RF NBB-302 Cascadable broadband gaas mmic amplifier dc to 12ghz Datasheet

NBB-302
0
RoHS Compliant & Pb-Free Product
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 12GHz
Typical Applications
• Narrow and Broadband Commercial and
Military Radio Designs
• Gain Stage or Driver Amplifiers for
MWRadio/Optical Designs (PTP/PMP/
• Linear and Saturated Amplifiers
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
Product Description
The NBB-302 cascadable broadband InGaP/GaAs MMIC
amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This
50Ω gain block is based on a reliable HBT proprietary
MMIC design, providing unsurpassed performance for
small-signal applications. Designed with an external bias
resistor, the NBB-302 provides flexibility and stability. The
NBB-302 is packaged in a low-cost, surface-mount
ceramic package, providing ease of assembly for highvolume tape-and-reel requirements. It is available in
either packaged or chip (NBB-300-D) form, where its gold
metallization is ideal for hybrid circuit designs.
Optimum Technology Matching® Applied
9
Si BJT
GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
2.94 min
3.28 max
Pin 1
Indicator
1.00 min
1.50 max
N3
Lid ID
1.70 min
1.91 max
2.39 min
2.59 max
0.025 min
0.125 max
0.50 nom
0.50 nom
Pin 1
Indicator
RF OUT
Ground
Ground
RF IN
0.98 min
1.02 max
0.38 nom
All Dimensions in Millimeters
0.37 min
0.63 max
Notes:
1. Solder pads are coplanar to within ±0.025 mm.
2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm.
3. Mark to include two characters and dot to reference pin 1.
Package Style: MPGA, Bowtie, 3x3, Ceramic
Features
• Reliable, Low-Cost HBT Design
• 12.0dB Gain, +13.7dBm P1dB@2GHz
• High P1dB of [email protected] and
[email protected]
• Single Power Supply Operation
Pin 1
Indicator
1
2
3
RF OUT
• 50Ω I/O Matched for High Freq. Use
Ground
8
9
4
7
6
5
Ground
RF IN
Ordering Information
NBB-302
Functional Block Diagram
Rev A6 060124
Cascadable Broadband GaAs MMIC Amplifier DC to
12GHz
NBB-302-T1
Tape & Reel, 1000 Pieces
NBB-302-E
Fully Assembled Evaluation Board
NBB-X-K1
Extended Frequency InGaP Amp Designer’s Tool Kit
RF Micro Devices, Inc.
Tel (336) 664 1233
7628 Thorndike Road
Fax (336) 664 0454
Greensboro, NC 27409, USA
http://www.rfmd.com
4-9
NBB-302
Absolute Maximum Ratings
Parameter
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
Rating
Unit
+20
300
70
200
-45 to +85
-65 to +150
dBm
mW
mA
°C
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Exceeding any one or a combination of these limits may cause permanent damage.
Parameter
Specification
Min.
Typ.
Max.
Unit
Overall
Small Signal Power Gain, S21
12.0
11.0
9.0
Gain Flatness, GF
Input and Output VSWR
Bandwidth, BW
Output Power @
-1dB Compression, P1dB
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, VD
Gain Temperature Coefficient,
δGT/δT
3.6
13.5
13.0
12.5
10.5
9.5 (avg.)
±0.6
2.4:1
2.0:1
2.8:1
12.5
dB
dB
dB
dB
dB
dB
GHz
13.7
14.8
11.0
5.5
+23.5
-15
3.9
-0.0015
dBm
dBm
dBm
dB
dBm
dB
V
dB/°C
4.2
Condition
VD =+3.9V, ICC =50mA, Z0 =50Ω, TA =+25°C
f=0.1GHz to 1.0GHz
f=1.0GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 12.0GHz
f=12.0GHz to 14.0GHz
f=0.1GHz to 8.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 12.0GHz
f=12.0GHz to 15.0GHz
BW3 (3dB)
f=2.0GHz
f=6.0GHz
f=14.0GHz
f=3.0GHz
f=2.0GHz
f=0.1GHz to 12.0GHz
MTTF versus Temperature
@ ICC =50mA
Case Temperature
Junction Temperature
MTTF
85
122.9
>1,000,000
°C
°C
hours
194
°C/W
Thermal Resistance
θJC
4-10
J T – T CASE
-------------------------- = θ JC ( °C ⁄ Watt )
V D ⋅ I CC
Rev A6 060124
NBB-302
Pin
1
Function
GND
2
3
4
GND
GND
RF IN
5
6
7
8
GND
GND
GND
RF OUT
Description
Interface Schematic
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
Same as pin 1.
Same as pin 1.
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instability.
Same as pin 1.
Same as pin 1.
Same as pin 1.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is determined by the following equation:
( V CC – V DEVICE )
R = -----------------------------------------I CC
9
GND
Rev A6 060124
RF OUT
RF IN
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds maximum datasheet operating current over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply
near 5.0V is available, to provide DC feedback to prevent thermal runaway. Alternatively, a constant current supply circuit may be implemented. Because DC is present on this pin, a DC blocking capacitor,
suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well
bypassed.
