STMicroelectronics M29W040-200N5R 4 mbit 512kb x8, uniform block low voltage single supply flash memory Datasheet

M29W040
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
NOT FOR NEW DESIGN
M29W040 is replaced by the M29W040B
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 100ns
BYTE PROGRAMMING TIME: 12µs typical
ERASE TIME
– Block: 1.5 sec typical
– Chip: 2.5 sec typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Data Polling and Toggle bits Protocol for
P/E.C. Status
MEMORY ERASE in BLOCKS
– 8 Uniform Blocks of 64 KBytes each
– Block Protection
– Multiblock Erase
ERASE SUSPEND and RESUME MODES
LOW POWER CONSUMPTION
– Read mode: 8mA typical (at 12MHz)
– Stand-by mode: 20µA typical
– Automatic Stand-by mode
POWER DOWN SOFTWARE COMMAND
– Power-down mode: 1µA typical
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E3h
PLCC32 (K)
TSOP32 (NZ)
8 x 14mm
Figure 1. Logic Diagram
Table 1. Signal Names
A0-A18
Address Inputs
DQ0-DQ7
Data Input / Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
VCC
Supply Voltage
VSS
Ground
TSOP32 (N)
8 x 20mm
VCC
19
8
A0-A18
W
DQ0-DQ7
M29W040
E
G
VSS
AI02074
November 1999
This is information on a product still in productionbut not recommended for new designs.
1/31
M29W040
Figure 2B. TSOP Pin Connections
A12
A15
A16
A18
VCC
W
A17
Figure 2A. LCC Pin Connections
1 32
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
9
M29W040
25
A14
A13
A8
A9
A11
G
A10
E
DQ7
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
17
AI02075
A11
A9
A8
A13
A14
A17
W
VCC
A18
A16
A15
A12
A7
A6
A5
A4
1
8
9
16
32
M29W040
(Normal)
25
24
17
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
AI02076
Figure 2C. TSOP Reverse Pin Connections
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
32
1
8
9
16
M29W040
(Reverse)
25
24
17
AI02077
2/31
A11
A9
A8
A13
A14
A17
W
VCC
A18
A16
A15
A12
A7
A6
A5
A4
DESCRIPTION
The M29W040 is a non-volatile memory that may
be erased electrically at the block level, and programmed Byte-by-Byte.
The interface is directly compatible with most microprocessors. PLCC32, TSOP32 (8 x 20mm)and
TSOP32 (8 x 14mm) packages are available. Both
normal and reverse pin outs are available for the
TSOP32 (8 x 20mm) package.
Organisation
The FlashMemory organisationis 512K x8 bits with
Address lines A0-A18 and Data Inputs/Outputs
DQ0-DQ7. Memory control is provided by Chip
Enable, Output Enable and Write Enable Inputs.
Erase and Program are performed through the
internal Program/Erase Controller (P/E.C.).
Data Outputs bits DQ7 and DQ6 provide polling or
toggle signals during Automatic Program or Erase
to indicate the Ready/Busy state of the internal
Program/Erase Controller.
Memory Blocks
Erasure of the memory is in blocks. There are 8
uniform blocks of 64 Kbytes each in the memory
address space. Each block can be programmed
and erased over 100,000 cycles. Each uniform
M29W040
Table 2. Absolute Maximum Ratings (1)
Symbol
TA
Parameter
Ambient Operating Temperature
Value
(3)
Unit
–40 to 85
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
Storage Temperature
–65 to 150
°C
Input or Output Voltages
–0.6 to 5
V
Supply Voltage
–0.6 to 5
V
A9 Voltage
–0.6 to 13.5
V
VIO
(2)
VCC
VA9
(2)
Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings”
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other
relevant quality documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns.
3. Depends on range.
block may separately be protected and unprotected against program and erase. Block erasure
may be suspended, while data is read from other
blocks of the memory, and then resumed.
Bus Operations
Seven operations can be performed by the appropriate bus cycles, Read Array, Read Electronic
Signature, Output Disable, Standby,Protect Block,
Unprotect Block, and Write the Command of an
Instruction.
Command Interface
Command Bytes can be written to a Command
Interface (C.I.) latch to perform Reading (from the
Array or Electronic Signature), Erasure or Programming. For added data protection, command
execution starts after 4 or 6 command cycles. The
first, second, fourth and fifth cycles are used to
input a code sequence to the Command Interface
(C.I.). This sequence is equal for all P/E.C. instructions. Command itself and its confirmation - if it
applies - are given on the third and fourth or sixth
cycles.
Instructions
Eight instructions are defined to perform Reset,
Read Electronic Signature, Auto Program, Block
Auto Erase, Chip Auto Erase, Block Erase Suspend, Block Erase Resume and Power Down. The
internal Program/EraseController (P/E.C.) handles
all timing and verification of the Program and Erase
instructions and provides Data Polling, Toggle, and
Status data to indicate completion of Program and
Erase Operations.
Instructions are composed of up to six cycles. The
first two cycles input a code sequence to the Command Interface which is common to all P/E.C.
instructions (see Table 7 for Command Descriptions). The third cycle inputs the instruction set up
command instruction to the Command Interface.
Subsequentcycles output Signature,Block Protection or the addressed data for Read operations.
For added data protection, the instructions for program, and block or chip erase require further command inputs. For a Program instruction, the fourth
command cycle inputs the address and data to be
programmed. For an Erase instruction (block or
chip), the fourth and fifth cycles input a further code
sequence before the Erase confirm command on
the sixth cycle. Byte programming takes typically
12µs while erase is performed in typically 1.5 second.
Erasure of a memory block may be suspended, in
order to read data from another block, and then
resumed. Data Polling, Toggle and Error data may
be read at any time, including during the programming or erase cycles, to monitor the progress of
the operation.When power is first applied or if VCC
falls below VLKO , the command interface is reset to
Read Array.
