Spec. No. : C723N3 Issued Date : 2009.06.12 Revised Date : Page No. : 1/7 CYStech Electronics Corp. 30V N-Channel Logic Level Enhancement Mode MOSFET MTB55N03N3 BVDSS RDSON(Max) ID 30V 55mΩ 3.5A Features • VDS=30V RDS(ON)=55mΩ@VGS=10V, ID=3.5A RDS(ON)=85mΩ@VGS=4.5V, ID=2A • Lower gate charge • Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTB55N03N3 SOT-23 D S G：Gate S：Source D：Drain G Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VDS VGS TA=25°C TA=70°C Pulsed Drain Current TA=25°C TA=70°C Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Power Dissipation ID IDM PD Rth, j-a Tj, Tstg Limits 30 ±20 3.5 2.4 14 (Note 1 & 2) 1.5 (Note 3) 1 (Note 3) 100 (Note 3) -55 ~ +175 Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle ≤ 1% 3. Surface mounted on 1 in² copper pad of FR4 board; 270°C/W when mounted on min. copper pad MTB55N03N3 Unit V V A A W °C/W °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C723N3 Issued Date : 2009.06.12 Revised Date : Page No. : 2/7 Electrical Characteristics (TA=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS IDON 1 *RDS(ON) 1 *GFS 1 Dynamic Ciss Coss Crss *td(ON) 1 2 *tr 1 2 *td(OFF) 1 2 *tf 1 2 *Qg 1 2 *Qgs 1 2 *Qgd 1 2 Source-Drain Diode IS ISM 3 VSD 1 Min. Typ. Max. Unit 30 1 3.5 - 1.5 45 65 5 3 ±100 1 10 55 85 - V V nA μA μA A - 319 66 53 8 2.5 20 5 6 0.8 1.8 - - - 2 8 1.2 1 Pulse test : Pulse width≤300μs, Duty cycle≤2% 2 Independent of operating temperature 3 Pulse width limited by maximum junction temperature Test Conditions S VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=24V, VGS=0 VDS=20V, VGS=0, Tj=125°C VDS=5V, VGS=10V ID=3.5A, VGS=10V ID=2A, VGS=4.5V VDS=5V, ID=3.5A pF VDS=10V, VGS=0, f=1MHz ns VDS=10V, ID=1A,VGS=10V, RG=6Ω nC VDS=10V, ID=3.5A, VGS=4.5V mΩ A V IF=IS, VGS=0V Ordering Information Device MTB55N03N3 MTB55N03N3 Package SOT-23 (Pb-free) Shipping Marking 3000 pcs / Tape & Reel 10 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C723N3 Issued Date : 2009.06.12 Revised Date : Page No. : 3/7 Characteristic Curves MTB55N03N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C723N3 Issued Date : 2009.06.12 Revised Date : Page No. : 4/7 Characteristic Curves(Cont.) MTB55N03N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C723N3 Issued Date : 2009.06.12 Revised Date : Page No. : 5/7 Reel Dimension Carrier Tape Dimension MTB55N03N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C723N3 Issued Date : 2009.06.12 Revised Date : Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB55N03N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C723N3 Issued Date : 2009.06.12 Revised Date : Page No. : 7/7 SOT-23 Dimension Marking: A L Device Code 3 B S Date Code 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D K H Style: Pin 1.Gate 2.Source 3.Drain J *: Typical DIM Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB55N03N3 CYStek Product Specification