Transient Voltage Suppressors for ESD Protection ESDXXV88D-CDN Description DFN-1006DN The ESDXXV88D-CDN is ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from over-voltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and EFT (electrical fast transients). Feature Functional Diagram u 250 Watts Peak Pulse Power per Line (tp=8/20μs) u Protects one birectional I/O line u Low clamping voltage u Working voltages :3.3V - 36V u Low leakage current u IEC61000-4-2(ESD)±30kV(air),±30kV(contact):3.3V-15V u IEC61000-4-2(ESD)±25kV(air),±15kV(contact):18V-36V u IEC61000-4-4 (EFT) 40A (5/50ηs) Applications u Cell Phone Handsets and Accessories u Microprocessor based equipment u Personal Digital Assistants (PDA’s) u Notebooks, Desktops, and Servers u Portable Instrumentation u Peripherals u Pagers Mechanical Data u DFN1006DN (1.0x0.6x0.5mm) Package u Molding Compound Flammability Rating : UL 94V-0 u Weight 0.5 Milligrams (Approximate) u Quantity Per Reel : 10,000pcs u Reel Size : 7 inch u Lead Finish : Lead Free Mechanical Characteristics Symbol Parameter Value Units PPP Peak Pulse Power (tp=8/20μs waveform) 250 W TJ Operating Junction Temperature Range -55 to +150 ºC Storage Temperature Range -55 to +150 ºC 260 ºC TSTG TL Soldering Temperature, t max = 10s Electrical Characteristics (@ 25℃ Unless Otherwise Specified ) Device Marking VRWM (V) (Max.) VB (V) (Min.) IT (mA) VC @1A (Max.) (Max.) ESD3.3V88D-CDN D3 3.3 4.5 1 - ESD05V88D-CDN D5 5.0 6.0 1 - Part Number UN Semiconductor Co., Ltd. Revision December 18, 2013 (@A) IR (μA) (Max.) C (pF) (Typ.) 14.0 15.0 30 95 18.0 14.0 1 60 VC www.unsemi.com.tw 1/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors for ESD Protection ESDXXV88D-CDN ESD08V88D-CDN D8 8.0 8.5 1 - 22.0 10.0 1 45 ESD12V88D-CDN ESD15V88D-CDN ESD18V88D-CDN ESD24V88D-CDN ESD36V88D-CDN DD DE DF DH DN 12.0 15.0 18.0 24.0 36.0 13.3 16.7 19.5 26.7 40.0 1 1 1 1 1 - 30.0 37.0 47.0 55.0 75.0 7.0 6.0 4.0 3.0 2.0 1 1 1 1 1 27 25 25 24 20 Characteristic Curves Fig1. 8/20μs Pulse Waveform Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) 100% tr 100 Peak Value IPP Percent of Peak Pulse Current % IPP - Peak Pulse Current - % of IPP 120 80 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 10% tr = 0.7~1ns Time (ns) 30ns 30 60ns t - Time (μs) Fig3. 90% Power Derating Curve 100 90 % of Rated Power 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 180 200 Ambient Temperature – TA (ºC) UN Semiconductor Co., Ltd. Revision December 18, 2013 www.unsemi.com.tw 2/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors for ESD Protection ESDXXV88D-CDN Characteristic Curves Fig4. Fig5. ESD Clamping (+8KV Contac per IEC61000-4-2) ESD Clamping (-8KV Contac per IEC61000-4-2) DFN1006 Package Outline & Dimensions Symbol Millimeters Inches Min. Max. Min. Max. A 0.400 0.500 0.016 0.020 A1 0.000 0.050 0.000 0.002 D 0.550 0.650 0.022 0.026 E 0.950 1.0650 0.037 0.041 b 0.400 0.600 0.016 0.024 e L L1 0.650 TYP 0.150 0.350 0.050 REF 0.026 TYP 0.006 0.014 0.002 REF Soldering Footprint UN Semiconductor Co., Ltd. Revision December 18, 2013 www.unsemi.com.tw 3/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.