MCH3479 Ordering number : ENA1813 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH3479 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)1=49mΩ (typ.) 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg Unit 20 V 3.5 A PW≤10μs, duty cycle≤1% 14 A When mounted on ceramic substrate (900mm2×0.8mm) 0.9 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7019A-003 • Package : MCPH3 • JEITA, JEDEC : SC82, SC82A, SC88 • Minimum Packing Quantity : 3,000 pcs./reel 0.15 2.0 0.25 V ±12 Packing Type : TL Marking 1.6 0.25 1 0.65 2 FL LOT No. 0 t o 0.02 LOT No. TL 0.3 Electrical Connection 0.07 0.85 2.1 3 3 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 1 2 http://semicon.sanyo.com/en/network 81110PE TK IM TC-00002457 No. A1813-1/4 MCH3479 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings Conditions min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.5A 2.8 RDS(on)1 ID=1.5A, VGS=4.5V 49 64 mΩ RDS(on)2 ID=1A, VGS=2.5V 68 95 mΩ RDS(on)3 ID=0.5A, VGS=1.8V 99 149 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 260 pF Output Capacitance Coss VDS=10V, f=1MHz 65 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 50 pF Turn-ON Delay Time td(on) See specified Test Circuit. 6.2 ns Rise Time tr See specified Test Circuit. 19 ns Turn-OFF Delay Time See specified Test Circuit. 30 ns Fall Time td(off) tf See specified Test Circuit. 28 ns Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=3.5A 2.8 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4.5V, ID=3.5A 0.6 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4.5V, ID=3.5A 0.9 Diode Forward Voltage VSD IS=3.5A, VGS=0V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance 20 V 1 μA ±10 μA 0.4 1.3 V S nC 0.85 1.2 V Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=1.5A RL=6.7Ω VIN D PW=10μs D.C.≤1% VOUT G MCH3479 P.G 50Ω ID -- VDS V VDS=10V 4 1.5 1.5V 1.0 2 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT15111 0 25 0 °C VGS=1.2V 0.5 --25 °C 2.0 3 5°C 2.5 Ta= 7 Drain Current, ID -- A 8.0V 3.0 ID -- VGS 5 1.8 3.5 4.5V 2.5V 6.0V 4.0 Drain Current, ID -- A S 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate-to-Source Voltage, VGS -- V 1.8 2.0 IT15112 No. A1813-2/4 MCH3479 RDS(on) -- VGS 180 ID=0.5A 160 1.0A 140 1.5A 120 100 80 60 40 20 0 0 2 4 6 8 60 40 20 --20 0 20 40 60 80 100 120 140 160 IT15114 IS -- VSD VGS=0V 2 °C 25 5 3 3 2 C 7 --25 ° 1.0 1.0 7 5 0.1 7 5 25°C °C -25 =a °C T 75 5°C 2 Ta= 7 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 1.0A , I D= 2.5V = VGS 1.5A , I D= V 5 . 4 = VGS 80 7 5 3 3 2 2 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 0.01 5 0.4 0.6 0.8 1.0 1.2 IT15116 Ciss, Coss, Crss -- VDS 1000 f=1MHz 7 5 td(off) Ciss, Coss, Crss -- pF 3 tf 2 tr 10 7 td(on) 5 3 Ciss 2 100 Coss 7 5 Crss 3 2 3 0.1 2 3 5 7 2 1.0 Drain Current, ID -- A VGS -- Qg 5 3 5 10 7 3 2 10 7 5 Drain Current, ID -- A 3 2 1 3 2 2 Total Gate Charge, Qg -- nC 4 3 IT15119 6 8 10 12 14 16 18 IDP=14A (PW≤10μs) ID=3.5A s ms 10 op 10 10 μs 0μ s 1m 10 DC 20 IT15118 ASO 0m s era 1.0 7 5 tio 3 2 n( Ta = 25 °C ) Operation in this area is limited by RDS(on). 0.1 7 5 3 2 1 2 Drain-to-Source Voltage, VDS -- V VDS=10V ID=3.5A 0 0 IT15117 4 0 0.2 Diode Forward Voltage, VSD -- V VDD=10V VGS=4.5V 5 0 IT15115 SW Time -- ID 7 Switching Time, SW Time -- ns 100 3 0.1 0.01 Gate-to-Source Voltage, VGS -- V A 0.5 , I D= 1.8V = VGS Ambient Temperature, Ta -- °C VDS=10V 5 120 IT15113 | yfs | -- ID 7 140 0 --60 --40 10 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta 160 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT15865 No. A1813-3/4 MCH3479 PD -- Ta Allowable Power Dissipation, PD -- W 1.0 When mounted on ceramic substrate (900mm2×0.8mm) 0.9 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15866 Note on usage : Since the MCH3479 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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