FQPF8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ. 12 pF) • 100% Avalanche Tested D G G D S TO-220F S Absolute Maximum Ratings T Symbol VDSS ID o C = 25 C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) FQPF8N60C 600 Unit V 7.5 * A 4.6 * A 30 * A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 7.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 14.7 4.5 48 0.38 -55 to +150 mJ V/ns W W/°C °C 300 °C FQPF8N60C 2.6 Unit °C/W 62.5 °C/W dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ± 30 V 230 mJ * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case, Max. RθJA Thermal Resistance, Junction-to-Ambient, Max. ©2004 Fairchild Semiconductor Corporation FQPF8N60C Rev. C0 1 www.fairchildsemi.com FQPF8N60C — N-Channel QFET® MOSFET November 2013 Part Number FQPF8N60C Electrical Characteristics T Symbol Package TO-220F Top Mark FQPF8N60C Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units o C = 25 C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit 600 -- -- V -- 0.7 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA VDS = 480 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.75 A -- 1.0 1.2 Ω gFS Forward Transconductance VDS = 40 V, ID = 3.75 A -- 8.7 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 965 1255 pF -- 105 135 pF -- 12 16 pF -- 16.5 45 ns -- 60.5 130 ns -- 81 170 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 7.5 A, RG = 25 Ω (Note 4) VDS = 480 V, ID = 7.5 A, VGS = 10 V (Note 4) -- 64.5 140 ns -- 28 36 nC -- 4.5 -- nC -- 12 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 7.5 A ISM -- -- 30 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 7.5 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 365 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 7.5 A, dIF / dt = 100 A/µs -- 3.4 -- µC 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 7.3 mH, IAS = 7.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC. 3. ISD ≤ 7.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25oC. 4. Essentially independent of operating temperature. ©2004 Fairchild Semiconductor Corporation FQPF8N60C Rev. C0 2 www.fairchildsemi.com FQPF8N60C — N-Channel QFET® MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : .0 V Top : ID, Drain Current [A] 10 1 10 ID, Drain Current [A] 1 0 10 -1 0 10 o 25 C -1 10 2 1 10 o -55 C 0 10 ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ -1 10 o 150 C 10 6 4 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 3.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 1 10 3.0 VGS = 10V 2.5 2.0 1.5 VGS = 20V 1.0 0 10 150℃ ※ Note : TJ = 25℃ 0.5 -1 0 5 10 15 10 20 0.2 0.4 ID, Drain Current [A] 2000 10 VGS, Gate-Source Voltage [V] Ciss 1200 Coss 1000 800 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 600 Crss 400 1.0 1.4 VDS = 120V VDS = 300V 8 VDS = 480V 6 4 2 200 0 -1 10 1.2 12 1600 1400 0.8 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1800 0.6 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Capacitance [pF] ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test 25℃ ※ Note : ID = 8A 0 0 10 1 10 5 10 15 20 25 30 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation FQPF8N60C Rev. C0 0 Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQPF8N60C — N-Channel QFET® MOSFET ! (continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4 A 0.5 0.0 -100 200 -50 0 50 100 150 TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 8 Operation in This Area is Limited by R DS(on) 2 10 200 o TJ, Junction Temperature [ C] o 10 10 ms 100 ms 6 ID, Drain Current [A] ID, Drain Current [A] 10 µs 100 µs 1 1 ms DC 0 10 -1 2 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 10 0 25 -2 10 0 1 10 2 10 4 3 10 10 50 ZθJC(t), Thermal Response [oC/W] 100 125 150 Figure 10. Maximum Drain Current vs Case Temperature Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] D = 0 .5 0 0 .2 0 .1 0 .0 5 10 ※ N o te s : 1 . Z θ J C (t) = 2 .6 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) -1 0 .0 2 0 .0 1 PDM s in g le p u ls e 10 t1 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 t1 , S q u a r e W a v e P u l s e D u r a t i o n [ s e c ] 10 1 Figure 11. Transient Thermal Response Curve ©2004 Fairchild Semiconductor Corporation FQPF8N60C Rev. C0 4 www.fairchildsemi.com FQPF8N60C — N-Channel QFET® MOSFET ! FQPF8N60C — N-Channel QFET® MOSFET 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp Time tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2004 Fairchild Semiconductor Corporation FQPF8N60C Rev. C0 5 www.fairchildsemi.com + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2004 Fairchild Semiconductor Corporation FQPF8N60C Rev. C0 6 www.fairchildsemi.com FQPF8N60C — N-Channel QFET® MOSFET DUT FQPF8N60C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2004 Fairchild Semiconductor Corporation FQPF8N60C Rev. C0 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2004 Fairchild Semiconductor Corporation FQPF8N60C Rev. C0 8 www.fairchildsemi.com FQPF8N60C — N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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