AP9971AGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant BVDSS 60V RDS(ON) 36mΩ ID G 22A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9971AGJ) are available for low-profile applications. G G D D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 22 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 14 A 80 A 34.7 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.6 ℃/W Rthj-a Maixmum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice 1 201305142 AP9971AGH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=1mA 60 - - V VGS=10V, ID=15A - - 36 mΩ VGS=6V, ID=10A - - 50 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=15A - 12.4 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=150 C) VDS=48V ,VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=15A - 17 27 nC Qgs Gate-Source Charge VDS=48V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 6.4 - nC td(on) Turn-on Delay Time VDS=30V - 6.6 - ns tr Rise Time ID=15A - 22 - ns td(off) Turn-off Delay Time RG=3.3Ω - 17 - ns tf Fall Time VGS=10V - 4.3 - ns Ciss Input Capacitance VGS=0V - 625 1000 pF Coss Output Capacitance VDS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 65 - pF Min. Typ. o Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=15A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=15A, VGS=0V - 27 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 26 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9971AGH/J-HF 80 50 7 .0 V 40 60 ID , Drain Current (A) ID , Drain Current (A) 10 V 7 .0 V T C = 150 o C 10 V T C = 25 o C 40 5.0 V 4.5 V 5.0 V 30 4.5 V 20 V G = 4.0 V 20 10 V G = 4 .0V 0 0 0 2 4 6 8 0 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 50 I D =10A I D =15A V G =10V T C =25 o C Normalized RDS(ON) RDS(ON) (mΩ) 1.6 40 30 1.2 0.8 20 0.4 2 4 6 8 10 -50 1.5 16 1.3 Normalized VGS(th) (V) IS(A) 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 20 T j =150 o C 50 T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage 12 0 o V GS Gate-to-Source Voltage (V) T j =25 o C 8 1.1 0.9 0.7 4 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9971AGH/J-HF f=1.0MHz 1000 12 C iss V DS = 30 V V DS = 36 V V DS = 48 V 8 C (pF) VGS , Gate to Source Voltage (V) I D = 15 A 10 6 100 C oss C rss 4 2 10 0 0 4 8 12 16 1 20 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 100 100us ID (A) 10 1ms 1 10ms 100ms DC o T c =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4