HMC752LC4 v00.0409 LOW NOISE AMPLIFIERS - SMT 8 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz Typical Applications Features This HMC752LC4 is ideal for: Noise Figure: 2.5 dB • Point-to-Point Radios Gain: 25 dB • Point-to-Multi-Point Radios P1dB Output Power: +13 dBm • Military & Space Supply Voltage: +3V @ 70 mA • Test Instrumentation Output IP3: +26 dBm 50 Ohm matched Input/Output 24 Lead Ceramic 4x4mm SMT Package: 16mm2 Functional Diagram General Description The HMC752LC4 is a GaAs MMIC Low Noise Wideband Amplifier housed in a leadless 4x4 mm ceramic surface mount package. The amplifier operates between 24 and 28 GHz, providing up to 25 dB of small signal gain, 2.5 dB noise figure, and output IP3 of +26 dBm, while requiring only 70 mA from a +3V supply. The P1dB output power of up to +13 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC752LC4 also features I/Os that are DC blocked and internally matched to 50 Ohms, making it ideal for high capacity microwave radios or VSAT applications. Electrical Specifi cations, TA = +25° C, Vdd = Vdd1= Vdd2 = +3V, Idd = Idd1 + Idd2 = 70 mA[2] Parameter Min. Frequency Range [1] Typ. Max. 24 - 28 GHz 25 dB Gain Variation over Temperature 0.02 dB / °C Noise Figure [1] 2.5 Input Return Loss 14 Output Return Loss 14 dB Output Power for 1 dB Compression [1] 13 dBm Saturated Output Power (Psat) [1] 16 dBm Output Third Order Intercept (IP3) 26 dBm Supply Current (Idd) (Vdd = 3V, Vgg = Vgg1 = Vgg2 = Vgg3 = -0.3V Typ.) 70 mA Gain 23 3 [1] Board loss subtracted out for gain, power and noise figure measurement [2] Adjust Vgg = between -1 to 0.3V to achieve Idd = 70mA 8 - 360 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com dB dB HMC752LC4 v00.0409 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz 30 26 26 22 +25 C +85 C -40 C 14 22 70 mA 55 mA 18 14 10 10 20 22 24 26 28 30 20 22 FREQUENCY (GHz) Input Return Loss vs. Temperature 28 30 0 +25 C +85 C -40 C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 26 Output Return Loss vs. Temperature 0 -10 -15 +25 C +85 C -40 C -20 -10 -15 -20 -25 -25 -30 20 22 24 26 28 20 30 22 FREQUENCY (GHz) 24 26 28 30 28 30 FREQUENCY (GHz) Noise Figure vs. Idd Noise Figure vs. Temperature 6 6 +25 C +85 C -40 C 5 NOISE FIGURE (dB) 5 NOISE FIGURE (dB) 24 FREQUENCY (GHz) LOW NOISE AMPLIFIERS - SMT 30 18 8 Gain vs. Idd GAIN (dB) GAIN (dB) Gain vs. Temperature 4 3 2 1 70 mA 55 mA 4 3 2 1 0 0 20 22 24 26 FREQUENCY (GHz) 28 30 20 22 24 26 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 361 HMC752LC4 v00.0409 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz Output IP3 vs. Idd 32 32 30 30 28 28 IP3 (dBm) IP3 (dBm) Output IP3 vs. Temperature 26 24 +25 C +85 C -40 C 22 26 24 70 mA 55 mA 22 20 20 18 18 20 22 24 26 28 30 20 22 FREQUENCY (GHz) 16 16 14 14 P1dB (dBm) 18 12 +25 C +85 C -40 C 30 28 30 70 mA 55 mA 8 6 6 20 22 24 26 28 30 20 22 FREQUENCY (GHz) 26 Reverse Isolation vs. Temperature 0 18 -10 ISOLATION (dB) 20 16 14 +25 C +85 C -40 C 12 24 FREQUENCY (GHz) Psat vs. Temperature Psat (dBm) 28 12 10 8 +25 C +85 C -40 C -20 -30 -40 -50 10 -60 8 -70 20 22 24 26 FREQUENCY (GHz) 8 - 362 26 P1dB vs. Idd 18 10 24 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) LOW NOISE AMPLIFIERS - SMT 8 28 30 20 22 24 26 28 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 30 HMC752LC4 v00.0409 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz 7 25 24 6 20 Pout Gain PAE 15 10 5 20 Gain P1dB 5 16 4 12 3 8 2 4 0 -25 Noise Figure 0 0 -20 -15 -10 -5 INPUT POWER (dBm) 2.5 1 3 3.5 Vdd (V) Absolute Maximum Ratings Drain Bias Voltage +4.5V RF Input Power -5 dBm Gate Bias Voltage -1 to 0.3V Channel Temperature 175 °C Continuous Pdiss (T = 85 °C) (derate 6.7 mW/°C above 85 °C) 0.21 W Thermal Resistance (Channel to ground paddle) 148 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS LOW NOISE AMPLIFIERS - SMT 28 GAIN (dB), P1dB (dBm) 30 NOISE FIGURE (dB) Pout (dBm), GAIN (dB), PAE (%) 8 Gain, Noise Figure & P1dB vs. Supply Voltage @ 28 GHz Power Compression @ 28 GHz Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL. 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 363 HMC752LC4 v00.0409 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz LOW NOISE AMPLIFIERS - SMT 8 8 - 364 Pin Descriptions Pin Number Function Description 1, 2, 4, 6, 7, 12, 13, 15, 17 - 19, 24 GND Package bottom has exposed metal paddle that must be connected to RF/DC ground. 3 RFIN This pad is AC coupled and matched to 50 Ohms. 5, 11, 14, 22, 23 N/C No Connection. This pin may be connected to RF/DC ground. Performance will not be affected. 8 - 10 Vgg1 - 3 Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. 16 RFOUT This pad is AC coupled and matched to 50 Ohms. 21, 20 Vdd1, Vdd2 Power Supply Voltage for the amplifier. See assembly for required external components. Interface Schematic Application Circuit Component Value C1 - C5 100 pF C6 - C10 1,000 pF C11 - C15 4.7 μF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC752LC4 v00.0409 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz 8 LOW NOISE AMPLIFIERS - SMT Evaluation PCB List of Material for Evaluation PCB 123794 [1] Item J1, J2 Description 2.92mm PCB mount K-Connector J3 - J9 DC Pin C1 - C5 100pF Capacitor, 0402 Pkg. C6 - C10 1,000pF Capacitor, 0603 Pkg. C11 - C15 4.7 μF Capacitor, Tantalum U1 HMC752LC4 Amplifier PCB [2] 123792 Evaluation PCB [2] [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 365