MA4E20xx Series
GaAs Beam Lead Schottky Diode
Rev. V5
Features
MA4E2037, MA4E2038
Low Series Resistance
Low Capacitance
High Cut-Off Frequency
Silicon Nitride Passivation
Multiple Configurations
Description and Applications
The MA4E2037 and MA4E2038 single diodes,
MA4E2039 anti-parallel pair and MA4E2040 series
tee are gallium arsenide beam lead Schottky barrier
diodes. These devices are fabricated on OMCVD
epitaxial wafers using a process designed for high
device uniformity and extremely low parasitics. The
high carrier mobility of gallium arsenide results in
lower series resistance than a silicon Schottky with
equivalent capacitance, resulting in lower noise
figure and conversion loss. The diodes are fully
passivated with silicon nitride and have an additional
layer of a polymer for scratch protection. The
protective coatings prevent damage to the junction
and the anode air bridge during handling.
MA4E2039
The high cut-off frequency of these diodes allows
use through millimeter wave frequencies. Typical
applications include single and double balanced
mixers in PCN transceivers and radios, automotive
radar systems and police radar detectors.
The MA4E2039 anti-parallel pair is designed for use
in sub harmonically pumped mixers. Close matching
of the diode characteristics in high LO suppression
at the RF input.
MA4E2040
Ordering Information
Part Number
Package
MA4E2037
Gel Pack (100 piece per)
MA4E2038
Gel Pack (100 piece per)
MA4E2039
Gel Pack (100 piece per)
MA4E2040
Gel Pack (100 piece per)
Notes: (Unless otherwise specified)
1. Dimensions are in mm (mils).
2. Views are with junction side up.
1
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MA4E20xx Series
GaAs Beam Lead Schottky Diode
Rev. V5
Electrical Specifications: TA = +25°C (measured as single diodes)
Parameter & Test Conditions
Units
Junction Capacitance @ 0 V, 1 MHz
MA4E2037
MA4E2038
Min.
Typ.
Max.
Min.
Typ.
Max.
pF
—
0.020
—
—
0.015
—
Total Capacitance @ 0 V, 1 MHz1
pF
0.030
0.045
0.060
—
0.035
0.045
Junction Capacitance Difference
pF
—
—
—
—
—
—
Series Resistance @ +10 mA2
Ω
—
4.0
7.0
—
6.5
10.0
Forward Voltage @ +1 mA
V
0.60
0.70
0.80
0.60
0.70
0.80
Forward Voltage Difference @ +1 mA
V
—
—
—
—
—
—
Reverse Voltage Breakdown @ -10 µA
V
4.5
7.0
—
4.5
7.0
—
Parameter & Test Conditions
Units
Junction Capacitance @ 0 V, 1 MHz3
MA4E2039
MA4E2040
Min.
Typ.
Max.
Min.
Typ.
Max.
pF
—
0.020
—
—
0.020
—
Total Capacitance @ 0 V, 1 MHz1,3
pF
0.030
0.045
0.060
0.030
0.045
0.060
Junction Capacitance Difference
pF
—
0.005
0.010
—
0.005
0.010
Series Resistance @ +10 mA2
Ω
—
4.0
7.0
—
4.0
7.0
Forward Voltage @ +1 mA
V
0.60
0.70
0.80
0.60
0.70
0.80
Forward Voltage Difference @ +1 mA
V
—
0.005
0.010
—
0.005
0.010
Reverse Voltage Breakdown @ -10 µA
V
—
—
—
—
—
—
1. Total capacitance is equivalent to the sum of junction capacitance CJ and parasitic capacitance CP.
2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms.
3. Capacitance for the MA4E2039 and MA4E2040 is per Schottky diode.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4E20xx Series
GaAs Beam Lead Schottky Diode
Rev. V5
Absolute Maximum Ratings4,5
Static Sensitivity
Parameter
Absolute Maximum
Incident Power (LO & RF)
20 dBm
Operating Temperature
-65°C to +125°C
Storage Temperature
-65°C to +150°C
Mounting Temperature
+235°C for 10 seconds
4. Exceeding any one or combination of these limits may cause
permanent damage to this device.
5. MACOM does not recommend sustained operation near these
survivability limits.
Forward Current vs. Temperature
Forward Current (mA)
100
80
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these HBM Class 0
devices.
Handling Procedures
The protective polymer coating on the active areas
of these die provides scratch protection, particularly
for the metal air bridge which contacts the anode.
Beam lead devices must, however, must be
handled with care since the leads may be easily
distorted or broken by the normal pressures
exerted when handled by tweezers. A vacuum
pencil with a # 27 tip is recommended for picking
and placing.
Mounting Techniques
+25°C
-40°C
+125°C
60
These devices are designed to be inserted onto
hard or soft substrates. Recommended methods of
attachment include thermo-compression bonding,
parallel- gap welding, solder reflow and conductive
epoxy.
See application note M541:
“Bonding and Handling Procedures for Chip Diode
Devices “ for detailed instructions.
40
20
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Forward Voltage (V)
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4E20xx Series
GaAs Beam Lead Schottky Diode
Rev. V5
M/A-COM Technology Solutions Inc. All rights reserved.
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4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support