TI1 LPV7215 Micropower, cmos input, rrio, 1.8v, push-pull output comparator Datasheet

LPV7215
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SNOSAI6I – SEPTEMBER 2005 – REVISED APRIL 2013
LPV7215Q Micropower, CMOS Input, RRIO, 1.8V, Push-Pull Output Comparator
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FEATURES
DESCRIPTION
1
•
2
•
•
•
•
•
•
•
+
(For V = 1.8V, Typical Unless Otherwise
Noted)
Ultra Low Power Consumption 580 nA
Wide Supply Voltage Range 1.8V to 5.5V
Propagation Delay 4.5 µs
Push-Pull Output Current Drive @ 5V 19 mA
Temperature Range −40°C to 125°C
Rail-to-Rail Input
Tiny 5-Pin SOT23 and SC70 Packages
APPLICATIONS
•
•
•
•
•
The LPV7215Q is an ultra low-power comparator with
a typical power supply current of 580 nA. It has the
best-in-class
power
supply
current
versus
propagation delay performance available among TI's
low-power comparators. The propagation delay is as
low as 4.5 microseconds with 100 mV overdrive at
1.8V supply.
Designed to operate over a wide range of supply
voltages, from 1.8V to 5.5V, with ensured operation
at 1.8V, 2.7V and 5.0V, the LPV7215Q is ideal for
use in a variety of battery-powered applications. With
rail-to-rail common mode voltage range, the
LPV7215Q is well suited for single-supply operation.
Featuring a push-pull output stage, the LPV7215Q
allows for operation with absolute minimum power
consumption when driving any capacitive or resistive
load.
RC Timers
Window Detectors
IR Receiver
Multivibrators
Alarm and Monitoring Circuits
Available in a choice of space-saving packages, the
LPV7215Q is ideal for use in handheld electronics
and mobile phone applications. The LPV7215Q is
manufactured with TI's advanced VIP50 process.
TYPICAL APPLICATION
900
18
VCM = 0.8V
+
V = 1.8V
TA = 25°C
85°C
700
600
PROPAGATION DELAY (Ps)
SUPPLY CURRENT (nA)
800
25°C
500
-40°C
400
300
200
13
tPD L-H
8
100
tPD H-L
0
0
1
2
3
4
5
6
SUPPLY VOLTAGE (V)
Figure 1. Supply Current vs. Supply Voltage
3
1
10
100
1000
OVERDRIVE (mV)
Figure 2. Propagation Delay vs. Overdrive
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2013, Texas Instruments Incorporated
LPV7215
SNOSAI6I – SEPTEMBER 2005 – REVISED APRIL 2013
ABSOLUTE MAXIMUM RATINGS
ESD Tolerance
(3)
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(1) (2)
Human Body Model
2000V
Machine Model
200V
VIN Differential
±2.5V
Supply Voltage (V+ - V−)
6V
V +0.3V, V −0.3V
Voltage at Input/Output pins
−65°C to +150°C
Storage Temperature Range
Junction Temperature
(4)
+150°C
Soldering Information
(1)
(2)
(3)
(4)
−
+
Infrared or Convection (20 sec)
235°C
Wave Soldering Lead Temp. (10 sec)
260°C
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics Tables.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office / Distributors for availability and
specifications.
Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
OPERATING RATINGS
Temperature Range
(1)
(2)
−40°C to 125°C
Supply Voltage (V+ – V−)
1.8V to 5.5V
Package Thermal Resistance (θJA
(1)
(2)
(2)
)
5-Pin SC70
456°C/W
5-Pin SOT-23
234°C/W
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics Tables.
The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
1.8V ELECTRICAL CHARACTERISTICS
(1)
Unless otherwise specified, all limits are specified for TA = 25°C, V+ = 1.8V, V− = 0V, and VCM = V+/2, VO= V−. Boldface limits
apply at the temperature extremes.
Symbol
IS
Parameter
Supply Current
VOS
Input Offset Voltage
TCVOS
Input Offset Average Drift
IB
Input Bias Current
IOS
Input Offset Current
(1)
(2)
(3)
(4)
(5)
2
(5)
Conditions
Min
(2)
Typ
(3)
Max
(2)
VCM = 0.3V
580
750
1050
VCM = 1.5V
790
980
1300
VCM = 0V
±0.3
±6
±8
VCM = 1.8V
±0.4
±5
±7
Units
nA
mV
(4)
±1
μV/C
VCM = 1.6V
−40
fA
10
fA
See
Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device.
Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using
statistical quality control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not specified on shipped
production material.
Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Positive current corresponds to current flowing into the device.
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1.8V ELECTRICAL CHARACTERISTICS (1) (continued)
Unless otherwise specified, all limits are specified for TA = 25°C, V+ = 1.8V, V− = 0V, and VCM = V+/2, VO= V−. Boldface limits
apply at the temperature extremes.
Symbol
CMRR
Parameter
Common Mode Rejection Ratio
Conditions
Min
(2)
Typ
VCM Stepped from 0V to 0.7V
66
62
88
VCM Stepped from 1.2V to 1.8V
68
62
87
VCM Stepped from 0V to 1.8V
44
43
77
66
63
82
(3)
PSRR
Power Supply Rejection Ratio
V+ = 1.8V to 5.5V, VCM = 0V
CMVR
Input Common-Mode Voltage Range
CMRR ≥ 40 dB
−0.1
AV
Voltage Gain
VO
Output Swing High
IO = 500 µA
1.63
1.58
1.69
IO = 1 mA
1.46
1.37
1.60
Output Swing Low
IOUT
trise
tfall
Output Current
(2)
Units
dB
dB
1.9
120
V
88
180
230
IO = −1 mA
180
310
400
Source
VO = V+/2
1.75
1.3
2.26
Sink
VO = V+/2
2.35
1.45
3.1
Overdrive = 10 mV
13
Overdrive = 100 mV
4.5
Propagation Delay
(Low to High)
Overdrive = 10 mV
12.5
Overdrive = 100 mV
6.6
Rise Time
Overdrive = 10 mV
CL = 30 pF, RL = 1 MΩ
80
Overdrive = 100 mV
CL = 30 pF, RL = 1 MΩ
75
Overdrive = 10 mV
CL = 30 pF, RL = 1 MΩ
70
Overdrive = 100 mV
CL = 30 pF, RL = 1 MΩ
65
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mV
mA
6.5
9
μs
9
12
μs
ns
ns
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V
dB
IO = −500 µA
Propagation Delay
(High to Low)
Fall Time
Max
3
LPV7215
SNOSAI6I – SEPTEMBER 2005 – REVISED APRIL 2013
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2.7V ELECTRICAL CHARACTERISTICS
(1)
Unless otherwise specified, all limits are specified for TA = 25°C, V+ = 2.7V, V− = 0V, and VCM = V+/2, VO= V−. Boldface limits
apply at the temperature extremes.
Symbol
IS
Parameter
Supply Current
VOS
Input Offset Voltage
TCVOS
Input Offset Average Drift
(5)
IB
Input Bias Current
IOS
Input Offset Current
CMRR
Common Mode Rejection Ratio
Conditions
VCM = 0V
±0.3
±6
±8
VCM = 2.7V
±0.3
±5
±7
(4)
±1
μV/C
VCM = 1.8V
−40
fA
20
fA
See
VCM Stepped from 0V to 1.6V
72
66
90
VCM Stepped from 2.1V to 2.7V
71
63
94
VCM Stepped from 0V to 2.7V
47
46
80
66
63
82
CMRR ≥ 40 dB
Voltage Gain
VO
Output Swing High
(3)
(4)
(5)
4
Units
1010
1350
Input Common-Mode Voltage Range
(2)
(2)
815
AV
(1)
Max
VCM = 2.4V
CMVR
trise
(3)
780
1100
V+ = 1.8V to 5.5V, VCM = 0V
Output Current
Typ
605
Power Supply Rejection Ratio
IOUT
(2)
VCM = 0.3V
PSRR
Output Swing Low
Min
−0.1
dB
2.8
2.57
2.53
2.62
IO = 1 mA
2.47
2.40
2.53
V
60
130
190
IO = −1 mA
120
250
330
4.5
3.4
5.7
Sink
VO = V+/2
5.6
3.2
7.5
Propagation Delay
(High to Low)
Overdrive = 10 mV
14.5
Overdrive = 100 mV
5.8
Propagation Delay
(Low to High)
Overdrive = 10 mV
15
Overdrive = 100 mV
7.5
Rise Time
Overdrive = 10 mV
CL = 30 pF, RL = 1 MΩ
90
Overdrive = 100 mV
CL = 30 pF, RL = 1 MΩ
85
V
dB
IO = −500 μA
Source
VO = V+/2
mV
dB
120
IO = 500 μA
nA
mV
mA
8.5
10.5
μs
10
12.5
ns
Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device.
Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using
statistical quality control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not specified on shipped
production material.
Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Positive current corresponds to current flowing into the device.
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2.7V ELECTRICAL CHARACTERISTICS (1) (continued)
Unless otherwise specified, all limits are specified for TA = 25°C, V+ = 2.7V, V− = 0V, and VCM = V+/2, VO= V−. Boldface limits
apply at the temperature extremes.
Symbol
tfall
Parameter
Fall Time
5V ELECTRICAL CHARACTERISTICS
Conditions
Min
(2)
Typ
Overdrive = 10 mV
CL = 30 pF, RL = 1 MΩ
85
Overdrive = 100 mV
CL = 30 pF, RL = 1 MΩ
75
(3)
Max
(2)
Units
ns
(1)
Unless otherwise specified, all limits are specified for TA = 25°C, V+ = 5V, V− = 0V, and VCM = V+/2, VO= V−. Boldface limits
apply at the temperature extremes.
Symbol
IS
Parameter
Supply Current
VOS
Input Offset Voltage
Conditions
Min
(2)
Typ
(3)
Input Offset Average Drift
(5)
IB
Input Bias Current
IOS
Input Offset Current
CMRR
Common Mode Rejection Ratio
612
790
1150
VCM = 4.7V
825
1030
1400
VCM = 0V
±0.3
±6
±8
±1
μV/C
fA
20
fA
VCM Stepped from 0V to 3.9V
72
66
98
VCM Stepped from 4.4V to 5V
73
67
92
VCM Stepped from 0V to 5V
53
49
82
66
63
82
CMVR
Input Common-Mode Voltage Range
CMRR ≥ 40 dB
AV
Voltage Gain
VO
Output Swing High
(1)
(2)
(3)
(4)
(5)
mV
−400
V+ = 1.8V to 5.5V, VCM = 0V
Output Current
±5
±7
nA
VCM = 4.5V
Power Supply Rejection Ratio
IOUT
Units
(4)
See
PSRR
Output Swing Low
(2)
VCM = 0.3V
VCM = 5V
TCVOS
Max
−0.1
dB
dB
5.1
120
IO = 500 µA
4.9
4.86
4.94
IO = 1 mA
4.82
4.77
4.89
V
IO = −500 µA
43
90
130
IO = −1 mA
88
170
230
Source
VO = V+/2
13.0
7.5
17
Sink
VO = V+/2
14.5
8.5
19
V
dB
mV
mA
Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device.
Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using
statistical quality control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not specified on shipped
production material.
Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Positive current corresponds to current flowing into the device.
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5V ELECTRICAL CHARACTERISTICS (1) (continued)
Unless otherwise specified, all limits are specified for TA = 25°C, V+ = 5V, V− = 0V, and VCM = V+/2, VO= V−. Boldface limits
apply at the temperature extremes.
Symbol
trise
tfall
Parameter
Conditions
Min
(2)
(3)
Typ
Propagation Delay
(High to Low)
Overdrive = 10 mV
18
Overdrive = 100 mV
7.7
Propagation Delay
(Low to High)
Overdrive = 10 mV
30
Overdrive = 100 mV
12
Rise Time
Overdrive = 10 mV
CL = 30 pF, RL = 1 MΩ
100
Overdrive = 100 mV
CL = 30 pF, RL = 1 MΩ
100
Overdrive = 10 mV
CL = 30 pF, RL = 1 MΩ
115
Overdrive = 100 mV
CL = 30 pF, RL = 1 MΩ
95
Fall Time
Max
(2)
Units
μs
13.5
16
μs
15
20
ns
ns
CONNECTION DIAGRAM
Figure 3. SC70/SOT-23 (Top View)
Simplified Schematic Diagram
VCC
+
-
INVERTERS
INN
OUTPUT
INP
+
-
GND
6
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TYPICAL PERFORMANCE CHARACTERISTICS
At TJ = 25°C unless otherwise specified.
