DMP32D4S 30V P-CHANNEL ENHANCEMENT MODE MOSFET Features V(BR)DSS RDS(on) Max -30V 2.4Ω @ VGS = -10V 4Ω @ VGS = -4.5V ID Max @TA = +25C -300mA -250mA Low On-Resistance ESD Protected Gate to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Load Switch Portable Applications Power Management Functions Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Weight: 0.006 grams (approximate) Drain SOT23 D Gate ESD PROTECTED Top View Gate Protection Diode S G Source Equivalent Circuit Top View Pin-Out Ordering Information (Note 4) Part Number DMP32D4S-7 DMP32D4S-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information P32S Date Code Key Year Code Month Code 2012 Z Jan 1 2013 A Feb 2 DMP32D4S Document number: DS35822 Rev. 4 - 2 Mar 3 P32S = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Z = 2012) M = Month (ex: 9 = September) YM ADVANCE INFORMATION Product Summary 2014 B Apr 4 May 5 2015 C Jun 6 1 of 6 www.diodes.com 2016 D Jul 7 Aug 8 2017 E Sep 9 Oct O 2018 F Nov N Dec D November 2013 © Diodes Incorporated DMP32D4S Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -10V TA = +25°C TA = +70°C ID Pulsed Drain Current (Note 6) ADVANCE INFORMATION Value -30 ±20 300 250 -1 IDM Unit V V mA A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 6) Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Temperature Range PD RθJA RθJC TJ, TSTG Value 370 540 348 241 91 -55 to +150 Units mW °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 — — — — — — -1 ±10 V µA µA VGS(th) -1.4 -1.2 — — RDS (ON) — — Ω |Yfs| VSD — — 6 0.8 -2.4 -2.0 2.4 4 — 1.2 Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — — 51.16 10.85 8.88 275 0.6 1.2 0.2 0.3 9.86 11.5 31.8 21.9 — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns V S V Test Condition VGS = 0V, ID = -1mA VDS = -30V, VGS = 0V VGS = ±16V, VDS = 0V VDS = VGS, ID = -250μA VDS = -5V, ID = -1μA VGS = -10V, ID = -0.3A VGS = -4.5V, ID = -0.25A VDS = -10V, ID = -400mA VGS = 0V, IS = -300mA VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -4.5V VDS = -10V, VGS = -10V ID = -1A VDS = -15V, ID = -1A VGS = -10V, RG = 6Ω 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP32D4S Document number: DS35822 Rev. 4 - 2 2 of 6 www.diodes.com November 2013 © Diodes Incorporated DMP32D4S 2.0 2.0 1.8 VGS = -10V 1.0 VGS = -3.5V 0.5 1.2 1.0 0.8 0.6 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.8 VGS = -2.5V 0.6 0.5 0.4 VGS = -4.5V 0.3 0.2 0.1 0 0.5 1.0 1.5 2.0 2.5 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 5 0.9 0.7 3.0 VGS = -4.5V TA = 25 C T A = -55C 0 1 2 3 4 -VGS , GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 1.5 ID = -0.5A 1.2 ID = -0.3A 0.9 0.6 0.3 0 0 2 4 6 8 10 12 14 16 18 20 -VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage VGS = -10V ID = -1.0A T A = 150 C 1.0 TA = 125C T A = 85C 0.8 TA = 25C 0.6 TA = -55 C 0.4 0.2 0 0 T A = 85C 1.6 1.4 1.2 TA = 150C TA = 125C 0.2 1.0 0 1.4 0.4 VGS = -3.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () -ID, DRAIN CURRENT (A) VGS = -4.5V VGS = -4.0V 0 VDS = -5.0V 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) -ID, DRAIN CURRENT (A) 1.5 VGS = -2.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION VGS = -5.0V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP32D4S Document number: DS35822 Rev. 4 - 2 3 of 6 www.diodes.com 1.4 VGS = -4.5V ID = -500mA 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature November 2013 © Diodes Incorporated 2.6 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE () 1.5 1.2 0.9 VGS = -4.5V ID = -500mA 0.6 VGS = -10V ID = -1.0A 0.3 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 2.4 2.2 -ID = 1mA 2.0 1.8 -ID = 250µA 1.6 1.4 1.2 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 2.0 f = 1MHz CT, JUNCTION CAPACITANCE (pF) 1.8 -IS, SOURCE CURRENT (A) 1.6 1.4 1.2 1.0 0.8 TA= 150C 0.6 TA= 125C 0.4 0 TA= 85C TA= 25C 0.2 TA= -55C 0 100 Ciss Crss 1 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current Coss 10 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 30 10 -VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION DMP32D4S 8 VDS = -10V ID = -1A 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMP32D4S Document number: DS35822 Rev. 4 - 2 1.4 4 of 6 www.diodes.com November 2013 © Diodes Incorporated DMP32D4S Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. H J K 1 K a M A 1 L L B C D ADVANCE INFORMATION ° 7 l l A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMP32D4S Document number: DS35822 Rev. 4 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com November 2013 © Diodes Incorporated DMP32D4S IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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