DMT10H015LK3 Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V Features RDS(ON) Max ID TC = +25°C 15mΩ @ VGS = 10V 52.7A 18mΩ @ VGS = 6V 48A 25mΩ @ VGS = 4.5V 40A 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application Low RDS(ON) – Minimizes Power Losses Low QG – Minimizes Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Applications Power Management Functions DC-DC Converters Backlighting Top View Case: TO252 (DPAK) Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) Pin Out Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMT10H015LK3-13 Notes: Case TO252 (DPAK) Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information T115LK YYWW DMT10H015LK3 Document number: DS38736 Rev. 4 - 2 = Manufacturer’s Marking T115LK = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 18 = 2018) WW = Week Code (01 to 53) 1 of 7 www.diodes.com January 2018 © Diodes Incorporated DMT10H015LK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value 100 Unit V VGSS ±20 V ID 52.7 42.1 A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) IDM 150 A IS 48 A Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) Avalanche Current, L = 3mH Avalanche Energy, L = 3mH ISM 150 A IAS 7.5 85 A mJ Drain-Source Voltage VDSS Gate-Source Voltage TC = +25°C TC = +70°C Continuous Drain Current, VGS = 10V EAS Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Total Power Dissipation (Note 5) PD Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Steady State RθJA Thermal Resistance, Junction to Ambient (Note 6) Steady State PD RθJA Thermal Resistance, Junction to Case Operating and Storage Temperature Range Value 1.8 Unit W 69 2.9 °C/W W 42 °C/W RθJC 2 TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 1mA VDS = 80V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) VSD — 10.7 13.1 18.2 — 3.5 15 18 25 1.3 V Static Drain-Source On-Resistance 1.4 — — — — VDS = VGS, ID = 250µA VGS = 10V, ID = 20A VGS = 6V, ID = 20A VGS = 4.5V, ID = 5A VGS = 0V, IS = 20A CISS COSS CRSS RG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — 1871 261 6.9 0.75 33.3 6.9 5.1 6.5 7.0 19.7 8.1 37.9 51.9 — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 50V, VGS = 0V f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 50V, ID = 10A, VGS = 10V ns VDD = 50V, VGS = 10V, ID = 10A, RG = 6Ω ns nC IF = 10A, di/dt = 100A/µs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMT10H015LK3 Document number: DS38736 Rev. 4 - 2 2 of 7 www.diodes.com January 2018 © Diodes Incorporated DMT10H015LK3 30 30.0 25 VGS = 4.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 10V VGS = 4.5V 25.0 VGS=5.0V 20.0 VGS = 6.0V VGS = 10.0V 15.0 10.0 VGS = 3.5V 5.0 20 15 125℃ 10 85℃ 5 25℃ 150℃ VGS = 3.0V -55℃ 0.0 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) 3 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) 30 VGS = 4.5V 20 VGS = 6.0V 15 10 VGS = 10V 5 0 0.08 0.06 0.04 0.02 0 VGS = 10V 0.025 150℃ 0.02 125℃ 0.015 85℃ 25℃ -55℃ 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMT10H015LK3 Document number: DS38736 Rev. 4 - 2 4 8 12 16 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 0.03 ID = 20A 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.005 5 0.1 0 0.01 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic Figure 1. Typical Output Characteristic 25 1.5 3 of 7 www.diodes.com 2.4 2.2 VGS = 10V, ID = 20A 2 1.8 1.6 1.4 1.2 VGS = 6V, ID = 20A 1 0.8 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 150 Figure 6. On-Resistance Variation with Junction Temperature January 2018 © Diodes Incorporated 0.03 0.025 VGS = 6V, ID = 20A 0.02 0.015 0.01 VGS = 10V, ID = 20A 0.005 0 -50 3.5 3 ID = 1mA 2.5 2 ID = 250μA 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 30 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 10000 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 Is, SOURCE CURRENT (A) 4 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) DMT10H015LK3 20 15 TJ = 85oC 10 TJ = 125oC TJ = 25oC TJ = 150oC 5 TJ = -55oC Ciss 1000 Coss 100 Crss 10 1 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.5 10 20 30 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 1000 10 RDS(ON) LIMITED 6 4 VDS = 50V, ID = 10A 2 PW =1µs 100 ID, DRAIN CURRENT (A) 8 VGS (V) 50 10 1 0.1 Plz help to replace Fig 12 by PW =10µs PW =100µs attachment. Thx. TJ(MAX)=150℃ TC=25℃ Single Pulse DUT on infinite heatsink VGS=10V PW =1ms PW =10ms PW =100ms PW =1s 0.01 0 0 5 10 15 20 Qg (nC) 25 30 35 Document number: DS38736 Rev. 4 - 2 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 1000 Figure 12. SOA, Safe Operation Area Figure 11. Gate Charge DMT10H015LK3 0.1 4 of 7 www.diodes.com January 2018 © Diodes Incorporated DMT10H015LK3 r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC(t) = r(t) * RθJC RθJC = 2℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 t1, PULSE DURATION TIME (sec) 0.1 1 10 Figure 13. Transient Thermal Resistance DMT10H015LK3 Document number: DS38736 Rev. 4 - 2 5 of 7 www.diodes.com January 2018 © Diodes Incorporated DMT10H015LK3 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) E A b3 7° ± 1° c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L A1 TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm 2.74REF Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) X1 Dimensions C X X1 Y Y1 Y2 Y1 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X DMT10H015LK3 Document number: DS38736 Rev. 4 - 2 6 of 7 www.diodes.com January 2018 © Diodes Incorporated DMT10H015LK3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated www.diodes.com DMT10H015LK3 Document number: DS38736 Rev. 4 - 2 7 of 7 www.diodes.com January 2018 © Diodes Incorporated