3/31
M29W040
Table 3. Operations
Operation
E
G
W
DQ0 - DQ7
Read
VIL
VIL
VIH
Data Output
Write
VIL
VIH
VIL
Data Input
Output Disable
VIL
VIH
VIH
Hi-Z
Standby
VIH
X
X
Hi-Z
Note: X = VIL or VIH
Table 4. Electronic Signature
Code
E
G
W
A0
A1
A6
A9
Other
Addresses
DQ0 - DQ7
Manufact. Code
VIL
VIL
VIH
VIL
VIL
VIL
VID
Don’t Care
20h
Device Code
VIL
VIL
VIH
VIH
VIL
VIL
VID
Don’t Care
E3h
Table 5. Block Protection Status
E
G
W
A0
A1
A6
A16
A17
A18
Other
Addresses
DQ0 - DQ7
Protected Block
VIL
VIL
VIH
VIL
VIH
VIL
SA
SA
SA
Don’t Care
01h
Unprotected Block
VIL
VIL
VIH
VIL
VIH
VIL
SA
SA
SA
Don’t Care
00h
Code
Note: SA = Address of block being checked
DEVICE OPERATION
Signal Descriptions
Address Inputs (A0-A18). The address inputs for
the memory array are latched during a write operation. The A9 address input is used also for the
Electronic Signature read and Block Protect verification. When A9 is raised to VID, either a Read
Manufacturer Code, Read Device Code or Verify
Block Protection is enabled dependingon the combination of levels on A0, A1 and A6. When A0, A1
and A6 are Low, the ElectronicSignature Manufacturer code is read, when A0 is High and A1 and A6
are Low, the Device code is read, and when A1 is
High and A0 and A6 are low, the Block Protection
Status with protect/unprotect algorithm is read for
the block addressed by A16, A17, A18.
Data Input/Outputs (DQ0-DQ7). The data input is
a byte to be programmed or a command written to
the C.I. Both are latched when Chip Enable E and
Write Enable W are active. The data output is from
the memory Array, the Electronic Signature, the
Data Polling bit (DQ7), the Toggle Bit (DQ6), the
Error bit (DQ5) or the Erase Timer bit (DQ3). Ouputs are valid when Chip Enable E and Output
Enable G are active. The output is high impedance
4/31
when the chip is deselected or the outputs are
disabled.
Chip Enable (E). The Chip Enable activates the
memory control logic, input buffers, decoders and
sense amplifiers. E High deselectsthe memory and
reduces the power consumption to the standby
level. E can also be used to control writing to the
command register and to the memory array, while
W remains at a low level. Addresses are then
latchedon the falling edge of E while data is latched
on the rising edge of E. The Chip Enable must be
forced to VID during Block Unprotect operations.
Output Enable (G). The Output Enable gates the
outputs through the data buffers during a read
operation. G must be forced to VID level during
Block Protect and Block Unprotect operations.
Write Enable (W). This input controls writing to the
Command Register and Address and Data latches.
Addressesare latchedon the fallingedge of W, and
Data Inputs are latched on the rising edge of W.
VCC Supply Voltage. The power supply for all
operations (Read, Program and Erase).
VSS Ground. VSS is the reference for all voltage
measurements.
M29W040
Table 6. Instructions (1)
Mne.
Instr.
Cyc.
1+
RST
(3,9)
Read Array/
Reset
1st Cyc. 2nd Cyc. 3rd Cyc. 4th Cyc. 5th Cyc. 6th Cyc.
Addr. (2,6)
Data
3+
RBP
(3)
Read Block
Protection
Addr. (2,6)
Addr. (2,6)
Data
3+
Addr. (2,6)
Addr.
Program
(2,6)
Block Erase
6
Addr.
(2,6)
Data
CE
Chip Erase
6
Addr. (2,6)
Data
ES
Erase
Suspend
1
Addr.
(2,6)
Data
ER
Erase
Resume
1
Addr. (2,6)
Data
PD
(10)
Power
Down
2AAAh
5555h
AAh
55h
F0h
5555h
2AAAh
5555h
AAh
55h
90h
5555h
2AAAh
5555h
AAh
55h
90h
5555h
2AAAh
5555h
AAh
55h
A0h
5555h
2AAAh
5555h
5555h
2AAAh
Block
Address
Additional
Block (7)
AAh
55h
80h
AAh
55h
30h
30h
5555h
2AAAh
5555h
5555h
2AAAh
5555h
AAh
55h
80h
AAh
55h
10h
4
Data
BE
5555h
3+
Data
PG
Read Memory Array until a new write cycle is initiated.
F0h
Data
Read
RSIG (3) Electronic
Signature
X
1
Addr. (2,6)
Data
7th Cyc.
X
Read Memory Array until a new write
cycle is initiated.
Read Electronic Signature until a new
write cycle is initiated. See Note 4.
Read Block Protection until a new write
cycle is initiated. See Note 5.
Program
Address Read Data Polling or Toggle Bit
until Program completes.
Program
Data
Note 8
Read until Toggle stops, then read all the data needed from any
uniform block(s) not being erased then Resume Erase.
B0h
X
Read Data Polling or Toggle Bit until Erase completes or Erase
is suspended another time
30h
5555h
Puts the memory in Power Down mode where power
consumption is reduced to typically less than 1µA
20h
Notes: 1. Command not interpreted in this table will default to read array mode.
2. X = Don’t Care.
3. The first cycle of the RST, RBP or RSIG instruction is followed by read operations to read memory array, Status Register or
Electronic Signature codes. Any number of read cycles can occur after one command cycle.
4. Signature Address bits A0, A1, A6 at VIL will output Manufacturer code (20h). Address bits A0 at V IH and A1, A6 at V IL will output
Device code.
5. Protection Address: A0, A6 at VIL, A1 at VIH and A16, A17, A18 within the uniform block to be checked, will output the
Block Protection status.
6. Address bits A15-A18 are don’t care for coded address inputs.
7. Optional, additional blocks addresses must be entered within a 80µs delay after last write entry, timeout status can be verified
through DQ3 value. When full command is entered, read Data Polling or Toggle bit until Erase is completed or suspended.
8. Read Data Polling or Toggle bit until Erase completes.
9. A wait time of 5µs is necessary after a Reset command, if the memory is in a Block Erase or Power Down status, before
starting any operation.
10. Writing an RST command to the P/E.C. is mandatory prior to any new operation when the memory is in Power Down mode.
5/31
M29W040
Memory Blocks
The memory blocks of the M29W040 are shown in
Figure 3. The memory array is divided in 8 uniform
blocks of 64 Kbytes. Each block can be erased
separately or any combination of blocks can be
erased simultaneously. The Block Erase operation
is managed automaticallyby the P/E.C. The operation can be suspended in order to read from any
other block, and then resumed.
Block Protection provides additional data security.
Each uniform block can be separately protected or
unprotectedagainst Programor Erase. BringingA9
and G to VID initiates protection, while bringing A9,
G and E to VID cancels the protection. The block
affected during protection is addressed by the inputs on A16, A17, and A18. Unprotect operation
affects all blocks.
Operations
Operations are defined as specific bus cycles and
signals which allow Memory Read, Command
Write, Output Disable, Standby, Read Status Bits,
Block Protect/Unprotect, Block Protection Check
and ElectronicSignature Read. They are shown in
Tables 3, 4, 5.
