Vishay BU10085S-E3/45 Bridge rectifier Datasheet

BU1006-E3, BU1008-E3, BU1010-E3
www.vishay.com
Vishay General Semiconductor
Enhanced isoCink+™ Bridge Rectifiers
FEATURES
isoCink+™
• UL recognition file number E309391 (QQQX2)
UL 1557 (see *)
• Thin single in-line package
+
~
~
-
~
~
+
Case Style BU
• Available for BU-5S lead forming option
(part number with “5S” suffix, e.g. BU10065S)
• Superior thermal conductivity
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
+
~
~
-
* Tested to UL standard for safety electrically isolated
semiconductor devices. UL 1557 4th edition.
Dielectric tested to maximum case, storage and junction
temperature to 150 °C to withstand 1500 V.
Epoxy meets UL 94 V-0 flammability rating.
BU
IF(AV)
10 A
VRRM
600 V, 800 V, 1000 V
IFSM
120 A
IR
5 µA
VF at IF = 5.0 A
0.88 V
TJ max.
150 °C
Diode variations
In-Line
MECHANICAL DATA
Case: BU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS
Package
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances and
white-goods applications.
per
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.


MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Average rectified forward current (Fig. 1, 2)
Non-repetitive peak forward surge current
8.3 ms single sine-wave, TJ = 25 °C
Rating for fusing (t < 8.3 ms) TJ = 25 °C
Operating junction and storage temperature range
TC = 92 °C (1)
TA = 25 °C (2)
SYMBOL
BU1006
BU1008
BU1010
UNIT
VRRM
600
800
1000
V
IO
10
3.2
A
IFSM
120
A
I2t
60
A2s
TJ, TSTG
- 55 to + 150
°C
Notes
(1) With 60 W air cooled heatsink
(2) Without heatsink, free air
Revision: 16-Aug-13
Document Number: 84801
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BU1006-E3, BU1008-E3, BU1010-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA = 25 °C
Maximum instantaneous forward
voltage per diode (1)
IF = 5.0 A
Maximum reverse current per diode
rated VR
Typical junction capacitance per diode
4.0 V, 1 MHz
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF
IR
CJ
TYP.
MAX.
0.98
1.05
0.88
0.95
-
5.0
64
250
43
-
UNIT
V
μA
pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
BU1006
BU1008
RJC (1)
3.0
RJA (2)
20
BU1010
UNIT
°C/W
Notes
With 60 W air cooled heatsink
(2) Without heatsink, free air
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
BU1006-E3/45
4.55
45
20
Tube
BU1006-E3/51
4.55
51
250
Paper tray
BU10065S-E3/45
4.55
45
20
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified)
4
Average Forward Rectified Current (A)
Average Forward Output Current (A)
12
10
With Heatsink
Sine-Wave, R-Load
TC Measured at Device Bottom
8
6
TC
TC
4
2
0
3
2
Without Heatsink
Sine-Wave, R-Load
Free Air, TA
1
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
Case Temperature (°C)
Ambient Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 2 - Forward Current Derating Curve
Revision: 16-Aug-13
150
Document Number: 84801
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BU1006-E3, BU1008-E3, BU1010-E3
www.vishay.com
Vishay General Semiconductor
1000
Instantaneous Reverse Current (µA)
Forward Power Dissipation (W)
24
20
16
12
8
4
0
0
1
2
3
4
5
6
7
8
9
10
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0.01
11
10
20
30
40
50
60
70
80
90
100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Forward Power Dissipation
Fig. 5 - Typical Reverse Characteristics Per Diode
100
100
TJ = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
TJ = 150 °C
100
10
TJ = 125 °C
1
TJ = 25 °C
0.1
0.01
0.3
10
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Forward Characteristics Per Diode
Revision: 16-Aug-13
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance Per Diode
Document Number: 84801
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BU1006-E3, BU1008-E3, BU1010-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type BU
0.161 (4.10)
0.142 (3.60)
0.880 (22.3)
0.860 (21.8)
View A
0.020R (TYP.)
0.125 (3.2) x 45°
Chamfer
0.080 (2.03)
0.060 (1.52)
0.310 (7.9)
0.290 (7.4)
0.160 (4.1)
0.140 (3.5)
0.740 (18.8)
0.720 (18.3)
0.075
(1.9) R
+
9°
TYP.
~
~
0.085 (2.16)
0.065 (1.65)
-
5°
TYP.
0.048 (1.23)
0.039 (1.00)
0.710 (18.0)
0.690 (17.5)
0.050 (1.27)
0.040 (1.02)
0.100 (2.54)
0.085 (2.16)
0.190 (4.83)
0.210 (5.33)
0.028 (0.72)
0.020 (0.52)
0.080 (2.03)
0.065 (1.65)
Polarity shown on front side of case, positive lead beveled corner
0.055 (1.385) REF.
0.094 (2.39) x 45° REF.
R 0.11
(2.78) REF.
0.64 (16.28) REF.
0.62 (15.78) REF.
R 0.10
(2.60) REF.
0.055 (1.385) REF.
Revision: 16-Aug-13
Document Number: 84801
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BU1006-E3, BU1008-E3, BU1010-E3
www.vishay.com
Vishay General Semiconductor
FORMING SPECIFICATION: BU-5S in inches (millimeters)
0.161 (4.10)
0.142 (3.60)
0.880 (22.3)
0.860 (21.8)
0.125 (3.2) x 45°
Chamfer
0.160 (4.1)
0.140 (3.5)
+
0.050 (1.27)
0.040 (1.02)
0.213 (5.40)
0.173 (4.40)
0.417 (10.60)
0.370 (9.40)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.075
(1.9) R
0.080 (2.03)
0.060 (1.52)
9°
TYP.
0.020R (TYP.)
~ ~
-
0.085 (2.16)
0.065 (1.65)
0.100 (2.54)
0.085 (2.16)
5°
TYP.
0.219 (5.55)
MAX.
0.315 (8.0)
0.276 (7.0)
0.134 (3.40)
0.087 (2.20)
0.080 (2.03)
0.065 (1.65)
0.319 (8.10)
0.272 (6.90)
0.319 (8.10)
0.272 (6.90)
0.028 (0.72)
0.020 (0.52)
APPLICATION NOTE
(1) Device UL approved for safety use dielectric strength of 1500 V.
(2) If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement.
(3) Heat sink shape recommendation:
(3)
2.5 mm MIN.
Heatsink
2.5 mm MIN.
By Safety Requirements
Revision: 16-Aug-13
Document Number: 84801
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
1
Document Number: 91000