IPN80R900P7 MOSFET 800VCoolMOSªP7PowerTransistor PG-SOT223 Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfromInfineon’sover18years pioneeringsuperjunctiontechnologyinnovation. Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Fullyqualifiedacc.JEDECforIndustrialApplications •Fullyoptimizedportfolio Drain Pin 2, Tab Benefits Gate Pin 1 •Best-in-classperformance •Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts •Easytodriveandtoparallel •BetterproductionyieldbyreducingESDrelatedfailures •Lessproductionissuesandreducedfieldreturns •Easytoselectrightpartsforfinetuningofdesigns Source Pin 3 Potentialapplications RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 800 V RDS(on),max 0.90 Ω Qg,typ 15 nC ID 6 A Eoss @ 500V 1.4 µJ VGS(th),typ 3 V ESD class (HBM) 2 - Type/OrderingCode Package Marking IPN80R900P7 PG-SOT223 80R900 Final Data Sheet 1 RelatedLinks see Appendix A Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPN80R900P7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPN80R900P7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 6 3.9 A TC=25°C TC=100°C - 14 A TC=25°C - - 13 mJ ID=0.9A; VDD=50V EAR - - 0.11 mJ ID=0.9A; VDD=50V Avalanche current, repetitive IAR - - 0.9 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0to400V Gate source voltage VGS -20 -30 - 20 30 V static; AC (f>1 Hz) Power dissipation Ptot - - 7.0 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C - Continuous diode forward current IS - - 1.7 A TC=25°C IS,pulse - - 14 A TC=25°C dv/dt - - 1 V/ns VDS=0to400V,ISD<=1.1A,Tj=25°C dif/dt - - 50 A/µs VDS=0to400V,ISD<=1.1A,Tj=25°C Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 2) Diode pulse current 3) Reverse diode dv/dt 3) Maximum diode commutation speed 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - solder point Values Unit Note/TestCondition Min. Typ. Max. RthJS - - 17.8 °C/W - Thermal resistance, junction - ambient RthJA - - 160 °C/W Device on PCB, minimal footprint Thermal resistance, junction - ambient RthJA soldered on copper area - - 75 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer 70µm thickness) copper area °C/W for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave- & reflow Tsold soldering allowed - - 260 °C reflow MSL1 1) DPAK equivalent. Limited by Tj max. Maximum duty cycle D=0.5 Pulse width tp limited by Tj,max 3) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs 2) Final Data Sheet 3 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPN80R900P7 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.5 V VDS=VGS,ID=0.11mA - 10 1 - µA VDS=800V,VGS=0V,Tj=25°C VDS=800V,VGS=0V,Tj=150°C - - 1 µA VGS=20V,VDS=0V Min. Typ. Max. V(BR)DSS 800 - Gate threshold voltage VGS(th) 2.5 Zero gate voltage drain current IDSS Gate-source leakage curent incl. zener IGSS diode Drain-source on-state resistance RDS(on) - 0.77 1.99 0.90 - Ω VGS=10V,ID=2.2A,Tj=25°C VGS=10V,ID=2.2A,Tj=150°C Gate resistance RG - 1.4 - Ω f=250kHz,opendrain Unit Note/TestCondition Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 350 - pF VGS=0V,VDS=500V,f=250kHz Output capacitance Coss - 6 - pF VGS=0V,VDS=500V,f=250kHz Effective output capacitance, energy related1) Co(er) - 11 - pF VGS=0V,VDS=0to500V Effective output capacitance, time related2) Co(tr) - 135 - pF ID=constant,VGS=0V,VDS=0to500V Turn-on delay time td(on) - 12 - ns VDD=400V,VGS=13V,ID=2.2A, RG=15Ω Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=2.2A, RG=15Ω Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=13V,ID=2.2A, RG=15Ω Fall time tf - 20 - ns