NTGS3441B Power MOSFET -20 V, -3.5 A, Single P-Channel, TSOP-6 Features •Low RDS(on) in TSOP-6 Package •2.5 V Gate Rating •This is a Pb-Free Device http://onsemi.com Applications •Battery Switch and Load Management Applications in Portable Equipment •High Side Load Switch •Portable Devices like Games and Cell Phones V(BR)DSS RDS(on) MAX ID MAX 90 mW @ -4.5 V -3.0 A 130 mW @ -2.5 V -2.4 A -20 V P-Channel MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS -20 V Gate-to-Source Voltage VGS $8 V ID -3.0 A Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C tv5s TA = 25°C Steady State TA = 25°C PD 1.1 TA = 25°C ID -2.2 TA = 70°C Steady State Power Dissipation (Note 2) Pulsed Drain Current 3 -2.4 -3.5 tv5s Continuous Drain Current (Note 2) 1 2 5 6 4 W MARKING DIAGRAM 1.6 TA = 70°C TA = 25°C tp = 10 ms Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) A TSOP-6 CASE 318G STYLE 1 -1.8 PD 0.7 W IDM -12 A TJ, TSTG -55 to 150 °C TL 260 °C 1 SF MG G 1 SF = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT Drain Drain Source 6 5 4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size. (Cu area = 0.0775 in sq). 1 2 3 Drain Drain Gate ORDERING INFORMATION Device Package Shipping† NTGS3441BT1G TSOP-6 (Pb-Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 November, 2007 - Rev. 0 1 Publication Order Number: NTGS3441B/D NTGS3441B THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction-to-Ambient – Steady State (Note 3) Parameter RqJA 110 Junction-to-Ambient – t v 5 s (Note 3) RqJA 80 Junction-to-Ambient – Minimum Pad (Note 4) RqJA 190 Unit °C/W 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = -250 mA -20 Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = -20 V -1.0 TJ = 70°C -5.0 IGSS VDS = 0 V, VGS = ±8 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250 mA Drain-to-Source On Resistance RDS(on) Gate-to-Source Leakage Current V TJ = 25°C mA $0.1 mA -0.9 V mW ON CHARACTERISTICS (Note 5) Forward Transconductance VGS = -4.5 V, ID = -3.0 A gFS -0.4 59 90 VGS = -2.5 V, ID = -2.4 A 79 130 VDS = -10 V, ID = -3.0 A 5.8 S 630 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance VGS = 0 V, f = 1 MHz, VDS = -10 V 93 CRSS 49 Total Gate Charge QG(TOT) 6.1 Threshold Gate Charge QG(TH) 0.5 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD VGS = -4.5 V, VDS = -10 V; ID = -3.0 A 9.0 nC ns 1.0 1.4 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) 8.0 13 tr 6.0 10 40 64 33 53 -0.8 -1.2 V 12 24 ns VGS = -4.5 V, VDS = -10 V, ID = -1.0 A, RG = 6.0 W td(OFF) tf DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR VGS = 0 V, IS = -1.6 A TJ = 25°C VGS = 0 V, dISD/dt = 100 A/ms, IS = -1.6 A 5. Pulse Test: pulse width v 300 ms, duty cycle v 2% 6. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTGS3441B TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = -4.5 V 20 -3.5 V TJ = 25°C -4 V 16 VDS = -5 V -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) 20 -3 V 12 -2.5 V 8 -2 V 4 -1.5 V 1 3 4 5 TJ = 125°C 1 2 1.5 3 2.5 Figure 2. Transfer Characteristics 0.24 0.18 0.12 0.06 0.00 1.5 2.5 2 3 3.5 4 4.5 5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0.30 TJ = 25°C 0.24 0.18 0.12 VGS = -2.5 V 0.06 VGS = -4.5 V 0.00 4 0 8 12 16 20 -ID, DRAIN CURRENT (AMPS) Figure 4. On-Resistance vs. Drain Current and Gate Voltage Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.5 1000 ID = -3 A VGS = -4.5 V C, CAPACITANCE (pF) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TJ = -55°C Figure 1. On-Region Characteristics ID = -3 A TJ = 25°C 1.4 TJ = 25°C 4 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0.30 1 8 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 2 12 0 0.5 0 0 16 1.3 1.2 1.1 1.0 0.9 VGS = 0 V TJ = 25°C f = 1 MHz 800 Ciss 600 400 Coss 200 0.8 0.7 -50 Crss 0 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 20 NTGS3441B 12 QT 6 10 -VGS -VDS 5 8 4 6 3 QGS 2 4 QGD VDS = -10 V ID = -3 A TJ = 25°C 1 2 0 0 0 2 6 4 20 -I S, SOURCE CURRENT (AMPS) 7 -V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) -V GS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = 0 V 10 1.0 0.0 8 0.2 Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 0.8 0.6 1.0 1.4 1.2 Figure 8. Diode Forward Voltage vs. Current 60 ID = -250 mA 0.8 0.4 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) QG, TOTAL GATE CHARGE (nC) 0.9 TJ = 25°C TJ = 150°C 50 POWER (WATTS) 0.7 0.5 0.4 0.3 40 30 20 0.2 10 0.1 0.0 -50 -25 0 25 75 50 100 125 0 0.001 150 0.1 0.01 1 10 100 SINGLE PULSE TIME (s) TJ, JUNCTION TEMPERATURE (°C) Figure 10. Single Pulse Maximum Power Dissipation Figure 9. Threshold Voltage 100 -ID, DRAIN CURRENT (A) -VGS(th) (V) 0.6 10 100 ms 1 ms 1 10 ms VGS = -8.0 V SINGLE PULSE 0.1 TC = 25°C RDS(on) LIMIT dc Thermal Limit Package Limit 0.01 0.1 1 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 1000 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE NORMALIZED (°C/W) NTGS3441B 1 Duty Cycle = 0.5 0.2 0.1 P(pk) 0.1 0.05 0.02 0.01 0.01 0.0001 Test Type = 1 sq in 2 oz RqJA = 1 sq in 2 oz t1 t2 DUTY CYCLE, D = t1/t2 Single Pulse 0.001 0.01 0.1 PULSE TIME (s) 1 Figure 12. FET Thermal Response http://onsemi.com 5 10 100 1000 NTGS3441B PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 5 4 2 3 E HE 1 b e q c A 0.05 (0.002) L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° - MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 DIM A A1 b c D E e L HE q 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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