BAV19WS-G, BAV20WS-G, BAV21WS-G www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diodes • For general purpose • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade • Base P/N-HG3 - green, AEC-Q101 qualified (part number available on request) MECHANICAL DATA • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Case: SOD-323 Weight: approx. 4 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE TYPE DIFFERENTIATION ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS BAV19WS-G VR = 100 V BAV19WS-G3-08 or BAV19WS-G3-18 AS Single diode Tape and reel BAV20WS-G VR = 150 V BAV20WS-G3-08 or BAV20WS-G3-18 AT Single diode Tape and reel BAV21WS-G VR = 200 V BAV21WS-G3-08 or BAV21WS-G3-18 AU Single diode Tape and reel PART ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Continuous reverse voltage Repetitive peak reverse voltage SYMBOL SYMBOL VALUE UNIT BAV19WS-G VR 100 V BAV20WS-G VR 150 V BAV21WS-G VR 200 V BAV19WS-G VRRM 120 V BAV20WS-G VRRM 200 V BAV21WS-G VRRM 250 V IF 250 mA IF(AV) 200 mA 625 mA Forward continuous current (1) Rectified current (average) half wave rectification with resistive load (1) Repetitive peak forward current (1) f 50 Hz, = 180° IFRM Surge forward current t < 1 s, TJ = 25 °C IFSM 1 A Ptot 200 mW Power dissipation Note (1) Valid provided that leads are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE UNIT Thermal resistance junction to ambient air RthJA 625 K/W Thermal resistance junction to lead RthJL 450 K/W Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C Junction temperature TEST CONDITION Rev. 1.6, 27-Sep-16 Document Number: 83423 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19WS-G, BAV20WS-G, BAV21WS-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL IF = 100 mA Forward voltage IF = 200 mA VR = 100 V Reverse leakage current Reverse recovery time MIN. TYP. UNIT 1 V VF 1.25 V IR 100 nA μA VR = 100 V, Tj = 100 °C BAV19WS-G IR 15 VR = 150 V BAV20WS-G IR 100 nA VR = 150 V, Tj = 100 °C BAV20WS-G IR 15 μA VR = 200 V BAV21WS-G IR 100 nA VR = 200 V, Tj = 100 °C BAV21WS-G IR 15 μA Dynamic Forward resistance Diode capacitance BAV19WS-G MAX. VF IF = 10 mA rf VR = 0 V, f = 1 MHz CD 1.5 pF IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 trr 50 ns 5 I F - Forward Current (mA) 1000 Tj = 100 °C 100 10 25 °C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 VF - Forward Voltage (V) 18858 0.2 DC current IF Current (rectif.) I O 0.1 0 18859 60 90 200 150 100 50 0 0 20 40 60 80 100 120 140 160 180 200 Tamb - Ambient Temperature (°C) 120 Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature rf - Dynamic Forward Resistance (Ω) I O , I F - Admissible Forward Current (A) 0.3 30 250 18864 Fig. 1 - Forward Current vs. Forward Voltage 0 Ptot - Admissible Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 10 1 1 150 Tamb - Ambient Temperature (°C) Fig. 2 - Admissible Forward Current vs. Ambient Temperature 18861 10 100 IF - Forward Current (mA) Fig. 4 - Dynamic Forward Resistance vs. Forward Current Rev. 1.6, 27-Sep-16 Document Number: 83423 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19WS-G, BAV20WS-G, BAV21WS-G www.vishay.com Vishay Semiconductors 100 10 Reverse Voltage BAV19WS-G VR = 100 V 1 2.0 1.8 CD - Diode Capacitance (pF) IR(Tj)/IR (25 °C) - Leakage Current 1000 BAV20WS-G VR = 150 V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 BAV21WS-G VR = 200 V 0.1 0 40 80 120 160 200 Tj - Junction Temperature (°C) 18862_2 T j = 25 ° C 1 Fig. 5 - Leakage Current vs. Junction Temperature 10 100 VR - Reverse Voltage (V) 18863 Fig. 6 - Capacitance vs. Reverse Voltage 0.1 [0.004] max. 0.15 [0.006] 0.10 [0.004] 0.2 [0.008] 0.8 [0.031] 1.15 [0.045] PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0° - 8° 0.40 [0.016] 0.25 [0.010] 1.95 [0.077] 2.50 [0.098] 1.1 [0.043] 0.20 [0.008] 0.40 [0.016] 2.85 [0.112] 1.5 [0.059] 1.60 [0.063] Cathode bar Footprint recommendation: 1.6 [0.063] Document no.: S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 6 - Date: 23.Sept.2016 17443 0.8 [0.031] 0.6 [0.024] 0.8 [0.031] Rev. 1.6, 27-Sep-16 Document Number: 83423 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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