Cypress CY7C1339F-133AC 4-mbit (128k x 32) pipelined sync sram Datasheet

CY7C1339F
4-Mbit (128K x 32) Pipelined Sync SRAM
Functional Description[1]
Features
• Registered inputs and outputs for pipelined operation
• 128K × 32 common I/O architecture
• 3.3V core power supply
• 2.5V / 3.3V I/O operation
• Fast clock-to-output times
— 2.6 ns (for 250-MHz device)
— 2.6 ns (for 225-MHz device)
— 2.8 ns (for 200-MHz device)
The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells
with advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE1), depth-expansion Chip Enables (CE2 and CE3), Burst
Control inputs (ADSC, ADSP, and ADV), Write Enables
(BW[A:D], and BWE), and Global Write (GW). Asynchronous
inputs include the Output Enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
— 3.5 ns (for 166-MHz device)
— 4.0 ns (for 133-MHz device)
— 4.5 ns (for 100-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel
Pentium interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Offered in JEDEC-standard 100-pin TQFP and 119-ball
BGA packages
• “ZZ” Sleep Mode Option
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to four bytes wide as
controlled by the byte write control inputs. GW when active
LOW causes all bytes to be written.
The CY7C1339F operates from a +3.3V core power supply
while all outputs may operate with either a +2.5 or +3.3V
supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
Logic Block Diagram
A 0, A 1, A
A DDRESS
REGISTER
2
A [1:0]
M ODE
A DV
CLK
Q1
BURST
COUNTER
CLR A ND
Q0
LOGIC
A DSC
A DSP
BW D
DQ D
BYTE
W RITE REGISTER
DQ D
BYTE
W RITE DRIVER
BW C
DQ C
BYTE
W RITE REGISTER
DQ C
BYTE
W RITE DRIVER
DQ B
BYTE
W RITE REGISTER
DQ B
BYTE
W RITE DRIVER
BW B
BW A
BW E
ZZ
ENA BLE
REGISTER
SENSE
A M PS
OUTPUT
REGISTERS
OUTPUT
BUFFERS
E
DQs
DQ A
BYTE
W RITE DRIVER
DQ A
BYTE
W RITE REGISTER
GW
CE 1
CE 2
CE 3
OE
M EM ORY
A RRA Y
INPUT
REGISTERS
PIPELINED
ENABLE
SLEEP
CONTROL
1
Note:
1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05217 Rev. *C
•
3901 North First Street
•
San Jose, CA 95134
•
408-943-2600
Revised April 09, 2004
CY7C1339F
Selection Guide
250 MHz
225 MHz
200 MHz
166 MHz
133 MHz
100 MHz
Unit
Maximum Access Time
2.6
2.6
2.8
3.5
4.0
4.5
ns
Maximum Operating Current
325
290
265
240
225
205
mA
Maximum CMOS Standby Current
40
40
40
40
40
40
mA
Shaded areas contain advanced information. Please contact your local Cypress sales representative for availability of these parts.
BYTE C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100-pin TQFP
CY7C1339F
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
NC
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQB
DQB
VSSQ
VDDQ
DQB
DQB
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSSQ
DQA
DQA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
NC
BYTE B
BYTE A
Document #: 38-05217 Rev. *C
NC
NC
VSS
VDD
NC
NC
A
A
A
A
A
A
A
MODE
A
A
A
A
A1
A0
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
BYTE D
NC
DQC
DQC
VDDQ
VSSQ
DQC
DQC
DQC
DQC
VSSQ
VDDQ
DQC
DQC
NC
VDD
NC
VSS
DQD
DQD
VDDQ
VSSQ
DQD
DQD
DQD
DQD
VSSQ
VDDQ
DQD
DQD
NC
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
A
A
CE1
CE2
BWD
BWC
BWB
BWA
CE3
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
Pin Configurations
Page 2 of 17
CY7C1339F
Pin Configurations (continued)
119-ball BGA
CY7C1339F (128K × 32)
1
2
3
4
5
6
7
VDDQ
A
NC
NC
CE2
A
A
ADSP
A
A
ADSC
VDD
A
A
VDDQ
A
A
NC
A
NC
NC
D
E
DQC
DQC
NC
DQC
VSS
VSS
NC
CE1
VSS
VSS
NC
DQB
DQB
DQB
F
G
H
J
VDDQ
DQC
DQC
VDDQ
DQC
DQC
DQC
VDD
VSS
BWc
VSS
NC
OE
ADV
GW
VDD
VSS
BWB
VSS
NC
DQB
DQB
DQB
VDD
VDDQ
DQB
DQB
VDDQ
K
DQD
DQD
VSS
CLK
VSS
DQA
DQA
L
DQD
DQD
BWD
NC
BWA
DQA
DQA
M
N
VDDQ
DQD
DQD
DQD
VSS
VSS
BWE
A1
VSS
VSS
DQA
DQA
VDDQ
DQA
P
DQD
NC
VSS
A0
VSS
NC
DQA
R
T
NC
NC
A
MODE
VDD
A
A
NC
A
A
NC
NC
NC
ZZ
U
VDDQ
NC
NC
NC
NC
NC
VDDQ
A
B
C
Pin Definitions
BGA
TQFP
I/O
Description
A0, A1, A
Name
P4,N4,
A2,C2,R2,
A3,B3,C3,
T3,T4,A5,
B5,C5,T5,
A6,C6,R6
37,36,
32,33,34,
35,44,45,
46,47,48,
49,50,81,
82,99,
100
InputSynchronous
Address Inputs used to select one of the 128K address locations.
