Shantou Huashan Electronic Devices Co.,Ltd. HTU4A60S ＮＯＮ ＩＮＳＵＬＡＴＥＤ ＴＹＰＥ ＳＥＮＳＩＴＩＶＥ ＧＡＴＥ ＴＲＩＡＣ （ＴＯ－２５１ ＰＡＣＫＡＧＥ） █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=4A) * High Commutation dv/dt * Sensitive Gate Triggering 4 Mode █ General Description The devices is sensitive gate triac suitable for direct coupling to TTL,HTL,CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. █ Absolute Maximum Ratings（Ta=25℃） T stg ——Storage Temperature ……………………………………………………………… －40~125℃ T j ——Operating Junction Temperature …………………………………………………… －40~125℃ PGM ——Peak Gate Power Dissipation ……………………………………………………………1.5W PG （AV） ——Average Gate Power Dissipation …………………………………………………… 0.1W VDRM ——Repetitive Peak Off-State Voltage …………………………………………………… 600V IT（RMS）——R.M.S On-State Current（Ta=95℃）………………………………………………… 4.0A VGM ——Peak Gate Voltage ……………………………………………………………………… 7.0V IGM ——Peak Gate Current ……………………………………………………………………… 1.0A ITSM ——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) ……………… 30/33A Shantou Huashan Electronic Devices Co.,Ltd. HTU4A60S █ Electrical Characteristics （Ta=25℃） Symbol IDRM Items Min. Repetitive Peak Off-State Current Typ. Max. Unit 1.0 mA Conditions VD =VDRM, Single Phase, Half Wave, VTM Peak On-State Voltage 1.7 V T J=125℃ IT=6A, Inst. Measurement I+GT1 Gate Trigger Current（Ⅰ） 5.0 mA VD =6V, RL =10 ohm I-GT1 Gate Trigger Current（Ⅱ） 5.0 mA VD =6V, RL =10 ohm I-GT3 Gate Trigger Current（Ⅲ） 5.0 mA VD =6V, RL =10 ohm I+GT3 Gate Trigger Current（Ⅳ） 10.0 mA VD =6V, RL =10 ohm V+GT1 Gate Trigger Voltage（Ⅰ） 1.4 V VD =6V, RL =10 ohm V-GT1 Gate Trigger Voltage（Ⅱ） 1.4 V VD =6V, RL =10 ohm V-GT3 Gate Trigger Voltage（Ⅲ） 1.4 V VD =6V, RL =10 ohm V+GT3 Gate Trigger Voltage（Ⅳ） 1.8 V VD =6V, RL =10 ohm 0.2 V T J=125℃,VD =1/2VDRM 5 V/µS T J=125℃,VD =2/3VDRM VGD (dv/dt)c Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation (di/dt)c= -0.5A/ms IH Rth(j-c) Holding Current 10 mA Thermal Resistance 3 ℃/W Junction to case Shantou Huashan Electronic Devices Co.,Ltd. HTU4A60S █ Performance Curves Gate Characteristics Fig 2. On-State Voltage On-state Current [A] On-state Voltage (V) Fig 1. Gate Current（mA） On-state Voltage（V） Fig 3. Gate Trigger Voltage vs. Junction Fig 4. On State Current vs. Maximum Power Dissipation Power Dissipation [W] Temperature Junction Temperature [℃］ RMS On-state current [A] Fig 5. On State Current vs. Fig 6. Surge On-State Current Rating ( Non-Repetitive ) Surge On-state Current [A] Allowable Case Temp. [°C] Allowable Case Temperature RMS On-state Current [A] Time（Cycles） Shantou Huashan Electronic Devices Co.,Ltd. Fig 7. Gate Trigger Current vs. HTU4A60S Fig 8. Transient Thermal Impedance Fig 9. Gate Trigger Characteristics Test Circuit Impedance [℃/W ] Junction Temperature [℃］ Transient Thermal Junction Temperature Ｔｉｍｅ（ｓｅｃ） Junction Temperature [℃］ Fig 9. Gate Trigger Characteristics Test Circuit １０Ω Test ProcedureⅠ １０Ω Test ProcedureⅡ １０Ω Test Procedure Ⅲ １０Ω Test Procedure Ⅳ