ASB0130 SMD Schottky Barrier Diode Features General Description IO = 100mA 0603(1608) VR = 30V 0.071(1.80) 0.063(1.60) - Designed for mounting on small surface. 0.039(1.00) 0.031(0.80) - Extremely thin package. - Low drop-down voltage. 0.033(0.85) 0.028(0.70) - Majority carrier conduction. 0.010(0.25)Typ. - Lead-free device 0.012(0.30)Typ. 0.014(0.35)Typ. Dimensions in inches and (millimeter) 1005(2512) P+ 0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10) Mechanical Data - Case :0603(1608) 1005(2512) standard package, 0.035(0.90) 0.027(0.70) molded plastic. 0.014(0.35)Typ. - Terminals : Gold plated, solderable per MIL-STD-750, method 2026. 0.012(0.30)Typ. - Polarity : Indicated by cathode band. 0.014(0.35)Typ. - Mounting position : Any. Dimensions in inches and (millimeter) - Weight : BD:0.003gram (approximately) BF:0.006gram (approximately) Ordering information A XX Feature XX XX XX lo Vo SB : Schottky Barrier Package type BD-0603 BF-1005 This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Aug 2, 2004 1/3 ASB0130 SMD Schottky Barrier Diode Maximum Rating (at TA=25ºC unless otherwise noted) Symbol Parameter VRRM Min Typ Max Unit Repetitive peak reverse voltage - - 35 V VR Reverse voltage - - 30 V IO Average forward current - - 100 mA - 1000 - - 1000 - - - 150 250 mW IFSM Forward current, surge peak PD Power Dissipation Conditions 0603 1005 8.3ms single half sine-wave superimposed on rate load (JEDEC method) 0603 1005 mA TSTG Storage temperature -40 - +125 ºC Tj Junction temperature -40 - +125 ºC Electrical Characteristics (at TA=25ºC unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit VF Forward voltage IF=100mADC - - 0.44 V IR Reverse current VR=30V - - 30 µA CT Capacitance between terminals F=1MHz, and 10 VDC reverse voltage - 9 - pF Anachip Corp. www.anachip.com.tw Rev. 1.0 Aug 2, 2004 2/3 ASB0130 SMD Schottky Barrier Diode Rating And Characteristic Curves 125 C 75 C 25 C -25 C f = 1 MHz Ta = 25 C Ambient temperature ( C ) Marking Information ASB0130 B3 Anachip Corp. www.anachip.com.tw Rev. 1.0 Aug 2, 2004 3/3