Sampled at the rising edge of the CLK if ADSP or ADSC is active LOW,
and CE1, CE2, and CE3 are sampled active. A1, A0 are fed to the two-bit
counter..
BWA,BWB
L5,G5,G3,
L3
93,94,95,
96
InputSynchronous
Byte Write Select Inputs, active LOW. Qualified with BWE to conduct
byte writes to the SRAM. Sampled on the rising edge of CLK.
GW
H4
88
InputSynchronous
Global Write Enable Input, active LOW. When asserted LOW on the
rising edge of CLK, a global write is conducted (ALL bytes are written,
regardless of the values on BW[A:D] and BWE).
BWE
M4
87
InputSynchronous
Byte Write Enable Input, active LOW. Sampled on the rising edge of
CLK. This signal must be asserted LOW to conduct a byte write.
CLK
K4
89
InputClock
Clock Input. Used to capture all synchronous inputs to the device. Also
used to increment the burst counter when ADV is asserted LOW, during
a burst operation.
E4
98
InputSynchronous
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK.
Used in conjunction with CE2 and CE3 to select/deselect the device.
ADSP is ignored if CE1 is HIGH.
B2
97
InputSynchronous
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK.
Used in conjunction with CE1 and CE3 to select/deselect the device.
BWC,BWD
CE1
CE2
Document #: 38-05217 Rev. *C
Page 3 of 17
CY7C1339F
Pin Definitions (continued)
Name
BGA
TQFP
I/O
CE3
-
92
InputSynchronous
OE
F4
86
ADV
G4
83
InputSynchronous
Advance Input signal, sampled on the rising edge of CLK, active
LOW. When asserted, it automatically increments the address in a burst
cycle.
A4
84
InputSynchronous
Address Strobe from Processor, sampled on the rising edge of
CLK, active LOW. When asserted LOW, addresses presented to the
device are captured in the address registers. A1, A0 are also loaded into
the burst counter. When ADSP and ADSC are both asserted, only ADSP
is recognized. ASDP is ignored when CE1 is deasserted HIGH.
ADSC
B4
85
InputSynchronous
Address Strobe from Controller, sampled on the rising edge of
CLK, active LOW. When asserted LOW, addresses presented to the
device are captured in the address registers. A1, A0 are also loaded into
the burst counter. When ADSP and ADSC are both asserted, only ADSP
is recognized.
ZZ
T7
64
InputZZ “sleep” Input, active HIGH. When asserted HIGH places the device
Asynchronous in a non-time-critical “sleep” condition with data integrity preserved. For
normal operation, this pin has to be LOW or left floating. ZZ pin has an
internal pull-down.
DQs
K6,L6,M6,
N6,K7,L7,
N7,P7,E6,
F6,G6,H6,
D7,E7,G7,
H7,D1,E1,
G1,H1,E2,
F2,G2,H2,
K1,L1,N1,
P1,K2,L2,
M2,N2
52,53,56,
57,58,59,
62,63,68,
69,72,73,
74,75,78,
79,2,3,6,
7,8,9,12,
13,18,19,
22,23,24,
25,28,29
I/OSynchronous
VDD
J2,J4,R4
15,41,65,
91
Power Supply Power supply inputs to the core of the device.
VSS
D3,E3,F3,
K3,M3,N3,
P3,D5,E5,
F5,H5,K5,
M5,N5,P5
17,40,67,
90
Ground
Ground for the core of the device.
VDDQ
A1,F1,J1,
M1,U1,A7,
F7,J7,M7,
U7
4,11,20,
27,54,61,
70,77
I/O Power
Supply
Power supply for the I/O circuitry.
VSSQ
-
5,10,21,
26,55,60,
71,76
I/O Ground
Ground for the I/O circuitry.
R3
31
InputStatic
ADSP
MODE
Document #: 38-05217 Rev. *C
Description
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK.
Used in conjunction with CE1 and CE2 to select/deselect the device. Not
connected for BGA. Where referenced, CE3 is assumed active
throughout this document for BGA.
InputOutput Enable, asynchronous input, active LOW. Controls the
Asynchronous direction of the I/O pins. When LOW, the I/O pins behave as outputs.
When deasserted HIGH, I/O pins are three-stated, and act as input data
pins. OE is masked during the first clock of a read cycle when emerging
from a deselected state.
Bidirectional Data I/O lines. As inputs, they feed into an on-chip data
register that is triggered by the rising edge of CLK. As outputs, they
deliver the data contained in the memory location specified by the
addresses presented during the previous clock rise of the read cycle.
The direction of the pins is controlled by OE. When OE is asserted LOW,
the pins behave as outputs. When HIGH, DQs are placed in a three-state
condition.
Selects Burst Order. When tied to GND selects linear burst sequence.
When tied to VDD or left floating selects interleaved burst sequence. This
is a strap pin and should remain static during device operation. Mode
Pin has an internal pull-up.
Page 4 of 17
CY7C1339F
Pin Definitions (continued)
Name
NC
BGA
TQFP
B1,C1,R1,
T1,D2,P2,
T2,U2,J3,
U3,D4,L4,
U4,J5,U5,
B6,D6,P6,
T6,U6,B7,
C7,R5,R7
1,14,16,
30,38,39,
42,43,51,
66,80
I/O
Description
No Connects. Not internally connected to the die
Functional Overview
Single Write Accesses Initiated by ADSP
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise (tCO) is 3.5 ns
(166-MHz device).
This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP is asserted LOW, and
(2) CE1, CE2, CE3 are all asserted active. The address
presented to A is loaded into the address register and the
address advancement logic while being delivered to the
memory array. The Write signals (GW, BWE, and BW[A:D]) and
ADV inputs are ignored during this first cycle.
The CY7C1339F supports secondary cache in systems
utilizing either a linear or interleaved burst sequence. The
interleaved burst order supports Pentium and i486
processors. The linear burst sequence is suited for processors
that utilize a linear burst sequence. The burst order is user
selectable, and is determined by sampling the MODE input.
Accesses can be initiated with either the Processor Address
Strobe (ADSP) or the Controller Address Strobe (ADSC).
Address advancement through the burst sequence is
controlled by the ADV input. A two-bit on-chip wraparound
burst counter captures the first address in a burst sequence
and automatically increments the address for the rest of the
burst access.
Byte Write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BW[A:D]) inputs. A Global Write
Enable (GW) overrides all Byte Write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed Write circuitry.
Three synchronous Chip Selects (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. ADSP is ignored if
CE1 is HIGH.
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)
CE1, CE2, CE3 are all asserted active, and (3) the Write
signals (GW, BWE) are all deserted HIGH. ADSP is ignored if
CE1 is HIGH. The address presented to the address inputs (A)
is stored into the address advancement logic and the Address
Register while being presented to the memory array. The
corresponding data is allowed to propagate to the input of the
Output Registers. At the rising edge of the next clock the data
is allowed to propagate through the output register and onto
the data bus within 3.5 ns (166-MHz device) if OE is active
LOW. The only exception occurs when the SRAM is emerging
from a deselected state to a selected state, its outputs are
always three-stated during the first cycle of the access. After
the first cycle of the access, the outputs are controlled by the
OE signal. Consecutive single Read cycles are supported.
Once the SRAM is deselected at clock rise by the chip select
and either ADSP or ADSC signals, its output will three-state
immediately.
Document #: 38-05217 Rev. *C
ADSP-triggered Write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQs inputs is written into the corresponding address location in the memory array. If GW is HIGH,
then the Write operation is controlled by BWE and BW[A:D]
signals. The CY7C1339F provides Byte Write capability that is
described in the Write Cycle Descriptions table. Asserting the
Byte Write Enable input (BWE) with the selected Byte Write
(BW[A:D]) input, will selectively write to only the desired bytes.
Bytes not selected during a Byte Write operation will remain
unaltered. A synchronous self-timed Write mechanism has
been provided to simplify the Write operations.
Because the CY7C1339F is a common I/O device, the Output
Enable (OE) must be deserted HIGH before presenting data
to the DQs inputs. Doing so will three-state the output drivers.
As a safety precaution, DQs are automatically three-stated
whenever a Write cycle is detected, regardless of the state of
OE.
Single Write Accesses Initiated by ADSC
ADSC Write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is
deserted HIGH, (3) CE1, CE2, CE3 are all asserted active, and
(4) the appropriate combination of the Write inputs (GW, BWE,
and BW[A:D]) are asserted active to conduct a Write to the
desired byte(s). ADSC-triggered Write accesses require a
single clock cycle to complete. The address presented to A is
loaded into the address register and the address
advancement logic while being delivered to the memory array.
The ADV input is ignored during this cycle. If a global Write is
conducted, the data presented to the DQs is written into the
corresponding address location in the memory core. If a Byte
Write is conducted, only the selected bytes are written. Bytes
not selected during a Byte Write operation will remain
unaltered. A synchronous self-timed Write mechanism has
been provided to simplify the Write operations.
Because the CY7C1339F is a common I/O device, the Output
Enable (OE) must be deserted HIGH before presenting data
to the DQs inputs. Doing so will three-state the output drivers.
As a safety precaution, DQs are automatically three-stated
whenever a Write cycle is detected, regardless of the state of
OE.
Page 5 of 17
CY7C1339F
Burst Sequences
Interleaved Burst Address Table
(MODE = Floating or VDD)
The CY7C1339F provides a two-bit wraparound counter, fed
by A1, A0, that implements either an interleaved or linear burst
sequence. The interleaved burst sequence is designed specifically to support Intel Pentium applications. The linear burst
sequence is designed to support processors that follow a
linear burst sequence. The burst sequence is user selectable
through the MODE input.
Asserting ADV LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both Read and Write burst operations are supported.
First
Address
A1, A0
Second
Address
A1, A0
Third
Address
A1, A0
Fourth
Address
A1, A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Linear Burst Address Table (MODE = GND)
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CE1, CE2, CE3, ADSP, and ADSC must
remain inactive for the duration of tZZREC after the ZZ input
returns LOW.
First
Address
A1, A0
Second
Address
A1, A0
Third
Address
A1, A0
Fourth
Address
A1, A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min.
IDDZZ
Snooze mode standby current
ZZ > VDD – 0.2V
tZZS
Device operation to ZZ
ZZ > VDD – 0.2V
tZZREC
ZZ recovery time
ZZ < 0.2V
tZZI
ZZ active to snooze current
This parameter is sampled
tRZZI
ZZ Inactive to exit snooze current
This parameter is sampled
Max.
Unit
40
mA
2tCYC
ns
2tCYC
ns
2tCYC
0
ns
ns
Truth Table[ 2, 3, 4, 5, 6, 7]
Operation
Add. Used
CE1 CE2 CE3 ZZ
H
X
X
L
Deselect Cycle, Power-down
None
Deselect Cycle, Power-down
None
L
L
X
L
Deselect Cycle, Power-down
None
L
X
H
Deselect Cycle, Power-down
None
L
L
X
DQ
WRITE OE CLK
X
X L-H three-state
ADSP
X
ADSC
L
ADV
X
L
X
X
X
X
L-H
three-state
L
L
X
X
X
X
L-H
three-state
L
H
L
X
X
X
L-H
three-state
Deselect Cycle, Power-down
None
L
X
H
L
H
L
X
X
X
L-H
three-state
Snooze Mode, Power-down
None
X
X
X
H
X
X
X
X
X
X
three-state
READ Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
L
L-H
Q
READ Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
H
L-H
three-state
WRITE Cycle, Begin Burst
External
L
H
L
L
H
L
X
L
X
L-H
D
READ Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
L
L-H
Q
READ Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
H
L-H
three-state
Next
X
X
X
L
H
H
L
H
L
L-H
Q
READ Cycle, Continue Burst
Notes:
2. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
3. WRITE = L when any one or more Byte Write enable signals (BWA, BWB, BWC, BWD) and BWE = L or GW= L. WRITE = H when all Byte write enable signals
(BWA, BWB, BWC, BWD), BWE, GW = H.
4. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
5. CE1, CE2, and CE3 are available only in the TQFP package. BGA package has only 2 chip selects CE1 and CE2.
6. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW[A: D]. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to three-state. OE is
a don't care for the remainder of the write cycle
7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are three-state when OE
is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Document #: 38-05217 Rev. *C
Page 6 of 17
CY7C1339F
Truth Table[ 2, 3, 4, 5, 6, 7]
Operation
Add. Used
READ Cycle, Continue Burst
Next
CE1 CE2 CE3 ZZ
X
X
X
L
READ Cycle, Continue Burst
Next
H
X
X
READ Cycle, Continue Burst
Next
H
X
X
WRITE Cycle, Continue Burst
Next
X
X
WRITE Cycle, Continue Burst
Next
H
X
DQ
WRITE OE CLK
H
H L-H three-state
ADSP
H
ADSC
H
ADV
L
L
X
H
L
H
L
L-H
Q
L
X
H
L
H
H
L-H
three-state
X
L
H
H
L
L
X
L-H
D
X
L
X
H
L
L
X
L-H
D
READ Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L-H
Q
READ Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L-H
three-state
READ Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L-H
Q
READ Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L-H
three-state
WRITE Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L-H
D
WRITE Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L-H
D
Partial Truth Table for Read/Write[2, 8]
Function
Read
GW
H
BWE
H
BWD
X
BWC
X
BWB
X
BWA
X
Read
H
L
H
H
H
H
Write Byte A – DQA
Write Byte B – DQB
H
L
H
H
H
L
H
L
H
H
L
H
Write Bytes B, A
H
L
H
H
L
L
Write Byte C– DQC
H
L
H
L
H
H
Write Bytes C, A
H
L
H
L
H
L
Write Bytes C, B
H
L
H
L
L
H
Write Bytes C, B, A
H
L
H
L
L
L
Write Byte D– DQD
H
L
L
H
H
H
Write Bytes D, A
H
L
L
H
H
L
Write Bytes D, B
H
L
L
H
L
H
Write Bytes D, B, A
H
L
L
H
L
L
Write Bytes D, C
H
L
L
L
H
H
Write Bytes D, C, A
H
L
L
L
H
L
Write Bytes D, C, B
H
L
L
L
L
H
Write All Bytes
H
L
L
L
L
L
Write All Bytes
L
X
X
X
X
X
Notes:
8. Table only lists a partial listing of the byte write combinations. Any combination of BW[A:D] is valid. Appropriate write will be done based on which byte write is active.
Document #: 38-05217 Rev. *C
Page 7 of 17
CY7C1339F
Maximum Ratings
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
(Above which the useful life may be impaired. For user guidelines, not tested.)
Latch-up Current..................................................... >200 mA
Storage Temperature ................................. –65°C to +150°C
Operating Range
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VDD Relative to GND........ –0.5V to +4.6V
Range
Ambient
Temperature
DC Voltage Applied to Outputs
in three-state ....................................... –0.5V to VDDQ + 0.5V
Commercial
0°C to +70°C
Industrial
DC Input Voltage....................................–0.5V to VDD + 0.5V
Electrical Characteristics Over the Operating Range
Parameter
Description
VDD
VDDQ
3.3V –5%/+10% 2.5V –5%
to VDD
–40°C to +85°C
[9, 10]
Test Conditions
Min.
Max.
Unit
VDD
Power Supply Voltage
3.135
3.6
V
VDDQ
I/O Supply Voltage
2.375
VDD
V
VOH
Output HIGH Voltage
VOL
VIH
VIL
IX
Output LOW Voltage
Input HIGH
Input LOW
Voltage[9]
Voltage[9]
Input Load Current
except ZZ and MODE
VDDQ = 3.3V, VDD = Min., IOH = –4.0 mA
2.4
V
VDDQ = 2.5V, VDD = Min., IOH = –1.0 mA
2.0
V
VDDQ = 3.3V, VDD = Min., IOL = 8.0 mA
0.4
V
VDDQ = 2.5V, VDD = Min., IOL = 1.0 mA
0.4
V
VDDQ = 3.3V
2.0
VDD + 0.3V
V
VDDQ = 2.5V
1.7
VDD + 0.3V
V
VDDQ = 3.3V
–0.3
0.8
V
VDDQ = 2.5V
–0.3
0.7
V
–5
5
µA
GND ≤ VI ≤ VDDQ
Input = VDD
Input Current of ZZ
5
Input = VSS
IOZ
Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled
VDD Operating Supply
Current
ISB1
ISB2
Automatic CE
Power-down
Current—TTL Inputs
VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL
f = fMAX = 1/tCYC
Automatic CE
VDD = Max, Device Deselected,
Power-down
VIN ≤ 0.3V or VIN > VDDQ – 0.3V,
Current—CMOS Inputs f = 0
µA
µA
–5
Input = VDD
IDD
µA
–30
Input Current of MODE Input = VSS
30
µA
5
µA
4-ns cycle, 250 MHz
325
mA
4.4-ns cycle, 225 MHz
290
mA
5-ns cycle, 200 MHz
265
mA
6-ns cycle, 166 MHz
240
mA
7.5-ns cycle, 133 MHz
225
mA
10-ns cycle, 100 MHz
205
mA
4-ns cycle, 250 MHz
120
mA
4.4-ns cycle, 225 MHz
115
mA
5-ns cycle, 200 MHz
110
mA
6-ns cycle, 166 MHz
100
mA
7.5-ns cycle, 133 MHz
90
mA
–5
10-ns cycle, 100 MHz
80
mA
All speeds
40
mA
Shaded area contains advanced information.
Notes:
9. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > -2V (Pulse width less than tCYC/2).
10. TPower-up: Assumes a linear ramp from 0v to VDD(min.) within 200ms. During this time VIH < VDD and VDDQ < VDD.
Document #: 38-05217 Rev. *C
Page 8 of 17
CY7C1339F
Electrical Characteristics Over the Operating Range (continued)[9, 10]
Parameter
ISB3
Description
Test Conditions
Min.
Max.
Unit
105
mA
100
mA
95
mA
6-ns cycle, 166 MHz
85
mA
7.5-ns cycle, 133 MHz
75
mA
Automatic CE
VDD = Max, Device Deselected, or 4-ns cycle, 250 MHz
Power-down
VIN ≤ 0.3V or VIN > VDDQ – 0.3V 4.4-ns cycle, 225 MHz
Current—CMOS Inputs f = fMAX = 1/tCYC
5-ns cycle, 200 MHz
ISB4
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = 0
Automatic CE
Power-down
Current—TTL Inputs
10-ns cycle, 100 MHz
65
mA
All Speeds
45
mA
Shaded areas contain advance information.
Thermal Resistance[11]
Parameter
Description
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
Test Conditions
TQFP
Package
BGA
Package
Unit
41.83
47.63
°C/W
9.99
11.71
°C/W
Test conditions follow standard test
methods and procedures for
measuring thermal impedance, per
EIA / JESD51.
Capacitance[11]
Parameter
Description
CIN
Input Capacitance
CCLK
Clock Input Capacitance
CI/O
Input/Output Capacitance
TQFP
Package
Test Conditions
TA = 25°C, f = 1 MHz,
VDD = 3.3V.
VDDQ = 3.3V
BGA
Package
Unit
5
5
pF
5
5
pF
5
7
pF
AC Test Loads and Waveforms
3.3V I/O Test Load
R = 317Ω
3.3V
OUTPUT
OUTPUT
RL = 50Ω
Z0 = 50Ω
VT = 1.5V
(a)
GND
5 pF
R = 351Ω
INCLUDING
JIG AND
SCOPE
OUTPUT
RL = 50Ω
≤ 1ns
(c)
ALL INPUT PULSES
VDDQ
GND
5 pF
R =1538Ω
VT = 1.25V
INCLUDING
JIG AND
SCOPE
90%
10%
90%
≤ 1ns
R = 1667Ω
2.5V
OUTPUT
(a)
10%
(b)
2.5V I/O Test Load
Z0 = 50Ω
ALL INPUT PULSES
VDDQ
(b)
10%
90%
10%
90%
≤ 1ns
≤ 1ns
(c)
Note:
11. Tested initially and after any design or process change that may affect these parameters
Document #: 38-05217 Rev. *C
Page 9 of 17
CY7C1339F
Switching Characteristics Over the Operating Range[16, 17]
250 MHz
Parameter
tPOWER
225 MHz
200 MHz
166 MHz
133 MHz
100 MHz
Min. Max Min. Max Min. Max Min. Max Min. Max Min. Max Unit
Description
VDD(Typical) to the first Access[12]
1
1
1
1
1
1
ms
Clock
tCYC
Clock Cycle Time
4.0
4.4
5.0
6.0
7.5
10
ns
tCH
Clock HIGH
1.7
2.0
2.0
2.5
3.0
3.5
ns
tCL
Clock LOW
1.7
2.0
2.0
2.5
3.0
3.5
ns
Output Times
tCO
Data Output Valid After CLK Rise
tDOH
Data Output Hold After CLK Rise
tCLZ
Clock to Low-Z[13, 14, 15]
tCHZ
High-Z[13, 14, 15]
tOEV
tOELZ
Clock to
OE LOW to Output Valid
OE LOW to Output Low-Z[13, 14, 15]
2.6
2.8
3.5
4.0
4.5
ns
1.0
1.0
1.0
2.0
2.0
2.0
ns
0
0
0
0
0
0
ns
2.6
2.6
2.8
3.5
4.0
4.5
ns
2.6
2.6
2.8
3.5
4.5
4.5
ns
0
[13, 14, 15]
tOEHZ
2.6
0
2.6
OE HIGH to Output High-Z
Set-up Times
0
2.6
0
2.8
0
3.5
0
4.0
ns
4.5
ns
tAS
Address Set-up Before CLK Rise
0.8
1.2
1.2
1.5
1.5
1.5
ns
tADS
ADSC, ADSP Set-up Before CLK
Rise
0.8
1.2
1.2
1.5
1.5
1.5
ns
tADVS
ADV Set-up Before CLK Rise
GW, BWE, BW[A:D] Set-up Before
CLK Rise
0.8
1.2
1.2
1.5
1.5
1.5
ns
tWES
0.8
1.2
1.2
1.5
1.5
1.5
ns
tDS
Data Input Set-up Before CLK Rise 0.8
1.2
1.2
1.5
1.5
1.5
ns
tCES
Chip Enable Set-Up Before CLK
Rise
0.8
1.2
1.2
1.5
1.5
1.5
ns
tAH
Address Hold After CLK Rise
0.4
0.5
0.5
0.5
0.5
0.5
ns
tADH
0.4
0.5
0.5
0.5
0.5
0.5
ns
0.4
0.5
0.5
0.5
0.5
0.5
ns
0.4
0.5
0.5
0.5
0.5
0.5
ns
tDH
ADSP , ADSC Hold After CLK Rise
ADV Hold After CLK Rise
GW,BWE, BW[A:D] Hold After CLK
Rise
Data Input Hold After CLK Rise
0.4
0.5
0.5
0.5
0.5
0.5
ns
tCEH
Chip Enable Hold After CLK Rise
0.4
0.5
0.5
0.5
0.5
0.5
ns
Hold Times
tADVH
tWEH
Shaded areas contain advance information.
Notes:
12. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a read or write operation
can be initiated.
13. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
14. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions
15. This parameter is sampled and not 100% tested.
16. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V.
17. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
Document #: 38-05217 Rev. *C
Page 10 of 17
CY7C1339F
Switching Waveforms
Read Cycle Timing[18]
t CYC
CLK
t
CH
t
ADS
t
CL
t
ADH
ADSP
tADS
tADH
ADSC
tAS
tAH
A1
ADDRESS
A2
tWES
A3
Burst continued with
new base address
tWEH
GW, BWE,
BW[A:D]
tCES
Deselect
cycle
tCEH
CE
tADVS tADVH
ADV
ADV
suspends
burst.
OE
t OEHZ
t CLZ
Data Out (Q)
High-Z
Q(A1)
tOEV
tCO
t OELZ
tDOH
Q(A2)
t CHZ
Q(A2 + 1)
Q(A2 + 2)
Q(A2 + 3)
Q(A2)
Q(A2 + 1)
t CO
Burst wraps around
to its initial state
Single READ
BURST READ
DON’T CARE
UNDEFINED
Notes:
18. On this diagram, when CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH, CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
19. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BW[A:D] LOW.
Document #: 38-05217 Rev. *C
Page 11 of 17
CY7C1339F
Switching Waveforms (continued)
Write Cycle Timing[18, 19]
t CYC
CLK
tCH
tADS
tCL
tADH
ADSP
tADS
ADSC extends burst
tADH
tADS
tADH
ADSC
tAS
tAH
A1
ADDRESS
A2
A3
Byte write signals are
ignored for first cycle when
ADSP initiates burst
tWES tWEH
BWE,
BW[A :D]
tWES tWEH
GW
tCES
tCEH
CE
t
t
ADVS ADVH
ADV
ADV suspends burst
OE
tDS
Data In (D)
High-Z
t
OEHZ
tDH
D(A1)
D(A2)
D(A2 + 1)
D(A2 + 1)
D(A2 + 2)
D(A2 + 3)
D(A3)
D(A3 + 1)
D(A3 + 2)
Data Out (Q)
BURST READ
Single WRITE
BURST WRITE
DON’T CARE
Document #: 38-05217 Rev. *C
Extended BURST WRITE
UNDEFINED
Page 12 of 17
CY7C1339F
Switching Waveforms (continued)
Read/Write Cycle Timing[18, 20, 21]
tCYC
CLK
tCL
tCH
tADS
tADH
tAS
tAH
ADSP
ADSC
ADDRESS
A1
A2
A3
A4
A5
A6
D(A5)
D(A6)
tWES tWEH
BWE,
BW[A:D]
tCES
tCEH
CE
ADV
OE
tDS
tCO
tDH
tOELZ
Data In (D)
High-Z
tCLZ
Data Out (Q)
High-Z
Q(A1)
Back-to-Back READs
tOEHZ
D(A3)
Q(A2)
Q(A4)
Single WRITE
Q(A4+1)
Q(A4+2)
BURST READ
DON’T CARE
Q(A4+3)
Back-to-Back
WRITEs
UNDEFINED
Note:
