ON MC74HC244AF Octal 3−state noninverting buffer/line driver/ line receiver high−performance silicon−gate cmo Datasheet

MC74HC244A
Octal 3−State Noninverting
Buffer/Line Driver/
Line Receiver
High−Performance Silicon−Gate CMOS
The MC74HC244A is identical in pinout to the LS244. The device
inputs are compatible with standard CMOS outputs; with pullup
resistors, they are compatible with LSTTL outputs.
This octal noninverting buffer/line driver/line receiver is designed
to be used with 3−state memory address drivers, clock drivers, and
other bus−oriented systems. The device has noninverting outputs and
two active−low output enables.
The HC244A is similar in function to the HC240A.
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MARKING
DIAGRAMS
20
20
PDIP−20
N SUFFIX
CASE 738
MC74HC244AN
AWLYYWWG
1
1
Features
•
•
•
•
•
•
•
•
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1 mA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 136 FETs or 34 Equivalent Gates
Pb−Free Packages are Available*
20
20
1
SOIC−20
DW SUFFIX
CASE 751D
HC244A
AWLYYWWG
1
20
20
1
HC
244A
ALYWG
G
TSSOP−20
DT SUFFIX
CASE 948E
1
20
1
20
SOEIAJ−20
F SUFFIX
CASE 967
1
74HC244A
AWLYWWG
A
= Assembly Location
WL, L
= Wafer Lot
YY, Y
= Year
WW, W = Work Week
G
= Pb−Free Package
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 11
1
Publication Order Number:
MC74HC244A/D
MC74HC244A
PIN ASSIGNMENT
ENABLE A
1
20
VCC
A1
2
19
ENABLE B
YB4
3
18
YA1
A2
4
17
B4
YB3
5
16
YA2
A3
6
15
B3
YB2
7
14
YA3
A4
8
13
B2
YB1
9
12
YA4
GND
10
11
B1
LOGIC DIAGRAM
A1
A2
A3
A4
DATA
INPUTS
B1
B2
B3
FUNCTION TABLE
Inputs
Enable A,
Enable B
A, B
B4
2
18
4
16
6
14
8
12
11
9
13
7
15
5
17
3
YA1
YA2
YA3
YA4
YB1
NONINVERTING
OUTPUTS
YB2
YB3
YB4
Outputs
YA, YB
L
L
L
H
H
X
Z = high impedance
L
H
Z
OUTPUT
ENABLES
1
ENABLE A
19
ENABLE B
PIN 20 = VCC
PIN 10 = GND
ORDERING INFORMATION
Package
Shipping †
MC74HC244AN
PDIP−20
18 Units / Rail
MC74HC244ANG
PDIP−20
(Pb−Free)
18 Units / Rail
MC74HC244ADW
SOIC−20 WIDE
38 Units / Rail
MC74HC244ADWG
SOIC−20 WIDE
(Pb−Free)
38 Units / Rail
MC74HC244ADWR2
SOIC−20 WIDE
1000 Tape & Reel
MC74HC244ADWR2G
SOIC−20 WIDE
(Pb−Free)
1000 Tape & Reel
MC74HC244ADT
TSSOP−20*
75 Units / Rail
MC74HC244ADTG
TSSOP−20*
75 Units / Rail
MC74HC244ADTR2
TSSOP−20*
2500 Tape & Reel
MC74HC244ADTR2G
TSSOP−20*
2500 Tape & Reel
MC74HC244AF
SOEIAJ−20
40 Units / Rail
MC74HC244AFG
SOEIAJ−20
(Pb−Free)
40 Units / Rail
MC74HC244AFEL
SOEIAJ−20
2000 Tape & Reel
MC74HC244AFELG
SOEIAJ−20
(Pb−Free)
2000 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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2
MC74HC244A
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MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
– 0.5 to + 7.0
V
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
VCC
DC Supply Voltage (Referenced to GND)
Vin
Vout
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 35
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air, Plastic DIP†
SOIC Package†
TSSOP Package†
750
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC, SSOP or TSSOP
Package)
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
_C
260
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
Min
Max
Unit
2.0
6.0
V
0
VCC
V
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
– 55
+ 125
_C
tr, tf
Input Rise and Fall Time
VCC = 2.0 V
(Figure 1)
VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
VCC
V
– 55 to
25_C
Symbol