900
Supply Current vs. Supply Voltage
Supply Current vs. Common Mode Input
900
VCM = 0.8V
+
V = 1.8V
850
85°C
700
600
SUPPLY CURRENT (nA)
SUPPLY CURRENT (nA)
800
25°C
500
-40°C
400
300
200
800
85°C
750
25°C
700
650
-40°C
600
550
100
500
0
0
1
2
3
4
5
450
6
0
0.5
SUPPLY VOLTAGE (V)
1.5
2
COMMON MODE INPUT (V)
Figure 4.
Figure 5.
Supply Current vs. Common Mode Input
900
1
Supply Current vs. Common Mode Input
900
+
+
V = 2.7V
V = 5V
SUPPLY CURRENT (nA)
SUPPLY CURRENT (nA)
850
800
750
700
85°C
650
25°C
600
550
800
85°C
700
25°C
600
-40°C
-40°C
500
450
0
500
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
COMMON MODE INPUT VOLTAGE (V)
COMMON MODE INPUT (V)
Figure 6.
Figure 7.
Short Circuit Sinking Current vs. Supply Voltage
Short Circuit Sourcing Current vs. Supply Voltage
30
25
OUTPUT CURRENT SOURCING (mA)
OUTPUT CURRENT SINKING (mA)
30
-40°C
20
25°C
15
85°C
10
5
0
25
-40°C
20
25°C
15
85°C
10
5
0
1
2
3
4
5
6
SUPPLY VOLTAGE (V)
1
2
3
4
5
6
SUPPLY VOLTAGE (V)
Figure 8.
Figure 9.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TJ = 25°C unless otherwise specified.
Output Voltage Low vs. Sink Current
0.6
VCC = 1.8V
0.5
VCC = 2.7V
0.4
0.3
VCC = 5V
0.2
0.1
0
0
1
2
3
4
5
6
OUTPUT VOLTAGE REFERENCED TO GND (V)
OUTPUT VOLTAGE REFERENCED TO GND (V)
Output Voltage Low vs. Sink Current
0.6
0.5
85°C
0.4
25°C
0.3
-40°C
0.2
0.1
0
0
1
2
Figure 10.
VCC = 2.7V
0.5
0.4
VCC = 5V
0.2
0.1
0
0
1
2
3
4
5
6
85°C
0.5
25°C
0.4
-40°C
0.3
0.2
0.1
0
0
1
2
5
6
Propagation Delay vs. Supply Voltage
25
VOD = 20 mV
VOD = 20 mV
VCM = V /2
85°C
PROPAGATION DELAY L-H (Ps)
+
PROPAGATION DELAY H-L (Ps)
4
Figure 13.
Propagation Delay vs. Supply Voltage
25°C
11
10
-40°C
9
8
7
+
VCM = V /2
85°C
20
25°C
15
-40°C
10
5
6
1
2
3
4
5
6
1
2
3
4
5
6
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 14.
8
3
SOURCE CURRENT (mA)
Figure 12.
12
6
0.6
SOURCE CURRENT (mA)
13
5
Output Voltage High vs. Source Current
OUTPUT VOLTAGE REFERENCED TO VCC (V)
OUTPUT VOLTAGE REFERENCED TO VCC (V)
Output Voltage High vs. Source Current
0.3
4
Figure 11.
0.6
VCC = 1.8V
3
SINK CURRENT (mA)
SINK CURRENT (mA)
Figure 15.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TJ = 25°C unless otherwise specified.
Propagation Delay vs. Overdrive
Propagation Delay vs. Overdrive
15
18
13
tPD L-H
8
1
10
12
11
85°C
10
9
25°C
8
-40°C
7
6
5
100
VCM = 0.5V
13
tPD H-L
3
+
V = 1.8V
14
PROPAGATION DELAY L-H (Ps)
PROPAGATION DELAY (Ps)
+
V = 1.8V
TA = 25°C
1000
0
100
200
OVERDRIVE (mV)
Figure 16.
