LIGITEK LA44B-SGLY.DBK-S2-PF Led array Datasheet

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
LED ARRAY
Pb
Lead-Free Parts
LA44B/SGLY.DBK-S2-PF
DATA SHEET
DOC. NO : QW0905- LA44B/SGLY.DBK-S2-PF
REV.
:
A
DATE
:
09 - Aug. - 2007
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/7
PART NO. LA44B/SGLY.DBK-S2-PF
Package Dimensions
3.0±0.5
4.4
9.0
ψ3.0 X2
SGLY
5.0
ψ3.4X2
9.65
DBK
2.65
□0.5
TYP
3.3±0.25
SGL
2.54TYP
+
-
1
2
5.05±0.5
2.54±0.5
Y
1
2
LSGLY2362-PF
LDBK2340-1-PF
3.0
3.0
5.0
5.0
1.5MAX
1.5MAX
25.0MIN
□0.5
TYP
25.0MIN
SGL
□0.5
TYP
1.0MIN
2.54TYP
+
-
1.0MIN
2.54TYP
1
2
Note : 1.All dimension are in millimeter tolerance is ± 0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
Y
1
2
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PART NO. LA44B/SGLY.DBK-S2-PF
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
SGL
Y
DBK
Forward Current
IF
30
20
30
mA
Peak Forward Current
Duty 1/10@10KHz
IFP
100
80
100
mA
Power Dissipation
PD
120
60
120
mW
Ir
50
10
50
μA
Electrostatic Discharge( * )
ESD
500
---
150
V
Operating Temperature
Topr
-20 ~ +80
-40 ~ +85
-20 ~ +80
℃
Storage Temperature
Tstg
-30 ~ +100
-40 ~ +100
-30 ~ +100
℃
Reverse Current @5V
Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic
* glove
is recommended when handing these LED. All devices, equipment and machinery must be properly
grounded.
Typical Electrical & Optical Characteristics (Ta=25 ℃)
PART NO
COLOR
MATERIAL
Emitted
Peak Dominant Spectral Forward
wave halfwidth voltage
wave
length length △λ nm @ 20mA(V)
λPnm λDnm
Min. Typ. Max. Min. Typ.
Lens
InGaN/SiC Green
Luminous Viewing
intensity
angle
@10mA(mcd) 2θ 1/2
(deg)
502
505
30
---
3.5 4.2
90 160
100
585
---
35
1.7 ---
28
50
100
---
470
30
---
3.5 4.0 350 700
36
White Diffused
LA44B/SGLY.DBK-S2-PF
GaAsP/GaP Yellow
InGan/GaN Blue
Blue Diffused
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ± 15% testing tolerance.
2.6
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Page3/7
PART NO.LA44B/SGLY.DBK-S2-PF
Typical Electro-Optical Characteristics Curve
SGL CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
1.5
20
Relative Intensity
Normalize @20mA
Forward Current(mA)
25
10
15
5
0
1.0
0.5
0.0
1.5
2.0
3.0
2.5
3.5
4.0
0
30
20
10
0
40
80
100
Ambient Temperature Ta(℃)
Relative Intensity@20mA
1.0
0.8
0.6
0.4
0.2
0.0
400
450
500
550
Wavelength (nm)
25
600
2.0
1.5
1.0
0.5
0.0
25
30
35
40
45 50
55
60
65
Ambient Temperature Ta(℃)
Fig.5 Relative Intensity vs. Wavelength
350
Relative Luminous Intensity(a.u.)
Forward Current(mA)
40
60
20
Fig.4 Relative Intensity vs. Ambient Temp
Fig.3 Forward Voltage vs. Ambient Temp
20
15
Forward Current(mA)
Forward Voltage(V)
0
10
5
650
70
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Page4/7
PART NO. LA44B/SGLY.DBK-S2-PF
Typical Electro-Optical Characteristics Curve
Y CHIP
Fig.2 Relative Intensity vs. Forward Current
Fig.1 Forward current vs. Forward Voltage
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
1.0
2.0
3.0
5.0
4.0
10
1.0
Forward Current(mA)
Forward Voltage(V)
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
1.2
1.1
1.0
0.9
0.8
-40
-20
0
20
40
60
80
100
Relative Intensity@20mA
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
650
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
500
1000
100
700
80
100
LIGITEK ELECTRONICS CO.,LTD.
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PART NO. LA44B/SGLY.DBK-S2-PF
Page 5/7
Typical Electro-Optical Characteristics Curve
DBK CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1
01
2.5
2.0
1.5
1.0
0.5
0.0
1.0
2.0
3.0
4.0
5.0
1
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
400
450
500
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
550
100
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PART NO. LA44B/SGLY.DBK-S2-PF
Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350°C Max
Soldering Time:3 Seconds Max(One time only)
Distance:2mm Min(From solder joint to case)
2.Wave Soldering Profile
Dip Soldering
Preheat: 120°C Max
Preheat time: 120seconds Max
Ramp-up
2° C/sec(max)
Ramp-Down:-5°C/sec(max)
Solder Bath:260° C Max
Dipping Time:3 seconds Max
Distance:2mm Min(From solder joint to case)
Temp(° C)
260° C3sec Max
260°
5° /sec
max
120°
25°
0° 0
2° /sec
max
Preheat
120 Seconds Max
100
200
Note: 1.Wave solder should not be made more than one time.
2.You can just only select one of the soldering conditions as above.
250
Time(sec)
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PART NO.LA44B/SGLY.DBK-S2-PF
Page 7/7
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
Thermal Shock Test
1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11
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