20. The data bus (Q) remains in high-Z following a WRITE cycle, unless a new read access is initiated by ADSP or ADSC.
21. GW is HIGH.
Document #: 38-05217 Rev. *C
Page 13 of 17
CY7C1339F
Switching Waveforms (continued)
ZZ Mode Timing [22, 23]
CLK
t ZZ
ZZ
I
t ZZREC
t ZZI
SUPPLY
I DDZZ
t RZZI
ALL INPUTS
(except ZZ)
DESELECT or READ Only
Outputs (Q)
High-Z
DON’T CARE
Ordering Information
Speed
(MHz)
250
Ordering Code
CY7C1339F-250AC
CY7C1339F-250BGC
CY7C1339F-250AI
225
A101
100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm)
Commercial
BG119
A101
BG119
A101
BG119
A101
CY7C1339F-225BGI
BG119
CY7C1339F-200AC
A101
CY7C1339F-200BGC
CY7C1339F-200AI
BG119
A101
CY7C1339F-200BGI
BG119
CY7C1339F-166AC
A101
CY7C1339F-166BGC
CY7C1339F-166AI
133
Operating
Range
CY7C1339F-225AC
CY7C1339F-225AI
166
Package Type
CY7C1339F-250BGI
CY7C1339F-225BGC
200
Package
Name
BG119
A101
CY7C1339F-166BGI
BG119
CY7C1339F-133AC
A101
CY7C1339F-133BGC
CY7C1339F-133AI
CY7C1339F-133BGI
BG119
A101
BG119
119-ball BGA (14 x 22 x 2.4mm)
100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm)
Industrial
119-ball BGA (14 x 22 x 2.4mm)
100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm)
Commercial
119-ball BGA(14 x 22 x 2.4mm)
100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm)
Industrial
119-ball BGA(14 x 22 x 2.4mm)
100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm)
Commercial
119-ball BGA(14 x 22 x 2.4mm)
100-lead Thin Quad Flat Pack(14 x 20 x 1.4mm)
Industrial
119-ball BGA(14 x 22 x 2.4mm)
100-lead Thin Quad Flat Pack(14 x 20 x 1.4mm)
Commercial
119-ball BGA(14 x 22 x 2.4mm)
100-lead Thin Quad Flat Pack(14 x 20 x 1.4mm)
Industrial
119-ball BGA(14 x 22 x 2.4mm)
100-lead Thin Quad Flat Pack(14 x 20 x 1.4mm)
Commercial
119-ball BGA(14 x 22 x 2.4mm)
100-lead Thin Quad Flat Pack(14 x 20 x 1.4mm)
Industrial
119-ball BGA(14 x 22 x 2.4mm)
Notes:
22. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device.
23. DQs are in high-Z when exiting ZZ sleep mode
Document #: 38-05217 Rev. *C
Page 14 of 17
CY7C1339F
Ordering Information (continued)
Speed
(MHz)
100
Ordering Code
CY7C1339F-100AC
CY7C1339F-100BGC
CY7C1339F-100AI
CY7C1339F-100BGI
Package
Name
Package Type
Operating
Range
A101
100-lead Thin Quad Flat Pack(14 x 20 x 1.4mm)
Commercial
BG119
A101
BG119
119-ball BGA(14 x 22 x 2.4mm)
100-lead Thin Quad Flat Pack(14 x 20 x 1.4mm)
Industrial
119-ball BGA(14 x 22 x 2.4mm)
Shaded areas contain advanced information.
Please contact your local Cypress sales representative for availability of these parts.
Package Diagrams
100-pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A101
51-85050-*A
51-85050-*A
Document #: 38-05217 Rev. *C
Page 15 of 17
CY7C1339F
Package Diagrams (continued)
51-85115-*B
i486 is a trademark, and Intel and Pentium are registered trademarks, of Intel Corporation. PowerPC is a registered trademark
of IBM Corporation. All product and company names mentioned in this document may be trademarks of their respective holders.
Document #: 38-05217 Rev. *C
Page 16 of 17
© Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
CY7C1339F
Document History Page
Document Title: CY7C1339F 4-Mbit (128K x 32) Pipelined Sync SRAM
Document Number: 38-05217
REV.
ECN NO.
Issue Date
Orig. of
Change
Description of Change
**
119284
01/06/03
HGK
New Data Sheet
*A
123850
01/18/03
AJH
Added power-up requirements to AC test loads and waveforms information
*B
200660
See ECN
REF
Final Data Sheet
*C
213342
See ECN
VBL
Update Ordering Info section: unshade active parts. -133AI & BGI
Document #: 38-05217 Rev. *C
Page 17 of 17