Propagation Delay vs. Overdrive
V = 2.7V
VCM = 1.3V
11
10
9
85°C
8
25°C
7
-40°C
6
5
0
100
200
300
400
PROPAGATION DELAY L-H (Ps)
PROPAGATION DELAY L-H (Ps)
+
V = 1.8V
12
VCM = 0.5V
16
14
12
85°C
10
25°C
6
500
0
100
200
500
V = 5V
VCM = 2.5V
24
19
tPD L-H
14
9
Propagation Delay vs. Overdrive
30
+
PROPAGATION DELAY L-H (Ps)
PROPAGATION DELAY (Ps)
400
Figure 19.
Propagation Delay vs. Overdrive
+
V = 5.0V
28
VCM = 4.5V
26
24
22
85°C
20
25°C
18
-40°C
16
85°C
14
12
tPD H-L
4
10
300
OVERDRIVE (mV)
Figure 18.
29
25°C
-40°C
8
OVERDRIVE (mV)
34
500
Propagation Delay vs. Overdrive
18
+
13
400
Figure 17.
14
4
300
OVERDRIVE (mV)
10
100
1000
10000
OVERDRIVE (mV)
0
100
200
300
400
500
OVERDRIVE (mV)
Figure 20.
Figure 21.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TJ = 25°C unless otherwise specified.
Propagation Delay vs. Overdrive
Propagation Delay vs. Resistive Load
12
+
32
V = 5V
30
VCM = 0.5V
PROPAGATION DELAY (Ps)
PROPAGATION DELAY L-H (Ps)
34
28
26
24
85°C
22
20
25°C
18
-40°C
-40°C
16
14
tPDL-H
10
+
V = 5V
8
tPDH-L
tPDL-H
6
+
tPDH-L
V = 1.8V
12
4
10
0
100
200
300
400
500
10
100
1000
RESISTIVE LOAD (k:)
Figure 22.
Figure 23.
IBIAS vs. VCM
20
1
OVERDRIVE (mV)
IBIAS vs. VCM
80
V+ = 2.7V
+
V = 1.8V
40
IBIAS (fA)
IBIAS (fA)
0
-20
-40
0
-40
-60
-80
0.3
0
0.6
0.9
1.2
1.5
1.8
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
VCM (V)
800
VCM (V)
Figure 24.
Figure 25.
IBIAS vs. VCM
Propagation Delay vs. Common Mode Input
12
+
PROPAGATION DELAY L-H (Ps)
V = 5V
IBIAS (fA)
400
0
-400
-800
VOD = 20 mV
11.5
+
V = 1.8V
85°C
11
10.5
10
25°C
9.5
-40°C
9
8.5
8
7.5
-1200
0
1
2
3
4
5
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
COMMON MODE VOLTAGE (V)
VCM (V)
Figure 26.
10
10000
Figure 27.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TJ = 25°C unless otherwise specified.
Propagation Delay vs. Common Mode Input
Propagation Delay vs. Common Mode Input
13
VOD = 20 mV
14.5
+
V = 2.7V
85°C
14
13.5
13
25°C
12.5
12
-40°C
11.5
VOD = 20 mV
+
PROPAGATION DELAY H-L (Ps)
PROPAGATION DELAY L-H (Ps)
15
11
V = 5V
12
85°C
11
25°C
10
-40°C
10.5
9
10
0
0.5
1
1.5
2
2.5
0
3
1
2
COMMON MODE VOLTAGE (V)
Figure 28.
4
5
Figure 29.
Propagation Delay vs. Common Mode Input
Offset Voltage vs. Common Mode Input
1400
24
+
85°C
V = 5V
1200
23
OFFSET VOLTAGE (PV)
PROPAGATION DELAY L-H (Ps)
3
COMMON MODE INPUT VOLTAGE (V)
22
25°C
21
20
-40°C
19
85°C
1000
18 VOD = 20 mV
25°C
800
600
-40°C
400
200
+
17
V = 5V
0
1
2
3
4
5
0
0
1
2
3
4
5
COMMON MODE VOLTAGE (V)
COMMON MODE VOLTAGE (V)
Figure 30.
Figure 31.
