INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF250P225，IIRF250P225 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·OR-ring and redundant power switches ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 69 A IDM Drain Current-Single Pulsed 276 A PD Total Dissipation @TC=25℃ 313 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 0.48 ℃/W 40 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF250P225，IIRF250P225 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA 250 VGS(th) Gate Threshold Voltage VDS=VGS; ID=270μA 2.0 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 4.0 V VGS=10V; ID=41A 22 mΩ Gate-Source Leakage Current VGS= 20V 0.1 μA IDSS Drain-Source Leakage Current VDS=200V; VGS= 0V 1.0 μA VSD Diode forward voltage IS=41A, VGS = 0V 1.2 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark