Vishay BFQ67 Silicon npn planar rf transistor Datasheet

Not for new design, this product will be obsoleted soon
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
Silicon NPN Planar RF Transistor
1
SOT23
Features
•
•
•
•
•
Small feedback capacitance
Low noise figure
e3
High transition frequency
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
2
3
1
SOT23
3
2
Low noise small signal amplifiers up to 2 GHz. This
transistor has superior noise figure and associated
gain performance at UHF, VHF and microwave frequencies.
1
SOT323
2
Mechanical Data
3
19150
Electrostatic sensitive device.
Observe precautions for handling.
Typ: BFQ67
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Marking: V2
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFQ67R
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Marking: R67
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFQ67W
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Marking: WV2
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Unit
Collector-base voltage
Parameter
Test condition
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
2.5
V
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Document Number 85022
Rev. 1.6, 08-Sep-08
Tamb ≤ 60 °C
IC
50
mA
Ptot
200
mW
Tj
150
°C
Tstg
- 65 to + 150
°C
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1
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Junction ambient
1)
Test condition
Symbol
Value
Unit
RthJA
450
K/W
1)
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Max
Unit
VCE = 20 V, VBE = 0
ICES
100
μA
Collector-base cut-off current
VCB = 15 V, IE = 0
ICBO
100
nA
Emitter-base cut-off current
VEB = 1 V, IC = 0
IEBO
1
μA
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
V(BR)CEO
Collector-emitter saturation
voltage
IC = 50 mA, IB = 5 mA
Collector-emitter cut-off current
Test condition
DC forward current transfer ratio VCE = 5 V, IC = 15 mA
Symbol
Min
Typ.
10
VCEsat
V
0.1
0.4
hFE
65
100
150
Symbol
Min
Typ.
Max
V
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Unit
Transition frequency
VCE = 8 V, IC = 15 mA,
f = 500 MHz
fT
7.5
GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
0.4
pF
Collector-emitter capacitance
VCE = 8 V, f = 1 MHz
Cce
0.2
pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
0.85
pF
Noise figure
VCE = 8 V, ZS = ZSopt,
f = 800 MHz, IC = 5 mA
F
0.8
dB
VCE = 8 V, ZS = ZSopt,
f = 800 MHz, IC = 15 mA
F
1.5
dB
VCE = 8 V, ZS = 50 Ω, f = 2 GHz,
IC = 5 mA
F
2.5
dB
VCE = 8 V, ZS = 50 Ω, f = 2 GHz,
IC = 15 mA
F
3.0
dB
VCE = 8 V, ZS = 50 Ω, ZL = ZLopt,
IC = 15 mA, f = 800 MHz
Gpe
15.5
dB
VCE = 8 V, ZS = 50 Ω, ZL = ZLopt,
IC = 15 mA, f = 2 GHz
Gpe
8
dB
V1 = V2
160
mV
IP3
26
dBm
Power gain
Linear output voltage - two tone
intermodulation test
VCE = 8 V, IC = 15 mA,
dIM = 60 dB, f1 = 806 MHz,
f2 = 810 MHz, ZS = ZL = 50 Ω
Third order intercept point
VCE = 8 V, IC = 15 mA,
f = 800 MHz
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2
Document Number 85022
Rev. 1.6, 08-Sep-08
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
Common Emitter S-Parameters
Z0 = 50 Ω, Tamb = 25 °C, unless otherwise specified
VCE/V
IC/mA
f/MHz
S11
S21
LIN
MAG
ANG
ANG
5
5
5
2
100
0.894
-20.6
6.78
300
500
0.749
-56.2
0.610
-83.8
800
0.486
1000
1200
5
10
15
Document Number 85022
Rev. 1.6, 08-Sep-08
S22
LIN
MAG
ANG
LIN
MAG
ANG
163.0
0.027
77.1
0.967
-8.7
5.61
136.2
4.50
117.7
0.066
59.2
0.834
-20.8
0.086
50.0
0.716
-116.2
3.36
-25.9
98.8
0.102
46.3
0.623
-28.6
0.445
-132.4
0.419
-147.3
2.87
90.2
0.109
46.9
0.590
-30.1
2.50
81.9
0.115
48.7
0.568
1500
0.402
-31.8
-166.6
2.12
71.7
0.126
53.1
0.546
1800
-35.0
0.403
177.0
1.83
62.8
0.142
58.1
0.531
-38.8
2000
0.411
167.0
1.69
58.0
0.156
60.8
0.524
-41.9
2200
0.423
158.5
1.59
53.0
0.173
63.2
0.516
-45.1
2500
0.445
146.1
1.45
45.8
0.202
65.2
0.511
-51.7
2800
0.464
137.1
1.34
39.1
0.232
65.5
0.490
-59.1
3000
0.490
130.5
1.27
34.7
0.255
64.7
0.471
-64.8
100
0.760
-32.1
14.10
154.1
0.024
72.7
0.912
-15.2
300
0.522
-79.0
9.62
121.5
0.052
58.5
0.663
-27.9
500
0.390
-108.5
6.72
104.7
0.067
57.0
0.538
-28.1
800
0.311
-139.1
4.56
89.9
0.088
60.0
0.473
-26.3
1000
0.292
-153.5
3.77
83.1
0.103
62.1
0.459
-26.4
1200
0.282
-166.5
3.21
76.7
0.119
63.6
0.450
-27.4
1500
0.287
178.0
2.67
68.3
0.143
64.7
0.438
-30.4
1800
0.298
164.0
2.29
60.9
0.169
65.5
0.428
-34.2
2000
0.313
157.1
2.10
56.6
0.189
65.2
0.423
-37.1
2200
0.328
149.6
1.96
52.5
0.209
64.8
0.415
-40.2
2500
0.353
140.6
1.79
46.4
0.239
63.5
0.406
-46.8
2800
0.379
133.2
1.65
39.4
0.267
61.5
0.380
-53.8
3000
0.400
127.4
1.55
35.4
0.286
59.8
0.358
-58.9
100
0.594
-46.3
22.01
144.4
0.021
69.8
0.829
-21.7
300
0.346
-101.6
12.12
110.8
0.043
63.5
0.524
-29.9
500
0.264
-130.9
7.86
97.1
0.060
66.0
0.431
-25.7
deg
5
S12
LIN
MAG
deg
deg
deg
800
0.230
-158.2
5.13
85.1
0.088
69.0
0.399
-21.9
1000
0.224
-169.5
4.21
79.5
0.107
69.7
0.396
-21.8
1200
0.225
179.8
3.56
73.9
0.126
69.6
0.393
-23.3
1500
0.235
166.8
2.94
66.8
0.154
68.6
0.387
-26.6
1800
0.251
156.9
2.51
59.9
0.184
67.6
0.379
-30.7
2000
0.270
150.2
2.30
56.0
0.206
66.2
0.374
-33.7
2200
0.287
144.1
2.14
52.1
0.226
65.1
0.366
-36.9
2500
0.310
136.4
1.95
46.2
0.256
62.6
0.354
-43.6
2800
0.342
131.0
1.79
39.9
0.284
60.1
0.325
-50.5
3000
0.362
125.6
1.68
35.9
0.302
57.8
0.301
-55.3
100
0.477
-56.7
26.58
138.3
0.019
69.7
0.7681
-25.3
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3
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
VCE/V
IC/mA
f/MHz
S11
S21
LIN
MAG
ANG
300
0.276
500
800
ANG
-116.4
13.06
0.221
-144.4
0.208
-169.5
1000
0.206
1200
1500
5
8
www.vishay.com
4
20
30
2
S22
LIN
MAG
ANG
LIN
MAG
ANG
106.1
0.039