Parameter
v 85_C
v 125_C
Unit
VIH
Minimum High−Level Input Voltage
Vout = VCC – 0.1 V
|Iout| v 20 mA
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
VIL
Maximum Low−Level Input Voltage
Vout = 0.1 V
|Iout| v 20 mA
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
VOH
Minimum High−Level Output
Voltage
Vin = VIH
|Iout| v 20 mA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH |Iout| v 2.4 mA
|Iout| v 6.0 mA
|Iout| v 7.8 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.2
3.7
5.2
Vin = VIL
|Iout| v 20 mA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Vin = VIL |Iout| v 2.4 mA
|Iout| v 6.0 mA
|Iout| v 7.8 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
VOL
Iin
Maximum Low−Level Output
Voltage
Maximum Input Leakage Current
Test Conditions
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3
V
mA
MC74HC244A
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DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25_C
v 85_C
v 125_C
Unit
IOZ
Maximum Three−State Leakage
Current
Output in High−Impedance State
Vin = VIL or VIH
Vout = VCC or GND
6.0
± 0.5
± 5.0
± 10
mA
ICC
Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND
Iout = 0 mA
6.0
4.0
40
160
mA
NOTE: Information on typical parametric values and high frequency or heavy load considerations can be found in Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
VCC
V
– 55 to
25_C
v85_C
v125_C
Unit
tPLH,
tPHL
Maximum Propagation Delay, A to YA or B to YB
(Figures 1 and 3)
2.0
3.0
4.5
6.0
96
50
18
15
115
60
23
20
135
70
27
23
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to YA or YB
(Figures 2 and 4)
2.0
3.0
4.5
6.0
110
60
22
19
140
70
28
24
165
80
33
28
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to YA or YB
(Figures 2 and 4)
2.0
3.0
4.5
6.0
110
60
22
19
140
70
28
24
165
80
33
28
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
2.0
3.0
4.5
6.0
60
23
12
10
75
27
15
13
90
32
18
15
ns
Cin
Maximum Input Capacitance
−
10
10
10
pF
Cout
Maximum Three−State Output Capacitance
(Output in High−Impedance State)
−
15
15
15
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
34
Power Dissipation Capacitance (Per Buffer)*
pF
* Used to determine the no−load dynamic power consumption: PD = CPD VCC2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
SWITCHING WAVEFORMS
DATA INPUT
A OR B
OUTPUT
YA OR YB
tr
tf
VCC
90%
50%
10%
tPLH
90%
50%
10%
tTLH
tPHL
ENABLE
A OR B
GND
OUTPUT Y
VCC
50%
tPZL
50%
tPZH
tTHL
OUTPUT Y
Figure 1.
tPHZ
50%
4
HIGH
IMPEDANCE
10%
VOL
90%
VOH
HIGH
IMPEDANCE
Figure 2.
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GND
tPLZ
MC74HC244A
TEST CIRCUITS
TEST POINT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
OUTPUT
DEVICE
UNDER
TEST
C L*
*Includes all probe and jig capacitance
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
1 kW
C L*
*Includes all probe and jig capacitance
Figure 3. Test Circuit
Figure 4. Test Circuit
PIN DESCRIPTIONS
INPUTS
function as noninverting buffers. When a high level is
applied, the outputs assume the high impedance state.
A1, A2, A3, A4, B1, B2, B3, B4
(Pins 2, 4, 6, 8, 11, 13, 15, 17)
OUTPUTS
Data input pins. Data on these pins appear in noninverted
form on the corresponding Y outputs, when the outputs are
enabled.
YA1, YA2, YA3, YA4, YB1, YB2, YB3, YB4
(Pins 18, 16, 14, 12, 9, 7, 5, 3)
Device outputs. Depending upon the state of the
output−enable pins, these outputs are either noninverting
outputs or high−impedance outputs.
