E.1 is.il ^>E.tnL-dona\jt.c.t:oi iPtoaacfi, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
IRFZ34
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
V DS (V)
60
VGS = 10V
FlDS(on) (^)
• 175 °C Operating Temperature
0.050
46
• Fast Switching
Qgs(nC)
11
• Ease of Paralleling
Qgd (nC)
22
• Simple Drive Requirements
Qg (Max.) (nC)
Configuration
Single
J,
u
TO-220AB
GO
If
0
s
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25 °C, unless otherwise noted)
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
±20
PARAMETER
Continuous Drain Current
V-c it 10 V
Pulsed Drain Current3
ID
IDM
Maximum Power Dissipation
Tc = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
21
A
120
0.59
W/°C
EAS
200
mJ
PD
88
W
dV/dt
4.5
V/ns
Tj, Tstg
- 5 5 t o + 175
Linear Derating Factor
Single Pulse Avalanche Energyb
V
30
Tc = 25 °C
TC = 100°C
UNIT
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
10
Ibf • in
1.1
N -m
6-32 or M3 screw
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting T, = 25 °C, L = 259 uH, Rg = 25 U, IAS = 30 A (see fig. 12).
c. ISD £ 30 A, dl/dt < 200 A/MS, VDD < VDS, Tj < 175 °C.
d. 1.6 mm from case.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
THERMAL RESISTANCE RATINGS
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
fyhJC
-
1.7
PARAMETER
UNIT
°c/w
SPECIFICATIONS (Tj = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = 250 uA
60
-
-
V
AVDs/Tj
Reference to 25 °C, ID = 1 mA
-
0.065
-
v/°c
VGS(th)
VDS = VGS, ID = 250 uA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
-
-
25
bss
VDS = 48 V, VGS = 0 V, T, = 150 °C
-
-
250
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
VGS = 10V
!D = 18A b
VDS = 25V, ID = 18 A
9fs
MA
-
-
0.050
Q.
9.3
-
-
S
-
1200
-
-
600
-
-
100
-
-
-
46
-
-
11
-
22
Dynamic
Input Capacitance
Ciss
Output Capacitance
CQSS
Reverse Transfer Capacitance
Crss
Total Gate Charge
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
Qg
v
_10V
ID = 30 A, VDS = 48V,
see fig. 6 and 13b
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
Turn-On Delay Time
td(on)
-
13
-
tr
-
100
-
-
29
-
-
52
-
-
4.5
-
-
7.5
-
-
30
-
120
Rise Time
Turn-Off Delay Time
VDD = 30 V, ID = 30 A,
R g = 12fi, R D = 1.0 £J, see fig. 10b
td(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
/fi~"%
(I NI T}
V_^s
MOSFET symbol
showing the
n t~i\l reverse
PF
nC
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Is
Pulsed Diode Forward Current"
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
-
p - n junction diode
Tj = 25 °C, ls = 30 A, VGS = 0 Vb
T
9R °P 1
^("1 A HI/Ht
1 HO A/no
A
-
-
1.6
V
-
120
230
ns
-
0.7
1.4
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width < 300 us; duty cycle < 2 %.