ETL GMBT1036 P n p si l i con plan ar med ium power t r ansi stor Datasheet

CORPORATION
G M BT 1 0 3 6
Description
ISSUED DATE :2006/09/14
REVISED DATE :
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
The GMBT1036 is designed for medium power amplifier applications.
Features
ICMax.=-500mA
Low VCE(sat). Optimal for low voltage operation.
Complementary to GMBT2411
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0°
10°
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Ratings
Unit
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
+150
-55~+150
-40
-32
-5
-500
225
V
V
V
mA
mW
Electrical Characteristics (Ta = 25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
-40
-32
-5
82
-
Typ.
200
7
, unless otherwise stated)
Max.
Unit
Test Conditions
V
IC=-100uA , IE=0
V
IC=-1mA, IB=0
V
IE=-100uA ,IC=0
-1
uA
VCB=-20V, IE=0
-1
uA
VEB=-4V, IC=0
-400
mV
IC=-100mA, IB=-10mA
390
VCE=-3V, IC=-10mA
MHz
VCE=-5V, IE=20mA, f=100MHz
pF
VCB=-10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty Cycle 2%
Classification Of hFE
Rank
HP
HQ
HR
Range
82 - 180
120 - 270
180 - 390
GMBT1036
Page: 1/2
CORPORATION
ISSUED DATE :2006/09/14
REVISED DATE :
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GMBT1036
Page: 2/2
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