CONTROLS
Enable A, Enable B (Pins 1, 19)
Output enables (active−low). When a low level is applied
to these pins, the outputs are enabled and the devices
LOGIC DETAIL
TO THREE OTHER
A OR B INVERTERS
ONE OF 8
INVERTERS
VCC
DATA
INPUT
A OR B
YA
OR
YB
ENABLE A OR
ENABLE B
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5
MC74HC244A
PACKAGE DIMENSIONS
PDIP−20
N SUFFIX
PLASTIC DIP PACKAGE
CASE 738−03
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
−A−
20
11
1
10
B
L
C
−T−
K
SEATING
PLANE
M
N
E
G
F
J
D
20 PL
0.25 (0.010)
20 PL
0.25 (0.010)
M
T A
M
T B
M
DIM
A
B
C
D
E
F
G
J
K
L
M
N
INCHES
MIN
MAX
1.010
1.070
0.240
0.260
0.150
0.180
0.015
0.022
0.050 BSC
0.050
0.070
0.100 BSC
0.008
0.015
0.110
0.140
0.300 BSC
0_
15 _
0.020
0.040
MILLIMETERS
MIN
MAX
25.66
27.17
6.10
6.60
3.81
4.57
0.39
0.55
1.27 BSC
1.27
1.77
2.54 BSC
0.21
0.38
2.80
3.55
7.62 BSC
0_
15_
0.51
1.01
M
SOIC−20
DW SUFFIX
CASE 751D−05
ISSUE G
20
11
X 45 _
h
1
10
20X
B
B
0.25
M
T A
S
B
S
A
L
H
M
E
0.25
10X
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF B
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
q
A
B
M
D
18X
e
A1
SEATING
PLANE
C
T
http://onsemi.com
6
DIM
A
A1
B
C
D
E
e
H
h
L
q
MILLIMETERS
MIN
MAX
2.35
2.65
0.10
0.25
0.35
0.49
0.23
0.32
12.65
12.95
7.40
7.60
1.27 BSC
10.05
10.55
0.25
0.75
0.50
0.90
0_
7_
MC74HC244A
PACKAGE DIMENSIONS
TSSOP−20
DT SUFFIX
CASE 948E−02
ISSUE B
20X
0.15 (0.006) T U
2X
K REF
0.10 (0.004)
S
L/2
20
M
T U
S
V
S
K
K1
ÍÍÍÍ
ÍÍÍÍ
ÍÍÍÍ
11
J J1
B
−U−
L
PIN 1
IDENT
SECTION N−N
1
10
0.25 (0.010)
N
0.15 (0.006) T U
S
M
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION:
MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE
MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH OR GATE BURRS
SHALL NOT EXCEED 0.15 (0.006) PER
SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER
SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN
FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
N
F
DETAIL E
−W−
C
D
G
H
DETAIL E
0.100 (0.004)
−T− SEATING
PLANE
http://onsemi.com
7
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
6.40
6.60
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.27
0.37
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.252
0.260
0.169
0.177
−−− 0.047
0.002
0.006
0.020
0.030
0.026 BSC
0.011
0.015
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0_
8_
MC74HC244A
PACKAGE DIMENSIONS
SOEIAJ−20
CASE 967−01
ISSUE A
20
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE
MOLD FLASH OR PROTRUSIONS AND ARE
MEASURED AT THE PARTING LINE. MOLD FLASH
OR PROTRUSIONS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
LE
11
Q1
E HE
1
M_
L
10
DETAIL P
Z
D
VIEW P
e
A
c
A1
b
0.13 (0.005)
M
0.10 (0.004)
DIM
A
A1
b
c
D
E
e
HE
L
LE
M
Q1
Z
MILLIMETERS
MIN
MAX
−−−
2.05
0.05
0.20
0.35
0.50
0.15
0.25
12.35
12.80
5.10
5.45
1.27 BSC
7.40
8.20
0.50
0.85
1.10
1.50
10 _
0_
0.70
0.90
−−−
0.81
INCHES
MIN
MAX
−−− 0.081
0.002
0.008
0.014
0.020
0.006
0.010
0.486
0.504
0.201
0.215
0.050 BSC
0.291
0.323
0.020
0.033
0.043
0.059
10 _
0_
0.028
0.035
−−− 0.032
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MC74HC244A/D
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