WINNERJOIN FM350 Chip schottky barrier diode Datasheet

RoHS
SS32-SS310
Chip Schottky Barrier Diodes
D
T
,. L
O
SMC
Silicon epitaxial
planer type
0.276(7.0)
0.260(6.6)
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
0.152(3.8)
0.144(3.6)
0.012(0.3) Typ.
0.189(4.8)
0.173(4.4)
For surface mounted applications.
0.244(6.2)
0.228(5.8)
C
Exceeds environmental standards of MIL-S-19500 /
228
0.032(0.8) Typ.
IC
0.040(1.0) Typ.
Low leakage current.
N
Mechanical data
Case : Molded plastic, JEDEC DO-214AB
Terminals : Solder plated, o
slderable per MIL-ST
D-750,
Method 2026
Polarity : Indicated by cathode band
Mounting P
osition : Any
Weight : 0.00585 ounce, 0.195 gr
am
R
T
O
0.087(2.2)
0.071(1.8)
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T A=25 oC unless otherwise noted)
C
E
L
PARAMETER
Forward rectified current
See Fig.1
Thermal resistance
E
Diode junction capacitance
J
E
Storage temperature
SYMBOLS
W
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Forward surge current
Reverse current
CONDITIONS
MARKING
CODE
VR = V
RRMT A
= 25
o
C
VR = V
RRMT A
= 125
o
C
VR *3
(V)
(V)
(V)
FM320
SS32
20
14
20
FM330
SS33
30
21
30
FM340
SS34
40
28
40
FM350
SS35
50
35
50
FM360
SS36
60
42
60
FM380
SS38
80
56
80
FM3100
S310
100
70
100
WEJ ELECTRONIC CO.
MAX.
UNIT
3.0
A
I FSM
80
A
0.5
mA
20
RqJA
f=1MHz and applied 4vDC reverse voltage
VRMS *2
TYP.
IR
Junction to ambient
VRRM*1
MIN.
IO
CJ
250
TSTG
VF
*4
(V)
0.55
-55
mA
o
55
C/w
pF
+150
o
Operating
temperature
( o C)
-55 to +125
0.70
-55 to +150
*1
Repetitive peak reverse voltage
*2
RMS voltage
*3
Continuous reverse voltage
*4
Maximum forward voltage
0.85
Http:// www.wej.cn
E-mail:[email protected]
C
RoHS
SS32-SS310
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
D
T
,. L
O
FIG.2-TYPICAL FORWARD
50
0
34
0
0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
PEAK FORWAARD SURGE CURRENT,(A)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
100
60
8.3ms Single Half
Tj=25 C
R
T
Sine Wave
40
JEDEC method
20
C
E
L
0
1
5
10
NUMBER OF CYCLES AT 60Hz
50
O
600
500
J
E
400
300
200
W
.01
.05
.1
.5
1
5
10
50
34
0
M
32
0~
F
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
CHARACTERISTICS
100
REVERSE VOLTAGE,(V)
WEJ ELECTRONIC CO.
.1
100
100
E
IC
0.1
Tj=25 C
Pulse Width 300us
1% Duty Cycle
FIG.5 - TYPICAL REVERSE
REVERSE LEAKAGE CURRENT, (mA)
JUNCTION CAPACITANCE,(pF)
700
C
1.0
N
FIG.4-TYPICAL JUNCTION CAPACITANCE
0
3.0
.01
80
100
FM
0
10
FM
0.5
0~
FM
0~
FM
36
0
31
00
3
FM
0~
35
0~
32
1.0
10
FM
35
FM
1.5
INSTANTANEOUS FORWARD CURRENT,(A)
2.0
FM
38
2.5
FM
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
3.0
10
1.0
Tj=75 C
Tj=25 C
.1
.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
Http:// www.wej.cn
E-mail:[email protected]
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