Read. Read operations are used to output the
contents of the Memory Array, the Status Register
or the Electronic Signature. Both Chip Enable E
and Output Enable G must be low in order to read
the output of the memory. The Chip Enable input
also provides power control and shouldbe used for
device selection. Output Enable should be used to
gate dataonto the outputindependentof the device
selection. The data read depends on the previous
command written to the memory (see instructions
RST and RSIG, and Status Bits).
Write. Write operationsare used to give Instruction
Commands to the memory or to latch input data to
be programmed. A write operation is initiated when
Chip Enable E is Low and Write Enable W is Low
with Output Enable G High. Addresses are latched
6/31
on the falling edge of W or E whicheveroccurs last.
Commands and Input Data are latchedon the rising
edge of W or E whichever occurs first.
Output Disable. The data outputs are high impedance when the Output Enable G is High with Write
Enable W High.
Standby. The memory is in standby when Chip
Enable E is High and Program/Erase Controller
P/E.C. is Idle. The power consumption is reduced
to the standby level and the outputs are high impedance, independent of the Output Enable G or
Write Enable W inputs.
Automatic Standby. After 150ns of inactivity and
when CMOS levels are driving the addresses, the
chip automatically enters a pseudo standby mode
where consumption is reduced to the CMOS
standby value, while outputs are still driving the
bus.
Power Down. When the PD command is written
to the P/E.C. the memory enters a power down
status where the power consumption is reduced to
ICC6 (typically less than 1.0µA).
Electronic Signature. Two codes identifying the
manufacturer and the device can be read from the
memory, the manufacturer’s code for STMicroelectronics is 20h, and the device code is E3h for the
M29W040. These codes allow programming
equipment or applications to automatically match
their interface to the characteristics of the particular
manufacturer’s product. The Electronic Signature
is output by a Read operation when the voltage
applied to A9 is at VID and address inputs A1 and
A6 are at Low. The manufacturer code is output
when the Address input A0 is Low and the device
code when this input is High. Other Address inputs
are ignored. The codes are output on DQ0-DQ7.
This is shown in Table 4.
The Electronic Signature can also be read, without
raising A9 to VID by giving the memory the instruction RSIG (see below).
M29W040
Figure 3. Memory Map and Block Address Table
TOP
ADDRESS
BOTTOM
ADDRESS
64K Bytes Block
7FFFFh
70000h
0
64K Bytes Block
6FFFFh
60000h
0
1
64K Bytes Block
5FFFFh
50000h
1
0
0
4FFFFh
40000h
0
1
1
3FFFFh
30000h
0
1
0
2FFFFh
20000h
0
0
1
64K Bytes Block
1FFFFh
10000h
0
0
0
64K Bytes Block
0FFFFh
00000h
A18
A17
A16
1
1
1
1
1
1
AI01362B
Block Protection. Each uniform block can be
separately protected against Program or Erase.
Block Protection provides additional data security,
as it disables all program or erase operations. This
mode is activated when both A9 and G are set to
VID and the block address is applied on A16-A18.
Block Protection is programmed using a Presto F
program like algorithm. Protectionis initiated on the
edge ofW falling to VIL. Then after a delayof 100µs,
the edge of W rising to VIH ends the protection
operation. Protection verify is achieved by bringing
G, E and A6 to VIL while W is at VIH and A9 at VID.
Under these conditions, readingthe data output will
yield 01h if the block defined by the inputs on
A16-A18 is protected. Any attempt to program or
erase a protected block will be ignored by the
device.
Any protected block can be unprotected to allow
updating of bit contents. All blocks must be protected before an unprotect operation. Block Unprotect is activated when A9, G and E are at VID.
The addresses inputs A6, A12, A16 must be maintained at VIH. Block Unprotect is performedthrough
a Presto F Erase like algorithm. Unprotect is initiated by the edge of W falling to VIL. After a delay
of 10ms, the edge of W rising to VIH will end the
unprotection operation. Unprotect verify is
achieved by bringing G and E to VIL while A6 and
Table 7. Commands
Hex Code
Command
10h
Chip Erase Confirm
20h
Power Down
30h
Block Erase Resume/Confirm
50h
Reserved
80h
Set-up Erase
90h
Read Electronic Signature/
Block Protection Status
A0h
Program
B0h
Erase Suspend
F0h
Read Array/Reset
W are at VIH and A9 at VID. In these conditions,
reading the output data will yield 00h if the block
defined by the inputs on A16-A18 has been successfullyunprotected.All combinations of A16-A18
must be addressed in order to ensure that all of the
8 uniform blocks have been unprotected. Block
Protection Status is shown in Table 5.
7/31
M29W040
Table 8. Status Register
DQ
7
6
5
Name
Data
Polling
Toggle Bit
Error Bit
Logic Level
Definition
’1’
Erase Complete
’0’
Erase on going
DQ
Program Complete
DQ
Program on going
Note
Indicates the P/E.C. status, check during
Program or Erase, and on completion
before checking bits DQ5 for Program or
Erase Success.
’-1-0-1-0-1-0-1-’
Erase or Program on going
’-0-0-0-0-0-0-0-’
Program (’0’ on DQ6)
Complete
’-1-1-1-1-1-1-1-’
Erase or Program
(’1’ on DQ6) Complete
’1’
Program or Erase Error
’0’
Program or Erase on going
Successive read output complementary
data on DQ6 while Programming or Erase
operations are going on. DQ6 remain at
constant level when P/E.C. operations are
completed or Erase Suspend is
acknowledged.
This bit is set to ’1’ if P/E.C. has exceded
the specified time limits.
’1’
4
’0’
3
Erase
Time Bit
2
Reserved
1
Reserved
0
Reserved
’1’
Erase Timeout Period Expired
’0’
Erase Timeout Period on
going
P/E.C. Erase operation has started. Only
possible command entry is Erase Suspend
(ES). An additional block to be erased in
parallel can be entered to the P/E.C.
Note: Logic level ’1’ is High, ’0’ is Low. -0-1-0-0-0-1-1-1-0- represent bit value in successive Read operations.
Instructions and Commands
The Command Interface (C.I.) latches commands
written to the memory. Instructions are made up
from one or more commands to perform Read
Array/Reset, Read Electronic Signature, Power
Down, Block Erase, Chip Erase, Program, Block
Erase Suspend and Erase Resume. Commands
are made of address and data sequences. Addresses are latched on the falling edge of W or E
and data is latched on the rising of W or E. The
instructions require from 1 to 6 cycles, the first or
first three of which are always write operations
used to initiate the command. They are followed by
either further write cycles to confirm the first command or execute the command immediately. Command sequencing must be followed exactly. Any
invalid combination of commands will reset the
device to Read Array. The increased number of
cycles has been chosen to assure maximum data
security. Commands are initialised by two preceding coded cycles which unlock the Command Interface. In addition, for Erase, command confirmation
is again preceeded by the two coded cycles.
