LMH6618, LMH6619 www.ti.com SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 LMH6618 Single/LMH6619 Dual 130 MHz, 1.25 mA RRIO Operational Amplifiers Check for Samples: LMH6618, LMH6619 FEATURES 1 • 23 • • • • • • • • • • VS = 5V, RL = 1 kΩ, TA = 25°C and AV = +1, Unless Otherwise Specified. Operating Voltage Range 2.7V to 11V Supply Current per Channel 1.25 mA Small Signal Bandwidth 130 MHz Input Offset Voltage (Limit at 25°C) ±0.75 mV Slew Rate 55 V/µs Settling Time to 0.1% 90 ns Settling Time to 0.01% 120 ns SFDR (f = 100 kHz, AV = +1, VOUT = 2 VPP) 100 dBc 0.1 dB Bandwidth (AV = +2) 15 MHz Low Voltage Noise 10 nV/√Hz • • Industrial Temperature Grade −40°C to +125°C Rail-to-Rail Input and Output APPLICATIONS • • • • • • • ADC Driver DAC Buffer Active Filters High Speed Sensor Amplifier Current Sense Amplifier Portable Video STB, TV Video Amplifier DESCRIPTION The LMH6618 (single, with shutdown) and LMH6619 (dual) are 130 MHz rail-to-rail input and output amplifiers designed for ease of use in a wide range of applications requiring high speed, low supply current, low noise, and the ability to drive complex ADC and video loads. The operating voltage range extends from 2.7V to 11V and the supply current is typically 1.25 mA per channel at 5V. The LMH6618 and LMH6619 are members of the PowerWise® family and have an exceptional power-to-performance ratio. The amplifier’s voltage feedback design topology provides balanced inputs and high open loop gain for ease of use and accuracy in applications such as active filter design. Offset voltage is typically 0.1 mV and settling time to 0.01% is 120 ns which combined with an 100 dBc SFDR at 100 kHz makes the part suitable for use as an input buffer for popular 8-bit, 10-bit, 12-bit and 14-bit mega-sample ADCs. The input common mode range extends 200 mV beyond the supply rails. On a single 5V supply with a ground terminated 150Ω load the output swings to within 37 mV of the ground rail, while a mid-rail terminated 1 kΩ load will swing to 77 mV of either rail, providing true single supply operation and maximum signal dynamic range on low power rails. The amplifier output will source and sink 35 mA and drive up to 30 pF loads without the need for external compensation. The LMH6618 has an active low disable pin which reduces the supply current to 72 µA and is offered in the space saving 6-Pin SOT package. The LMH6619 is offered in the 8-Pin SOIC package. The LMH6618 and LMH6619 are available with a −40°C to +125°C extended industrial temperature grade. 1 2 3 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PowerWise, WEBENCH are registered trademarks of Texas Instruments. All other trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2007–2012, Texas Instruments Incorporated LMH6618, LMH6619 SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 www.ti.com Typical Application IN 1 PF 549: 549: 150 pF 1.24 k: + V + + V 1 nF V 5V 0.1 PF 1 PF 0.01 PF 14.3 k: 0.1 PF 10 PF C13 C11 - C5 ADC121S101 + 5.6 PF 10 PF C6 22: LMH6618 GND 0.1 PF 390 pF 0.1 PF 14.3 k: These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS ESD Tolerance (1) (2) Human Body Model For input pins only 2000V For all other pins 2000V Machine Model 200V Supply Voltage (VS = V+ – V−) Junction Temperature (1) (2) (3) 12V (3) 150°C max Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics. Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC). The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board. OPERATING RATINGS (1) Supply Voltage (VS = V+ – V−) Ambient Temperature Range 2.7V to 11V (2) −40°C to +125°C Package Thermal Resistance (θJA) (1) (2) 2 6-Pin SOT (DDC0006A) 231°C/W 8-Pin SOIC (D0008A) 160°C/W Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics. The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board. Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 LMH6618, LMH6619 www.ti.com SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 +3V ELECTRICAL CHARACTERISTICS Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 3V, V− = 0V, DISABLE = 3V, VCM = VO = V+/2, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes. (1) Symbol Parameter Condition Min (2) Typ (3) Max (2) Units Frequency Domain Response SSBW –3 dB Bandwidth Small Signal AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP 120 AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP 56 MHz GBW Gain Bandwidth (LMH6618) AV = 10, RF = 2 kΩ, RG = 221Ω, RL = 1 kΩ, VOUT = 0.2 VPP 55 71 MHz GBW Gain Bandwidth (LMH6619) AV = 10, RF = 2 kΩ, RG = 221Ω, RL = 1 kΩ, VOUT = 0.2 VPP 55 63 MHz LSBW −3 dB Bandwidth Large Signal AV = 1, RL = 1 kΩ, VOUT = 2 VPP 13 AV = 2, RL = 150Ω, VOUT = 2 VPP 13 MHz Peak Peaking AV = 1, CL = 5 pF 1.5 dB 0.1 dBBW 0.1 dB Bandwidth AV = 2, VOUT = 0.5 VPP , RF = RG = 825Ω 15 MHz DG Differential Gain AV = +2, 4.43 MHz, 0.6V < VOUT < 2V, RL = 150Ω to V+/2 0.1 % DP Differential Phase AV = +2, 4.43 MHz, 0.6V < VOUT < 2V, RL = 150Ω to V+/2 0.1 deg 36 ns 46 V/μs Time Domain Response tr/tf Rise & Fall Time 2V Step, AV = 1 SR Slew Rate 2V Step, AV = 1 ts_0.1 0.1% Settling Time 2V Step, AV = −1 90 ts_0.01 0.01% Settling Time 2V Step, AV = −1 120 fC = 100 kHz, VOUT= 2 VPP, RL = 1 kΩ 100 fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ 61 fC = 5 MHz, VOUT = 2 VPP, RL = 1 kΩ 47 36 ns Noise and Distortion Performance SFDR Spurious Free Dynamic Range dBc en Input Voltage Noise Density f = 100 kHz 10 nV//√Hz in Input Current Noise Density f = 100 kHz 1 pA//√Hz CT Crosstalk (LMH6619) f = 5 MHz, VIN = 2 VPP 80 dB VCM = 0.5V (pnp active) VCM = 2.5V (npn active) 0.1 Input, DC Performance VOS Input Offset Voltage TCVOS Input Offset Voltage Temperature Drift IB Input Bias Current (4) ±0.75 ±1.3 mV μV/°C 0.8 VCM = 0.5V (pnp active) −1.4 −2.6 VCM = 2.5V (npn active) +1.0 +1.8 ±0.27 μA μA IOS Input Offset Current 0.01 CIN Input Capacitance 1.5 pF RIN Input Resistance 8 MΩ CMVR Common Mode Voltage Range DC, CMRR ≥ 65 dB CMRR Common Mode Rejection Ratio VCM Stepped from −0.1V to 1.4V 78 96 VCM Stepped from 2.0V to 3.1V 81 107 RL = 1 kΩ to +2.7V or +0.3V 85 98 RL = 150Ω to +2.6V or +0.4V 76 82 AOL (1) (2) (3) (4) Open Loop Voltage Gain −0.2 3.2 V dB dB Boldface limits apply to temperature range of −40°C to 125°C Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the Statistical Quality Control (SQC) method. Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material. Voltage average drift is determined by dividing the change in VOS by temperature change. Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 Submit Documentation Feedback 3 LMH6618, LMH6619 SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 www.ti.com +3V ELECTRICAL CHARACTERISTICS (continued) Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 3V, V− = 0V, DISABLE = 3V, VCM = VO = V+/2, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes. (1) Symbol Parameter Condition Min Typ Max RL = 1 kΩ to V+/2 50 56 62 RL =150Ω to V+/2 160 172 198 RL = 1 kΩ to V+/2 60 66 74 RL = 150Ω to V+/2 170 184 217 RL = 150Ω to V− 29 39 43 RL = 1 kΩ to V+/2 50 56 62 RL =150Ω to V+/2 160 172 198 RL = 1 kΩ to V+/2 62 68 76 RL =150Ω to V+/2 175 189 222 RL = 150Ω to V− 34 44 48 (2) (3) (2) Units Output DC Characteristics VOUT Output Voltage Swing High (LMH6618) (Voltage from V+ Supply Rail) Output Voltage Swing Low (LMH6618) (Voltage from V− Supply Rail) Output Voltage Swing High (LMH6619) (Voltage from V+ Supply Rail) Output Voltage Swing Low (LMH6619) (Voltage from V− Supply Rail) IOUT Linear Output Current VOUT = V+/2 ROUT Output Resistance f = 1 MHz (5) ±25 mV from either rail mV from either rail ±35 mA 0.17 Ω Enable Pin Operation Enable High Voltage Threshold Enabled Enable Pin High Current VDISABLE = 3V Enable Low Voltage Threshold Disabled Enable Pin Low Current VDISABLE = 0V 2.0 V 0.04 µA 1.0 V 1 µA ton Turn-On Time 25 ns toff Turn-Off Time 90 ns 104 dB Power Supply Performance PSRR Power Supply Rejection Ratio DC, VCM = 0.5V, VS = 2.7V to 11V IS Supply Current (LMH6618) RL = ∞ 1.2 1.5 1.7 Supply Current (LMH6619) (per channel) RL = ∞ 1.2 1.5 1.75 Disable Shutdown Current DISABLE = 0V 59 85 ISD (5) 4 84 mA μA Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage the part. Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 LMH6618, LMH6619 www.ti.com SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 +5V ELECTRICAL CHARACTERISTICS Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = 0V, DISABLE = 5V, VCM = VO = V+/2, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes. Symbol Parameter Condition Min (1) Typ (2) Max (1) Units Frequency Domain Response SSBW –3 dB Bandwidth Small Signal AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP 130 AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP 53 MHz GBW Gain Bandwidth (LMH6618) AV = 10, RF = 2 kΩ, RG = 221Ω, RL = 1 kΩ, VOUT = 0.2 VPP 54 64 MHz GBW Gain Bandwidth (LMH6619) AV = 10, RF = 2 kΩ, RG = 221Ω, RL = 1 kΩ, VOUT = 0.2 VPP 54 57 MHz LSBW −3 dB Bandwidth Large Signal AV = 1, RL = 1 kΩ, VOUT = 2 VPP 15 AV = 2, RL = 150Ω, VOUT = 2 VPP 15 MHz Peak Peaking AV = 1, CL = 5 pF 0.5 dB 0.1 dBBW 0.1 dB Bandwidth AV = 2, VOUT = 0.5 VPP, RF = RG = 1 kΩ 15 MHz DG Differential Gain AV = +2, 4.43 MHz, 0.6V < VOUT < 2V, RL = 150Ω to V+/2 0.1 % DP Differential Phase AV = +2, 4.43 MHz, 0.6V < VOUT < 2V, RL = 150Ω to V+/2 0.1 deg 30 ns 55 V/μs Time Domain Response tr/tf Rise & Fall Time 2V Step, AV = 1 SR Slew Rate 2V Step, AV = 1 ts_0.1 0.1% Settling Time 2V Step, AV = −1 90 ts_0.01 0.01% Settling Time 2V Step, AV = −1 120 fC = 100 kHz, VOUT = 2 VPP, RL = 1 kΩ 100 fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ 88 fC = 5 MHz, VO = 2 VPP, RL = 1 kΩ 61 44 ns Distortion and Noise Performance SFDR Spurious Free Dynamic Range dBc en Input Voltage Noise Density f = 100 kHz 10 nV//√Hz in Input Current Noise Density f = 100 kHz 1 pA//√Hz CT Crosstalk (LMH6619) f = 5 MHz, VIN = 2 VPP 80 dB VCM = 0.5V (pnp active) VCM = 4.5V (npn active) 0.1 Input, DC Performance VOS Input Offset Voltage TCVOS Input Offset Voltage Temperature Drift IB Input Bias Current (3) ±0.75 ±1.3 0.8 mV µV/°C VCM = 0.5V (pnp active) −1.5 −2.4 VCM = 4.5V (npn active) +1.0 +1.9 ±0.26 μA μA IOS Input Offset Current 0.01 CIN Input Capacitance 1.5 pF RIN Input Resistance 8 MΩ CMVR Common Mode Voltage Range DC, CMRR ≥ 65 dB CMRR Common Mode Rejection Ratio VCM Stepped from −0.1V to 3.4V 81 98 VCM Stepped from 4.0V to 5.1V 84 108 RL = 1 kΩ to +4.6V or +0.4V 84 100 RL = 150Ω to +4.5V or +0.5V 78 83 AOL (1) (2) (3) Open Loop Voltage Gain −0.2 5.2 V dB dB Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the Statistical Quality Control (SQC) method. Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material. Voltage average drift is determined by dividing the change in VOS by temperature change. Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 Submit Documentation Feedback 5 LMH6618, LMH6619 SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 www.ti.com +5V ELECTRICAL CHARACTERISTICS (continued) Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = 0V, DISABLE = 5V, VCM = VO = V+/2, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes. Symbol Parameter Condition Min Typ Max RL = 1 kΩ to V+/2 60 73 82 RL = 150Ω to V+/2 230 255 295 RL = 1 kΩ to V+/2 75 83 96 RL = 150Ω to V+/2 250 270 321 RL = 150Ω to V− 32 43 45 RL = 1 kΩ to V+/2 60 73 82 RL = 150Ω to V+/2 230 255 295 RL = 1 kΩ to V+/2 77 85 98 RL = 150Ω to V+/2 255 275 326 RL = 150Ω to V− 37 48 50 (1) (2) (1) Units Output DC Characteristics VOUT Output Voltage Swing High (LMH6618) (Voltage from V+ Supply Rail) Output Voltage Swing Low (LMH6618) (Voltage from V− Supply Rail) Output Voltage Swing High (LMH6619) (Voltage from V+ Supply Rail) Output Voltage Swing Low (LMH6619) (Voltage from V− Supply Rail) IOUT Linear Output Current VOUT = V+/2 ROUT Output Resistance f = 1 MHz (4) ±25 mV from either rail mV from either rail ±35 mA 0.17 Ω Enable Pin Operation Enable High Voltage Threshold Enabled Enable Pin High Current VDISABLE = 5V Enable Low Voltage Threshold Disabled Enable Pin Low Current VDISABLE = 0V 3.0 V 1.2 µA 2.0 V 2.5 µA ton Turn-On Time 25 ns toff Turn-Off Time 90 ns 104 dB Power Supply Performance PSRR Power Supply Rejection Ratio DC, VCM = 0.5V, VS = 2.7V to 11V IS Supply Current (LMH6618) RL = ∞ 1.25 1.5 1.7 Supply Current (LMH6619) (per channel) RL = ∞ 1.3 1.5 1.75 Disable Shutdown Current DISABLE = 0V 72 105 ISD (4) 6 84 mA μA Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage the part. Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 LMH6618, LMH6619 www.ti.com SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 ±5V ELECTRICAL CHARACTERISTICS Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = −5V, DISABLE = 5V, VCM = VO = 0V, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes. Symbol Parameter Condition Min (1) Typ (2) Max (1) Units Frequency Domain Response SSBW –3 dB Bandwidth Small Signal AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP 140 AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP 53 MHz GBW Gain Bandwidth (LMH6618) AV = 10, RF = 2 kΩ, RG = 221Ω, RL = 1 kΩ, VOUT = 0.2 VPP 54 65 MHz GBW Gain Bandwidth (LMH6619) AV = 10, RF = 2 kΩ, RG = 221Ω, RL = 1 kΩ, VOUT = 0.2 VPP 54 58 MHz LSBW −3 dB Bandwidth Large Signal AV = 1, RL = 1 kΩ, VOUT = 2 VPP 16 AV = 2, RL = 150Ω, VOUT = 2 VPP 15 MHz Peak Peaking AV = 1, CL = 5 pF 0.05 dB 0.1 dBBW 0.1 dB Bandwidth AV = 2, VOUT = 0.5 VPP, RF = RG = 1.21 kΩ 15 MHz DG Differential Gain AV = +2, 4.43 MHz, 0.6V < VOUT < 2V, RL = 150Ω to V+/2 0.1 % DP Differential Phase AV = +2, 4.43 MHz, 0.6V < VOUT < 2V, RL = 150Ω to V+/2 0.1 deg 30 ns 57 V/μs Time Domain Response tr/tf Rise & Fall Time 2V Step, AV = 1 SR Slew Rate 2V Step, AV = 1 ts_0.1 0.1% Settling Time 2V Step, AV = −1 90 ts_0.01 0.01% Settling Time 2V Step, AV = −1 120 fC = 100 kHz, VOUT = 2 VPP, RL = 1 kΩ 100 fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ 88 fC = 5 MHz, VOUT = 2 VPP, RL = 1 kΩ 70 45 ns Noise and Distortion Performance SFDR Spurious Free Dynamic Range dBc en Input Voltage Noise Density f = 100 kHz 10 nV/√Hz in Input Current Noise Density f = 100 kHz 1 pA/√Hz CT Crosstalk (LMH6619) f = 5 MHz, VIN = 2 VPP 80 dB VCM = −4.5V (pnp active) VCM = 4.5V (npn active) 0.1 Input DC Performance VOS Input Offset Voltage TCVOS Input Offset Voltage Temperature Drift IB Input Bias Current (3) ±0.75 ±1.3 0.9 mV µV/°C VCM = −4.5V (pnp active) −1.5 −2.4 VCM = 4.5V (npn active) +1.0 +1.9 ±0.26 μA μA IOS Input Offset Current 0.01 CIN Input Capacitance 1.5 pF RIN Input Resistance 8 MΩ CMVR Common Mode Voltage Range DC, CMRR ≥ 65 dB CMRR Common Mode Rejection Ratio VCM Stepped from −5.1V to 3.4V 84 100 VCM Stepped from 4.0V to 5.1V 83 108 RL = 1 kΩ to +4.6V or −4.6V 86 95 RL = 150Ω to +4.3V or −4.3V 79 84 AOL (1) (2) (3) Open Loop Voltage Gain −5.2 5.2 V dB dB Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the Statistical Quality Control (SQC) method. Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material. Voltage average drift is determined by dividing the change in VOS by temperature change. Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 Submit Documentation Feedback 7 LMH6618, LMH6619 SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 www.ti.com ±5V ELECTRICAL CHARACTERISTICS (continued) Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = −5V, DISABLE = 5V, VCM = VO = 0V, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes. Symbol Parameter Condition Min Typ Max RL = 1 kΩ to GND 100 111 126 RL = 150Ω to GND 430 457 526 RL = 1 kΩ to GND 110 121 136 RL = 150Ω to GND 440 474 559 RL = 150Ω to V− 35 51 52 RL = 1 kΩ to GND 100 111 126 RL = 150Ω to GND 430 457 526 RL = 1 kΩ to GND 115 126 141 RL = 150Ω to GND 450 484 569 RL = 150Ω to V− 45 61 62 (1) (2) (1) Units Output DC Characteristics VOUT Output Voltage Swing High (LMH6618) (Voltage from V+ Supply Rail) Output Voltage Swing Low (LMH6618) (Voltage from V− Supply Rail) Output Voltage Swing High (LMH6619) (Voltage from V+ Supply Rail) Output Voltage Swing Low (LMH6619) (Voltage from V− Supply Rail) IOUT Linear Output Current VOUT = V+/2 ROUT Output Resistance f = 1 MHz (4) ±25 mV from either rail mV from either rail ±35 mA 0.17 Ω Enable Pin Operation Enable High Voltage Threshold Enabled Enable Pin High Current VDISABLE = +5V Enable Low Voltage Threshold Disabled Enable Pin Low Current VDISABLE = −5V 0.5 V 16 µA −0.5 V 17 µA ton Turn-On Time 25 ns toff Turn-Off Time 90 ns 104 dB Power Supply Performance PSRR Power Supply Rejection Ratio DC, VCM = −4.5V, VS = 2.7V to 11V IS Supply Current (LMH6618) RL = ∞ 1.35 1.6 1.9 Supply Current (LMH6619) (per channel) RL = ∞ 1.45 1.65 2.0 Disable Shutdown Current DISABLE = −5V 103 140 ISD (4) 8 84 mA μA Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage the part. Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 LMH6618, LMH6619 www.ti.com SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 Connection Diagram VOUT V - 1 6 2 5 DISABLE - + +IN + V 3 4 -IN Figure 1. 6-Pin SOT – Top View (See Package Number DDC0006A) OUT A 1 8 + V A -IN A +IN A 2 - + 7 3 6 B + V - 4 OUT B -IN B 5 +IN B Figure 2. 