AP30G120CSW-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching VCES ▼ Low Saturation Voltage VCE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free IC 1200V 30A C G C TO-3P E G Absolute Maximum Ratings E Parameter Symbol Rating Units VCES Collector-Emitter Voltage 1200 V VGE Gate-Emitter Voltage +30 V IC@TC=25℃ Collector Current 60 A IC@TC=100℃ Collector Current 30 A ICM Pulsed Collector Current1 120 A IF@TC=100℃ Diode Forward Current 8 A IFM Diode Pulse Forward Current 40 A PD@TC=25℃ Maximum Power Dissipation 208 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ TL Maximum Lead Temp. for Soldering Purposes 300 ℃ , 1/8" from case for 5 seconds . Notes: 1.Pulse width limited by max. junction temperature . Thermal Data Parameter Symbol Rthj-c(IGBT) Value Units 0.6 ℃/W 2 ℃/W 40 ℃/W Thermal Resistance Junction-Case Rthj-c(Diode) Thermal Resistance Junction-Case Rthj-a Thermal Resistance Junction-Ambient Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol IGES Parameter Gate-to-Emitter Leakage Current Test Conditions VGE=+30V, VCE=0V ICES Collector-Emitter Leakage Current VCE=1200V, VGE=0V - - 1 mA VCE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=30A - 2.9 3.6 V VGE=15V, IC=60A - 3.8 - V VCE=VGE, IC=250uA 3 - 7 V VGE(th) Gate Threshold Voltage Min. - Typ. - Max. Units +500 nA Qg Total Gate Charge IC=30A - 63 100 nC Qge Gate-Emitter Charge VCC=500V - 12 - nC Qgc Gate-Collector Charge - 32 - nC td(on) Turn-on Delay Time - 40 - ns tr Rise Time - 45 - ns td(off) Turn-off Delay Time - 125 - ns tf Fall Time VGE=15V VCC=600V, Ic=30A, VGE=15V, RG=5Ω, Inductive Load - 430 860 ns Eon Turn-On Switching Loss - 1.3 - mJ Eoff Turn-Off Switching Loss - 3.1 - mJ Cies Input Capacitance VGE=0V - 1400 2240 pF Coes Output Capacitance VCE=30V - 120 - pF Cres Reverse Transfer Capacitance f=1.0MHz - 15 - pF Electrical Characteristics of Diode@Tj=25℃(unless otherwise specified) VF Forward Voltage IF=8A - 1.2 1.6 V trr Reverse Recovery Time IF=8A - 230 - ns Qrr Reverse Recovery Charge di/dt = 100 A/µs - 1.5 - uC Data and specifications subject to change without notice 1 201109301 AP30G120CSW-HF 160 120 20V 18V 15V IC , Collector Current (A) 120 12V 80 V GE =10V 40 20V 18V 15V o T C =150 C 100 IC , Collector Current (A) o T C =25 C 80 12V 60 V GE =10V 40 20 0 0 0 4 8 12 16 0 20 4 V CE , Collector-Emitter Voltage (V) 8 12 16 V CE , Collector-Emitter Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 120 6 V GE = 15 V V GE =15V VCE(sat) ,Saturation Voltage(V) IC , Collector Current(A) 100 80 T C =25 ℃ T C =150 ℃ 60 40 20 5 I C = 60 A 4 I C =30A 3 2 1 0 0 2 4 6 8 0 10 40 80 120 160 o Junction Temperature ( C) V CE , Collector-Emitter Voltage (V) Fig 3. Typical Saturation Voltage Characteristics Fig 4. Typical Collector- Emitter Voltage v.s. Junction Temperature f=1.0MHz 2400 2 I C =1mA 2000 Capacitance (pF) Normalized VGE(th) (V) 1.6 1.2 0.8 1600 C ies 1200 800 0.4 400 C oes C res 0 0 -50 0 50 100 o Junction Temperature ( C ) Fig 5. Gate Threshold Voltage 150 1 5 9 13 17 21 25 29 33 37 V CE , Collector-Emitter Voltage (V) Fig 6. Typical Capacitance Characterisitics v.s. Junction Temperature 2 AP30G120CSW-HF 1 Normalized Thermal Response (Rthjc) 1000 IC ,Collctor Current(A) 100 10us 100us 10 1 1ms 0.1 o T c =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 10ms 0.01 0.01 1 10 100 1000 0.00001 10000 0.0001 0.001 V CE ,Collector - Emitter Voltage(V) 0.01 0.1 1 10 t , Pulse Width (s) Fig 7. SOA Characteristics Fig 8. Effective Transient Thermal Impedance 10 10 TC=150oC VCE , Collector-Emitter Voltage(V) VCE , Collector-Emitter Voltage(V) o T C =25 C 8 6 I C = 60 A 4 I C = 30 A I C = 15 A 2 0 8 6 I C = 60 A 4 I C = 30 A I C = 15 A 2 0 0 4 8 12 16 20 0 V GE , Gate-Emitter Voltage(V) Fig 9. Saturation Voltage vs. VGE 8 12 16 20 Fig 10. Saturation Voltage vs. VGE 16 VGE , Gate -Emitter Voltage (V) 8 IF , Forward Current (A) 4 V GE , Gate-Emitter Voltage(V) 6 T j =150 o C T j =25 o C 4 2 I C = 30 A V CC =500V 12 8 4 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 20 40 60 V F , Forward Voltage (V) Q G , Gate Charge (nC) Fig11. Forward Characteristic of Fig 12. Gate Charge Characterisitics 80 Diode 3 AP30G120CSW-HF IC , Maximum DC Collector Current (A) 80 60 40 20 0 25 50 75 100 125 150 o T C , Case Temperature ( C) Fig 13. Maximum Collector Current VS. Case Temperature 4