67.8
0.4623
-29.2
8.25
94.0
5.34
83.2
0.059
70.9
0.3912
-23.1
0.088
72.5
0.3733
-177.8
4.35
-19.1
78.0
0.109
72.3
0.3734
-19.4
0.208
172.5
0.221
162.5
3.68
72.8
0.129
71.6
0.3736
-21.1
3.03
65.9
0.159
69.9
0.3686
1800
0.237
-24.7
154.0
2.58
59.3
0.190
68.2
0.3619
2000
-29.0
0.257
147.5
2.37
55.7
0.212
66.7
0.3561
-32.1
2200
0.280
142.4
2.21
52.1
0.232
65.2
0.3474
-35.4
2500
0.303
135.4
2.01
46.1
0.262
62.4
0.3343
-42.2
2800
0.329
130.0
1.85
39.7
0.290
59.5
0.3053
-49.1
3000
0.357
124.8
1.73
36.0
0.308
57.1
0.2807
-53.7
100
0.397
-66.0
29.45
134.1
0.017
69.8
0.722
-27.5
300
0.240
-128.2
13.50
103.4
0.038
71.1
0.427
-28.1
500
0.205
-153.8
8.43
92.3
0.058
73.5
0.370
-21.0
800
0.199
-175.5
5.43
82.0
0.089
74.3
0.360
-17.3
1000
0.195
176.6
4.42
77.1
0.110
73.8
0.362
-17.7
1200
0.202
168.2
3.73
72.0
0.131
72.5
0.363
-19.7
1500
0.219
159.0
3.08
65.5
0.162
70.5
0.359
-23.6
1800
0.235
151.5
2.62
59.0
0.193
68.6
0.352
-28.0
2000
0.252
145.7
2.40
55.2
0.215
66.8
0.346
-31.1
2200
0.274
140.0
2.24
51.6
0.235
65.3
0.338
-34.5
2500
0.300
134.2
2.03
46.0
0.265
62.4
0.325
-41.1
2800
0.326
129.2
1.87
39.6
0.293
59.4
0.295
-48.3
3000
0.357
124.8
1.76
35.8
0.311
57.0
0.270
-52.9
100
0.301
-82.0
32.38
128.8
0.016
71.9
0.662
-29.4
300
0.219
-143.6
13.79
100.3
0.036
74.7
0.393
-25.7
500
0.201
-165.8
8.52
90.3
0.057
76.5
0.352
-18.3
800
0.198
176.3
5.46
80.6
0.090
76.1
0.350
-15.2
1000
0.201
170.4
4.43
75.9
0.111
75.2
0.354
-16.0
1200
0.204
163.8
3.75
71.1
0.133
73.5
0.356
-18.2
1500
0.222
156.2
3.09
64.5
0.164
71.3
0.353
-22.3
1800
0.242
149.4
2.62
58.1
0.195
69.2
0.346
-26.9
2000
0.263
144.6
2.40
54.4
0.216
67.3
0.340
-30.2
2200
0.279
139.7
2.24
50.9
0.238
65.6
0.332
-33.6
2500
0.308
133.6
2.03
45.0
0.267
62.4
0.318
-40.7
2800
0.336
128.8
1.86
39.2
0.295
59.4
0.288
-47.6
3000
0.365
124.1
1.75
35.0
0.313
56.8
0.264
-52.1
100
0.900
-19.9
6.84
163.2
0.026
76.9
0.967
-8.4
deg
5
S12
LIN
MAG
deg
deg
deg
Document Number 85022
Rev. 1.6, 08-Sep-08
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
VCE/V
IC/mA
f/MHz
S11
S21
LIN
MAG
ANG
300
0.751
500
800
8
8
5
10
15
Document Number 85022
Rev. 1.6, 08-Sep-08
S22
ANG
-54.9
5.70
136.6
0.615
-82.0
4.59
118.3
0.083
50.7
0.724
-25.0
0.480
-113.9
3.43
99.5
0.098
47.1
0.632
-27.6
1000
0.440
-130.1
2.94
90.8
0.105
47.8
0.601
-29.0
1200
0.408
-145.1
2.55
82.7
0.112
49.8
0.579
-30.8
1500
0.391
-164.8
2.16
72.4
0.123
54.2
0.556
-33.8
1800
0.390
178.5
1.87
63.5
0.138
59.0
0.544
-37.6
2000
0.398
168.6
1.73
58.4
0.153
61.7
0.536
-40.4
2200
0.407
159.6
1.62
54.0
0.169
64.2
0.529
-43.5
2500
0.429
147.7
1.48
46.7
0.198
65.9
0.523
-49.7
2800
0.454
138.6
1.37
39.9
0.226
66.3
0.502
-56.8
3000
0.474
131.5
1.29
35.2
0.249
65.3
0.482
-62.1
100
0.777
-30.5
14.06
154.7
0.023
73.1
0.916
-14.5
300
0.532
-76.2
9.71
122.4
0.050
58.9
0.675
-26.7
500