8-Pin SOIC – Top View (See Package Number D0008A) Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 Submit Documentation Feedback 9 LMH6618, LMH6619 SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. Closed Loop Frequency Response for Various Supplies Closed Loop Frequency Response for Various Supplies 3 3 + V = +1.5V 0 -3 ±5V ±1.5V + V = +5V GAIN (dB) GAIN (dB) - V = -2.5V 0 -6 ±2.5V -9 -12 -15 + V = +2.5V - V = -1.5V - V = -5V -3 A = +1 -6 VOUT = 0.2V -18 RL = 1 k: CL = 5 pF -21 1 AV = +1 RL = 150:||3 pF 10 100 VOUT = 0.2V -9 1000 1 10 100 1000 FREQUENCY (MHz) FREQUENCY (MHz) Figure 3. Figure 4. Closed Loop Frequency Response for Various Supplies Closed Loop Frequency Response for Various Supplies 3 3 + + V = +1.5V V = +1.5V - V = +5V -3 + V = +2.5V - V = -5V - V = -2.5V -6 -9 -12 AV = +2 -15 RL = 1 k: VOUT = 0.2V -18 1 10 100 - 0 V = -1.5V + NORMALIZED GAIN (dB) NORMALIZED GAIN (dB) 0 V = -1.5V + V = +5V - -3 V = -5V + -6 V = +2.5V V = -2.5V -9 -12 AV = +2 RF = RG = 2 k: -15 RL = 150: VOUT = 0.4V -18 1 10 1000 100 1000 FREQUENCY (MHz) FREQUENCY (MHz) Figure 5. Figure 6. Closed Loop Frequency Response for Various Temperatures Closed Loop Frequency Response for Various Temperatures 3 3 -40°C 0 -40°C 0 -3 -3 85°C -9 AV = +1 125°C + -12 V = +2.5V V = -2.5V -15 VOUT = 0.2 VPP -18 RL = 1 k: CL = 10 pF -21 1 10 10 25°C GAIN (dB) GAIN (dB) 25°C -6 100 1000 -6 85°C -9 AV = +1 + -12 V = +2.5V V = -2.5V -15 VOUT = 0.2 VPP -18 RL = 150: CL = 10 pF -21 1 10 125°C 100 FREQUENCY (MHz) FREQUENCY (MHz) Figure 7. Figure 8. Submit Documentation Feedback 1000 Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 LMH6618, LMH6619 www.ti.com SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 TYPICAL PERFORMANCE CHARACTERISTICS (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. Closed Loop Gain vs. Frequency for Various Gains Large Signal Frequency Response 3 3 + V = +5V 0 A=1 NORMALIZED GAIN (dB) NORMALIZED GAIN (dB) 0 -3 A=2 A=5 -6 A = 10 -9 + -12 V = +2.5V V = -2.5V -15 RL = 1 k: -18 CL = 5 pF VOUT = 0.2V -21 1 10 100 - V = -5V + -3 V = +2.5V + - V = +1.5V V = -2.5V - -6 V = -1.5V -9 -12 AV = +2 RF = RG = 2 k: -15 RL = 1 k: VOUT = 2V -18 1 10 1000 FREQUENCY (MHz) 100 1000 FREQUENCY (MHz) Figure 9. Figure 10. ±0.1 dB Gain Flatness for Various Supplies Small Signal Frequency Response with Various Capacitive Load 0.3 ±1.5V 0.1 ±2.5V 0 ±5V GAIN (dB) NORMALIZED GAIN (dB) 0.2 -0.1 -0.2 -0.3 0.01 0.10 1 10 100 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 CL = 30 pF CL = 20 pF CL = 10 pF CL = 5 pF CL = 0 pF + V = +5V - V = -5V RL = 1 k: VOUT = 0.2V 1 10 FREQUENCY (MHz) 1000 Figure 11. Figure 12. Small Signal Frequency Response with Capacitive Load and Various RISO HD2 vs. Frequency and Supply Voltage -20 11 + V = +5V 9 -30 - V = -5V 7 -40 DISTORTION (dBc) VOUT = 0.2 VPP 5 C = 100 pF L GAIN (dB) 100 FREQUENCY (MHz) RISO = 0 3 1 -1 RISO = 25 -3 RISO = 50 RISO = 100 -5 10 - V = -1.5V RF = 0: A = +1 -60 + V = +2.5V - V = -2.5V -70 -80 + V = +5V - -100 -9 1 + V = +1.5V RL = 1 k: -90 RISO = 75 -7 -50 VOUT = 2 VPP 100 1000 -110 0.1 V = -5V 1 10 FREQUENCY (MHz) FREQUENCY (MHz) Figure 13. Figure 14. Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 Submit Documentation Feedback 11 LMH6618, LMH6619 SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. HD3 vs. Frequency and Supply Voltage -20 V = +1.5V - RL = 1 k: V = -1.5V DISTORTION (dBc) -50 -60 + V = +2.5V -70 - V = -2.5V -80 HD3, RL = 150: - RF = 0: A = +1 -40 DISTORTION (dBc) -20 VOUT = 2 VPP -30 V+ = +2.5V + VOUT = 2 VPP -30 HD2 and HD3 vs. Frequency and Load -40 V = -2.5V RF = 0: -50 A = +1 HD2, RL = 150: -60 -70 -80 -90 -90 HD2, RL = 1 k: + V = +5V -100 -100 - HD3, RL = 1 k: V = -5V -110 0.1 1 -110 0.1 10 1 FREQUENCY (MHz) FREQUENCY (MHz) Figure 16. HD2 and HD3 vs. Common Mode Voltage HD2 and HD3 vs. Common Mode Voltage HD2 -50 fIN = 1 MHz + V = +2.5V - -60 DISTORTION (dBc) Figure 15. V = -2.5V -60 -80 -90 -100 -110 -120 0 1 2 V = +2.5V 3 4 5 -90 -100 - 6 7 8 9 10 - 3 4 5 6 7 8 Figure 17. Figure 18. HD2 vs. Frequency and Gain HD3 vs. Frequency and Gain -30 10 VOUT = 2 VPP -40 V+ = +2.5V - - V = -2.5V -50 G = +10, HD2 DISTORTION (dBc) RL = 1 k: 9 -30 VOUT = 2 VPP -40 V+ = +2.5V DISTORTION (dBc) 2 V = -2.5V INPUT COMMON MODE VOLTAGE (V) INPUT COMMON MODE VOLTAGE (V) -50 1 V = +2.5V - V = -5V V = -5V 0 + + V = +5V - -120 HD3 HD2 HD3 + V = +5V -110 V = -2.5V V = -5V V = -5V RF = 0 A = +1 -80 + - - RL = 1 k: -70 HD3 HD3 + V = +5V VOUT = 1 VPP - V = -2.5V RF = 0 A = +1 HD2 + V = +5V + V = +2.5V RL = 1 k: -70 fIN = 100 kHz HD2 VOUT = 1 VPP DISTORTION (dBc) -50 10 -60 RF = 2 k: -70 -80 G = +1, HD2 -90 V = -2.5V RL = 1 k: -60 RF = 2 k: G = +2, HD3 -70 G = +10, HD3 -80 -90 G = +1, HD3 -100 -100 G = +2, HD2 -110 0.1 12 1 10 -110 0.1 1 FREQUENCY (MHz) FREQUENCY (MHz) Figure 19. Figure 20. Submit Documentation Feedback 10 Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 LMH6618, LMH6619 www.ti.com SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 TYPICAL PERFORMANCE CHARACTERISTICS (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. HD2 vs. Output Swing Open Loop Gain/Phase 120 120 100 PHASE 40 40 20 + 20 HD2 (dBc) PHASE (°) GAIN (dB) 60 GAIN V = +2.5V - 0 RL = 1 k: CL = 5 pF -20 1k 10k 100k 5 MHz -60 -70 1 MHz 500 kHz 1M 10M 100M -20 -90 -40 1G -100 100 kHz 0 1 2 FREQUENCY (Hz) -20 4 Figure 22. HD3 vs. Output Swing HD2 vs. Output Swing + -30 10 MHz -40 5 MHz + V = +2.5V HD2 (dBc) -50 -60 -70 -80 5 -20 10 MHz - V = -2.5V -40 AV = -1 -50 RL = 1 k: HD3 (dBc) 3 VOUT (VPP) Figure 21. V = +2.5V -30 10 MHz -80 0 V = -2.5V + V = +2.5V -40 V- = -2.5V AV = -1 -50 RL = 1 k: 80 80 60 -30 100 - AV = +2 RL = 1 k: -70 1 MHz -80 1 MHz -90 V = -2.5V 5 MHz -60 500 kHz -90 500 kHz -100 -100 100 kHz 100 kHz -110 -110 0 1 2 3 4 5 0 1 2 3 VOUT (VPP) VOUT (VPP) Figure 23. Figure 24. HD2 vs. Output Swing HD3 vs. Output Swing 4 5 -20 -20 10 MHz -30 -30 10 MHz -40 -40 - -50 V = -2.5V HD3 (dBc) HD2 (dBc) + V = +2.5V 5 MHz -50 AV = +2 -60 1 MHz RL = 150: -70 500 kHz -80 + V = -2.5V -70 AV = +2 RL = 1 k: 1 MHz -90 100 kHz 500 kHz -100 100 kHz -110 -110 0 1 2 - -60 -80 -90 -100 V = +2.5V 5 MHz 3 4 5 0 1 2 3 VOUT (VPP) VOUT (VPP) Figure 25. Figure 26. Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 4 5 Submit Documentation Feedback 13 LMH6618, LMH6619 SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. HD3 vs. Output Swing THD vs. Output Swing -30 -20 -30 -40 + V = +2.5V 5 MHz -50 -50 - 5 MHz V = -2.5V THD (dBc) HD3 (dBc) 10 MHz -40 10 MHz AV = +2 -60 RL = 150: -70 1 MHz + V = +2.5V - -60 V = -2.5V AV = -1 -70 RL = 1 k: 1 MHz -80 500 kHz -80 500 kHz -90 -90 -100 100 kHz 100 kHz -100 -110 0 1 2 3 4 0 5 1 2 3 4 5 OUTPUT SWING (VPP) VOUT (VPP) Figure 27. Figure 28. Settling Time vs. Input Step Amplitude (Output Slew and Settle Time) Input Noise vs. Frequency 1000 140 1000 + SETTLING TIME (ns) 120 100 FALLING, 0.1% 80 60 RISING, 0.1% 40 AV = -1 VOLTAGE NOISE (nV/ Hz) - V = -2.5V 100 100 VOLTAGE NOISE 10 10 CURRENT NOISE (pA/ Hz) V = +2.5V + 20 V = +2.5V - V = -2.5V 0 1 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 CURRENT NOISE 100 1k 10k 100k 1M 1 10M FREQUENCY (Hz) OUTPUT SWING (VPP) Figure 29. Figure 30. VOS vs. VOUT VOS vs. VOUT 6.0 6.0 + + V = +2.5V V = +2.5V - V = -2.5V 4.0 - V = -2.5V 4.0 RL = 150: RL = 1 k: 2.0 25°C 0 -2.0 14 -40°C VOS (mV) VOS (mV) 2.0 125°C -40°C 25°C 0 -2.0 125°C -4.0 -4.0 -6.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5 -6.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5 VOUT (V) VOUT (V) Figure 31. Figure 32. Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 LMH6618, LMH6619 www.ti.com SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 TYPICAL PERFORMANCE CHARACTERISTICS (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. VOS vs. VCM VOS vs. VS (pnp) 0.3 0.3 -40°C -40°C 0.2 0.2 0.1 VOS (mV) VOS (mV) 0.1 25°C 0 -0.1 -0.2 125°C -0.3 0 25°C - -0.1 V = -0.5V + VS = V - V -0.2 VCM = 0V -0.4 + V = +2.5V -0.5 -0.3 - 125°C V = -2.5V -0.6 -0.5 -0.4 0.5 1.5 2.5 3.5 4.5 5.5 2 3 4 5 6 7 8 9 10 11 12 VS (V) VCM (V) Figure 33. Figure 34. VOS vs. VS (npn) VOS vs. IOUT 0.6 0.3 + V = +2.5V -40°C 0.2 - 0.4 0.1 -40°C V = -2.5V 0.2 VOS (mV) VOS (mV) 25°C 0 125°C -0.1 -0.2 125°C - VS = V - V -0.3 25°C -0.2 -0.4 + V = +0.5V + 0 -0.6 VCM = 0V -0.4 2 3 4 5 6 7 8 9 -0.8 -40 -30 -20 -10 10 11 12 10 IOUT (mA) Figure 35. Figure 36. VOS Distribution (pnp and npn) IB vs. VS (pnp) 9 20 30 40 -1.0 - 8 V = -0.5V 7 VS = V - V + - VCM = 0V 6 25°C IBIAS (PA) RELATIVE FREQUENCY (%) 0 VS (V) 5 4 -1.5 -40°C 3 125°C 2 1 -0. 7 -0. 0 60 -0. 5 -0. 0 40 -0. 30 -0. 20 -0. 10 0 0.1 0 0.2 0 0.3 0 0.4 0 0.5 0 0.6 0 0.7 0 0 -2.0 0 2 4 6 8 10 12 VS (V) VOS (mV) Figure 37. Figure 38. Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 Submit Documentation Feedback 15 LMH6618, LMH6619 SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. IB vs. VS (npn) IS vs. VS 1.8 1.5 + V = +0.5V VS = V+ - V 1.6 VCM = 0V 1.4 125°C 25°C 1.2 125°C IS (mA) IBIAS (PA) - 25°C 1.0 -40°C 1.0 0.8 - 0.6 V = -0.5V -40°C + - VS = V - V 0.4 VCM = 0.5V 0.5 0 2 4 8 6 10 0.2 0 12 2 4 VS (V) 150 Figure 39. Figure 40. VOUT vs. VS VOUT vs. VS 600 VOLTAGE VOUT IS + RL = 1 k: to 25°C 200 VOUT (mV) VOUT (mV) MID-RAIL 0 125°C 50 RL = 150: to MID-RAIL 0 -40°C 400 VOLTAGE VOUT IS 125°C VOLTAGE VOUT IS - - ABOVE V SUPPLY 2 4 6 8 10 600 12 ABOVE V SUPPLY 2 4 6 8 10 12 VS (V) VS (V) Figure 41. Figure 42. VOUT vs. VS Closed Loop Output Impedance vs. Frequency AV = +1 1000 20 V = +2.5V ABOVE V SUPPLY V = -2.5V RL = 150: to GND -40°C - OUTPUT IMPEDANCE (:) - V = 0V 25 + VOLTAGE VOUT IS - VOUT (mV) 25°C 200 100 150 12 BELOW V SUPPLY 400 50 -40°C 10 VOLTAGE VOUT IS + BELOW V SUPPLY 100 8 6 VS (V) 30 25°C 35 100 10 1 0.1 125°C 40 0 2 4 6 8 10 12 0.01 0.001 + Figure 43. 16 Submit Documentation Feedback 0.01 0.1 1 10 100 FREQUENCY (MHz) V (V) Figure 44. Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 LMH6618, LMH6619 www.ti.com SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 TYPICAL PERFORMANCE CHARACTERISTICS (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. PSRR vs. Frequency PSRR vs. Frequency 120 120 100 100 -PSRR -PSRR 80 PSRR (dB) PSRR (dB) 80 +PSRR 60 40 20 +PSRR 60 40 20 + V = +2.5V V = -2.5V 0 10 100 1k + V = +1.5V - - V = -1.5V 10k 100k 1M 0 10 10M 100M 100 1k 10k 100k 1M FREQUENCY (Hz) FREQUENCY (Hz) Figure 45. Figure 46. CMRR vs. Frequency Crosstalk Rejection vs. Frequency (Output to Output) 100 110 + + V = +2.5V - V = -2.5V CROSSTALK REJECTION (dB) V = +2.5V 100 V = -2.5V 90 CMRR (dB) 10M 100M 80 70 60 50 - VOUTCHA = 2 VPP 90 AVCHB = 2V/V 80 70 40 0.01 0.1 1 10 60 100k 100 1M 10M 100M FREQUENCY (MHz) FREQUENCY (Hz) Figure 47. Figure 48. Small Signal Step Response Small Signal Step Response 50 mV/DIV 50 mV/DIV 30 0.0001 0.001 + V = +2.5V + V = +1.5V - - V = -1.5V A = +1 V = -2.5V A = +1 VOUT = 0.2V VOUT = 0.2V RL = 1 k: RL = 1 k: 25 ns/DIV 25 ns/DIV Figure 49. Figure 50. Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 Submit Documentation Feedback 17 LMH6618, LMH6619 SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. Small Signal Step Response 50 mV/DIV 50 mV/DIV Small Signal Step Response + V = +5V + V = +2.5V - - V = -2.5V A = -1 VOUT = 0.2V VOUT = 0.2V RL = 1 k: RL = 1 k: 25 ns/DIV 25 ns/DIV Figure 51. Figure 52. Small Signal Step Response Small Signal Step Response + V = +1.5V 50 mV/DIV 50 mV/DIV V = -5V A = +1 + V = +5V - - 18 V = -1.5V A = -1 V = -5V A = -1 VOUT = 0.2V VOUT = 0.2V RL = 1 k: RL = 1 k: 25 ns/DIV 25 ns/DIV Figure 53. Figure 54. Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 LMH6618, LMH6619 www.ti.com SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 TYPICAL PERFORMANCE CHARACTERISTICS (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. Small Signal Step Response 50 mV/DIV 50 mV/DIV Small Signal Step Response + V = +2.5V - - V = -2.5V A = +2 V = -1.5V A = +2 VOUT = 0.2V VOUT = 0.2V RL = 150: RL = 150: 25 ns/DIV 25 ns/DIV Figure 55. Figure 56. Small Signal Step Response Large Signal Step Response 500 mV/DIV 50 mV/DIV + V = +1.5V + V = +5V - + V = +2.5V - V = -5V A = +2 V = -2.5V A = +1 VOUT = 0.2V VOUT = 2V RL = 150: RL = 1 k: 25 ns/DIV 50 ns/DIV Figure 57. Figure 58. Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 Submit Documentation Feedback 19 LMH6618, LMH6619 SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. Large Signal Step Response Overload Recovery Waveform 6 + VOUT V = +5V - V = -5V A = +5 2 2V/DIV 500 mV/DIV 4 + V = +2.5V - 0 V = -2.5V A = +2 -2 VOUT = 2V -4 VIN RL = 150: -6 50 ns/DIV 100 ns/DIV Figure 59. Figure 60. IS vs. VDISABLE 1600 125°C + V = +2.5V 1400 - V = -2.5V 25°C 1200 -40°C IS (PA) 1000 800 600 400 200 0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5 VDISABLE (V) Figure 61. 20 Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 LMH6618, LMH6619 www.ti.com SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 APPLICATION INFORMATION The LMH6618 and LMH6619 are based on TI’s proprietary VIP10 dielectrically isolated bipolar process. This device family architecture features the following: • Complimentary bipolar devices with exceptionally high ft (∼8 GHz) even under low supply voltage (2.7V) and low bias current. • Common emitter push-push output stage. This architecture allows the output to reach within millivolts of either supply rail. • Consistent performance from any supply voltage (2.7V - 11V) with little variation with supply voltage for the most important specifications (e.g. BW, SR, IOUT.) • Significant power saving compared to competitive devices on the market with similar performance. With 3V supplies and a common mode input voltage range that extends beyond either supply rail, the LMH6618 and LMH6619 are well suited to many low voltage/low power applications. Even with 3V supplies, the −3 dB BW (at AV = +1) is typically 120 MHz. The LMH6618 and LMH6619 are designed to avoid output phase reversal. With input over-drive, the output is kept near the supply rail (or as close to it as mandated by the closed loop gain setting and the input voltage). Figure 62 shows the input and output voltage when the input voltage significantly exceeds the supply voltages. 4 V + VIN 3 2 1 V/DIV 1 0 -1 VOUT -2 -3 - V -4 2 Ps/DIV Figure 62. Input and Output Shown with CMVR Exceeded If the input voltage range is exceeded by more than a diode drop beyond either rail, the internal ESD protection diodes will start to conduct. The current flow in these ESD diodes should be externally limited. The LMH6618 can be shutdown by connecting the DISABLE pin to a voltage 0.5V below the supply midpoint which will reduce the supply current to typically less than 100 µA. The DISABLE pin is “active low” and should be connected through a resistor to V+ for normal operation. Shutdown is guaranteed when the DISABLE pin is 0.5V below the supply midpoint at any operating supply voltage and temperature. In the shutdown mode, essentially all internal device biasing is turned off in order to minimize supply current flow and the output goes into high impedance mode. During shutdown, the input stage has an equivalent circuit as shown in Figure 63. Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 Submit Documentation Feedback 21 LMH6618, LMH6619 SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 www.ti.com RS 50: INVERTING INPUT D4 D1 D3 D2 NON-INVERTING INPUT Figure 63. Input Equivalent Circuit During Shutdown When the LMH6618 is shutdown, there may be current flow through the internal diodes shown, caused by input potential, if present. This current may flow through the external feedback resistor and result in an apparent output signal. In most shutdown applications the presence of this output is inconsequential. However, if the output is “forced” by another device, the other device will need to conduct the current described in order to maintain the output potential. To keep the output at or near ground during shutdown when there is no other device to hold the output low, a switch using a transistor can be used to shunt the output to ground. SINGLE CHANNEL ADC DRIVER The low noise and wide bandwidth make the LMH6618 an excellent choice for driving a 12-bit ADC. Figure 64 shows the schematic of the LMH6618 driving an ADC121S101. The ADC121S101 is a single channel 12-bit ADC. The LMH6618 is set up in a 2nd order multiple-feedback configuration with a gain of −1. The −3 dB point is at 500 kHz and the −0.01 dB point is at 100 kHz. The 22Ω resistor and 390 pF capacitor form an antialiasing filter for the ADC121S101. The capacitor also stores and delivers charge to the switched capacitor input of the ADC. The capacitive load on the LMH6618 created by the 390 pF capacitor is decreased by the 22Ω resistor. Table 1 shows the performance data of the LMH6618 and the ADC121S101. IN 1 PF 549: 549: 150 pF 1.24 k: + V + + V 1 nF V 5V 1 PF 0.1 PF 0.01 PF 14.3 k: 0.1 PF 10 PF C13 C11 - C5 ADC121S101 + 5.6 PF 10 PF C6 22: LMH6618 GND 0.1 PF 390 pF 0.1 PF 14.3 k: Figure 64. LMH6618 Driving an ADC121S101 22 Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 LMH6618, LMH6619 www.ti.com SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 Table 1. Performance Data for the LMH6618 Driving an ADC121S101 Parameter Measured Value Signal Frequency 100 kHz Signal Amplitude 4.5V SINAD 71.5 dB SNR 71.87 dB THD −82.4 dB SFDR 90.97 dB ENOB 11.6 bits When the op amp and the ADC are using the same supply, it is important that both devices are well bypassed. A 0.1 µF ceramic capacitor and a 10 µF tantalum capacitor should be located as close as possible to each supply pin. A sample layout is shown in Figure 65. The 0.1 µF capacitors (C13 and C6) and the 10 µF capacitors (C11 and C5) are located very close to the supply pins of the LMH6618 and the ADC121S101. Figure 65. LMH6618 and ADC121S101 Layout SINGLE TO DIFFERENTIAL ADC DRIVER Figure 66 shows the LMH6619 used to drive a differential ADC with a single-ended input. The ADC121S625 is a fully differential 12-bit ADC. Table 2 shows the performance data of the LMH6619 and the ADC121S625. Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 Submit Documentation Feedback 23 LMH6618, LMH6619 SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 www.ti.com + V V 560: 10 PF + 0.1 PF 10 PF - 33: + V LMH6619 + INPUT 220 pF 0.1 PF 560: 560: 10 PF 560: + V 560: - ADC121S625 33: LMH6619 + 220 pF 560: Figure 66. LMH6619 Driving an ADC121S625 Table 2. Performance Data for the LMH6619 Driving an ADC121S625 Parameter Measured Value Signal Frequency 10 kHz Signal Amplitude 2.5V SINAD 67.9 dB SNR 68.29 dB THD −78.6 dB SFDR 75.0 dB ENOB 11.0 bits DIFFERENTIAL ADC DRIVER The circuit in Figure 64 can be used to drive both inputs of a differential ADC. Figure 67 shows the LMH6619 driving an ADC121S705. The ADC121S705 is a fully differential 12-bit ADC. Performance with this circuit is similar to the circuit in Figure 64. 24 Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 LMH6618, LMH6619 www.ti.com SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 1 PF 549: 549: +IN 150 pF 1.24 k: + V V 1 nF + 0.1 PF 10 PF + V 14.3 k: - 22: LMH6619 0.1 PF + 10 PF 390 pF 0.1 PF 5.6 PF 14.3 k: ADC121S705 1 PF 549: 549: 22: -IN 390 pF 150 pF 1.24 k: + V V 1 nF + 0.1 PF 14.3 k: 10 PF LMH6619 + 0.1 PF 5.6 PF 14.3 k: Figure 67. LMH6619 Driving an ADC121S705 DC LEVEL SHIFTING Often a signal must be both amplified and level shifted while using a single supply for the op amp. The circuit in Figure 68 can do both of these tasks. The procedure for specifying the resistor values is as follows. 1. Determine the input voltage. 2. Calculate the input voltage midpoint, VINMID = VINMIN + (VINMAX – VINMIN)/2. 3. Determine the output voltage needed. 4. Calculate the output voltage midpoint, VOUTMID = VOUTMIN + (VOUTMAX – VOUTMIN)/2. 5. Calculate the gain needed, gain = (VOUTMAX – VOUTMIN)/(VINMAX – VINMIN) 6. Calculate the amount the voltage needs to be shifted from input to output, ΔVOUT = VOUTMID – gain x VINMID. 7. Set the supply voltage to be used. 8. Calculate the noise gain, noise gain = gain + ΔVOUT/VS. 9. Set RF. 10. Calculate R1, R1 = RF/gain. 11. Calculate R2, R2 = RF/(noise gain-gain). 12. Calculate RG, RG= RF/(noise gain – 1). Check that both the VIN and VOUT are within the voltage ranges of the LMH6618. The following example is for a VIN of 0V to 1V with a VOUT of 2V to 4V. 1. VIN = 0V to 1V 2. VINMID = 0V + (1V – 0V)/2 = 0.5V 3. VOUT = 2V to 4V Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 Submit Documentation Feedback 25 LMH6618, LMH6619 SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 www.ti.com 4. VOUTMID = 2V + (4V – 2V)/2 = 3V 5. Gain = (4V – 2V)/(1V – 0V) = 2 6. ΔVOUT = 3V – 2 x 0.5V = 2 7. For the example the supply voltage will be +5V. 8. Noise gain = 2 + 2/5V = 2.4 9. RF = 2 kΩ 10. R1 = 2 kΩ/2 = 1 kΩ 11. R2 = 2 kΩ/(2.4-2) = 5 kΩ 12. RG = 2 kΩ/(2.4 – 1) = 1.43 kΩ V + + V R2 R1 VIN + VOUT LMH6618 - RG RF Figure 68. DC Level Shifting 4th ORDER MULTIPLE FEEDBACK LOW-PASS FILTER Figure 69 shows the LMH6619 used as the amplifier in a multiple feedback low pass filter. This filter is set up to have a gain of +1 and a −3 dB point of 1 MHz. Values can be determined by using the WEBENCH® Active Filter Designer found at webench.ti.com. 1.05 k: 1.02 k: 150 pF 62 pF + V + V 0.1 PF 1.05 k: 1 PF 523: 0.1 PF - INPUT 330 pF 1.02 k: LMH6619 - + LMH6619 820 pF 0.1 PF 1 PF 510: OUTPUT + 1 PF 0.1 PF 1 PF - V - V Figure 69. 4th Order Multiple Feedback Low-Pass Filter CURRENT SENSE AMPLIFIER With it’s rail-to-rail input and output capability, low VOS, and low IB the LMH6618 is an ideal choice for a current sense amplifier application. Figure 70 shows the schematic of the LMH6618 set up in a low-side sense configuration which provides a conversion gain of 2V/A. Voltage error due to VOS can be calculated to be VOS x (1 + RF/RG) or 0.75 mV x 20.6 = 15.5 mV. Voltage error due to IO is IO x RF or 0.26 µA x 1 kΩ = 0.26 mV. Hence total voltage error is 15.5 mV + 0.26 mV or 15.7 mV which translates into a current error of 15.7 mV/(2 V/A) = 7.9 mA. 26 Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 LMH6618, LMH6619 www.ti.com SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 +5V 0A to 1A 51: + 1 k: 0.1: LMH6618 51: 1 k: Figure 70. Current Sense Amplifier TRANSIMPEDANCE AMPLIFIER By definition, a photodiode produces either a current or voltage output from exposure to a light source. A Transimpedance Amplifier (TIA) is utilized to convert this low-level current to a usable voltage signal. The TIA often will need to be compensated to insure proper operation. CF RF VS LMH6618 CPD CIN + Figure 71. Photodiode Modeled with Capacitance Elements Figure 71 shows the LMH6618 modeled with photodiode and the internal op amp capacitances. The LMH6618 allows circuit operation of a low intensity light due to its low input bias current by using larger values of gain (RF). The total capacitance (CT) on the inverting terminal of the op amp includes the photodiode capacitance (CPD) and the input capacitance of the op amp (CIN). This total capacitance (CT) plays an important role in the stability of the circuit. The noise gain of this circuit determines the stability and is defined by: NG = 1 + sRF (CT + CF) 1 + sCFRF (1) 1 1 Where, fZ # and fP = 2SRFCF 2SRFCT (2) Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 Submit Documentation Feedback 27 LMH6618, LMH6619 SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 www.ti.com OP AMP OPEN LOOP GAIN I-V GAIN (:) GAIN (dB) NOISE GAIN (NG) 1 + sRF (CT + CF) 1 + sRFCF 1+ CIN CF 0 dB FREQUENCY fz # 1 2SRFCT fP = 1 GBWP 2SRFCF Figure 72. Bode Plot of Noise Gain