P/E.C. status is indicated during command execution by Data Polling on DQ7, detectionof Toggle on
8/31
DQ6, or Error on DQ5 and Erase Timer DQ3 bits.
Any read attempt during Program or Erase command executionwill automaticallyoutput those four
bits. The P/E.C. automatically sets bits DQ3, DQ5,
DQ6 and DQ7. Other bits (DQ0, DQ1, DQ2 and
DQ4) are reserved for future use and should be
masked.
Data Polling bit (DQ7). When Programming operations are in progress, this bit outputs the complement of the bit being programmed on DQ7.
During Erase operation, it outputs a ’0’. After completion of the operation,DQ7 will output the bit last
programmed or a ’1’ after erasing. Data Polling is
valid only effective during P/E.C. operation, that is
after the fourth W pulse for programming or after
the sixth W pulse for Erase. It must be performed
at the address being programmed or at an address
within the block being erased. If the byte to be
programmed belongs to a protectedblock the command is ignored. If all the blocks selected for erasure are protected, DQ7 will set to ’0’ for about
100µs, and then return to previous addressed
memory data. See Figure 9 for the Data Polling
flowchart and Figure 10 for the Data Polling waveforms.
M29W040
Table 9. AC Measurement Conditions
Figure 5. AC Testing Load Circuit
Input Rise and Fall Times
≤ 10ns
Input Pulse Voltages
0 to 3V
Input and Output Timing Ref. Voltages
0.8V
1N914
1.5V
Figure 4. AC Testing Input Output Waveform
3.3kΩ
DEVICE
UNDER
TEST
3V
OUT
CL = 30pF or 100pF
1.5V
0V
AI01417
CL includes JIG capacitance
AI01968
Table 10. Capacitance (1) (TA = 25 °C, f = 1 MHz )
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Test Condition
Min
Max
Unit
VIN = 0V
6
pF
VOUT = 0V
12
pF
Note: 1. Sampled only, not 100% tested.
Table 11. DC Characteristics
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C; VCC = 2.7V to 3.6V)
Symbol
Parameter
Test Condition
Min
Max
Unit
0V ≤ VIN ≤ VCC
±1
µA
0V ≤ VOUT ≤ VCC
±1
µA
E = VIL, G = VIH, f = 6MHz
20
mA
E = VIH
0.2
mA
ILI
Input Leakage Current
ILO
Output Leakage Current
ICC1
Supply Current (Read)
ICC2
Supply Current (Standby) TTL
ICC3
Supply Current (Standby) CMOS
E = VCC ± 0.2V
50
µA
ICC4
Supply Current (Program or Erase)
Byte Program,
Block Erase
20
mA
ICC5
Supply Current
Chip Erase in progress
40
mA
ICC6
Power Down Current
E = VCC ± 0.2V
5
µA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7 VCC
VCC + 0.5
V
VOL
Output Low Voltage
0.45
V
VOH
Output High Voltage CMOS
VID
A9 Voltage (Electronic Signature)
IID
A9 Current (Electronic Signature)
VLKO
Supply Voltage (Erase and
Program lock-out)
IOL = 2mA
IOH = –100µA
VCC –0.4
V
IOH = –2.0mA
0.85 VCC
V
11.5
A9 = VID
1.9
12.5
V
50
µA
2.2
V
9/31
M29W040
Table 12A. Read AC Characteristics
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
M29W040
Symbol
Alt
Parameter
-100
Test Condition
-120
Unit
VCC = 3.3V±0.3V
VCC = 3.3V±0.3V
CL = 30pF
Min
tAVAV
tRC
Address Valid to Next Address Valid
E = VIL, G = VIL
tAVQV
tACC
Address Valid to Output Valid
E = VIL, G = VIL
tELQX
(1)
tLZ
Chip Enable Low to Output Transition
G = VIL
tELQV
(2)
tCE
Chip Enable Low to Output Valid
G = VIL
tGLQX (1)
tOLZ
Output Enable Low to Output
Transition
E = VIL
(2)
tOE
Output Enable Low to Output Valid
E = VIL
tOH
Chip Enable High to Output
Transition
G = VIL
tHZ
Chip Enable High to Output Hi-Z
G = VIL
tGHQX
tOH
Output Enable High to Output
Transition
E = VIL
tGHQZ (1)
tDF
Output Enable High to Output Hi-Z
E = VIL
tAXQX
tOH
Address Transition to Output
Transition
tGLQV
tEHQX
tEHQZ
(1)
E = VIL, G = VIL
Max
100
Min
120
100
0
ns
120
0
100
0
0
0
0
0
0
ns
ns
30
0
ns
ns
30
20
ns
ns
50
20
ns
ns
120
40
0
Max
ns
ns
Notes: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
Toggle bit (DQ6). When Programming operations
are in progress, successive attempts to read DQ6
will output complementary data. DQ6 will toggle
following toggling of either G or E when G is low.
The operation is completed when two successive
reads yield the same output data. The next read
will output the bit last programmed or a ’1’ after
erasing. The toggle bit is valid only effective during
P/E.C. operations, that is after the fourth W pulse
for programming or after the sixth W pulse for
Erase. If the byte to be programmed belongs to a
protected block the command will be ignored. If the
blocks selected for erasure are protected, DQ6 will
toggle for about 100µs and then return back to
Read. See Figure 11 for Toggle Bit flowchart and
Figure 12 for Toggle Bit waveforms.
Error bit (DQ5). This bit is set to ’1’ by the P/E.C
when there is a failure of byte programming, block
erase, or chip erase that results in invalid data
being programmedin the memory block. In case of
error in block erase or byte program, the block in
which the error occured or to which the pro-
10/31
grammed byte belongs, must be discarded. Other
blocks may still be used. Error bit resetsafter Reset
(RST) instruction. In case of success, the error bit
will set to ’0’ during Program or Erase and to valid
data after write operation is completed.
Erase Timer bit (DQ3). This bit is set to ’0’ by the
P/E.C. when the last Block Erase command has
been entered to the Command Interface and it is
awaiting the Erase start. When the erase timeout
period is finished, after 80 to 120µs, DQ3 returns
back to ’1’.
Coded Cycles. The two coded cycles unlock the
Command Interface. They are followed by a command input or a comand confirmation. The coded
cycles consist of writing the data AAh at address
5555h during the first cycle and data 55hat address
2AAAh during the second cycle. Addresses are
latched on the falling edge of W or E while data is
latched on the rising edge of W or E. The coded
cycles happen on first and second cycles of the
command write or on the fourth and fifth cycles.
M29W040
Table 12B. Read AC Characteristics
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
M29W040
Symbol
Alt
Parameter
-150
Test Condition
-200
Unit
VCC = 2.7V to 3.6V VCC = 2.7V to 3.6V
Min
tAVAV
tRC
Address Valid to Next Address
Valid
E = VIL, G = VIL
tAVQV
tACC
Address Valid to Output Valid
E = VIL, G = VIL
tELQX (1)
tLZ
Chip Enable Low to Output
Transition
G = VIL
tELQV (2)
tCE
Chip Enable Low to Output Valid
G = VIL
tGLQX (1)
tOLZ
Output Enable Low to Output
Transition
E = VIL
tGLQV (2)
tOE
Output Enable Low to Output
Valid
E = VIL
tEHQX
tOH
Chip Enable High to Output
Transition
G = VIL
tEHQZ (1)
tHZ
Chip Enable High to Output Hi-Z
G = VIL
tGHQX
tOH
Output Enable High to Output
Transition
E = VIL
tDF
Output Enable High to Output
Hi-Z
E = VIL
tOH
Address Transition to Output
Transition
E = VIL, G = VIL
tGHQZ
(1)
tAXQX
Max
150
Min
200
150
0
ns
200
0
150
0
0
0
0
0
0
ns
ns
50
0
ns
ns
50
40
ns
ns
70
40
ns
ns
200
55
0
Max
ns
ns
Notes: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
Read Array/Reset (RST) instruction. The Reset
instruction consists of one write operation giving
the command F0h. It can be optionally preceded
by the two coded cycles. A wait state of 5µs before
read operationsis necessaryif the Reset command
is applied during an Erase or Power Down operation.
Read Electronic Signature (RSIG) instruction.
This instruction uses the two coded cycles followed
by one write cycle giving the command 90h to
address 5555h for command setup. A subsequent
read will output the manufacturer code, the device
code or the Block Protection status depending on
the levels of A0, A1, A6, A16, A17 and A18. The
manufacturer code, 20h, is output when the addresses lines A0, A1 and A6 are Low, the device
code, E2h is output when A0 is High with A1 and
A6 Low.
Read Block Protection (RBP) instruction. The
use of Read ElectronicSignature(RSIG) command
also allows access to the Block Protection status
verify. After giving the RSIG command, A0 and A6
are set to VIL with A1 at VIH, while A16, A17 and
A18 define the block of the block to be verified. A
read in these conditions will output a 01h if block is
protected and a 00h if block is not protected.
This Read Block Protection is the only valid way to
check the protection status of a block. Nevertheless, it must not be used during the block protection
phase as a method to verify the Block Protection.
Please refer to Block Protection paragraph.
Power Down (PD) instruction. The Power Down
instruction uses one write cycle to put the memory
into a power down mode where current consumption is typically reduced to less than 1.0µA. Once
in this state, a Reset (RST) command must be
written to the P/E.C. prior to any operation.
11/31
12/31
Note: Write Enable (W) = High
DQ0-DQ7
G
E
A0-A18
ADDRESS VALID
AND CHIP ENABLE
tAVQV
tGLQV
OUTPUT ENABLE
tGLQX
tELQX
tELQV
VALID
tAVAV
DATA VALID
VALID
tGHQZ
tGHQX
tEHQX
tEHQZ
tAXQX
AI01363B
M29W040
Figure 6. Read Mode AC Waveforms
M29W040
Table 13A. Write AC Characteristics, Write Enable Controlled
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
M29W040
Symbol
Alt
-100
-120
VCC = 3.3V±0.3V
CL = 30pF
VCC = 3.3V±0.3V
Parameter
Min
tAVAV
tWC
Address Valid to Next Address Valid
tELWL
tCS
tWLWH
Max
Min
Unit
Max
100
120
ns
Chip Enable Low to Write Enable Low
0
0
ns
tWP
Write Enable Low to Write Enable High
45
50
ns
tDVWH
tDS
Input Valid to Write Enable High
45
50
ns
tWHDX
tDH
Write Enable High to Input Transition
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
0
0
ns
25
30
ns
tWHWL
tWPH Write Enable High to Write Enable Low
tAVWL
tAS
Address Valid to Write Enable Low
0
0
ns
tWLAX
tAH
Write Enable Low to Address Transition
45
50
ns
Output Enable High to Write Enable Low
0
0
ns
tGHWL
VCC High to Chip Enable Low
50
50
µs
tWHQV1
(1)
Write Enable High to Output Valid (Program)
12
12
µs
tWHQV2
(1)
Write Enable High to Output Valid
(Block Erase)
1.5
tVCHEL
tWHGL
tVCS
tOEH
Write Enable High to Output Enable Low
0
30
1.5
0
30
sec
ns
Note: 1. Time is measured to Data Polling or Toggle Bit, t WHQV = tWHQ7V + tQ7VQV.
Chip Erase(CE) instruction. This instructionuses
six write cycles. The Erase Set-up command 80h
is written to address 5555h on third cycle after the
two coded cycles. The Chip Erase Confirm command 10h is written at address5555h on sixth cycle
after another two coded cycles. If the second command given is not an erase confirm or if the coded
cycles are wrong, the instruction aborts and the
device is reset to Read Array. It is not necessaryto
program the array with 00h first as the P/E.C. will
automatically do this before erasing to FFh. Read
operations after the sixth rising edge of W or E
output the status register bits. During the execution of the erase by the P/E.C. the memory will not
accept any instruction.
Read of DataPolling bit DQ7 returns ’0’, then ’1’ on
completion. The Toggle Bit DQ6 toggles during
erase operation and stops when erase is completed. After completion the Status Register bit
DQ5 returns ’1’ if there has been an Erase Failure
because the erasure has not been verified even
after the maximum number of erase cycles have
been executed.
13/31
M29W040
Table 13B. Write AC Characteristics, Write Enable Controlled
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
M29W040
Symbol
Alt
-150
-200
VCC = 2.7V to 3.6V
VCC = 2.7V to 3.6V
Parameter
Min
tAVAV
tWC
Address Valid to Next Address Valid
tELWL
tCS
tWLWH
Max
Min
Unit
Max
150
200
ns
Chip Enable Low to Write Enable Low
0
0
ns
tWP
Write Enable Low to Write Enable High
65
80
ns
tDVWH
tDS
Input Valid to Write Enable High
65
80
ns
tWHDX
tDH
Write Enable High to Input Transition
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
0
0
ns
tWPH Write Enable High to Write Enable Low
35
35
ns
tWHWL
tAVWL
tAS
Address Valid to Write Enable Low
0
0
ns
tWLAX
tAH
Write Enable Low to Address Transition
65
65
ns
Output Enable High to Write Enable Low
0
0
ns
VCC High to Chip Enable Low
50
50
µs
Write Enable High to Output Valid (Program)
12
12
µs
Write Enable High to Output Valid
(Block Erase)
1.5
tGHWL
tVCHEL
tWHQV1
tVCS
(1)
tWHQV2 (1)
tWHGL
tOEH
Write Enable High to Output Enable Low
0
30
1.5
0
30
sec
ns
Note: 1. Time is measured to Data Polling or Toggle Bit, tWHQV = tWHQ7V + tQ7VQV.
