BDX65 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR The BDX65, BDX65A, BDX65 and BDX65C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX64, BDX64A, BDX64B, BDX64C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-BaseVoltage VEBO Emitter-Base Voltage IC Collector Current IB PT TJ TS Base Current Power Dissipation Junction Temperature Storage Temperature Value BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C IC(RMS) ICM @ TC = 25° Unit 60 80 100 120 80 100 120 140 5.0 12 16 0.2 117 A W -55 to +200 °C Value Unit 1.5 °C/W V V V A THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case 24/10/2012 COMSET SEMICONDUCTORS 1|4 BDX65 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Collector-Emitter Breakdown Voltage (*) IC=0.1 A IB=0 L=25mH ICEO Collector Cutoff Current VCE=30 V VCE=40 V VCE=50 V VCE=60 V IEBO Emitter Cutoff Current VBE=5 V Collector-Base Cutoff Current VCBO=60 V VCBO=40 V TCASE=200°C VCBO=50 V VCBO=80 V TCASE=200°C VCBO=100 V VCBO=60 V TCASE=200°C VCBO=120 V VCBO=70 V TCASE=200° VCEO(SUS) ICBO VCE(SAT) Collector-Emitter saturation Voltage (*) IC=5.0 A IB=20 mA VF Forward Voltage (pulse method) IF=3 A VBE Base-Emitter Voltage (*) IC=5.0 A VCE=3V 24/10/2012 BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C COMSET SEMICONDUCTORS Min Typ Max Unit 60 80 100 120 - - - V 1 mA - - 5.0 mA - - 0.4 - - 3 - - 0.4 - - 3 - - 0.4 - - 3 - - 0.4 - - - 3 - - 2 V - 1.8 - V - - 2.5 V 2|4 BDX65 – A – B – C Symbol Ratings Test Condition(s) fhfe Cut-off frequency VCE=3 V IC=5 A fT Transition Frequency VCE=3 V IC=5 A f=1 MHz VCE=3 V IC=1 A hFE VCE=3 V IC=5 A D.C. current gain (*) VCE=3 V IC=10 A BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C Min Typ Max Unit - 50 - kHz - 7 - MHz - 3300 - 1000 - - - 3700 - - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 24/10/2012 COMSET SEMICONDUCTORS 3|4 BDX65 – A – B – C MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) A B C D F G N P R U V min max 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Pin 1 : Pin 2 : Case : Base Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 24/10/2012 [email protected] COMSET SEMICONDUCTORS 4|4