0.391
-104.5
6.82
105.5
0.065
57.3
0.552
-27.2
800
0.306
-135.8
4.64
90.5
0.086
60.4
0.489
-25.3
1000
0.283
-149.1
3.84
83.7
0.101
62.3
0.473
-25.5
1200
0.268
-163.0
3.27
77.3
0.116
63.8
0.466
-26.5
1500
0.271
-180.0
2.72
69.1
0.139
65.1
0.454
-29.4
1800
0.281
166.6
2.33
61.5
0.165
65.9
0.445
-33.0
2000
0.298
158.8
2.14
57.3
0.184
65.6
0.440
-35.7
2200
0.312
151.8
2.00
53.2
0.204
65.3
0.432
-38.8
2500
0.339
142.4
1.82
46.8
0.232
64.1
0.424
-45.0
2800
0.369
134.7
1.68
40.1
0.260
62.2
0.397
-51.6
3000
0.388
128.9
1.57
35.8
0.278
60.2
0.373
-56.0
100
0.618
-43.7
21.93
145.3
0.020
70.6
0.837
-20.6
300
0.356
-96.4
12.30
111.7
0.042
63.6
0.542
-28.7
500
0.262
-125.0
8.01
97.8
0.059
66.0
0.448
-24.9
800
0.218
-153.5
5.24
85.6
0.086
68.9
0.417
-21.1
1000
0.211
-164.9
4.28
80.1
0.104
69.7
0.413
-21.1
1200
0.205
-175.7
3.63
74.6
0.123
69.6
0.411
-22.5
1500
0.219
170.4
3.00
67.4
0.150
68.8
0.404
-25.9
1800
0.235
158.9
2.56
60.5
0.180
67.8
0.398
-29.7
2000
0.249
152.1
2.34
56.8
0.200
66.6
0.392
-32.5
2200
0.268
145.5
2.19
52.8
0.221
65.4
0.384
-35.6
2500
0.294
138.8
1.99
46.9
0.250
63.1
0.373
-42.0
2800
0.322
132.3
1.83
40.4
0.276
60.4
0.343
-48.4
3000
0.352
126.8
1.72
36.3
0.294
58.0
0.316
-52.2
100
0.512
-52.8
26.62
139.4
0.019
70.3
0.780
-24.0
deg
8
S12
LIN
MAG
LIN
MAG
ANG
0.063
59.9
deg
LIN
MAG
ANG
0.838
-20.1
deg
deg
www.vishay.com
5
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
VCE/V
IC/mA
f/MHz
S11
S21
LIN
MAG
ANG
300
0.279
500
800
ANG
-109.2
13.28
0.215
-137.0
0.191
-164.4
1000
0.186
1200
1500
20
S22
LIN
MAG
ANG
LIN
MAG
ANG
106.8
0.039
67.4
0.480
-28.0
8.43
94.6
5.46
83.6
0.057
70.3
0.408
-22.1
0.086
72.1
0.391
-173.2
4.44
-18.5
78.5
0.107
72.1
0.391
-18.9
0.189
177.0
0.203
164.6
3.76
73.4
0.126
71.5
0.392
-20.4
3.10
66.6
0.155
69.8
0.386
1800
0.219
-24.0
155.3
2.65
60.1
0.185
68.4
0.380
2000
-28.1
0.238
148.9
2.42
56.1
0.206
66.9
0.374
-31.0
2200
0.252
143.5
2.26
52.6
0.226
65.5
0.367
-34.1
2500
0.282
136.5
2.05
46.8
0.256
62.9
0.355
-40.7
2800
0.312
130.7
1.88
40.7
0.282
60.2
0.325
-47.2
3000
0.335
126.0
1.77
36.7
0.300
57.8
0.302
-51.4
100
0.436
-60.6
29.61
135.1
0.017
69.8
0.735
-26.1
300
0.239
-118.9
13.78
104.1
0.037
70.4
0.444
-26.9
500
0.192
-147.0
8.62
92.8
0.057
72.9
0.387
-20.3
800
0.178
-170.5
5.55
82.5
0.087
73.8
0.378
-16.7
1000
0.177
-179.4
4.51
77.5
0.108
73.4
0.380
-17.2
1200
0.176
172.3
3.82
72.6
0.128
72.4
0.382
-19.2
1500
0.195
161.7
3.15
66.0
0.157
70.6
0.378
-22.9
1800
0.214
153.4
2.69
59.6
0.188
68.8
0.371
-27.2
2000
0.229
148.2
2.45
56.1
0.209
67.2
0.366
-30.1
2200
0.251
142.5
2.28
52.4
0.230
65.6
0.358
-33.4
2500
0.275
135.6
2.08
46.5
0.258
62.8
0.345
-40.0
2800
0.304
130.5
1.91
40.7
0.286
59.9
0.316
-46.5
3000
0.333
125.8
1.79
36.4
0.303
57.6
0.292
-50.8
deg
8
S12
LIN
MAG
deg
deg
deg
