCP16301
Size
WxLxH
(mm)
ME3220
15
0.52
0.90
3.2x2.521.0
LPS4414
15
0.440
0.92
4.3x4.3x1.4
LPS6235
15
0.125
2.00
6.0x6.0x3.5
MSS6132
15
0.135
1.56
6.1x6.1x3.2
MSS7341
15
0.057
1.78
7.3x7.3x4.1
ME3220
15
0.520
0.8
2.8x3.2x2.0
XFL2006
15
2.02
0.25
2.0x2.0x0.6
LPS3015
15
0.700
0.61
3.0x3.0x1.4
744028
15
0.750
0.35
2.8x2.8x1.1
744029
15
0.600
0.42 2.8x2.8x1.35
744025
15
0.400 0.900 2.8x2.8x2.8
744031
15
0.255 0.450 3.8x3.8x1.65
744042
15
0.175
Part Number
Value
(µH)
ISAT (A)
MCP16301 RECOMMENDED
3.3V INDUCTORS
DCR (Ω)
TABLE 5-3:
Coilcraft®
Wurth
5.7
The freewheeling diode creates a path for inductor current flow after the internal switch is turned off. The average diode current is dependent upon output load
current at duty cycle (D). The efficiency of the converter
is a function of the forward drop and speed of the freewheeling diode. A low forward drop Schottky diode is
recommended. The current rating and voltage rating of
the diode is application dependent. The diode voltage
rating should be a minimum of VIN, plus margin. For
example, a diode rating of 40V should be used for an
application with a maximum input of 30V. The average
diode current can be calculated using Equation 5-6.
EQUATION 5-6:
EXAMPLE 5-4:
4.8x4.8x1.8
Coiltronics®
SD12
15
0.48
SD18
15
0.266 0.831 5.2x5.2x1.8
SD20
15
0.193 0.718 5.2x5.2x2.0
SD3118
15
0.51
0.75
3.2x3.2x1.8
SD52
15
0.189
0.88
5.2x5.5.2.0
0.692 5.2x5.2x1.2
Sumida®
15
0.075
0.66
5.2x5.2x2.0
CDRH2D09C
15
0.52
0.24
3.2x3.2x1.0
CDRH2D162D
15
0.198
0.35
3.2x3.2x1.8
CDRH3D161H
15
0.328
0.65
VLF3012A
15
0.54
VLF30251
15
VLF4012A
15
VLF5014A
15
B82462G4332M
15
IOUT
= 0.5A
VIN
= 15V
VOUT
= 5V
D
= 5/15
ID1AVG
= 333 mA
A 0.5A to 1A diode is recommended.
TABLE 5-4:
App
CDPH4D19F
DIODE AVERAGE
CURRENT
I D1AVG = ( 1 – D ) × I OUT
Elektronik®
0.75
Freewheeling Diode
FREEWHEELING DIODES
Manufacturer
Part
Number
Rating
12 VIN
600 mA
Diodes
Inc.
DFLS120L-7
20V, 1A
4.0x4.0x1.8
24 VIN
100 mA
Diodes
Inc.
B0540Ws-7
40V, 0.5A
Diodes
Inc.
30V, 1A
2.8x2.6x1.2
18 VIN
600 mA
B130L-13-F
0.41
0.5
0.47
2.5x3.0x1.2
0.46
0.63
3.5x3.7x1.2
0.28
0.97
4.5x4.7x1.4
0.097
1.05
6x6x2.2
TDK - EPC®
5.8
Boost Diode
The boost diode is used to provide a charging path from
the low voltage gate drive source, while the switch
node is low. The boost diode blocks the high voltage of
the switch node from feeding back into the output voltage when the switch is turned on, forcing the switch
node high.
A standard 1N4148 ultra-fast diode is recommended
for its recovery speed, high voltage blocking capability,
availability and cost. The voltage rating required for the
boost diode is VIN.
For low boost voltage applications, a small Schottky
diode with the appropriately rated voltage can be used
to lower the forward drop, increasing the boost supply
for gate drive.
© 2011 Microchip Technology Inc.
DS25004A-page 19
MCP16301
5.9
Boost Capacitor
The boost capacitor is used to supply current for the
internal high side drive circuitry that is above the input
voltage. The boost capacitor must store enough energy
to completely drive the high side switch on and off. A
0.1 µF X5R or X7R capacitor is recommended for all
applications. The boost capacitor maximum voltage is
5.5V, so a 6.3V or 10V rated capacitor is recommended.
