DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -50V IC = -3A High Continuous Collector Current ICM up to -5A Peak Pulse Current 2W Power Dissipation Low Saturation Voltage VCE(sat) < -180mV @ 1A RCE(sat) = 67mΩ @ 2A for a Low Equivalent On-Resistance Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.052 grams (Approximate) C SOT89 E B C C B E Top View Device Symbol Top View Pin-Out Ordering Information (Note 4) Part Number DPLS350Y-13 DPLS350Y-13R Notes: Marking P35 P35 Reel size (inches) 13 13 Tape width (mm) 12 12 Quantity per reel 2,500 4,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information (Top View) YWW P35 DPLS350Y Document number: DS31149 Rev. 7 - 2 P35 = Product Type Marking Code: YWW = Date Code Marking Y = Last digit of year ex: 1 = 2011 WW = Week code 01 - 52 1 of 7 www.diodes.com April 2014 © Diodes Incorporated DPLS350Y Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Collector-Base Voltage Characteristic VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Continuous Collector Current Peak Pulse Current Base Current IC -3 A ICM -5 A IB -500 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Power Dissipation (Note 5) (Note 6) (Note 7) PD Thermal Resistance, Junction to Ambient Air (Note 5) (Note 6) (Note 7) RθJA Thermal Resistance, Junction to Lead (Note 8) Operating and Storage Temperature Range Value 1 1.6 2.0 Unit W 125 78 62.5 °C/W RθJL 5.7 °C/W TJ, TSTG -55 to +150 °C ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol Value Unit JEDEC Class ESD HBM ESD MM 4,000 400 V V 3A C 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except the device is mounted on 25mm x 25mm 1oz copper. 7. Same as note (5), except the device is mounted on 50mm x 50mm 1oz copper. 8. Thermal resistance from junction to solder-point (on the exposed collector pad). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. DPLS350Y Document number: DS31149 Rev. 7 - 2 2 of 7 www.diodes.com April 2014 © Diodes Incorporated DPLS350Y 1.0 Thermal Resistance (°C/W) Max Power Dissipation (W) Thermal Characteristics and Derating Information 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 Temperature (°C) 120 100 80 D=0.5 60 40 Single Pulse D=0.2 D=0.05 20 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Derating Curve Max Power Dissipation (W) 100 Single Pulse. T amb=25°C 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) 140.0 3 T amb=25°C 120.0 100.0 80.0 1oz copper 60.0 40.0 Maximum Power (W) Thermal Resistance (°C/W) Pulse Power Dissipation 2oz copper 0 500 1000 1500 2000 Copper Area (sqmm) DPLS350Y Document number: DS31149 Rev. 7 - 2 2500 3 of 7 www.diodes.com 2oz copper 2 1oz copper 1 0 T amb=25°C 0 500 1000 1500 2000 Copper Area (sqmm) 2500 April 2014 © Diodes Incorporated DPLS350Y Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic BVCBO -50 — — V Collector-Emitter Breakdown Voltage (Note 10) BVCEO -50 — — V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -6 — — V IE = -100µA Collector-Emitter Cut-off Current ICES — — Collector Cut-off Current Emitter Cut-off Current ICBO — — IEBO — — 200 Collector-Emitter Saturation Voltage (Note 10) hFE VCE(sat) 200 -100 nA VCE = -50V -100 nA VCB = -50V -50 µA VCB = -50V, TA = +150°C -100 nA — 200 Static Forward Current Transfer Ratio (Note 10) 450 IC = -500mA, VCE = -2V — — IC = -2A, VCE = -2V 80 — IC = -3A, VCE = -2V -90 IC = -500mA, IB = -50mA -180 IC = -1A, IB = -50mA — — -320 mV — 67 135 -1.1 IC = -3A, IB = -300mA mΩ Base-Emitter Saturation Voltage (Note 10) VBE(sat) — — Base-Emitter Turn-On Current (Note 10) VBE(on) — — -1.1 V fT 100 — — MHz Cobo — — 35 pF Turn-On Time ton — 87 — ns Delay Time td — 41 — ns Rise Time tr — 46 — ns Turn-Off Time toff — 294 — ns Storage Time ts — 250 — ns Fall Time tf — 44 — ns Transition Frequency Collector Output Capacitance Note: -1.2 IC = -2A, IB = -100mA IC = -2A, IB = -200mA -390 RCE(sat) IC = -1A, VCE = -2V 130 -270 Equivalent On-Resistance VEB = -5V IC = -100mA, VCE = -2V — — Test Condition IC = -100µA V IC = -2A, IB = -200mA IC = -2A, IB = -100mA IC = -3A, IB = -300mA IC = -1A, VCE = -2V IC = -100mA, VCE = -5V, f = 100MHz VCB = -10V, IE = 0, f = 1MHz VCC = -30v, ICC = 150mA IB1 = - IB2 =15mA 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. DPLS350Y Document number: DS31149 Rev. 7 - 2 4 of 7 www.diodes.com April 2014 © Diodes Incorporated DPLS350Y Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) -IC, COLLECTOR CURRENT (A) IB = -10mA VCE = -2V TA = 150°C hFE, DC CURRENT GAIN IB = -8mA IB = -6mA IB = -4mA IB = -2mA 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 1 Typical Collector Current vs.Collector-Emitter Voltage TA = 85°C TA = 25°C TA = -55°C 0 IC/IB = 10 0.2 0.1 T A = 150°C TA = 85°C T A = 25°C TA = -55°C 0 0.0001 IC/IB = 10 TA = -55°C TA = 25°C T A = 85°C T A = 150°C -IC, COLLECTOR CURRENT (A) Figure 5 Typical Base-Emitter Saturation Voltage vs. Collector Current DPLS350Y Document number: DS31149 Rev. 7 - 2 VCE = -2V TA = -55°C TA = 25°C TA = 85°C TA = 150°C -IC, COLLECTOR CURRENT (A) Figure 4 Typical Base-Emitter Turn-On Voltage vs. Collector Current Cobo, OUTPUT CAPACITANCE (pF) -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Figure 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.3 -IC, COLLECTOR CURRENT (A) Figure 2 Typical DC Current Gain vs. Collector Current f = 1MHz VR, REVERSE VOLTAGE (V) Figure 6 Typical Output Capacitance Characteristics 5 of 7 www.diodes.com April 2014 © Diodes Incorporated DPLS350Y fT, GAIN-BANDWIDTH PRODUCT (MHz) 240 210 180 150 120 90 60 VCE = -5V f = 100MHz 30 0 -IC, COLLECTOR CURRENT (mA) Figure 7 Typical Gain-Bandwidth Product vs. Collector Current Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D1 0 .20 R0 C SOT89 Dim Min Max A 1.40 1.60 B 0.44 0.62 B1 0.35 0.54 C 0.35 0.44 D 4.40 4.60 D1 1.62 1.83 E 2.29 2.60 e 1.50 Typ H 3.94 4.25 H1 2.63 2.93 L 0.89 1.20 All Dimensions in mm 1 H H E B1 L B e 8° (4X) A D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 X2 (2x) Y1 Y3 Y4 Y2 Y C Dimensions Value (in mm) X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500 X (3x) DPLS350Y Document number: DS31149 Rev. 7 - 2 6 of 7 www.diodes.com April 2014 © Diodes Incorporated DPLS350Y IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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