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APPLICATION INFORMATION
Low supply current and fast propagation delay distinguish the LPV7215Q from other low power comparators.
INPUT STAGE
The LPV7215Q has rail-to-rail input common mode voltage range. It can operate at any differential input voltage
within this limit as long as the differential voltage is greater than zero. A differential input of zero volts may result
in oscillation.
The differential input stage of the comparator is a pair of PMOS and NMOS transistors, therefore, no current
flows into the device. The input bias current measured is the leakage current in the MOS transistors and input
protection diodes. This low bias current allows the comparator to interface with a variety of circuitry and devices
with minimal concern about matching the input resistances.
The input to the comparator is protected from excessive voltage by internal ESD diodes connected to both supply
rails. This protects the circuit from both ESD events, as well as signals that significantly exceed the supply
voltages. When this occurs the ESD protection diodes will become forward biased and will draw current into
these structures, resulting in no input current to the terminals of the comparator. Until this occurs, there is
essentially no input current to the diodes. As a result, placing a large resistor in series with an input that may be
exposed to large voltages, will limit the input current but have no other noticeable effect.
OUTPUT STAGE
The LPV7215Q has a MOS push-pull rail-to-rail output stage. The push-pull transistor configuration of the output
keeps the total system power consumption to a minimum. The only current consumed by the LPV7215Q is the
less than 1 µA supply current and the current going directly into the load. No power is wasted through the pull-up
resistor when the output is low. The output stage is specifically designed with deadtime between the time when
one transistor is turned off and the other is turned on (break-before-make) in order to minimize shoot through
currents. The internal logic controls the break-before-make timing of the output transistors. The break-beforemake delay varies with temperature and power condition.
OUTPUT CURRENT
Even though the LPV7215Q uses less than 1 µA supply current, the outputs are able to drive very large currents.
The LPV7215Q can source up to 17 mA and can sink up to 19 mA, when operated at 5V supply. This large
current handling capability allows driving heavy loads directly.
RESPONSE TIME
Depending upon the amount of overdrive, the propagation delay will be typically 6 to 30 µs. The curves showing
propagation delay vs. overdrive in the TYPICAL PERFORMANCE CHARACTERISTICS section shows the delay
time when the input is preset with 100 mV across the inputs and then is driven the other way by 10 mV to 500
mV.
The output signal can show a step during switching depending on the load. A fast RC time constant due to both
small capacitive and resistive loads will show a significant step in the output signal. A slow RC time constant due
to either a large resistive or capacitive load will have a clipped corner on the output signal. The step is observed
more prominently during a falling transition from high to low.
The plot in Figure 32 shows the output for single 5V supply with a 100 kΩ resistor. The step is at 1.3V.
12
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5
4
VOUT (V)
3
2
1
0
TIME (2 Ps/DIV)
Figure 32. Output Signal without Capacitive Load
The plot in Figure 33 shows the output signal when a 20 pF capacitor is added as a load. The step is at about
2.5V.
5
4
VOUT (V)
3
2
1
0
TIME (2 Ps/DIV)
Figure 33. Output Signal with 20 pF Load
CAPACITIVE AND RESISTIVE LOADS
The propagation delay is not affected by capacitive loads at the output of the LPV7215Q. However, resistive
loads slightly affect the propagation delay on the falling edge by a reduction of almost 2 µs depending on the
load resistance value.
NOISE
Most comparators have rather low gain. This allows the output to spend time between high and low when the
input signal changes slowly. The result is that the output may oscillate between high and low when the
differential input is near zero. The exceptionally high gain of this comparator, 120 dB, eliminates this problem.
Less than 1 µV of change on the input will drive the output from one rail to the other rail. If the input signal is
noisy, the output cannot ignore the noise unless some hysteresis is provided by positive feedback. (See section
on adding hysteresis.)
LAYOUT/BYPASS CAPACITORS
Proper grounding and the use of a ground plane will help to ensure the specified performance of the LPV7215Q.
Minimizing trace lengths, reducing unwanted parasitic capacitance and using surface-mount components will also
help.
Comparators are very sensitive to input noise. To minimize supply noise, power supplies should be capacitively
decoupled by a 0.01 µF ceramic capacitor in parallel with a 10 µF electrolytic capacitor.