Block Erase (BE) instruction. This instruction
uses a minimum of six write cycles. The Erase
Set-up command 80h is written to address 5555h
on third cycle after the two coded cycles. The Block
Erase Confirm command 30h is written on sixth
cycle after another two coded cycles. During the
input of the second command an address within
the block to be erased is given and latched into the
memory. Additional Block Erase confirm commands and block addresses can be written subsequently to erase other blocks in parallel, without
further coded cycles. The erase will start after the
Erase timeout period (see Erase Timer Bit DQ3
description). Thus, additional Block Erase commands must be given within this delay. The input of
a newBlock Erasecommand will restart the timeout
period. The status of the internal timer can be
monitored through the level of DQ3, if DQ3 is ’0’ the
Block Erase Command has been given and the
timeout is running, if DQ3 is ’1’, the timeout has
expired and the P/E.C is erasing the block(s).
14/31
During Erase timeout, any command different from
30h will abort the instruction and reset the device
to read array mode. It is not necessary to program
the block with 00h as the P/E.C. will do this automatically before erasing to FFh. Read operations
after the sixth rising edge of W or E output the
status register bits.
During the executionof the erase by the P/E.C.,the
memory accepts only the ES (Erase Suspend) and
RST (Reset) instructions. Data Polling bit DQ7
returns ’0’ while the erasure is in progress and ’1’
when it has completed.The Toggle Bit DQ6 toggles
during the erase operation. It stops when erase is
completed. After completion the Status Register
bit DQ5 returns ’1’ if there has been an Erase
Failure because erasure has not completed even
after the maximum number of erase cycles have
been executed. In this case, it will be necessary to
input a Reset (RST) to the command interface in
order to reset the P/E.C.
M29W040
Figure 7. Write AC Waveforms, W Controlled
WRITE CYCLE
A0-A18
VALID
tWLAX
tAVWL
tWHEH
E
tELWL
tWHGL
G
tGHWL
tWLWH
W
tWHWL
tDVWH
DQ0-DQ7
tWHDX
VALID
VCC
tVCHEL
AI01365B
Note: Address are latched on the falling edge of W, Data is latched on the rising edge of W.
Program (PG) instruction. The memory can be
programmed Byte-by-Byte. This instruction uses
four write cycles. The Program command A0h is
written on the third cycle after two coded cycles. A
fourth write operation latches the Address on the
falling edge of W or E and the Data to be written
on its rising edge and starts the P/E.C. During the
execution of the program by the P/E.C., the memory will not acceptany instruction.Read operations
output the status bits after the programming has
started. The status bits DQ5, DQ6 and DQ7 allow
a checkof the statusof the programmingoperation.
Memory programming is made only by writing ’0’ in
place of ’1’ in a Byte.
Erase Suspend (ES) instruction. The Block
Erase operation may be suspended by this instruction which consists of writing the command B0h
without any specific addresscode. No codedcycles
are required.It allows reading of data from another
block while erase is in progress. Erase suspend is
accepted only during the Block Erase instruction
execution and defaults to read array mode. Writing
this command during Erase timeout will, in addition
to suspending the erase, terminate the timeout.
The Toggle Bit DQ6 stops toggling when the P/E.C.
is suspended. ToggleBit status must be monitored
at an address out of the block being erased. Toggle
Bit will stop toggling between 0.1µs and 15µs after
the Erase Suspend (ES) command has been written.
The M29W040 will then automatically set to Read
Memory Array mode. When erase is suspended,
Read from blocks being erased will output invalid
data, Read from block not being erased is valid.
During the suspension the memory will respond
only to Erase Resume (ER) and Reset (RST) instructions. RST command will definitively abort
erasure and result in the invalid data in the blocks
being erased.
Erase Resume (ER) instruction. If an Erase Suspend instruction was previously executed, the
erase operation may be resumed by giving the
command 30h, at any address, and without any
coded cycles.
15/31
M29W040
Table 14A. Write AC Characteristics, Chip Enable Controlled
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
M29W040
Symbol
Alt
-100
-120
VCC = 3.3V±0.3V
C L = 30pF
VCC = 3.3V±0.3V
Parameter
Min
tAVAV
tWC
Address Valid to Next Address Valid
tWLEL
tWS
tELEH
Max
Min
Unit
Max
100
120
ns
Write Enable Low to Chip Enable Low
0
0
ns
tCP
Chip Enable Low to Chip Enable High
45
50
ns
tDVEH
tDS
Input Valid to Chip Enable High
45
50
ns
tEHDX
tDH
Chip Enable High to Input Transition
0
0
ns
tEHWH
tWH
Chip Enable High to Write Enable High
0
0
ns
tEHEL
tCPH
Chip Enable High to Chip Enable Low
25
30
ns
tAVEL
tAS
Address Valid to Chip Enable Low
0
0
ns
tELAX
tAH
Chip Enable Low to Address Transition
45
50
ns
Output Enable High Chip Enable Low
0
0
ns
tGHEL
VCC High to Write Enable Low
50
50
µs
tEHQV1
(1)
Chip Enable High to Output Valid (Program)
12
12
µs
tEHQV2
(1)
Chip Enable High to Output Valid
(Block Erase)
1.5
tVCHWL
tEHGL
tVCS
tOEH
Chip Enable High to Output Enable Low
0
30
1.5
0
30
sec
ns
Note: 1. Time is measured to Data Polling or Toggle Bit, tWHQV = tWHQ7V + tQ7VQV.
Power Up
The memory Command Interfaceis reseton power
up to Read Array. Either E or W must be tied to VIH
during Power-up to allow maximum security and
the possibility to write a command on the first rising
adge of E or W. Any write cycle initiation is blocked
when VCC is below VLKO.
16/31
Supply Rails
Normal precautions must be taken for supply voltage decoupling, each device in a system should
have the VCC rail decoupledwith a 1.0µF capacitor
close to the VCC and VSS pins. The PCB trace
widths should be sufficient to carry the VCC program and erase currents required.
