DMN10H170SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features V(BR)DSS RDS(ON) Max 100V 140mΩ @ VGS = 10V 160mΩ @ VGS = 4.5V ID TC = +25°C 12A 11A Low On-Resistance Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Case: TO252 (DPAK) Case Material: Molded Plastic, “Green” Molding Compound. ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Applications DC-DC Converters Power Management Functions Analog Switch Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) TO252 (DPAK) D D G Top View S Top View Pin Out Internal Schematic Ordering Information (Note 4) Part Number DMN10H170SK3-13 Notes: Case TO252 (DPAK) Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information N170SK YYWW DMN10H170SK3 Document number: DS35734 Rev. 6 - 2 =Manufacturer’s Marking N170SK= Product Type Marking Code YYWW = Date Code Marking YY= Last Digit of Year (ex: 15 = 2015) WW= Week Code (01 to 53) 1 of 7 www.diodes.com September 2015 © Diodes Incorporated DMN10H170SK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT Continuous Drain Current (Note 5) VGS = 10V TC = +25°C TC = +100°C Steady State Value 100 ±20 12 7.5 4 16 5.3 20 ID Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current (Note 6) Avalanche Energy (Note 6) IS IDM IAS EAS Units V V A A A A mJ Thermal Characteristics Characteristic Symbol TC = +25°C TC = +100°C Total Power Dissipation (Note 5) PD Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Value 42 17 44 3 -55 to +150 Units W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 1 100 V µA nA VGS = 0V, ID = 250µA VDS = 100V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS(ON) VSD 2.0 99 104 0.7 3.0 140 160 1.0 V Static Drain-Source On-Resistance 1.0 V VDS = VGS, ID = 250µA VGS = 10V, ID = 5A VGS = 4.5V, ID = 5A VGS = 0V, IS = 10A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr 1,167 36 25 1.3 4.9 9.7 2.0 2.0 10.5 11.1 42.6 12.8 30.3 35.2 pF VDS = 25V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 80V, ID = 12.8A nS VDD = 50V, RG = 25Ω, ID = 12.8A nS nC VGS = 0V, IS = 12.8A, dI/dt = 100A/μs VGS = 0V, IS = 12.8A, dI/dt = 100A/μs Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ Test Condition 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper pad layout. 6. UIS in production with L = 1.43mH, TJ = +25°C. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design; not subject to production testing. DMN10H170SK3 Document number: DS35734 Rev. 6 - 2 2 of 7 www.diodes.com September 2015 © Diodes Incorporated DMN10H170SK3 10 10 VDS = 5.0V 8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 6 4 2 6 T A = 150°C 4 TA = 125°C TA = 85°C 2 TA = 25°C TA = -55°C 0 0.5 1.0 1.5 V DS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.20 0.18 VGS = 1.8V 0.16 0.14 VGS = 2.5V 0.12 VGS = 4.5V 0.10 0.08 0.06 0.04 0.02 0 1 2 3 4 5 6 7 8 ID, DRAIN-SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 9 2.6 2.2 VGS = 10V ID = 10A 2.0 1.8 1.6 VGS = 5V ID = 5A 1.4 1.2 1.0 0.8 0.6 0.4 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMN10H170SK3 Document number: DS35734 Rev. 6 - 2 1 2 3 4 VGS, GATE-SOURCE VOLTAGE Fig.2 Typical Transfer Characteristics VGS= 4.5V 0.35 0.30 T A = 150°C 0.25 TA = 125°C 0.20 T A = 85°C 0.15 TA = 25°C 0.10 TA = -55°C 0.05 0 0 3 of 7 www.diodes.com 5 0.40 10 2.8 2.4 0 2.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 8 2 4 6 8 ID, DRAIN CURRENT Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 10 0.30 VGS = 10V ID = 10A 0.25 0.20 VGS = 5V ID = 10A 0.15 0.10 0.05 0 - 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 6 On-Resistance Variation with Temperature September 2015 © Diodes Incorporated DMN10H170SK3 9 2.0 IS, SOURCE CURRENT (V) V GS(th), GATE THRESHOLD VOLTAGE (V) 10 2.5 ID = 250µA 1.5 1.0 8 7 6 5 TA = 25°C 4 3 2 0.5 1 0 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 10,000 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig.8 Diode Forward Voltage vs. Current 1.2 10000 1,000 CT , JUNCTION CAPACITANCE (pF) IDSS, DRAIN LEAKAGE CURRENT (nA) f=1MHz TA = 150°C TA = 125°C 100 TA = 85°C 10 TA = 25°C C iss 1000 100 Coss TA = -55°C 1 0 Crss 10 20 30 40 50 60 70 80 90 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Drain-Source Leakage Current vs. Voltage 10 0 10 20 30 40 50 60 70 80 90 100 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 100 10 RDS(on) Limited PW = 10µs PW = 1µs 8 ID , DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) NEW PRODUCT 3.0 VDS = 80V ID = 12.8A 6 4 10 PW = 1s PW = 100ms PW = 1ms PW = 100µs 0.1 2 0 0 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate Charge DMN10H170SK3 Document number: DS35734 Rev. 6 - 2 10 PW = 10ms 1 0.01 0.1 4 of 7 www.diodes.com TJ(m ax) = 150°C TA = 25°C V GS = 10V Single Pulse DUT on infinite heatsink 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 1000 September 2015 © Diodes Incorporated DMN10H170SK3 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 R JC (t) = r(t) * RJC R JC = 3.05°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.000001 0.00001 DMN10H170SK3 Document number: DS35734 Rev. 6 - 2 0.0001 0.001 0.01 0.1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 1 10 September 2015 © Diodes Incorporated DMN10H170SK3 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. TO252 (DPAK) NEW PRODUCT E A b3 7°±1° c L3 D A2 L4 e TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L A1 2.74REF Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. TO252 (DPAK) X1 Dimensions C X X1 Y Y1 Y2 Y1 Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y2 C Y X DMN10H170SK3 Document number: DS35734 Rev. 6 - 2 6 of 7 www.diodes.com September 2015 © Diodes Incorporated DMN10H170SK3 IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMN10H170SK3 Document number: DS35734 Rev. 6 - 2 7 of 7 www.diodes.com September 2015 © Diodes Incorporated