HYSTERESIS
In order to improve propagation delay when low overdrive is needed hysteresis can be added.
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INVERTING COMPARATOR WITH HYSTERESIS
The inverting comparator with hysteresis requires a three resistor network that is referenced to the supply voltage
V+ of the comparator as shown in Figure 34. When VIN at the inverting input is less than VA, the voltage at the
non-inverting node of the comparator (VIN < VA), the output voltage is high (for simplicity assume VO switches as
high as V+). The three network resistors can be represented as R1//R3 in series with R2.
The lower input trip voltage VA1 is defined as
VA1 = VCCR2 / ((R1//R3) + R2)
When VIN is greater than VA, the output voltage is low or very close to ground. In this case the three network
resistors can be presented as R2//R3 in series with R1.
The upper trip voltage VA2 is defined as
VA2 = VCC (R2//R3) / ((R1+ (R2//R3)
The total hysteresis provided by the network is defined as ΔVA = VA1 - VA2
'VA =
+VCCR1R2
R 1R 2 + R 1R 3 + R 2R 3
Figure 34. Inverting Comparator with Hysteresis
NON-INVERTING COMPARATOR WITH HYSTERESIS
A non-inverting comparator with hysteresis requires a two resistor network, and a voltage reference (VREF) at the
inverting input. When VIN is low, the output is also low. For the output to switch from low to high, VIN must rise up
to VIN1 where VIN1 is calculated by.
VREF (R1 + R2)
VIN1 =
R2
As soon as VO switches to VCC, VA will step to a value greater than VREF, which is given by
14
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VA = VIN +
SNOSAI6I – SEPTEMBER 2005 – REVISED APRIL 2013
(VCC-VIN1) R1
R1 + R 2
To make the comparator switch back to it’s low state, VIN must equal VREF before VA will again equal VREF. VIN2
can be calculated by
VREF (R1 + R2) ± VCC R1
VIN2 =
R2
The hysteresis of this circuit is the difference between VIN1 and VIN2.
ΔVIN = VCCR1/R2
VCC
-
VREF
VA
VIN
VO
+
R1
RL
R2
Figure 35. Non-Inverting Comparator with Hysteresis
ZERO CROSSING DETECTOR
In a zero crossing detector circuit, the inverting input is connected to ground and the non-inverting input is
connected to a 100 mVPP AC signal. As the signal at the non-inverting input crosses 0V, the comparator’s output
changes state.
Figure 36. Zero Crossing Detector
To improve switching times and to center the input threshold to ground a small amount of positive feedback is
added to the circuit. The voltage divider, R4 and R5, establishes a reference voltage, V1, at the positive input. By
making the series resistance, R1 plus R2 equal to R5, the switching condition, V1 = V2, will be satisfied when VIN
= 0. The positive feedback resistor, R6, is made very large with respect to R5 (R6 = 2000 R5). The resultant
hysteresis established by this network is very small (ΔV1 < 10 mV) but it is sufficient to insure rapid output
voltage transitions. Diode D1 is used to insure that the inverting input terminal of the comparator never goes
below approximately −100 mV. As the input terminal goes negative, D1 will forward bias, clamping the node
between R1 and R2 to approximately −700 mV. This sets up a voltage divider with R2 and R3 preventing V2 from
going below ground. The maximum negative input overdrive is limited by the current handling ability of D1.
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VCC
R3
R1
R4
R2
-
VIN
V2
D1
VO
V1
+
R6
R5
Figure 37. Zero Crossing Detector with Positive Feedback
THRESHOLD DETECTOR
Instead of tying the inverting input to 0V, the inverting input can be tied to a reference voltage. As the input on
the non-inverting input passes the VREF threshold, the comparator’s output changes state. It is important to use a
stable reference voltage to ensure a consistent switching point.
Figure 38. Threshold Detector
CRYSTAL OSCILLATOR
A simple crystal oscillator using the LPV7215Q is shown in Figure 39. Resistors R1 and R2 set the bias point at
the comparator’s non-inverting input. Resistors, R3 and R4 and capacitor C1 set the inverting input node at an
appropriate DC average level based on the output. The crystal’s path provides resonant positive feedback and
stable oscillation occurs. The output duty cycle for this circuit is roughly 50%, but it is affected by resistor
tolerances and to a lesser extent by the comparator offset.