M29W040
Table 14B. Write AC Characteristics, Chip Enable Controlled
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
M29W040
Symbol
Alt
-150
Parameter
-200
Unit
VCC = 2.7V to 3.6V VCC = 2.7V to 3.6V
Min
tAVAV
tWC
Address Valid to Next Address Valid
tWLEL
tWS
tELEH
Max
Min
Max
150
200
ns
Write Enable Low to Chip Enable Low
0
0
ns
tCP
Chip Enable Low to Chip Enable High
65
80
ns
tDVEH
tDS
Input Valid to Chip Enable High
65
80
ns
tEHDX
tDH
Chip Enable High to Input Transition
0
0
ns
tEHWH
tWH
Chip Enable High to Write Enable High
0
0
ns
tEHEL
tCPH
Chip Enable High to Chip Enable Low
35
35
ns
tAVEL
tAS
Address Valid to Chip Enable Low
0
0
ns
tELAX
tAH
Chip Enable Low to Address Transition
65
65
ns
Output Enable High Chip Enable Low
0
0
ns
VCC High to Write Enable Low
50
50
µs
Chip Enable High to Output Valid (Program)
12
12
µs
Chip Enable High to Output Valid
(Block Erase)
1.5
tGHEL
tVCHWL
tEHQV1
tVCS
(1)
tEHQV2 (1)
tEHGL
tOEH
Chip Enable High to Output Enable Low
0
30
1.5
0
30
sec
ns
Note: 1. Time is measured to Data Polling or Toggle Bit, t WHQV = tWHQ7V + tQ7VQV.
17/31
M29W040
Figure 8. Write AC Waveforms, E Controlled
WRITE CYCLE
A0-A18
VALID
tELAX
tAVEL
tEHWH
W
tWLEL
tEHGL
G
tGHEL
tELEH
E
tEHEL
tDVEH
DQ0-DQ7
tEHDX
VALID
VCC
tVCHWL
Note: Address are latched on the falling edge of E, Data is latched on the rising edge of E.
18/31
AI01366B
M29W040
Table 15A. Data Polling and Toggle Bit AC Characteristics (1)
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
M29W040
Symbol
Alt
-100
-120
VCC = 3.3V±0.3V
C L = 30pF
VCC = 3.3V±0.3V
Parameter
Min
tWHQ7V1 (2)
Write Enable High to DQ7 Valid
(Program, W Controlled)
12
tWHQ7V2 (2)
Write Enable High to DQ7 Valid
(Block Erase, W Controlled)
1.5
tEHQ7V1 (2)
Chip Enable High to DQ7 Valid
(Program, E Controlled)
12
tEHQ7V2 (2)
Chip Enable High to DQ7 Valid
(Block Erase, E Controlled)
1.5
tQ7VQV
Q7 Valid to Output Valid (Data Polling)
tWHQV1
Write Enable High to Output Valid
(Program)
12
tWHQV2
Write Enable High to Output Valid
(Block Erase)
1.5
tEHQV1
Chip Enable High to Output Valid
(Program)
12
tEHQV2
Chip Enable High to Output Valid
(Block Erase)
1.5
Max
Min
Unit
Max
µs
12
30
1.5
30
µs
12
30
1.5
45
30
sec
50
ns
µs
12
30
1.5
30
1.5
sec
µs
12
30
sec
30
sec
Notes: 1. All other timings are defined in Read AC Characteristics table.
2. tWHQ7V is the Program or Erase time.
19/31
M29W040
Table 15B. Data Polling and Toggle Bit AC Characteristics (1)
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
M29W040
Symbol
Alt
-150
-200
VCC = 2.7V to 3.6V
VCC = 2.7V to 3.6V
Parameter
Min
tWHQ7V1 (2)
Write Enable High to DQ7 Valid
(Program, W Controlled)
12
tWHQ7V2 (2)
Write Enable High to DQ7 Valid
(Block Erase, W Controlled)
1.5
tEHQ7V1 (2)
Chip Enable High to DQ7 Valid
(Program, E Controlled)
12
tEHQ7V2 (2)
Chip Enable High to DQ7 Valid
(Block Erase, E Controlled)
1.5
tQ7VQV
Q7 Valid to Output Valid (Data Polling)
tWHQV1
Write Enable High to Output Valid
(Program)
12
tWHQV2
Write Enable High to Output Valid
(Block Erase)
1.5
tEHQV1
Chip Enable High to Output Valid
(Program)
12
tEHQV2
Chip Enable High to Output Valid
(Block Erase)
1.5
Notes: 1. All other timings are defined in Read AC Characteristics table.
2. tWHQ7V is the Program or Erase time.
20/31
Max
Min
Unit
Max
µs
12
30
1.5
30
µs
12
30
1.5
55
30
sec
70
ns
µs
12
30
1.5
30
1.5
sec
µs
12
30
sec
30
sec
Notes: 1.
2.
3.
4.
LAST CYCLE
OF PROGRAM
OR ERASE
DATA POLLING
READ CYCLES
tWHQ7V
tEHQ7V
tELQV
tAVQV
tQ7VQV
IGNORE
DQ7
DATA POLLING (LAST) CYCLE
tGLQV
BYTE ADDRESS (WITHIN BLOCKS)
All other timings are as a normal Read cycle.
DQ7 and DQ0-DQ6 can transmit to valid at any point during the data output valid period.
tWHQ7V is the Program or Erase time.
During erasing operation Byte address must be within Block being erased.
DQ0-DQ6
DQ7
W
G
E
A0-A18
VALID
VALID
DATA OUTPUT VALID
AI01364B
DATA VERIFY
READ CYCLE
M29W040
Figure 9. Data Polling DQ7 AC Waveforms
21/31
M29W040
Figure 10. Data Polling Flowchart
Figure 11. Data Toggle Flowchart
START
START
READ DQ5 & DQ7
at VALID ADDRESS
READ
DQ5 & DQ6
DQ7
=
DATA
DQ6
=
TOGGLE
YES
NO
NO
YES
NO
DQ5
=1
DQ5
=1
YES
YES
READ DQ7
READ DQ6
DQ7
=
DATA
NO
DQ6
=
TOGGLE
YES
NO
FAIL
NO
YES
FAIL
PASS
PASS
AI01369
AI01370
Table 16. Program, Erase Times and Program, Erase Endurance Cycles
(TA = 0 to 70°C; VCC = 2.7V to 3.6V)
M29W040
Parameter
Min
Chip Program (Byte)
Typ
6
Chip Erase (Preprogrammed)
2.5
Chip Erase
8.5
Block Erase (Preprogrammed)
1.5
Block Erase
Byte Program
Program/Erase Cycles (per Block)
22/31
Unit
Max
sec
30
sec
30
2
12
100,000
sec
sec
sec
2200
µs
cycles
LAST CYCLE
OF PROGRAM
OF ERASE
DATA
TOGGLE
READ CYCLE
Note: All other timings are as a normal Read cycle.