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10000
f T – Transition Frequency ( MHz )
Ptot - Total Power Dissipation (mW)
300
250
200
150
100
50
6000
4000
96 12159
V CE = 8 V
f = 500 MHz
2000
0
0
0
20
40
60
80 100 120 140 160
Tamb - Ambient Temperature (°C)
Figure 1. Total Power Dissipation vs. Ambient Temperature
www.vishay.com
6
8000
0
12867
10
20
30
40
I C – Collector Current ( mA )
50
Figure 2. Transition Frequency vs. Collector Current
Document Number 85022
Rev. 1.6, 08-Sep-08
BFQ67 / BFQ67R / BFQ67W
Ccb – Collector Base Capacitance ( pF )
Vishay Semiconductors
1.0
0.8
0.6
0.4
0.2
f = 1 MHz
0.0
0
12884
4
8
12
16
20
V CB – Collector Base Voltage ( V )
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
F – Noise Figure ( dB )
5
4
f = 2 GHz
3
2
f = 800 MHz
1
V CE = 8 V
ZS = 50
0
0
12869
5
10
15
20
I C – Collector Current ( mA )
25
Figure 4. Noise Figure vs. Collector Current
Document Number 85022
Rev. 1.6, 08-Sep-08
www.vishay.com
7
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
VCE = 8 V, IC = 15 mA, Z0 = 50 Ω
S11
S21
j
90 °
120 °
j0.5
60 °
j2
150 °
j0.2
30 °
j5
0.1
3.0 GHz
0.3
2.0
0
0.2
1
1.0
2
1.0
ı
∞
5
180 °
3.0 GHz
20
40
0°
0.3
–j0.2
–j5
0.1
–150 °
–j0.5
–30 °
–j2
–120°
–j
12998
–60°
–90 °
13000
Figure 7. Forward Transmission Coefficient
Figure 5. Input Reflection Coefficient
S12
S22
90 °
120 °
j
60 °
j0.5
3.0 GHz
150 °
j2
30 °
2.0
j0.2
j5
1.0
0.1
180 °
0.2
0.4
0°
0
0.2
0.5
1
3.0 GHz
–150 °
Figure 6. Reverse Transmission Coefficient
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8
13501
∞
1.0
–j5
–j0.5
–60 °
–90 °
12999
5
–j0.2
–30 °
–120 °
0.8
–j2
–j
Figure 8. Output Reflection Coefficient
Document Number 85022
Rev. 1.6, 08-Sep-08
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
0.175 (0.007)
0.098 (0.005)
0.1 (0.004) max.
2.6 (0.102)
2.35 (0.092)
0.4 (0.016)
0.4 (0.016)
0.95 (0.037)
1.15 (0.045)
Package Dimensions in mm (Inches)
ISO Method E
3.1 (0.122)
Mounting Pad Layout
2.8 (0.110)
0.52 (0.020)
0.4 (0.016)
C
E
1.20 (0.047)
1.43 (0.056)
0.9 (0.035)
2.0 (0.079)
B
0.95 (0.037)
0.95 (0.037)
0.95 (0.037)
0.95 (0.037)
9511346
0.175 (0.007)
0.098 (0.005)
0.1 (0.004) max.
2.6 (0.102)
2.35 (0.092)
0.4 (0.016)
0.4 (0.016)
0.95 (0.037)
1.15 (0.045)
Package Dimensions in mm (Inches)
ISO Method E
3.1 (0.122)
Mounting Pad Layout
2.8 (0.110)
0.52 (0.020)
0.4 (0.016)
C
B
0.95 (0.037)
1.20 (0.047)
1.43 (0.056)
0.9 (0.035)
2.0 (0.079)
E
0.95 (0.037)
0.95 (0.037)
0.95 (0.037)
9511346
Document Number 85022
Rev. 1.6, 08-Sep-08
www.vishay.com
9
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
Package Dimensions in mm (Inches)
96 12236
www.vishay.com
10
Document Number 85022
Rev. 1.6, 08-Sep-08
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85022
Rev. 1.6, 08-Sep-08
www.vishay.com
11
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1