5.10
Thermal Calculations
The MCP16301 is available in a SOT-23-6 package. By
calculating the power dissipation and applying the
package thermal resistance (θJA), the junction temperature is estimated. The maximum continuous junction
temperature rating for the MCP16301 is +125°C.
To quickly estimate the internal power dissipation for
the switching step-down regulator, an empirical calculation using measured efficiency can be used. Given
the measured efficiency, the internal power dissipation
is estimated by Equation 5-7. This power dissipation
includes all internal and external component losses.
For a quick internal estimate, subtract the estimated
Schottky diode loss and inductor ESR loss from the
PDIS calculation in Equation 5-7.
EQUATION 5-7:
TOTAL POWER
DISSIPATION ESTIMATE
OUT × I OUT⎞
⎛V
------------------------------ – ( V OUT × I OUT ) = PDis
⎝ Efficiency ⎠
The difference between the first term, input power, and
the second term, power delivered, is the total system
power dissipation. The freewheeling Schottky diode
losses are determined by calculating the average diode
current and multiplying by the diode forward drop. The
inductor losses are estimated by PL = IOUT2 x LESR.
EQUATION 5-8:
DIODE POWER
DISSIPATION ESTIMATE
P Diode = V F × ( ( 1 – D ) × I OUT )
DS25004A-page 20
EXAMPLE 5-5:
VIN
= 10V
VOUT
= 5.0V
IOUT
= 0.4A
Efficiency
= 90%
Total System Dissipation
= 222 mW
LESR
= 0.15Ω
PL
= 24 mW
Diode VF
= 0.50
D
= 50%
PDiode
= 125 mW
MCP16301 internal power dissipation estimate:
PDIS - PL - PDIODE = 73 mW
θJA
= 198°C/W
Estimated Junction
Temperature Rise
= +14.5°C
5.11
PCB Layout Information
Good printed circuit board layout techniques are
important to any switching circuitry, and switching
power supplies are no different. When wiring the
switching high-current paths, short and wide traces
should be used. Therefore, it is important that the input
and output capacitors be placed as close as possible to
the MCP16301 to minimize the loop area.
The feedback resistors and feedback signal should be
routed away from the switching node and the switching
current loop. When possible, ground planes and traces
should be used to help shield the feedback signal and
minimize noise and magnetic interference.
A good MCP16301 layout starts with CIN placement.
CIN supplies current to the input of the circuit when the
switch is turned on. In addition to supplying highfrequency switch current, CIN also provides a stable
voltage source for the internal MCP16301 circuitry.
Unstable PWM operation can result if there are
excessive transients or ringing on the VIN pin of the
MCP16301 device. In Figure 5-1, CIN is placed close to
pin 5. A ground plane on the bottom of the board
provides a low resistive and inductive path for the
return current. The next priority in placement is the
freewheeling current loop formed by D1, COUT and L,
while strategically placing COUT return close to CIN
return. Next, CB and DB should be placed between the
boost pin and the switch node pin SW. This leaves
space close to the MCP16301 VFB pin to place RTOP
and RBOT. RTOP and RBOT are routed away from the
Switch node so noise is not coupled into the highimpedance VFB input.
© 2011 Microchip Technology Inc.
MCP16301
Bottom Plane is GND
MCP16301
Bottom Trace
RBOT RTOP 10 Ohm
EN
C
1 B DB
REN
VIN
VOUT
D1
L
2 x CIN
GND
COUT
COUT
GND
DB
4
BOOST
EN
1
CB
REN
VIN
5
MCP16301
SW
6
VIN
COUT
4V to 30V
CIN
RTOP
FB
Value
CIN
10 µF
COUT
2 x 10 µF
L
15 µH
RTOP
31.2 kΩ
RBOT
10 kΩ
D1
B140
DB
1N4148
CB
100 nF
FIGURE 5-1:
10 Ohm
D1
3
GND
2
Component
VOUT
3.3V
L
RBOT
*Note: 10 Ohm resistor is used with network analyzer, to measure
system gain and phase.
MCP16301 SOT-23-6 Recommended Layout, 600 mA Design.
© 2011 Microchip Technology Inc.
