DGNJDZ MCR100-8 To-92 plastic package weight approx. 0.19g Datasheet

MCR100-3 … MCR100-8
G
K
A
TO-92 Plastic Package
Weight approx. 0.19g
MAXIMUM RATINGS (TJ=25°C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking
Voltage, Note 1
MCR100-3
(TJ=25 to 125°C, RGK=1KΩ)
MCR100-4
VDRM
200
MCR100-5
and
300
MCR100-6
VRRM
400
100
MCR100-7
500
MCR100-8
600
Forward Current RMS
Volts
IT(RMS)
0.8
Amps
ITSM
10
Amps
It
2
0.415
As
PGM
0.1
Watts
PGF(AV)
0.01
Watt
IGFM
1
Amp
VGRM
5
Volts
Operating Junction Temperature Range @ Rated VRRM and VDRM
TJ
-40 to +125
°C
Storage Temperature Range
Ts
-40 to +150
°C
(All Conduction Angles)
Peak Forward Surge Current, TA=25°C
(1/2 Cycle, Sine Wave, 60Hz)
Circuit Fusing (t=8.3ms)
Peak Gate Power - Forward, TA=25°C
Average Gate Power - Forward, TA=25°C
Peak Gate Current - Forward, TA=25°C
(300μs,120PPS)
Peak Gate Voltage - Reverse
2
Note 1. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode.
MCR100-3 … MCR100-8
CHARACTERISTICS (TC=25°C, RGK=1KΩ unless otherwise noted.)
Characteristic
Peak Forward or Reverse Blocking Current
Symbol
Min
Max
Unit
-
10
μA
VTM
-
1.7
Volts
IGT
-
200
μA
VGT
-
0.8
Volts
IH
-
5
mA
IDRM,IRRM
(VAK=Rated VDRM or VRRM)
Forward “On” Voltage
(ITM=1A Peak @TA=25°C)
Gate Trigger Current(Continuous dc),Note 1
(Anode Voltage=7Vdc,RL=100 Ohms)
Gate Trigger Voltage(Continuous dc)
(Anode Voltage=7Vdc,RL=100 Ohms)
(Anode Voltage=Rated VDRM,RL=100 Ohms)
Holding Current
(Anode Voltage=7Vdc,initiating current=20mA)
Note 1. RGK current is not included in measurement.
MCR100-3 … MCR100-8
Gate Trigger Voltage (volts)
90
80
70
60
50
40
30
20
-40
-25
5
-10
20
35
50
65
80
95
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25
10
110
35
50
65
80
95
110
Figure 2. Typical Gate Trigger Voltage
Versus Junction Temperature
Latching Current (µA)
Holding Current (µA)
20
1000
1000
100
10
5
-10
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Figure 1. Typical Gate Trigger Curent Versus
Junction Temperature
100
10
-40 -25
-10
5
20
35
50
65
80
95
110
-40 -25
-10
20
5
35
50
65
80
95
110
TJ, Junction Temperature (°C)
Figure 4. Typical Latching Curent Versus
Junction Temperature
TJ, Junction Temperature (°C)
Figure 3. Typical Holding Curent Versus
Junction Temperature
TC, Maximum Allowable Case
Temperature (°C)
10
120
110
100
90
DC
80
180°C
70
60
50
40
0
0.1
30°C
0.2
60°C
0.3
90°C
0.4
IT,Instantaneous On-State
Current (AMPS)
Gate Trigger Current (µA)
100
MAXIMUM @ TJ=25°C
MAXIMUM @ TJ=110°C
1
0.1
0.5
0.5 0.8
1.1
1.4
1.7
2.0
2.3
2.6
2.9
3.2
3.5
IT(RMS), RMS On-State Current (AMPS)
VT, Instantaneous On-State Voltage (volts)
Figure 5. Typical RMS Current Derating
Figure 6. Typical On-State Characteristics
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