DQ0-DQ5,
DQ7
DQ6
W
G
E
A0-A18
DATA TOGGLE
READ CYCLE
IGNORE
STOP TOGGLE
tWHQV
tEHQV
tAVQV
READ CYCLE
VALID
VALID
tGLQV
tELQV
VALID
AI01367
M29W040
Figure 12. Data Toggle DQ6 AC Waveforms
23/31
M29W040
Figure 13. Block Protection Flowchart
START
BLOCK ADDRESS
on A16, A17, A18
n=0
G, A9 = VID,
E = VIL
Wait 4µs
W = VIL
Wait 100µs
W = VIH
G = VIH
Wait 4µs
READ DQ0 at PROTECTION
ADDRESS: A0, A6 = VIL, A1 = VIH and
A16, A17, A18 DEFINING BLOCK
DQ0
=1
NO
YES
A9 = VIH
++n
= 25
NO
PASS
YES
A9 = VIH
FAIL
AI01368D
24/31
M29W040
Figure 14. Block Unprotecting Flowchart
START
PROTECT
ALL BLOCKS
n=0
A6, A12, A16 = VIH
E, G, A9 = VIH
Wait 4µs
E, G, A9 = VID
Wait 4µs
W = VIL
Wait 10ms
W = VIH
E, G = VIH
Wait 4µs
READ at UNPROTECTION
ADDRESS: A1, A6 = VIH, A0 = VIL and
A16, A17, A18 DEFINING BLOCK
(see Note 1)
NO
NO
++n
= 1000
YES
FAIL
DATA
=
00h
INCREMENT
BLOCK
YES
LAST
SECT.
NO
YES
PASS
AI01371E
Note: 1. A6 is kept at V IH during unprotection algorithm in order to secure best unprotection verification. During all other protection status
reads, A6 must be kept at V IL.
25/31
M29W040
ORDERING INFORMATION SCHEME
Example:
M29W040
Operating Voltage
W
2.7V to 3.6V
-120
N
1
Package
Speed
TR
K
PLCC32
1
0 to 70 °C
-120
120ns
N
–20 to 85 °C
150ns
TSOP32
8 x 20mm
5
-150
6
–40 to 85 °C
-200
200ns
(1)
Option
Temp. Range
100ns
-100
NZ TSOP32
8 x 14mm
R
Reverse
Pinout
TR Tape & Reel
Packing
Note: 1. This speed is obtained with a supply voltage range of V CC = 3.3V ± 0.3V and a load capacitance at 30pF.
M29W040 is replaced by the new version M29W040B
Device are shipped from the factory with the memory content erased (to FFh).
For a list of available options(Speed, Package,etc...) or for further information on any aspect of this device,
please contact the STMicroelectronics Sales Office nearest to you.
26/31
M29W040
PLCC32 - 32 lead Plastic Leaded Chip Carrier, rectangular
mm
Symb
Typ
inches
Min
Max
Min
Max
A
2.54
3.56
Typ
0.100
0.140
A1
1.52
2.41
0.060
0.095
A2
–
0.38
–
0.015
B
0.33
0.53
0.013
0.021
B1
0.66
0.81
0.026
0.032
D
12.32
12.57
0.485
0.495
D1
11.35
11.56
0.447
0.455
D2
9.91
10.92
0.390
0.430
E
14.86
15.11
0.585
0.595
E1
13.89
14.10
0.547
0.555
E2
12.45
13.46
0.490
0.530
–
–
–
–
0.00
0.25
0.000
0.010
–
–
–
–
e
1.27
F
R
0.89
0.050
0.035
N
32
32
Nd
7
7
Ne
9
9
CP
0.10
0.004
D
D1
A1
A2
1 N
B1
E1 E
Ne
e
D2/E2
F
B
0.51 (.020)
1.14 (.045)
A
Nd
R
CP
PLCC
Drawing is not to scale.
27/31
M29W040
TSOP32 Normal Pinout - 32 lead Plastic Thin Small Outline, 8 x 20mm
mm
Symb
Typ
inches
Min
Max
A
Typ
Min
1.20
0.047
A1
0.05
0.15
0.002
0.007
A2
0.95
1.05
0.037
0.041
B
0.15
0.27
0.006
0.011
C
0.10
0.21
0.004
0.008
D
19.80
20.20
0.780
0.795
D1
18.30
18.50
0.720
0.728
E
7.90
8.10
0.311
0.319
-
-
-
-
L
0.50
0.70
0.020
0.028
α
0°
5°
0°
5°
N
32
e
0.50
0.020
32
CP
0.10
0.004
A2
1
N
e
E
B
N/2
D1
A
CP
D
DIE
C
TSOP-a
Drawing is not to scale.
28/31
Max
A1
α
L
M29W040
TSOP32 Reverse Pinout - 32 lead Plastic Thin Small Outline, 8 x 20mm
mm
Symb
Typ
inches
Min
Max
A
Typ
Min
1.20
Max
0.047
A1
0.05
0.17
0.002
0.006
A2
0.95
1.05
0.037
0.041
B
0.15
0.27
0.006
0.011
C
0.10
0.21
0.004
0.008
D
19.80
20.20
0.780
0.795
D1
18.30
18.50
0.720
0.728
E
7.90
8.10
0.311
0.319
–
–
–
–
L
0.50
0.70
0.020
0.028
α
0°
5°
0°
5°
N
32
e
0.50
0.020
32
CP
0.10
0.004
A2
1
N
e
E
B
N/2
D1
A
CP
D
DIE
C
TSOP-b
A1
α
L
Drawing is not to scale.
29/31
M29W040
TSOP32 - 32 lead Plastic Thin Small Outline, 8 x 14mm
mm
Symb
Typ
inches
Min
Max
A
Typ
Min
1.20
0.047
A1
0.05
0.15
0.002
0.006
A2
0.95
1.05
0.037
0.041
B
0.17
0.27
0.007
0.011
C
0.10
0.21
0.004
0.008
D
13.80
14.20
0.543
0.559
D1
12.30
12.50
0.484
0.492
E
7.90
8.10
0.311
0.319
-
-
-
-
L
0.50
0.70
0.020
0.028
α
0°
5°
0°
5°
N
32
e
0.50
0.020
32
CP
0.10
0.004
A2
1
N
e
E
B
N/2
D1
A
CP
D
DIE
C
TSOP-a
Drawing is not to scale.
30/31
Max
A1
α
L
M29W040
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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31/31
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