Intersecting with Op Amp Open-Loop Gain Figure 72 shows the bode plot of the noise gain intersecting the op amp open loop gain. With larger values of gain, CT and RF create a zero in the transfer function. At higher frequencies the circuit can become unstable due to excess phase shift around the loop. A pole at fP in the noise gain function is created by placing a feedback capacitor (CF) across RF. The noise gain slope is flattened by choosing an appropriate value of CF for optimum performance. Theoretical expressions for calculating the optimum value of CF and the expected −3 dB bandwidth are: CF = CT 2SRF(GBWP) (3) GBWP f-3 dB = 2SR C F T (4) Equation 4 indicates that the −3 dB bandwidth of the TIA is inversely proportional to the feedback resistor. Therefore, if the bandwidth is important then the best approach would be to have a moderate transimpedance gain stage followed by a broadband voltage gain stage. Table 3 shows the measurement results of the LMH6618 with different photodiodes having various capacitances (CPD) and a feedback resistance (RF) of 1 kΩ. Table 3. TIA (Figure 1) Compensation and Performance Results 28 CPD CT f −3 dB CAL f −3 dB MEAS Peaking (pF) (pF) (pF) (pF) (MHz) (MHz) (dB) 22 24 7.7 5.6 23.7 20 0.9 47 49 10.9 10 16.6 15.2 0.8 100 102 15.8 15 11.5 10.8 0.9 222 224 23.4 18 7.81 8 2.9 Submit Documentation Feedback CF CAL CF USED Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 LMH6618, LMH6619 www.ti.com SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 Figure 73 shows the frequency response for the various photodiodes in Table 3. 6 NORMALIZED I-V GAIN (dB) 3 0 CPD = 22 pF, -3 CF = 10 pF -6 -9 -12 CF = 5.6 pF CPD = 47 pF, CPD = 100 pF, CF = 15 pF -15 CPD = 222 pF, CF = 18 pF -18 100k 1M 10M 100M 1G FREQUENCY (Hz) Figure 73. Frequency Response for Various Photodiode and Feedback Capacitors When analyzing the noise at the output of the TIA, it is important to note that the various noise sources (i.e. op amp noise voltage, feedback resistor thermal noise, input noise current, photodiode noise current) do not all operate over the same frequency band. Therefore, when the noise at the output is calculated, this should be taken into account. The op amp noise voltage will be gained up in the region between the noise gain’s zero and pole (fZ and fP in Figure 72). The higher the values of RF and CT, the sooner the noise gain peaking starts and therefore its contribution to the total output noise will be larger. It is obvious to note that it is advantageous to minimize CIN by proper choice of op amp or by applying a reverse bias across the diode at the expense of excess dark current and noise. DIFFERENTIAL CABLE DRIVER FOR NTSC VIDEO The LMH6618 and LMH6619 can be used to drive an NTSC video signal on a twisted-pair cable. Figure 74 shows the schematic of a differential cable driver for NTSC video. This circuit can be used to transmit the signal from a camera over a twisted pair to a monitor or display located a distance. C1 and C2 are used to AC couple the video signal into the LMH6619. The two amplifiers of the LMH6619 are set to a gain of 2 to compensate for the 75Ω back termination resistors on the outputs. The LMH6618 is set to a gain of 1. Because of the DC bias the output of the LMH6618 is AC coupled. Most monitors and displays will accept AC coupled inputs. Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 Submit Documentation Feedback 29 LMH6618, LMH6619 SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012 www.ti.com +10V C5 0.1 PF +10V C2 47 PF J1 8 3 VIDEO INPUT GND + 2 C8 0.1 PF U1A + V LMH6619 R5 10 k: 1 VOUT - R16 3.01 k: R10 75: C7 47 PF R9 3.01 k: GND +10V GND GND R4 10 k: + C6 10 PF R13 3.01 k: 4 TWISTED-PAIR R1 75: C1 47 PF + GND R7 3.01 k: R8 3 k: C3 20 PF GND R3 1.50 k: R14 3.01 k: 3 5 - + V LMH6618 + V 2 GND U2 1 C10 47 PF J2 VIDEO OUTPUT GND 6 5 R2 3.3 k: R12 150: GND + C9 10 PF U1B LMH6619 V 4 + C4 0.1 PF 7 R15 3.01 k: GND R11 75: VOUT GND GND +10V R6 10 k: GND GND Figure 74. Differential Cable Driver 30 Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LMH6618 LMH6619 PACKAGE OPTION ADDENDUM www.ti.com 11-Apr-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) (4) LMH6618MK/NOPB ACTIVE SOT DDC 6 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 AE4A LMH6618MKE/NOPB ACTIVE SOT DDC 6 250 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 AE4A LMH6618MKX/NOPB ACTIVE SOT DDC 6 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 AE4A LMH6619MA/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 LMH66 19MA LMH6619MAE/NOPB ACTIVE SOIC D 8 250 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 LMH66 19MA LMH6619MAX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 LMH66 19MA (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 11-Apr-2013 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. OTHER QUALIFIED VERSIONS OF LMH6619 : • Automotive: LMH6619-Q1 NOTE: Qualified Version Definitions: • Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 21-Mar-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing LMH6618MK/NOPB SOT DDC 6 LMH6618MKE/NOPB SOT DDC LMH6618MKX/NOPB SOT DDC LMH6619MAE/NOPB SOIC LMH6619MAX/NOPB SOIC SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 6 250 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 6 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 D 8 250 178.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 21-Mar-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LMH6618MK/NOPB SOT DDC 6 1000 210.0 185.0 35.0 LMH6618MKE/NOPB SOT DDC 6 250 210.0 185.0 35.0 LMH6618MKX/NOPB SOT DDC 6 3000 210.0 185.0 35.0 LMH6619MAE/NOPB SOIC D 8 250 210.0 185.0 35.0 LMH6619MAX/NOPB SOIC D 8 2500 367.0 367.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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