Figure 39. Crystal Oscillator
IR RECEIVER
The LPV7215Q can also be used as an infrared receiver. The infrared photo diode creates a current relative to
the amount of infrared light present. The current creates a voltage across RD. When this voltage level crosses
the voltage applied by the voltage divider to the inverting input, the output transitions.
16
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Figure 40. IR Receiver
SQUARE WAVE GENERATOR
A typical application for a comparator is as a square wave oscillator. The circuit in Figure 41 generates a square
wave whose period is set by the RC time constant of the capacitor C1 and resistor R4. The maximum frequency
is limited by the large signal propagation delay of the comparator and by the capacitive loading at the output,
which limits the output slew rate.
R4
C1
VC
VO
+
R1
+
VA
R3
V
+
R2
V
0
Figure 41. Square Wave Oscillator
Consider the output of Figure 41 to be high to analyze the circuit. That implies that the inverted input (VC) is
lower than the non-inverting input (VA). This causes the C1 to be charged through R4, and the voltage VC
increases until it is equal to the non-inverting input. The value of VA at this point is
VCC.R2
VA1 =
R2 + R1||R3
If R1 = R2 = R3 then VA1 = 2VCC/3
At this point the comparator switches pulling down the output to the negative rail. The value of VA at this point is
VCC (R2||R3)
VA2 =
R1 + (R2||R3)
If R1 = R2 = R3 then VA2 = VCC/3
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The capacitor C1 now discharges through R4, and the voltage VC decreases until it is equal to VA2, at which point
the comparator switches again, bringing it back to the initial stage. The time period is equal to twice the time it
takes to discharge C1 from 2VCC/3 to VCC/3, which is given by R4C1·ln2. Hence the formula for the frequency is:
F = 1/(2·R4·C1·ln2)
WINDOW DETECTOR
A window detector monitors the input signal to determine if it falls between two voltage levels.
The comparator outputs A and B are high only when
VREF1 < VIN < VREF2 “or within the window.”
where these are defined as
VREF1 = R3/(R1+R2+R3) * V+
VREF2 = (R2+R3)/(R1+R2+R3) * V+
(1)
Others names for window detectors are: threshold detector, level detectors, and amplitude trigger or detector.
V
+
R1
+
VREF2
A
OUTPUT A
B
OUTPUT B
R2
VIN
+
-
VREF1
R3
Figure 42. Window Detector
VIN
V
OUTPUT B
+
VREF2
VREF1
OUTPUT A
BOTH OUTPUTS
ARE HIGH
Figure 43. Window Detector Output Signal
18
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REVISION HISTORY
Changes from Revision H (April 2013) to Revision I
•
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 18
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PACKAGE OPTION ADDENDUM
www.ti.com
7-Oct-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
LPV7215MF/NOPB
ACTIVE
SOT-23
DBV
5
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
C30A
LPV7215MFX/NOPB
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
C30A
LPV7215MG/NOPB
ACTIVE
SC70
DCK
5
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
C37
LPV7215MGX/NOPB
ACTIVE
SC70
DCK
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
C37
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
7-Oct-2013
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
LPV7215MF/NOPB
SOT-23
LPV7215MFX/NOPB
LPV7215MG/NOPB
LPV7215MGX/NOPB
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
3.2
1.4
4.0
8.0
Q3
DBV
5
1000
178.0
8.4
SOT-23
DBV
5
3000
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
SC70
DCK
5
1000
178.0
8.4
2.25
2.45
1.2
4.0
8.0
Q3
SC70
DCK
5
3000
178.0
8.4
2.25
2.45
1.2
4.0
8.0
Q3
Pack Materials-Page 1
3.2
B0
(mm)
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LPV7215MF/NOPB
SOT-23
DBV
5
1000
210.0
185.0
35.0
LPV7215MFX/NOPB
SOT-23
DBV
5
3000
210.0
185.0
35.0
LPV7215MG/NOPB
SC70
DCK
5
1000
210.0
185.0
35.0
LPV7215MGX/NOPB
SC70
DCK
5
3000
210.0
185.0
35.0
Pack Materials-Page 2
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