DS25004A-page 21
MCP16301
Bottom Plane is GND
MCP16301
RBOT
RTOP
DB
VIN
VOUT
CB
REN
L
CIN
GND
GND
D1
COUT
GND
DB
4
BOOST
EN
1
CB
REN
VIN
5
VIN
MCP16301
SW
6
COUT
4V to 30V
CIN
D1
RTOP
GND
Component
Value
CIN
1 µF
COUT
10 µF
L
15 µH
RTOP
31.2 kΩ
RBOT
10 kΩ
D1
PD3S130
CB
100 nF
REN
1 MΩ
FIGURE 5-2:
DS25004A-page 22
VOUT
3.3V
L
FB
3
2
RBOT
MCP16301 SOT-23-6 D2 Recommended Layout, 200 mA Design.
© 2011 Microchip Technology Inc.
MCP16301
6.0
TYPICAL APPLICATION CIRCUITS
Boost Diode
BOOST
CB
EN
L
MCP16301
VIN
3.3V
VIN
6V to 30V
VOUT
SW
COUT
FW Diode
CIN
GND
RTOP
FB
RBOT
Component
Value
Manufacturer
Part Number
Comment
Yuden®
UMK325B7475KM-T CAP 4.7µF 50V CERAMIC X7R 1210 10%
JMK212B7106KG-T CAP 10µF 6.3V CERAMIC X7R 0805 10%
CIN
2 x 4.7 µF
Taiyo
COUT
2 x 10 µF
Taiyo Yuden
15 µH
Coilcraft®
MSS6132-153ML
MSS6132 15µH Shielded Power Inductor
RTOP
31.2 kΩ
Panasonic®-ECG
ERJ-3EKF3162V
RES 31.6K OHM 1/10W 1% 0603 SMD
RBOT
10 kΩ
Panasonic-ECG
ERJ-3EKF1002V
RES 10.0K OHM 1/10W 1% 0603 SMD
FW Diode
B140
Diodes® Inc.
B140-13-F
L
Boost Diode
1N4148
Diodes Inc.
1N4448WS-7-F
CB
100 nF
AVX® Corporation
0603YC104KAT2A
FIGURE 6-1:
DIODE SCHOTTKY 40V 1A SMA
DIODE SWITCH 75V 200MW SOD-323
CAP 0.1µF 16V CERAMIC X7R 0603 10%
Typical Application 30V VIN to 3.3V VOUT.
© 2011 Microchip Technology Inc.
DS25004A-page 23
MCP16301
Boost Diode
BOOST
CB
EN
15V to 30V
MCP16301
VIN
DZ
L
VOUT
12V
SW
VIN
COUT
FW Diode
CIN
RTOP
FB
GND
RBOT
Component
Value
Manufacturer
Part Number
Comment
CIN
2 x 4.7 µF
Taiyo Yuden
UMK325B7475KM-T CAP 4.7uF 50V CERAMIC X7R 1210 10%
COUT
2 x 10 µF
Taiyo Yuden
JMK212B7106KG-T
CAP CER 10µF 25V X7R 10% 1206
L
56 µH
Coilcraft
MSS6132-153ML
MSS7341 56µH Shielded Power Inductor
RTOP
140 kΩ
Panasonic-ECG
ERJ-3EKF3162V
RES 140K OHM 1/10W 1% 0603 SMD
RBOT
10 kΩ
Panasonic-ECG
ERJ-3EKF1002V
FW Diode
B140
Diodes Inc.
B140-13-F
RES 10.0K OHM 1/10W 1% 0603 SMD
DIODE SCHOTTKY 40V 1A SMA
Boost Diode
1N4148
Diodes Inc.
1N4448WS-7-F
CB
100 nF
AVX Corporation
0603YC104KAT2A
CAP 0.1µF 16V CERAMIC X7R 0603 10%
DZ
7.5V Zener
Diodes Inc.
MMSZ5236BS-7-F
DIODE ZENER 7.5V 200MW SOD-323
FIGURE 6-2:
DS25004A-page 24
DIODE SWITCH 75V 200MW SOD-323
Typical Application 15V – 30V Input; 12V Output.
© 2011 Microchip Technology Inc.
