JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
MPSA56
TRANSISTOR (PNP)
1.EMITTER
FEATURES
z General Purpose Switching and Amplification.
2.BASE
3.COLLECTOR
0
Equivalent Circuit
M PS
2
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1000pcs/Bag
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Tape
2000pcs/Box
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" #
#$%& Collector-Base Voltage
-80
V
#$'& Collector-Emitter Voltage
-80
V
#'%& Emitter-Base Voltage
-4
V
$ Collector Current -Continuous
-0.5
A
"( Collector Power Dissipation
625
mW
Thermal Resistance I rom Junction
Wo Ambient
200
Junction Temperature
1
/W
ș +
)
*
www.cj-elec.com
-55 a
St orage Temperature
1
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Ta =25 unless otherwise specified
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -0.1mA,IE=0
-80
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-80
V
Emitter-base breakdown voltage
-4
V(BR)EBO
IE=-0.1mA,IC=0
Collector cut-off current
ICBO
VCB=-80V,IE=0
-0.1
A
Collector cut-off current
ICEO
VCE=-60V,IB=0
-0.1
A
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.1
A
hFE(1)
VCE=-1V, IC=-10mA
100
hFE(2)
VCE=-1V, IC=-100mA
100
VCE(sat)
IC=-100mA,IB=-10mA
-0.25
V
Base-emitter voltage
VBE
IC=-100mA, VCE=-1V
-1.2
V
Transition frequency
fT
DC current gain
Collector-emitter saturation voltage
VCE=-1V,IC=-100mA,f=100MHz
www.cj-elec.com
50
V
MHz
'$XJ
Typical Characteristics
Static Characteristic
hFE
-100
COMMON
EMITTER
Ta=25ć
IB=-800uA
IB= -720uA
IB= -560uA
IB=-480uA
IB=-400uA
-60
IB= -320uA
-40
VCE=-1V
Ta=100 ć
IB=-640uA
-80
IC
——
500
DC CURRENT GAIN hFE
(mA)
-120
COLLECTOR CURRENT IC
-140
IB=-240uA
Ta=25 ć
100
IB=-160uA
-20
IB= -80uA
-0
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
COLLECTOR-EMITTER VOLTAGE
ȕ=10
-10
IC
—— VBE
T =2
5ć
a
-600
-900
BASE-EMMITER VOLTAGE
CAPACITANCE C (pF)
1000
Cob/ Cib
——
ȕ=10
-1
-10
fT
VBE
——
IC
IC
VCE= -1V
Ta=25 ć
-10
-3
(mV)
-100
COLLECTOR CURRENT
VCB/ VEB
Cib
Cob
10
f=1MHz
IE=0/IC=0
(mA)
10
PC
700
100
-500
-100
100
1
-1200
COLLECTOR POWER DISSIPATION
PC (mW)
COLLCETOR CURRENT IC
T =1
00 ć
a
VCE=-1V
-300
Ta=25ć
1000
-10
-0
IC
COLLECTOR CURRENT
-100
-1
——
(mA)
Ta=100ć
(mA)
(mA)
-500
IC
-500
-100
IC
-100
-10
-500
-100
TRANSITION FREQUENCY fT (MHz)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
Ta=100ć
COLLECTOR CURRENT
VCEsat
-1000
Ta=25ć
-1
-10
COLLECTOR CURRENT
IC
——
-1
(V)
-1000
-100
10
-3.5
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
VBEsat
-2000
VCE
-3.0
——
IC
(mA)
Ta
600
500
400
300
200
100
Ta=25 ć
1
-0.1
-1
REVERSE VOLTAGE
www.cj-elec.com
-10
V
0
-20
(V)
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
125
150
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A1
b
c
D
D1
E
e
e1
L
h
( ( -
7
7
3.300
3.700
0.130
0.146
1.100
1.400
0.043
0.055
0.380
0.550
0.015
0.022
0.360
0.510
0.014
0.020
4.
4.700
3.430
0.135
4.300
4.700
0.169
0.185
1.270 TYP
0.050 TYP
2.440
2.640
0.096
0.104
14.100
14.500
0.555
0.571
1.600
0.063
0.000
0.380
0.000
0.015
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