Same as pin 1.
4-11
NBB-302
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
VCC
RCC
1,2,3
L choke
(optional)
4
In
8
Out
C block
C block
5,6,7,9
VDEVICE
VD = 3.9 V
Recommended Bias Resistor Values
Supply Voltage, VCC (V)
Bias Resistor, RCC (Ω)
5
22
8
81
10
122
12
162
15
222
20
322
Application Notes
Die Attach
The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the
ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip.
Wire Bonding
Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable
practices for wire bonding.
Assembly Procedure
Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive
silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside
gold of the chip and the metallized area of the substrate. A 150°C cure for 1 hour is necessary. Recommended epoxy is
Ablebond 84-1LMI from Ablestik.
Bonding Temperature (Wedge or Ball)
It is recommended that the heater block temperature be set to 160°C±10°C.
4-12
Rev A6 060124
NBB-302
Extended Frequency InGaP Amplifier Designer’s Tool Kit
NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers.
Each tool kit contains the following.
•
•
•
•
5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers
5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers
2 Broadband Evaluation Boards and High Frequency SMA Connectors
Broadband Bias Instructions and Specification Summary Index for ease of operation
Rev A6 060124
4-13
NBB-302
Tape and Reel Dimensions
All Dimensions in Millimeters
T
A
O
B
S
D
F
330 mm (13") REEL
ITEMS
Diameter
Micro-X, MPGA
SYMBOL SIZE (mm)
B
330 +0.25/-4.0
FLANGE Thickness
Space Between Flange
HUB
T
F
Outer Diameter
Spindle Hole Diameter
O
S
Key Slit Width
Key Slit Diameter
A
D
SIZE (inches)
13.0 +0.079/-0.158
18.4 MAX
12.4 +2.0
0.724 MAX
0.488 +0.08
102.0 REF
4.0 REF
13.0 +0.5/-0.2 0.512 +0.020/-0.008
1.5 MIN
20.2 MIN
0.059 MIN
0.795 MIN
PIN 1
User Direction of Feed
4.0
All dimensions in mm
See Note 1
2.00 ± 0.05
+0.1
1.5 -0.0
See Note 6
0.30 ± 0.05
A
1.5 MIN.
1.75
R0.3 MAX.
5.50 ± 0.05
See Note 6 12.00
± 0.30
Bo
Ko
Ao
8.0
A
R0.5 TYP
SECTION A-A
NOTES:
1. 10 sprocket hole pitch cumulative tolerance ±0.2.
2. Camber not to exceed 1 mm in 100 mm.
3. Material: PS+C
4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket.
5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier.
6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole.
4-14
Ao = 3.6 MM
Bo = 3.6 MM
Ko = 1.7 MM
Rev A6 060124
NBB-302
Device Voltage versus Amplifier Current
P1dB versus Frequency at +25°C
16.0
4.00
14.0
3.95
P1dB (dBm)
Device Voltage, V D (V)
12.0
3.90
3.85
10.0
8.0
6.0
3.80
4.0
3.75
2.0
3.70
35.00
0.0
40.00
45.00
50.00
55.00
2.0
60.00
4.0
6.0
8.0
POUT/Gain versus PIN at 6 GHz
12.0
14.0
16.0
POUT/Gain versus PIN at 14 GHz
18.0
14.0
16.0
12.0
14.0
10.0
POUT (dBm), Gain (dB)
POUT (dBm), Gain (dB)
10.0
Frequency (GHz)
Amplifier Current, ICC (mA)
12.0
10.0
8.0
6.0
4.0
8.0
6.0
4.0
2.0
0.0
Pout (dBm)
2.0
Pout (dBm)
-2.0
Gain (dB)
Gain (dB)
0.0
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
PIN (dBm)
-4.0
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
PIN (dBm)
Third Order Intercept versus Frequency at +25°C
30.0
28.0
26.0
24.0
Output IP3 (dBm)
22.0
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
Frequency (GHz)
Rev A6 060124
4-15
NBB-302
Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector
loss variations. The insertion losses of the evaluation board and connectors are as follows:
1GHz to 4GHz=-0.06dB
5GHz to 9GHz=-0.22dB
10GHz to 14GHz=-0.50dB
15GHz to 20GHz=-1.08dB
S12 versus Frequency at +25°C
0.0
0.0
-5.0
-5.0
S12 (dB)
S11 (dB)
S11 versus Frequency at +25°C
-10.0
-15.0
-10.0
-15.0
-20.0
-20.0
0.0
5.0
10.0
15.0
20.0
0.0
5.0
Frequency (GHz)
15.0
20.0
S22 versus Frequency at +25°C
20.0
0.0
15.0
-5.0
S22 (dB)
S21 (dB)
S21 versus Frequency at +25°C
10.0
5.0
-10.0
-15.0
0.0
-20.0
0.0
5.0
10.0
Frequency (GHz)
4-16
10.0
Frequency (GHz)
15.0
20.0
0.0
5.0
10.0
15.0
20.0
Frequency (GHz)
Rev A6 060124
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