MCP16301
DZ
Boost Diode
BOOST
CB
EN
12V
L
MCP16301
VIN
VOUT
SW
2V
VIN
COUT
FW Diode
CIN
GND
RTOP
FB
RBOT
Component
Value
Manufacturer
Part Number
Comment
CIN
10 µF
Taiyo Yuden
COUT
22 µF
Taiyo Yuden
JMK316B7226ML-T
CAP CER 22µF 6.3V X7R 1206
L
10 µH
Coilcraft
MSS4020-103ML
10 µH Shielded Power Inductor
RTOP
15 kΩ
Panasonic-ECG
ERJ-3EKF1502V
RES 15.0K OHM 1/10W 1% 0603 SMD
RBOT
10 kΩ
Panasonic-ECG
ERJ-3EKF1002V
FW Diode
PD3S
Diodes Inc.
PD3S120L-7
EMK316B7106KL-TD CAP CER 10µF 16V X7R 10% 1206
RES 10.0K OHM 1/10W 1% 0603 SMD
DIODE SCHOTTKY 1A 20V POWERDI323
Boost Diode
1N4148
Diodes Inc.
1N4448WS-7-F
CB
100 nF
AVX Corporation
0603YC104KAT2A
CAP 0.1uF 16V CERAMIC X7R 0603 10%
DZ
7.5V Zener
Diodes Inc.
MMSZ5236BS-7-F
DIODE ZENER 7.5V 200MW SOD-323
FIGURE 6-3:
DIODE SWITCH 75V 200MW SOD-323
Typical Application 12V Input; 2V Output at 600 mA.
© 2011 Microchip Technology Inc.
DS25004A-page 25
MCP16301
Boost Diode
DZ
CZ
BOOST
RZ
CB
EN
VIN
L
MCP16301
2.5V
VIN
10V to 16V
VOUT
SW
COUT
FW Diode
CIN
RTOP
FB
GND
RBOT
Component
Value
Manufacturer
CIN
10 µF
Taiyo Yuden
COUT
22 µF
Taiyo Yuden
JMK316B7226ML-T
L
RTOP
RBOT
FW Diode
Part Number
Comment
TMK316B7106KL-TD CAP CER 10 µF 25V X7R 10% 1206
CAP CER 22 µF 6.3V X7R 1206
12 µH
Coilcraft
LPS4414-123MLB
LPS4414 12 uH Shielded Power Inductor
21.5 kΩ
Panasonic-ECG
ERJ-3EKF2152V
RES 21.5K OHM 1/10W 1% 0603 SMD
10 kΩ
Panasonic-ECG
ERJ-3EKF1002V
DFLS120
Diodes Inc.
DFLS120L-7
RES 10.0K OHM 1/10W 1% 0603 SMD
DIODE SCHOTTKY 20V 1A POWERDI123
Boost Diode
1N4148
Diodes Inc.
1N4448WS-7-F
CB
100 nF
AVX Corporation
0603YC104KAT2A
DZ
7.5V Zener
Diodes Inc.
MMSZ5236BS-7-F
DIODE ZENER 7.5V 200MW SOD-323
CZ
1 µF
Taiyo Yuden
LMK107B7105KA-T
CAP CER 1.0UF 10V X7R 0603
RZ
1 kΩ
Panasonic-ECG
ERJ-8ENF1001V
FIGURE 6-4:
DS25004A-page 26
DIODE SWITCH 75V 200MW SOD-323
CAP 0.1uF 16V CERAMIC X7R 0603 10%
RES 1.00K OHM 1/4W 1% 1206 SMD
Typical Application 10V to 16V VIN to 2.5V VOUT.
© 2011 Microchip Technology Inc.
MCP16301
Boost Diode
EN
BOOST
CB
REN
L
MCP16301
VIN
4V to 30V
VOUT
3.3V
SW
VIN
COUT
FW Diode
CIN
GND
RTOP
FB
RBOT
Component
Value
Manufacturer
CIN
1 µF
Taiyo Yuden
GMK212B7105KG-T CAP CER 1.0µF 35V X7R 0805
COUT
10 µF
Taiyo Yuden
JMK107BJ106MA-T
L
Part Number
Comment
CAP CER 10µF 6.3V X5R 0603
15 µH
Coilcraft
LPS3015-153MLB
INDUCTOR POWER 15µH 0.61A SMD
31.2 kΩ
Panasonic-ECG
ERJ-2RKF3162X
RES 31.6K OHM 1/10W 1% 0402 SMD
RBOT
10 kΩ
Panasonic-ECG
ERJ-3EKF1002V
RES 10.0K OHM 1/10W 1% 0603 SMD
FW Diode
B0540
Diodes Inc.
