APT6020B2VFR
APT6020LVFR
0.200Ω
Ω
600V 30A
POWER MOS V® FREDFET
B2VFR
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode
• Avalanche Energy Rated
• Lower Leakage
• T-MAX™ or TO-264 Package
TO-264
LVFR
D
G
• Faster Switching
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT6020B2VFR_LVFR
UNIT
600
Volts
Drain-Source Voltage
30
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
450
Watts
Linear Derating Factor
3.60
W/°C
VGSM
PD
TJ,TSTG
120
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
30
(Repetitive and Non-Repetitive)
EAR
Volts
1
Amps
35
4
mJ
1600
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
Volts
30
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.200
UNIT
Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
7-2004
BVDSS
Characteristic / Test Conditions
050-7268 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT6020B2VFR_LVFR
Test Conditions
Characteristic
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
5600
6720
Coss
Output Capacitance
VDS = 25V
650
910
Crss
Reverse Transfer Capacitance
f = 1 MHz
280
420
Qg
Total Gate Charge
VGS = 10V
245
365
Qgs
Gate-Source Charge
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
30
115
45
170
VGS = 15V
12
24
Qgd
3
Gate-Drain ("Miller") Charge
t d(on)
Turn-on Delay Time
tr
Rise Time
t d(off)
Turn-off Delay Time
tf
VDD = 0.5 VDSS
12
24
ID = ID [Cont.] @ 25°C
45
70
RG = 0.6Ω
7
14
TYP
MAX
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
IS
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
dv/
MIN
30
Continuous Source Current (Body Diode)
Peak Diode Recovery
dt
1
2
dv/
120
(Body Diode)
dt
UNIT
Amps
(VGS = 0V, IS = -ID [Cont.])
1.3
Volts
5
15
V/ns
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
500
Q rr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
1.6
Tj = 125°C
5.5
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
15
Tj = 125°C
27
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.28
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
D=0.5
0.1
0.2
0.05
0.1
0.05
0.005
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7268 Rev A
7-2004
0.3
0.02
0.01
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
°C/W
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 3.56mH, R = 25Ω, Peak I = 30A
j
G
L
5 I ≤ I [Cont.], di/ = 100A/µs, T ≤ 150°C, R = 2.0Ω, V = 600V.
S
D
j
G
R
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.01
UNIT
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT6020B2VFR_LVFR
60
VGS=6V, 7V, 10V & 15V
50
5.5V
40
30
5V
20
4.5V
10
ID, DRAIN CURRENT (AMPERES)
0
50
40
30
20
TJ = +125°C
10
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
15
10
5
25
40
30
5V
20
4.5V
10
1.5
V
1.4
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.3
1.2
VGS=10V
1.1
VGS=20V
1.0
0.9
0
15
30
45
60
75
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.05
1.2
I = 0.5 I [Cont.]
D
1.10
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
7-2004
2.5
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
20
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
5.5V
1.15
30
0
50
0
4
8
12
16
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
6V
0
0
50
100
150
200
250
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
100
VGS = 7V, 10V & 15V
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7268 Rev A
ID, DRAIN CURRENT (AMPERES)
60
APT6020B2VFR_LVFR
200
20,000
10µS
OPERATION HERE
LIMITED BY RDS (ON)
50
10,000
100µS
1mS
10
5
10mS
100mS
1
DC
TC =+25°C
TJ =+150°C
SINGLE PULSE
.5
.1
VDS=300V
12
VDS=480V
8
4
0
100
TJ =+150°C
50
TJ =+25°C
10
5
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
0
100
200
300
400
500
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
T-MAXTM (B2) Package Outline (B2VFR)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Crss
500
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
VDS=120V
16
1,000
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I = I [Cont.]
D
Coss
100
1
5 10
50 100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
Ciss
5,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
100
TO-264 (L) Package Outline (LVFR)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
050-7268 Rev A
7-2004
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source