MMBT3906TT1 General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT−416/SC−75 package which is designed for low power surface mount applications. Features • Pb−Free Package is Available http://onsemi.com GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector−Emitter Voltage VCEO −40 Vdc Collector−Base Voltage VCBO −40 Vdc Emitter−Base Voltage VEBO −5.0 Vdc IC −200 mAdc Symbol Max Unit 200 1.6 mW mW/°C 600 °C/W CASE 463 SOT−416/SC−75 STYLE 1 300 2.4 mW mW/°C MARKING DIAGRAM Collector Current − Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR−4 Board (Note 1) @TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation, FR−4 Board (Note 2) @TA = 25°C Derated above 25°C 3 2 PD RqJA 1 PD Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 400 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad 2A M G G 1 2A = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMBT3906TT1 SOT−416 3000 / Tape & Reel MMBT3906TT1G SOT−416 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 1 1 Publication Order Number: MMBT3906TT1/D MMBT3906TT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −40 − −40 − −5.0 − − −50 − −50 60 80 100 60 30 − − 300 − − − − −0.25 −0.4 −0.65 − −0.85 −0.95 250 − − 4.5 − 10.0 2.0 12 0.1 10 100 400 3.0 60 − 4.0 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −10 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = −30 Vdc, VEB = −3.0 Vdc) IBL Collector Cutoff Current (VCE = −30 Vdc, VEB = −3.0 Vdc) ICEX Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VBE(sat) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance1 (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hie Voltage Feedback Ratio (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hre Small −Signal Current Gain (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hfe Output Admittance (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hoe Noise Figure (VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz) NF MHz pF pF kW X 10− 4 − mmhos dB SWITCHING CHARACTERISTICS Delay Time (VCC = −3.0 Vdc, VBE = 0.5 Vdc) td − 35 Rise Time (IC = −10 mAdc, IB1 = −1.0 mAdc) tr − 35 Storage Time (VCC = −3.0 Vdc, IC = −10 mAdc) ts − 225 Fall Time (IB1 = IB2 = −1.0 mAdc) tf − 75 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.com 2 ns ns r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE MMBT3906TT1 1.0 D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 1. Normalized Thermal Response 3V +9.1 V 275 275 < 1 ns 10 k 10 k 0 CS < 4 pF* +10.6 V 3V < 1 ns 300 ns 10 < t1 < 500 ms DUTY CYCLE = 2% CS < 4 pF* 1N916 DUTY CYCLE = 2% 10.9 V t1 * Total shunt capacitance of test jig and connectors Figure 2. Delay and Rise Time Equivalent Test Circuit Figure 3. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 5000 7.0 3000 2000 5.0 Cobo Q, CHARGE (pC) CAPACITANCE (pF) TJ = 25°C TJ = 125°C Cibo 3.0 2.0 VCC = 40 V IC/IB = 10 QT 1000 700 500 300 200 QA 100 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 70 50 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 4. Capacitance Figure 5. Charge Data http://onsemi.com 3 200 MMBT3906TT1 500 500 IC/IB = 10 300 200 VCC = 40 V IB1 = IB2 300 200 t f , FALL TIME (ns) IC/IB = 20 TIME (ns) 100 70 50 tr @ VCC = 3.0 V 30 20 10 7 5 15 V 40 V 2.0 V 2.0 3.0 5.0 7.0 10 20 30 50 70 100 70 50 200 IC/IB = 10 30 20 10 7 5 td @ VOB = 0 V 1.0 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. Turn −On Time Figure 7. Fall Time TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 4.0 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 mA 2.0 1.0 0 0.1 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 20 40 IC = 0.5 mA 8.0 6.0 4.0 IC = 50 mA 2.0 IC = 100 mA 0 0.1 100 0.2 0.4 1.0 2.0 4.0 10 RS, SOURCE RESISTANCE (kW) Figure 8. Figure 9. http://onsemi.com 4 20 40 100 MMBT3906TT1 h PARAMETERS (VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe , OUTPUT ADMITTANCE (m mhos) 300 hfe , CURRENT GAIN 200 100 70 50 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 70 50 30 20 10 7.0 5.0 5.0 7.0 10 0.1 0.2 Figure 10. Current Gain 10 5.0 7.0 10 h re , VOLTAGE FEEDBACK RATIO (X 10−4 ) 10 10 h ie , INPUT IMPEDANCE (kΩ) 5.0 7.0 Figure 11. Output Admittance 20 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 12. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio h FE , DC CURRENT GAIN (NORMALIZED) STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 −55 °C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 14. DC Current Gain http://onsemi.com 5 20 30 50 70 100 200 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) MMBT3906TT1 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 TJ = 25°C V, VOLTAGE (VOLTS) 0.8 θV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 15. Collector Saturation Region VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.6 0.4 0.2 0 VCE(sat) @ IC/IB = 10 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 1.0 0.5 +25°C TO +125°C −55 °C TO +25°C 0 −0.5 +25°C TO +125°C −1.0 qVS FOR VBE(sat) −55 °C TO +25°C −1.5 −2.0 200 qVC FOR VCE(sat) 0 Figure 16. “ON” Voltages 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) Figure 17. Temperature Coefficients http://onsemi.com 6 180 200 MMBT3906TT1 PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e −D− DIM A A1 b C D E e L HE 1 M D HE C 0.20 (0.008) E INCHES NOM 0.031 0.002 0.008 0.006 0.063 0.031 0.04 BSC 0.004 0.006 0.061 0.063 MIN 0.027 0.000 0.006 0.004 0.059 0.027 MAX 0.035 0.004 0.012 0.010 0.067 0.035 0.008 0.065 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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