VDD=400V,VGS=13V,ID=2.2A, RG=15Ω Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 2 - nC VDD=640V,ID=2.2A,VGS=0to10V Gate to drain charge Qgd - 6 - nC VDD=640V,ID=2.2A,VGS=0to10V Gate charge total Qg - 15 - nC VDD=640V,ID=2.2A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=640V,ID=2.2A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V 2) Final Data Sheet 4 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPN80R900P7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=2.2A,Tf=25°C 610 - ns VR=400V,IF=1.1A,diF/dt=50A/µs - 5 - µC VR=400V,IF=1.1A,diF/dt=50A/µs - 11 - A VR=400V,IF=1.1A,diF/dt=50A/µs Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPN80R900P7 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 8 10 µs 100 µs 10 1 1 µs 1 ms 10 ms 6 100 ID[A] Ptot[W] DC 4 10-1 10-2 2 10-3 0 0 25 50 75 100 125 10-4 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 102 10 100 µs 101 10 µs 1 µs 1 ms 10 ms 100 101 0.5 ZthJC[K/W] ID[A] DC -1 10 -2 10 0.2 0.1 0.05 10 0 0.02 0.01 single pulse 10-3 10-4 100 101 102 103 10-1 10-5 10-4 10-3 VDS[V] 10-1 100 101 102 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-2 ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPN80R900P7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 18 12 20 V 10 V 8V 16 20 V 7V 10 V 10 8V 7V 6V 14 6V 12 8 ID[A] ID[A] 5.5 V 10 5.5 V 8 6 5V 6 4 5V 4.5 V 4 2 4.5 V 2 0 0 5 10 15 0 20 0 5 10 VDS[V] 15 ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 4.5 2.4 6V 5V 20 VDS[V] 5.5 V 2.2 6.5 V 4.0 2.0 7V 10 V 1.8 3.5 3.0 RDS(on)[Ω] RDS(on)[Ω] 1.6 2.5 1.4 1.2 98% 1.0 2.0 0.8 typ 0.6 1.5 0.4 1.0 0 5 10 15 0.2 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=2.2A;VGS=10V 7 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPN80R900P7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 16 10 25 °C 9 14 8 12 7 8 150 °C 640 V 120 V 6 VGS[V] ID[A] 10 5 4 6 3 4 2 2 0 1 0 2 4 6 8 10 0 12 0 5 VGS[V] 10 15 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=2.2Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 14 25 °C 125 °C 12 10 IF[A] EAS[mJ] 101 8 6 100 4 2 10-1 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=0.9A;VDD=50V 8 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPN80R900P7 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 950 104 900 103 Ciss 102 C[pF] VBR(DSS)[V] 850 800 101 750 100 Coss Crss 700 -75 -50 -25 0 25 50 75 100 125 150 175 10-1 0 100 200 Tj[°C] 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 3.0 2.5 Eoss[µJ] 2.0 1.5 1.0 0.5 0.0 0 100 200 300 400 500 600 700 800 VDS[V] Eoss=f(VDS) Final Data Sheet 9 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPN80R900P7 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPN80R900P7 6PackageOutlines DOCUMENT NO. Z8B00180553 0 SCALE DIM A A1 A2 b b2 c D E E1 e e1 L N O MILLIMETERS MIN 1.52 1,50 MAX 1.80 0.10 1.70 0.80 3.10 0.32 6.70 7.30 3.70 0.60 2.95 0.24 6.30 6.70 3.30 2.5 0 5mm EUROPEAN PROJECTION 2.3 BASIC 4.6 BASIC 0.75 2.5 ISSUE DATE 24-02-2016 1.10 3 REVISION 01 Figure1OutlinePG-SOT223,dimensionsinmm-IndustrialGrade Final Data Sheet 11 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPN80R900P7 7AppendixA Table11RelatedLinks • IFXCoolMOSWebpage:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 12 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPN80R900P7 RevisionHistory IPN80R900P7 Revision:2018-02-09,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-06-23 Release of final version 2.1 2018-02-09 Corrected front page text TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.1,2018-02-09