NTK3134N Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723 Features • • • • • http://onsemi.com N channel Switch with Low RDS(on) 44% Smaller Footprint and 38% Thinner than SC89 Low Threshold Levels Allowing 1.5 V RDS(on) Rating Operated at Low Logic Level Gate Drive These are Pb−Free Devices V(BR)DSS 20 V Applications • • • • Load/Power Switching Interface Switching Logic Level Shift Battery Management for Ultra Small Portable Electronics RDS(on) TYP ID Max 0.20 W @ 4.5 V 890 mA 0.26 W @ 2.5 V 790 mA 0.42 W @ 1.8 V 700 mA 0.62 W @ 1.5 V 200 mA SOT−723 (3−LEAD) 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±6 V ID 890 mA Parameter Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C 640 t≤5s TA = 25°C 990 Steady State TA = 25°C PD t≤5s Continuous Drain Current (Note 2) Steady State Power Dissipation (Note 2) Pulsed Drain Current 1 2 Top View 1 − Gate 2 − Source 3 − Drain mW 450 550 TA = 25°C ID TA = 85°C TA = 25°C tp = 10 ms Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8” from case for 10 s) MARKING DIAGRAM mA 750 540 KF M PD 310 mW IDM 1.8 A TJ, TSTG −55 to 150 °C TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface mounted on FR4 board using the minimum recommended pad size SOT−723 CASE 631AA STYLE 5 1 KF M = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping † NTK3134NT1G SOT−723* 4000 / Tape & Reel NTK3134NT5G SOT−723* 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *These packages are inherently Pb−Free. © Semiconductor Components Industries, LLC, 2006 December, 2006 − Rev. 0 1 Publication Order Number: NTK3134N/D NTK3134N THERMAL RESISTANCE RATINGS Symbol Max Unit Junction−to−Ambient – Steady State (Note 3) Parameter RqJA 280 °C/W Junction−to−Ambient – t = 5 s (Note 3) RqJA 228 Junction−to−Ambient – Steady State Minimum Pad (Note 4) RqJA 400 3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 4. Surface mounted on FR4 board using the minimum recommended pad size MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, Reference to 25°C Zero Gate Voltage Drain Current IDSS Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Gate−to−Source Leakage Current VGS = 0 V, VDS = 16 V V 18 mV/°C TJ = 25°C 1.0 TJ = 125°C 2.0 IGSS VDS = 0 V, VGS = ±4.5 V VGS(TH) VGS = VDS, ID = 250 mA ±0.5 mA mA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance 0.45 1.2 2.4 gFS V mV/°C VGS = 4.5 V, ID = 890 mA 0.20 0.35 VGS = 2.5 V, ID = 780 mA 0.26 0.45 VGS = 1.8 V, ID = 700 mA 0.43 0.65 VGS = 1.5 V, ID = 200 mA 0.56 1.2 VDS = 10 V, ID = 800 mA 1.6 VGS = 0 V, f = 1 MHz, VDS = 16 V 79 120 W S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS 13 20 Reverse Transfer Capacitance CRSS 9.0 15 pF SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn On Delay Time Rise Time TurnOff Delay Time Fall Time td(ON) tr VGS = 4.5 V, VDS = 10 V, ID = 500 mA, RG = 10 W ns 6.7 4.8 td(OFF) 17.3 tf 7.4 DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR VGS = 0 V, IS = 350 mA TJ = 25°C VGS = 0 V, dISD/dt = 100 A/ms, IS = 1.0 A, VDD = 20 V 0.75 8.1 Charge Time ta Discharge Time tb 1.7 QRR 3.0 Reverse Recovery Charge 5. Pulse Test: pulse width = 300 ms, duty cycle = 2% 6. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 1.2 V ns 6.4 nC NTK3134N TYPICAL CHARACTERISTICS 2.0 2.0 VDS ≥ 5 V VGS = 4.5 V to 2.2 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 2.0 V 1.5 1.8 V TJ = 25°C 1.0 1.6 V 1.5 V 0.5 1.5 1.0 TJ = 25°C 0.5 TJ = 125°C 1.4 V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0.75 1.25 1.5 1.75 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS, GATE−TO−SOURCE VOLTAGE (V) 1.50 ID = 0.89 A TJ = 25°C 1.25 1.00 0.75 0.50 0.25 0 1 1.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 2.0 0.30 TJ = 25°C 0.28 0.25 VGS = 2.5 V 0.23 0.20 VGS = 4.5 V 0.18 0.15 0.3 0.6 0.8 1.1 1.3 1.6 1.8 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 0.6 VGS = 0 V VGS = 1.5 V, ID = 200 mA IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = −55°C 0 0.5 0.4 VGS = 2.5 V, ID = 710 mA 0.3 TJ = 150°C 1000 VGS = 1.8 V, ID = 710 mA TJ = 125°C 100 0.2 0.1 −60 −35 VGS = 4.5 V, ID = 1 A −10 15 40 65 10 90 115 140 5.0 10 15 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTK3134N TYPICAL CHARACTERISTICS 140 100 120 100 t, TIME (ns) Ciss 80 60 td(off) 10 tf td(on) tr 40 Coss 20 Crss 0 1 0 2 4 6 8 10 12 14 16 18 20 1 10 100 DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation vs. Gate Resistance 1.0 150°C VGS = 0 V 0.9 IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) VDD = 10 V ID = 500 mA VGS = 4.5 V VGS = 0 V TJ = 25°C 125°C 0.8 25°C 0.7 0.6 0.5 0.4 0.3 TJ = −55°C 0.2 0.1 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 1.0 NTK3134N PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y DIM A b b1 C D E e HE L C MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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