Plastic-Encapsulate Transistors FEATURES MMBT4403 Switching transistor) (PNP) Marking:2T MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC 600 mA Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 1. BASE 2. EMITTER SOT-23 3. COLLECTO unless otherwise specified) Parameter Symbol Collector-base breakdown voltage VCBO Collector-emitter breakdown voltage VCEO IC= -1mA , IB=0 -40 V Emitter-base breakdown voltage VEBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 μA Collector cut-off current ICEO VCE=-35 V, IB=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA DC current gain hFE VCE=-2V, IC= -150mA Collector-emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA -0.4 V Base-emitter saturation voltage VBE(sat) IC=- 150mA, IB=-15mA -0.95 V Transition frequency fT Test conditions IC=-100μA , IE=0 VCE= -10V, IC= -20mA Min Max -40 100 200 Unit V 300 MHz f = 100MHz GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P1 Plastic-Encapsulate Transistors MMBT4403 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P2