Hittite HMC752LC4 Gaas hemt mmic low noise amplifier, 24 - 28 ghz Datasheet

HMC752LC4
v00.0409
LOW NOISE AMPLIFIERS - SMT
8
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 28 GHz
Typical Applications
Features
This HMC752LC4 is ideal for:
Noise Figure: 2.5 dB
• Point-to-Point Radios
Gain: 25 dB
• Point-to-Multi-Point Radios
P1dB Output Power: +13 dBm
• Military & Space
Supply Voltage: +3V @ 70 mA
• Test Instrumentation
Output IP3: +26 dBm
50 Ohm matched Input/Output
24 Lead Ceramic 4x4mm SMT Package: 16mm2
Functional Diagram
General Description
The HMC752LC4 is a GaAs MMIC Low Noise Wideband Amplifier housed in a leadless 4x4 mm ceramic
surface mount package. The amplifier operates between 24 and 28 GHz, providing up to 25 dB of small
signal gain, 2.5 dB noise figure, and output IP3 of
+26 dBm, while requiring only 70 mA from a +3V supply. The P1dB output power of up to +13 dBm enables
the LNA to function as a LO driver for balanced, I/Q
or image reject mixers. The HMC752LC4 also features
I/Os that are DC blocked and internally matched to
50 Ohms, making it ideal for high capacity microwave
radios or VSAT applications.
Electrical Specifi cations, TA = +25° C, Vdd = Vdd1= Vdd2 = +3V, Idd = Idd1 + Idd2 = 70 mA[2]
Parameter
Min.
Frequency Range
[1]
Typ.
Max.
24 - 28
GHz
25
dB
Gain Variation over Temperature
0.02
dB / °C
Noise Figure [1]
2.5
Input Return Loss
14
Output Return Loss
14
dB
Output Power for 1 dB Compression [1]
13
dBm
Saturated Output Power (Psat) [1]
16
dBm
Output Third Order Intercept (IP3)
26
dBm
Supply Current (Idd)
(Vdd = 3V, Vgg = Vgg1 = Vgg2 = Vgg3 = -0.3V Typ.)
70
mA
Gain
23
3
[1] Board loss subtracted out for gain, power and noise figure measurement
[2] Adjust Vgg = between -1 to 0.3V to achieve Idd = 70mA
8 - 360
Units
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
dB
dB
HMC752LC4
v00.0409
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 28 GHz
30
26
26
22
+25 C
+85 C
-40 C
14
22
70 mA
55 mA
18
14
10
10
20
22
24
26
28
30
20
22
FREQUENCY (GHz)
Input Return Loss vs. Temperature
28
30
0
+25 C
+85 C
-40 C
-5
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
26
Output Return Loss vs. Temperature
0
-10
-15
+25 C
+85 C
-40 C
-20
-10
-15
-20
-25
-25
-30
20
22
24
26
28
20
30
22
FREQUENCY (GHz)
24
26
28
30
28
30
FREQUENCY (GHz)
Noise Figure vs. Idd
Noise Figure vs. Temperature
6
6
+25 C
+85 C
-40 C
5
NOISE FIGURE (dB)
5
NOISE FIGURE (dB)
24
FREQUENCY (GHz)
LOW NOISE AMPLIFIERS - SMT
30
18
8
Gain vs. Idd
GAIN (dB)
GAIN (dB)
Gain vs. Temperature
4
3
2
1
70 mA
55 mA
4
3
2
1
0
0
20
22
24
26
FREQUENCY (GHz)
28
30
20
22
24
26
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 361
HMC752LC4
v00.0409
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 28 GHz
Output IP3 vs. Idd
32
32
30
30
28
28
IP3 (dBm)
IP3 (dBm)
Output IP3 vs. Temperature
26
24
+25 C
+85 C
-40 C
22
26
24
70 mA
55 mA
22
20
20
18
18
20
22
24
26
28
30
20
22
FREQUENCY (GHz)
16
16
14
14
P1dB (dBm)
18
12
+25 C
+85 C
-40 C
30
28
30
70 mA
55 mA
8
6
6
20
22
24
26
28
30
20
22
FREQUENCY (GHz)
26
Reverse Isolation vs. Temperature
0
18
-10
ISOLATION (dB)
20
16
14
+25 C
+85 C
-40 C
12
24
FREQUENCY (GHz)
Psat vs. Temperature
Psat (dBm)
28
12
10
8
+25 C
+85 C
-40 C
-20
-30
-40
-50
10
-60
8
-70
20
22
24
26
FREQUENCY (GHz)
8 - 362
26
P1dB vs. Idd
18
10
24
FREQUENCY (GHz)
P1dB vs. Temperature
P1dB (dBm)
LOW NOISE AMPLIFIERS - SMT
8
28
30
20
22
24
26
28
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
30
HMC752LC4
v00.0409
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 28 GHz
7
25
24
6
20
Pout
Gain
PAE
15
10
5
20
Gain
P1dB
5
16
4
12
3
8
2
4
0
-25
Noise Figure
0
0
-20
-15
-10
-5
INPUT POWER (dBm)
2.5
1
3
3.5
Vdd (V)
Absolute Maximum Ratings
Drain Bias Voltage
+4.5V
RF Input Power
-5 dBm
Gate Bias Voltage
-1 to 0.3V
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C)
(derate 6.7 mW/°C above 85 °C)
0.21 W
Thermal Resistance
(Channel to ground paddle)
148 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
LOW NOISE AMPLIFIERS - SMT
28
GAIN (dB), P1dB (dBm)
30
NOISE FIGURE (dB)
Pout (dBm), GAIN (dB), PAE (%)
8
Gain, Noise Figure & P1dB vs.
Supply Voltage @ 28 GHz
Power Compression @ 28 GHz
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 363
HMC752LC4
v00.0409
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 28 GHz
LOW NOISE AMPLIFIERS - SMT
8
8 - 364
Pin Descriptions
Pin Number
Function
Description
1, 2, 4, 6, 7, 12, 13,
15, 17 - 19, 24
GND
Package bottom has exposed metal paddle
that must be connected to RF/DC ground.
3
RFIN
This pad is AC coupled
and matched to 50 Ohms.
5, 11, 14, 22, 23
N/C
No Connection. This pin may be connected to RF/DC ground.
Performance will not be affected.
8 - 10
Vgg1 - 3
Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required
external components.
16
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
21, 20
Vdd1, Vdd2
Power Supply Voltage for the amplifier. See assembly for
required external components.
Interface Schematic
Application Circuit
Component
Value
C1 - C5
100 pF
C6 - C10
1,000 pF
C11 - C15
4.7 μF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC752LC4
v00.0409
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 28 GHz
8
LOW NOISE AMPLIFIERS - SMT
Evaluation PCB
List of Material for Evaluation PCB 123794 [1]
Item
J1, J2
Description
2.92mm PCB mount K-Connector
J3 - J9
DC Pin
C1 - C5
100pF Capacitor, 0402 Pkg.
C6 - C10
1,000pF Capacitor, 0603 Pkg.
C11 - C15
4.7 μF Capacitor, Tantalum
U1
HMC752LC4 Amplifier
PCB [2]
123792 Evaluation PCB [2]
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 365
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