DMP1005UFDF P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits BVDSS RDS(ON) Max -12V 8.5mΩ @ VGS = -4.5V 12mΩ @ VGS = -2.5V ID Max TC = +25°C -26A -22A 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance ESD Protected up to 8kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Battery Management Application Power Management Functions Load Switches Case: U-DFN2020-6 (Type F) Case Material: Molded Plastic, ―Green‖ Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.007 grams (Approximate) D U-DFN2020-6 (Type F) G ESD PROTECTED Pin1 Gate Protection Diode Top View Pin Out Bottom View Bottom View S Equivalent Circuit Ordering Information (Note 4) Part Number DMP1005UFDF-7 DMP1005UFDF-13 Notes: Case U-DFN2020-6 (Type F) U-DFN2020-6 (Type F) Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-DFN2020-6 (Type F) 9P Date Code Key Year Code Month Code 2017 E Jan 1 2018 F Feb 2 DMP1005UFDF Document number: DS38752 Rev. 2 -2 Mar 3 9P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: E = 2017) M = Month (ex: 9 = September) YM ADVANCE INFORMATION Product Summary 2019 G Apr 4 May 5 2020 H Jun 6 1 of 7 www.diodes.com 2021 I Jul 7 Aug 8 2022 J Sep 9 Oct O 2023 K Nov N Dec D January 2017 © Diodes Incorporated DMP1005UFDF Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage ADVANCE INFORMATION Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C TC = +25°C TC = +70°C Steady State Value -12 ±8 -12.8 -10.3 ID Continuous Source-Drain Diode Current (Note 6) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH A IDM -26 -21 -70 IS -3.2 A IAS EAS -20 20 A mJ ID Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Unit V V A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) TA = +25°C Steady State t<10s TA = +25°C Steady State t<10s Steady State Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Symbol PD Value 0.9 145 92 2.1 59 38 14 -55 to +150 RJA PD RJA RJC TJ, TSTG Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -12 — — — — — — -10 ±10 V µA µA VGS = 0V, ID = -250μA VDS = -9.6V, VGS = 0V VGS = ±8V, VDS = 0V VGS(TH) -0.3 RDS(ON) — VSD — -1.0 8.5 12 18.5 -1.2 V Static Drain-Source On-Resistance — 5.8 7.3 9.5 -0.8 VDS = VGS, ID = -250μA VGS = -4.5V, ID = -5A VGS = -2.5V, ID = -4A VGS = -1.8V, ID = -2A VGS = 0V, IS = -1.0A Ciss Coss Crss Rg Qg Qg Qgs Qgd — — — — — — — — — — — — — — 2475 747 516 20 28 47 3.4 7.5 6.1 21 140 125 115 75 — — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: tD(ON) tR tD(OFF) tF tRR QRR mΩ V Test Condition pF VDS = -6V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = -6V, ID = -7A ns VDS = -6V, VGS = -4.5V, Rg = 1Ω, ID = -7A ns nC IF = -1.0A, di/dt = -100A/μs IF = -1.0A, di/dt = -100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP1005UFDF Document number: DS38752 Rev. 2 -2 2 of 7 www.diodes.com January 2017 © Diodes Incorporated DMP1005UFDF 30.0 20 VDS = -5V VGS = -1.5V 20.0 15.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = -1.8V VGS=-2.0V VGS = -2.5V VGS = -3.0V VGS = -4.5V VGS = -8.0V 10.0 VGS = -0.9V VGS = -1.0V 5.0 15 10 TJ = 125℃ TJ = 85℃ 5 TJ = 150℃ TJ = 25℃ TJ = -55℃ 0 0.0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.014 0.012 VGS = -1.8V 0.01 0.008 VGS = -2.5V 0.006 VGS = -4.5V 0.004 0.002 0 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage VGS = -4.5V 0.01 TJ =150℃ TJ =125℃ 0.008 TJ =85℃ TJ =25℃ 0.004 TJ =-55℃ 0.002 0 5 10 15 20 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature Document number: DS38752 Rev. 2 -2 2 0.025 0.02 0.015 0.01 0.005 ID = -5.0A 0 0 1 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) 8 Figure 4. Typical Transfer Characteristic 0 DMP1005UFDF 0.5 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.03 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.012 0.006 0 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE(W) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) ADVANCE INFORMATION 25.0 3 of 7 www.diodes.com 1.5 VGS = -4.5V, ID = -5A 1.2 VGS = -1.8V, ID = -2A 0.9 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature January 2017 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 0.016 0.014 0.012 VGS = -1.8V, ID = -2A 0.01 0.008 0.006 VGS = -4.5V, ID = -5A 0.004 0.002 0 -50 -25 0 25 50 75 100 125 0.8 0.6 ID = -1mA 0.4 ID = -250μA 0.2 0 150 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. junciton Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 20 10000 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V Is, SOURCE CURRENT (A) 15 10 TJ = 85oC TJ = 125oC 5 TJ = 150oC TJ = 25oC TJ = -55oC Ciss Coss 1000 Crss 100 0 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 2 4 6 8 10 12 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 100 8 ID, DRAIN CURRENT (A) RDS(ON) Limited 6 VGS (V) ADVANCE INFORMATION DMP1005UFDF VDS = -6V, ID = -7A 4 2 0 10 PW =-1ms 1 PW =-10ms 0.1 0.01 0 10 20 30 Qg (nC) Figure 11. Gate Charge DMP1005UFDF Document number: DS38752 Rev. 2 -2 40 50 4 of 7 www.diodes.com PW =-100µs PW =-100ms PW =-1s TJ(Max) = 150℃ TC = 25℃ PW =-10s DC Single Pulse DUT on 1*MRP Board VGS= -4.5V 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 January 2017 © Diodes Incorporated DMP1005UFDF D=0.7 D=0.5 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA = 139℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.0001 DMP1005UFDF Document number: DS38752 Rev. 2 -2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 5 of 7 www.diodes.com 100 1000 January 2017 © Diodes Incorporated DMP1005UFDF Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. ADVANCE INFORMATION U-DFN2020-6 (Type F) A1 A A3 Seating Plane D e3 e4 k2 D2a E z2 D2 E2a E2 k1 e2 k z1 e z(4x) L b U-DFN2020-6 (Type F) Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D2a 0.33 0.43 0.38 E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E2a 0.65 0.75 0.70 e 0.65 BSC e2 0.863 BSC e3 0.70 BSC e4 0.325 BSC k 0.37 BSC k1 0.15 BSC k2 0.36 BSC L 0.225 0.325 0.275 z 0.20 BSC z1 0.110 BSC z2 0.20 BSC All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) X3 C Y3 Dimensions Y X Y2 Y1 C X X1 X2 X3 Y Y1 Y2 Y3 Y4 Y4 X1 Value (in mm) 0.650 0.400 0.480 0.950 1.700 0.425 0.800 1.150 1.450 2.300 Pin1 X2 DMP1005UFDF Document number: DS38752 Rev. 2 -2 6 of 7 www.diodes.com January 2017 © Diodes Incorporated DMP1005UFDF IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DMP1005UFDF Document number: DS38752 Rev. 2 -2 7 of 7 www.diodes.com January 2017 © Diodes Incorporated