ETL MC74VHC1G08DTT1 2-input and gate Datasheet

2-Input AND Gate
MC74VHC1G08
The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves
high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G08 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
This allows the MC74VHC1G08 to be used to interface 5 V circuits to 3 V circuits.
• High Speed: t PD = 3.5 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A = 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 15
MARKING DIAGRAMS
5
4
1
2
V2d
3
SC–88A / SOT–353/SC–70
DF SUFFIX
CASE 419A
Pin 1
d = Date Code
5
Figure 1. Pinout (Top View)
4
V2d
1
2
Figure 2. Logic Symbol
3
TSOP–5/SOT–23/SC–59
DT SUFFIX
CASE 483
Pin 1
d = Date Code
FUNCTION TABLE
Inputs
PIN ASSIGNMENT
1
2
3
4
5
IN B
IN A
GND
OUT Y
V CC
A
L
L
H
H
B
L
H
L
H
Output
Y
L
L
L
H
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VH8–1/4
MC74VHC1G08
MAXIMUM RATINGS
Symbol
V CC
V IN
V OUT
Parameter
Value
Unit
– 0.5 to + 7.0
V
– 0.5 to 7.0
V
V CC=0
– 0.5 to 7.0
V
High or Low State
–0.5 to V cc + 0.5
I IK
Input Diode Current
–20
mA
I OK
Output Diode Current
V OUT < GND; V OUT > V CC
+20
mA
I OUT
DC Output Current, per Pin
+ 25
mA
I CC
DC Supply Current, V CC and GND
+50
mA
PD
Power dissipation in still air
SC–88A, TSOP–5
200
mW
θ JA
Thermal resistance
SC–88A, TSOP–5
333
°C/W
TL
Lead Temperature, 1 mm from Case for 10 s
260
°C
TJ
Junction Temperature Under Bias
+ 150
°C
T stg
Storage temperature
–65 to +150
°C
V ESD
ESD Withstand Voltage
Human Body Model (Note 2)
>2000
V
Machine Model (Note 3)
> 200
Charged Device Model (Note 4)
N/A
Latch–Up Performance Above V CC and Below GND at 125°C (Note 5)
± 500
mA
I LATCH–UP
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
DC Supply Voltage
DC Input Voltage
DC Output Voltage
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V CC
DC Supply Voltage
V IN
DC Input Voltage
V OUT
DC Output Voltage
TA
Operating Temperature Range
t r ,t f
Input Rise and Fall Time
Min
2.0
0.0
0.0
– 55
0
0
V CC = 3.3 ± 0.3 V
V CC = 5.0 ± 0.5 V
Max
5.5
5.5
7.0
+ 125
100
20
Unit
V
V
V
°C
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
Time,
Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time,
Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
NORMALIZED FAILURE RATE
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
80
90
100
110
120
130
140
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time
Junction Temperature
VH8–2/4
MC74VHC1G08
DC ELECTRICAL CHARACTERISTICS
V
Symbol
V IH
Parameter
Minimum High–Level
Test Conditions
Input Voltage
V IL
Maximum Low–Level
Input Voltage
V OH
V OL
Min
1.5
Max
Min
1.5
Max
Min
1.5
3.0
4.5
2.1
3.15
2.1
3.15
2.1
3.15
5.5
2.0
3.85
3.85
3.85
V
0.5
0.5
0.9
1.35
0.9
1.35
2.0
1.9
1.9
3.0
4.5
2.9
4.4
3.0
4.0
2.9
4.4
2.9
4.4
V IN = V IH or V IL
I OH = –4 mA
3.0
2.58
2.48
2.34
I OH = –8 mA
V IN = V IH or V IL
4.5
2.0
3.94
3.80
I OL = 50 µA
3.0
4.5
I OH = – 50 µA
Unit
V
0.9
1.35
1.9
Output Voltage
V IN = V IH or V IL
Max
0.5
5.5
2.0
V IN = V IH or V IL
Output Voltage
V IN = V IH or V IL
Typ
T A < 85°C –55°C<TA<125°C
(V)
2.0
3.0
4.5
Minimum High–Level
Maximum Low–Level
T A = 25°C
CC
1.65
1.65
1.65
V
3.66
0.0
0.1
0.1
0.1
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
V
V IN = V IH or V IL
I OL = 4 mA
3.0
0.36
0.44
0.52
4.5
0 to5.5
0.36
±0.1
0.44
±1.0
0.52
±1.0
µA
5.5
2.0
20
40
µA
I IN
Maximum Input
I OL = 8 mA
V IN = 5.5 V or GND
I CC
Leakage Current
Maximum Quiescent
V IN = V CC or GND
Supply Current
AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 ns
Symbol
t PLH ,
t PHL
Parameter
Maximum
Propogation Delay,
Test Conditions
Min
T A < 85°C –55°C to 125°C
T A = 25°C
Typ
Max Min Max Min Max Unit
V CC = 3.3± 0.3 V C L = 15 pF
C L = 50 pF
4.1
5.9
8.8
12.3
10.5
14.0
12.5
16.5
V CC = 5.0± 0.5 V C L = 15 pF
3.5
5.9
7.0
9.0
C L = 50 pF
4.2
5.5
7.9
10
9.0
10
11.0
10
ns
Input A or B to Y
C IN
Maximum Input
pF
Capacitance
Typical @ 25°C, V CC = 5.0 V
C PD
Power Dissipation Capacitance (Note 6)
11
pF
6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without
load. Average operating current can be obtained by the equation: I CC(OPR) = C PD • V CC • f in + I CC . C PD is used to determine the no–
load dynamic power consumption; P D = C PD • V CC 2 • f in + I CC • V CC .
VH8–3/4
MC74VHC1G08
*Includes all probe and jig capacitance
Figure 5. Test Circuit
Figure 4. Switching Waveforms
DEVICE ORDERING INFORMATION
Device Nomenclature
Device Order
Number
Package Type
Logic
Temp
Circuit
Indicator
Range Technology
Identifier
MC74VHC1G08DFT1
MC
74
VHC1G
08
DF
T1
MC74VHC1G08DFT2
MC
74
VHC1G
08
DF
T2
MC74VHC1G08DFT4
MC
74
VHC1G
08
DF
T4
MC74VHC1G08DTT1
MC
74
VHC1G
08
DT
T1
MC74VHC1G08DTT3
MC
74
VHC1G
08
DT
T3
(Name/SOT#/
Reel Suffix Common Name)
Device
Package Tape and
Function
Suffix
SC–70/SC–88A/
SOT–353
SC–70/SC–88A/
SOT–353
SC–70/SC–88A/
SOT–353
SOT–23/TSOPS/
SC–59
SOT–23/TSOPS/
SC–59
Tape and
Reel Size
178 mm (7 in)
3000 Unit
178 mm (7 in)
3000 Unit
330 mm (13 in)
10,000 Unit
178 mm (7 in)
3000 Unit
330 mm (13 in)
10,000 Unit
VH8–4/4
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