B0540WS-7
DIODE SCHOTTKY 0.5A 40V SOD323
DIODE SWITCH 75V 200MW SOD-323
RTOP
Boost Diode
1N4148
Diodes Inc.
1N4448WS-7-F
CB
100 nF
TDK® Corporation
C1005X5R0J104M
REN
10 MΩ
Panasonic-ECG
ERJ-2RKF1004X
FIGURE 6-5:
CAP CER 0.10uF 6.3V X5R 0402
RES 1.00M OHM 1/10W 1% 0402 SMD
Typical Application 4V to 30V VIN to 3.3V VOUT at 150 mA.
© 2011 Microchip Technology Inc.
DS25004A-page 27
MCP16301
NOTES:
DS25004A-page 28
© 2011 Microchip Technology Inc.
MCP16301
7.0
PACKAGING INFORMATION
7.1
Package Marking Information
6-Lead SOT-23
HTNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Example
HT25
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3)
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2011 Microchip Technology Inc.
DS25004A-page 29
MCP16301
6-Lead Plastic Small Outline Transistor (CHY) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
b
4
N
E
E1
PIN 1 ID BY
LASER MARK
1
2
3
e
e1
D
A
A2
c
φ
L
A1
L1
Units
Dimension Limits
Number of Pins
MILLIMETERS
MIN
N
NOM
MAX
6
Pitch
e
0.95 BSC
Outside Lead Pitch
e1
1.90 BSC
Overall Height
A
0.90
–
Molded Package Thickness
A2
0.89
–
1.45
1.30
Standoff
A1
0.00
–
0.15
Overall Width
E
2.20
–
3.20
Molded Package Width
E1
1.30
–
1.80
Overall Length
D
2.70
–
3.10
Foot Length
L
0.10
–
0.60
Footprint
L1
0.35
–
0.80
Foot Angle
0°
–
30°
Lead Thickness
c
0.08
–
0.26
Lead Width
b
0.20
–
0.51
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-028B
DS25004A-page 30
© 2011 Microchip Technology Inc.
MCP16301
6-Lead Plastic Small Outline Transistor (CHY) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
© 2011 Microchip Technology Inc.
DS25004A-page 31
MCP16301
NOTES:
DS25004A-page 32
© 2011 Microchip Technology Inc.
MCP16301
APPENDIX A:
REVISION HISTORY
Revision A (May 2011)
• Original Release of this Document.
© 2011 Microchip Technology Inc.
DS25004A-page 33
MCP16301
NOTES:
DS25004A-page 34
© 2011 Microchip Technology Inc.
MCP16301
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X
-X
/XXX
Device
Tape
and Reel
Temperature
Range
Package
Device
MCP16301T: High Voltage Step-Down Regulator,
Tape and Reel
Temperature Range
I
Package
CHY = Plastic Small Outline Transistor (SOT-23), 6-lead
= -40°C to +85°C
© 2011 Microchip Technology Inc.
Examples:
a)
MCP16301T-I/CHY: Step-Down Regulator,
Tape and Reel,
Industrial Temperature
6LD SOT-23 pkg.
(Industrial)
DS25004A-page 35
MCP16301
NOTES:
DS25004A-page 36
© 2011 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
PIC32 logo, rfPIC and UNI/O are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified
logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance,
TSHARC, UniWinDriver, WiperLock and ZENA are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2011, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-61341-179-7
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2011 Microchip Technology Inc.
DS25004A-page 37
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
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Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
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Tel: 45-4450-2828
Fax: 45-4485-2829
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Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
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Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
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Tel: 81-45-471- 6166
Fax: 81-45-471-6122
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Tel: 49-89-627-144-0
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Tel: 678-957-9614
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Mississauga, Ontario,
Canada
Tel: 905-673-0699
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Tel: 61-2-9868-6733
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Tel: 86-10-8569-7000
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Tel: 86-23-8980-9588
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Fax: 82-2-558-5932 or
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Tel: 86-24-2334-2829
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Taiwan - Kaohsiung
Tel: 886-7-213-7830
Fax: 886-7-330-9305
China - Shenzhen
Tel: 86-755-8203-2660
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Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
DS25004A-page 38
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
05/02/11
© 2011 Microchip Technology Inc.